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Your search keyword '"Kiyuna, Tatsuya"' showing total 11 results
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11 results on '"Kiyuna, Tatsuya"'

1. Low-noise analog ASIC for silicon and CdTe sensors

Author

Kishishita, Tetsuichi, Sato, Goro, Takahashi, Tadayuki, Kiyuna, Tatsuya, and Mito, Yoshio

Subjects
Application-specific integrated circuits -- Design and construction, Custom integrated circuits -- Design and construction, Silicon diodes -- Equipment and supplies, Application-specific integrated circuit, Custom IC, Business, Electronics, Electronics and electrical industries
Published
2010

4. Development of ASICs for CdTe pixel and line sensors

Author

Tamura, Ken-ichi, Hiruta, Tatsuro, Ikeda, Hirokazu, Inoue, Hokuto, Kiyuna, Tatsuya, Kobayashi, Yoshihito, Nakazawa, Kazuhiro, Takashima, Takeshi, and Takahashi, Tadayuki

Subjects
Semiconductor industry, Sensors, Application-specific integrated circuits, Custom integrated circuits, Semiconductor industry, Application-specific integrated circuit, Custom IC, Business, Electronics, Electronics and electrical industries
Abstract

We are developing low noise analog ASICs for hard X-ray and gamma-ray astronomy. They are based on a sub-micron CMOS process. Our design includes a finely-adjustable high-resistance circuit, which, for example, enables us to realize a pole-zero-cancellation in the analog chain. A two-dimensional ASIC with a fast read-out scheme and a one-dimensional ASIC with an improved analog design are developed and verified. With the latter ASIC connected with a CdTe detector, we have obtained a radioactive source spectrum with an energy resolution of 4.6 keV (FWHM) at 59.5 keV. Index Terms--ASIC, CdTe, gamma-ray, X-ray.

Published
2005

5. Development of low noise analog VLSI for radiation measurement

Author

Hiruta, Tatsuro, Tamura, Kenichi, Kiyuna, Tatsuya, Takashima, Takeshi, Takahashi, Tadayuki, Nakazawa, Kazuhiro, Ikeda, Hirokazu, and Kihara, Kunio

Subjects
テルル化カドミウム, 低雑音, analog VLSI, アナログ回路, アナログVLSI, ピクセル検出器, 放射線測定, signal to noise ratios, differentiator, ショットキーダイオード, Schottky diode, 大規模集積, 回路設計, circuit design, analog circuit, 信号対雑音比, very large scale integration, 微分器, low noise, ヒットチャネル, pixel detector, integrator, radiation measurement, cadmium telluride, hit channel, 積分器
Abstract

資料番号: AA0049122179

Published
2005

6. Development of a multi-channel analog VLSI for radiation sensors by using submicron CMOS processes

Author

Tamura, Kenichi, Inoue, Hokuto, Kiyuna, Tatsuya, Kobayashi, Yoshihito, Takashima, Takeshi, Takahashi, Tadayuki, Nakazawa, Kazuhiro, Ikeda, Hirokazu, and Kihara, Kunio

Subjects
semiconductor device, CMOS, analog circuit, アナログ回路, 放射線センサー, 読み出しチップ, readout chip, design optimization, 設計最適化, VLSI, multichannel device, radiation sensor, 多チャンネル装置, 半導体装置
Abstract

資料番号: AA0047899136

Published
2004

7. Influence of Substrate Bias on Hydrogenated Amorphous Carbon Films Prepared by VHF Sputtering

Author

Matsui, Kenji, Kiyuna, Tatsuya, Higa, Akira, and Toguchi, Minoru

Subjects
substrate bias, hydrogen content, infrared(IR), dangling bond, hydrogenated amorphous carbon, VHF plasma, UV-VIS, sputtering, optical energy gap
Abstract

Hydrogenated amorphous carbon (a-C:H) films were prepared by reactive very high frequency magnetron sputtering at hydrogen partial pressure of 0 Pa to 1 Pa and substrate biases 0V, 50V and 100V. Influence of substrate bias on hydrogen content, bonding hydrogen configuration and optical energy gap in the a-C:H films were investigated by FT-IR spectroscopy and UV-VIS spectroscopy. As applying substrate bias, the range of hydrogen partial pressure in which the films were able to be formed become narrow. The trend of the dependence of hydrogen content in the a-C:H films prepared with. substrate bias is similar to that without substrate bias. However, the position of partial pressure at the maximum of the hydrogen content shifts toward low pressure with substrate bias. We considered that these results could be due to enhancement of etching process on growing surface by increasing substrate bias. It is also found that optical energy gaps of the films were dependent on strongly the hydrogen content. This result would suggest that the compensation of dangling bond in the films by hydrogen was concerned in optical energy gap., 紀要論文

Published
2000

8. Open-IPライブラリを用いたアナログASIC開発の現状

Author

Kishishita, Tetsuichi, Ikeda, Hirokazu, Tamura, Ken-ichi, Takahashi, Tadayuki, Kiyuna, Tatsuya, and Sakumura, Takuto

Abstract

第8回宇宙科学シンポジウム (2008年1月8日-9日. 宇宙航空研究開発機構宇宙科学研究本部(JAXA)(ISAS)相模原キャンパス), 相模原市, 神奈川県, 8ｔh Space Science Symposium (January 8-9, 2008. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency(JAXA)(ISAS)Sagamihara Campus), Sagamihara, Kanagawa Japan, 資料番号: SA6000056188, レポート番号: P5-26

Published
2008

9. 半導体検出器用低雑音アナログfront-end ASICの開発

Author

Kishishita, Tetsuichi, Ikeda, Hirokazu, Tamura, Ken-ichi, Takahashi, Tadayuki, and Kiyuna, Tatsuya

Abstract

第8回宇宙科学シンポジウム (2008年1月8日-9日. 宇宙航空研究開発機構宇宙科学研究本部(JAXA)(ISAS)相模原キャンパス), 相模原市, 神奈川県, 8ｔh Space Science Symposium (January 8-9, 2008. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency(JAXA)(ISAS)Sagamihara Campus), Sagamihara, Kanagawa Japan, 資料番号: SA6000056187, レポート番号: P5-25

Published
2008

11. VHFスパッタリング法により作製した水素化アモルファス炭素薄膜の基板バイアスの効果

Author

松井, 謙治, 喜友名, 達也, 比嘉, 晃, 渡久地, 實, Matsui, Kenji, Kiyuna, Tatsuya, Higa, Akira, Toguchi, Minoru, 松井, 謙治, 喜友名, 達也, 比嘉, 晃, 渡久地, 實, Matsui, Kenji, Kiyuna, Tatsuya, Higa, Akira, and Toguchi, Minoru

Abstract

Hydrogenated amorphous carbon (a-C:H) films were prepared by reactive very high frequency magnetron sputtering at hydrogen partial pressure of 0 Pa to 1 Pa and substrate biases 0V, 50V and 100V. Influence of substrate bias on hydrogen content, bonding hydrogen configuration and optical energy gap in the a-C:H films were investigated by FT-IR spectroscopy and UV-VIS spectroscopy. As applying substrate bias, the range of hydrogen partial pressure in which the films were able to be formed become narrow. The trend of the dependence of hydrogen content in the a-C:H films prepared with. substrate bias is similar to that without substrate bias. However, the position of partial pressure at the maximum of the hydrogen content shifts toward low pressure with substrate bias. We considered that these results could be due to enhancement of etching process on growing surface by increasing substrate bias. It is also found that optical energy gaps of the films were dependent on strongly the hydrogen content. This result would suggest that the compensation of dangling bond in the films by hydrogen was concerned in optical energy gap.

Published
2000

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