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High brightness semiconductor diode lasers can provide tremendous system-level advantages for many applications. Recent advancements in InP-based edge-emitting diode lasers operating in the 13xx – 17xx nm wavelength band could enable compact, direct diode solutions with performance metrics that previously have only been met by fiber lasers or solid-state laser systems. In this work, we report on tapered diode lasers that operate at 1550 nm with high efficiency and high brightness. These single emitter devices produce 5 W of continuous wave output power with 23% electrical-to-optical efficiency. The brightness is 187 MW cm-2 sr-1, and the slow axis linear brightness is 9.1 W mm-1 mrad-1. The percentage of power in the central lobe of the output beam is 87%, indicative of good beam quality. These results significantly impact applications such as communications and sensing.

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She's at it again! In Nancy Drew Girl Detective #17 Night of the Living Chatchke, 'The Secret Within' Book One, Nancy's father invites her to Istanbul, Turkey, where they stay [...]