160 results on '"Kittl, J.A."'
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2. Germanium-related deep electron traps in ALD-grown HfO2 insulators studied through Exhaustive PhotoDepopulation Spectroscopy
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3. Study of the impact of doping concentration and Schottky barrier height on ohmic contacts to n-type germanium
4. Electron barrier height at CuxTe1 − x/Al2O3 interfaces of conducting bridge memory stacks
5. Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems
6. Rare-earth aluminates as a charge trapping materials for NAND flash memories: Integration and electrical evaluation
7. Towards barrier height modulation in HfO 2/TiN by oxygen scavenging – Dielectric defects or metal induced gap states?
8. Effect of the composition on the bandgap width of high-κ Me xTi yO z (Me = Hf, Ta, Sr) layers
9. Strontium niobate high- k dielectrics: Film deposition and material properties
10. Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high- k oxides by attenuated total reflectance infrared spectroscopy
11. Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO 3 layers
12. Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memory
13. High- k dielectrics for future generation memory devices (Invited Paper)
14. Sr excess accommodation in ALD grown SrTiO 3 and its impact on the dielectric response
15. Silicides and germanides for nano-CMOS applications
16. Stress evolution during Ni–Si compound formation for fully silicided (FUSI) gates
17. Modulation of the effective work function of fully-silicided (FUSI) gate stacks
18. NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase
19. Phase effects and short gate length device implementation of Ni fully silicided (FUSI) gates
20. Study of silicide contacts to SiGe source/drain
21. Effect of Mo doping on accelerated growth of C-54 TiSi2: evidence for template mechanism
22. Study of thermal stability of nickel silicide by X-ray reflectivity
23. Low temperature spike anneal for Ni-silicide formation
24. Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies
25. Reaction of Ni and Si0.8Ge0.2: phase formation and thermal stability
26. Time-resolved temperature measurements during rapid solidification of Si-As alloys induced by pulsed-laser melting
27. Ni- and Co-based silicides for advanced CMOS applications
28. Thickness scaling issues of Ni silicide
29. Complete experimental test of kinetic models for rapid alloy solidification
30. Salicides: materials, scaling and manufacturability issues for future integrated circuits ( invited)
31. Thermally stable high effective work function TaCN thin films for metal gate electrode applications
32. The relation between phase transformation and onset of thermal degradation in nanoscale CoSi2-polycrystalline silicone structures
33. Field-driven ultrafast sub-ns programming in WAl 2O 3TiCuTe-based 1T1R CBRAM system
34. Electron barrier height at CuxTe1−x/Al2O3 interfaces of conducting bridge memory stacks
35. Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM
36. Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering
37. Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
38. 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
39. (Invited) Plasma Enhanced Atomic Layer Deposited Ruthenium for MIMCAP Applications
40. Towards barrier height modulation in HfO2/TiN by oxygen scavenging – Dielectric defects or metal induced gap states?
41. Effect of the composition on the bandgap width of high-κ MexTiyOz (Me = Hf, Ta, Sr) layers
42. Investigation of rare-earth aluminates as alternative trapping materials in Flash memories
43. Sr excess accommodation in ALD grown SrTiO3 and its impact on the dielectric response
44. Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layers
45. Advanced Ni-based Fully SIlicidation (FUSI) technology for sub-45nm CMOS devices
46. Linewidth effect and phase control in Ni fully silicided gates
47. Effect of SIIS on work function of self-aligned PtSi FUSI metal-gated capacitors
48. Yb-doped Ni FUSI for the n-MOSFETs gate electrode application
49. Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects
50. Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates
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