165 results on '"Kitaoka, Yasuo"'
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2. Growth of GaN films with low oxygen concentration using Ga 2O vapor and NH 3
3. Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates
4. Crystal growth of [formula omitted] in a dry atmosphere and from a stoichiometric melt composition
5. Vapor-phase epitaxy of high-crystallinity GaN films using Ga 2O vapor and NH 3
6. Growth of thin rubrene single crystals from 1-propanol solvent
7. Study of the metastable region in the growth of GaN using the Na flux method
8. Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction
9. Development of DAST-derivative crystals for terahertz waves generation
10. Effect of carbon additive on increases in the growth rate of 2 in GaN single crystals in the Na flux method
11. Effect of water impurity in CsLi[B.sub.6][O.sub.10] crystals on bulk laser-induced damage threshold and transmittance in the ultraviolet region
12. Intensity noise of laser diodes with optical feedback
13. High-powered green light generation by interactivity frequency doubling using grating feedback optics
14. Efficient planar-type butt coupling of a proton-exchanged waveguide on a Z-cut LiTaO3 substrate
15. Frequency Doubling of a Laser Diode Using a Domain-Inverted LiTaO3Waveguide with a Monolithic Bragg Reflector
16. Frequency doubling of wavelength locked laser diOde with a transmission-type filter in a confocal optical configuratiOn
17. Control of Growth Facets and Dislocation Propagation Behavior in the Na-Flux Growth of GaN
18. Technological Development for Advanced Materials Underpinning the Industrial Competitiveness of Japan
19. Liquid-phase epitaxy of 2H–SiC film on a (0001) 4H–SiC substrate in Li–Si melt
20. Research and Development Policy in Japan to Lead to Innovation
21. Growth of 2H–SiC single crystals in a Li-based flux
22. Control of the Growth Habit in the Na Flux Growth of GaN Single Crystals
23. Growth of a Thick 2H-SiC Layer in Si-Li Solution under a Continuous CH4 Flow
24. The Effects of Ba-Additive on Growth ofa-Plane GaN Single Crystals Using Na Flux Method
25. The Effects of Ba-Additive on Growth of $a$-Plane GaN Single Crystals Using Na Flux Method
26. The Effects of Substrate Surface Treatments on Growth ofa-Plane GaN Single Crystals Using Na Flux Method
27. The Effects of Substrate Surface Treatments on Growth of $a$-Plane GaN Single Crystals Using Na Flux Method
28. Growth of GaN films with low oxygen concentration using Ga2O vapor and NH3
29. Optimization of initial MOVPE growth of non‐polar m‐ and a‐plane GaN on Na flux grown LPE‐GaN substrates
30. Nonpolara-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
31. Control of Growth Facets and Dislocation Propagation Behavior in the Na-Flux Growth of GaN
32. Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method
33. Accurate measurement of quadratic nonlinear-optical coefficients of gallium nitride
34. Polymorphs of Rubrene Crystal Grown from Solution
35. Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method
36. Bulk Crystal Growth of Stilbazolium Derivatives for Terahertz Waves Generation
37. Characterization of CsLiB6O10 Crystal Grown in a Dry Atmosphere
38. Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process
39. Crystal growth of in a dry atmosphere and from a stoichiometric melt composition
40. Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3
41. Terahertz Emission from Coherent Phonon in Lithium Ternary Chalcopyrite Crystals Illuminated by Femtosecond Laser Pulses
42. Observation of Strain Effects of SrTiO3Thin Films by Terahertz Time-Domain Spectroscopy with a 4-Dimethylamino-N-methyl-4-stilbazolium Tosylate Emitter
43. Effect of Water Impurity in CsLiB6O10 Crystals on UV Optical Properties
44. Organic Crystals for Terahertz Time Domain Spectroscopy Source
45. Solution Growth of Rubrene Single Crystals Using Various Organic Solvents
46. Surface Characterization of GaN(0001) Grown by Liquid Phase Epitaxy Using Coaxial Impact-Collision Ion Scattering Spectroscopy
47. LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method
48. Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System
49. Effect of carbon additive on increases in the growth rate of 2in GaN single crystals in the Na flux method
50. Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB_6O_10 in an external resonator
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