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13. High- k dielectrics for future generation memory devices (Invited Paper)

21. Effect of Mo doping on accelerated growth of C-54 TiSi2: evidence for template mechanism

26. Time-resolved temperature measurements during rapid solidification of Si-As alloys induced by pulsed-laser melting

31. Thermally stable high effective work function TaCN thin films for metal gate electrode applications

32. The relation between phase transformation and onset of thermal degradation in nanoscale CoSi2-polycrystalline silicone structures

33. Field-driven ultrafast sub-ns programming in WAl 2O 3TiCuTe-based 1T1R CBRAM system

35. Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM

36. Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

37. Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system

38. 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

39. (Invited) Plasma Enhanced Atomic Layer Deposited Ruthenium for MIMCAP Applications

42. Investigation of rare-earth aluminates as alternative trapping materials in Flash memories

46. Linewidth effect and phase control in Ni fully silicided gates

50. Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates