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Unbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead iodide light-emitting transistors has proven effective to increase the brightness of light emission, up to MHz frequencies. In this work, we developed a new approach to improve charge carrier injection and enhance electroluminescence of perovskite light-emitting transistors by independent control of drain-source and gate-source bias voltages to compensate for space-charge effects. Optimization of bias pulse synchronization induces a fourfold enhancement of the emission intensity. Interestingly, the optimal phase delay between biasing pulses depends on modulation frequency due to the capacitive nature of the devices, which is well captured by numerical simulations of an equivalent electrical circuit. These results provide new insights into the electroluminescence dynamics of AC-driven perovskite light-emitting transistors and demonstrate an effective strategy to optimize device performance through independent control of amplitude, frequency, and phase of the biasing pulses.

Achieving electrical injection of exciton-polaritons, half-light, half-matter quasiparticles arising from the strong coupling between photonic and excitonic resonances, is a crucial milestone to scale up polaritonic devices such as optical computers, quantum simulators and inversionless lasers. Here we present a new approach to achieve strong coupling between electrically injected excitons and photonic bound states in the continuum of a dielectric metasurface monolithically patterned in the channel of a light-emitting transistor. Exciton-polaritons are generated by coupling electrically injected excitons in the gate-induced transport channel with a Bloch mode of the metasurface, and decay into photons emitted from the top surface of the transistor. Thanks to the high-finesse of the metasurface cavity, we achieve a large Rabi splitting of ~200 meV and more than 50-fold enhancement of the polaritonic emission over the intrinsic excitonic emission of the perovskite film. Moreover, we show that the directionality of polaritonic electroluminescence can be dynamically tuned by varying the source-drain bias which controls the radiative recombination zone of the excitons. We argue that this approach provides a new platform to study strong light-matter interaction in dispersion engineered photonic cavities under electrical injection, and paves the way to solution-processed electrically pumped polariton lasers.

Emerging immersive visual communication technologies require light sources with complex functionality for dynamic control of polarization, directivity, wavefront, spectrum, and intensity of light. Currently, this is mostly achieved by free space bulk optic elements, limiting the adoption of these technologies. Flat optics based on artificially structured metasurfaces that operate at the sub-wavelength scale are a viable solution, however their integration into electrically driven devices remains challenging. Here we demonstrate a radically new approach of monolithic integration of a dielectric metasurface into a perovskite light-emitting transistor. We show that nanogratings directly structured on top of the transistor channel yield an 8-fold increase of electroluminescence intensity and dynamic tunability of polarization. This new light-emitting metatransistor device concept opens unlimited opportunities for light management strategies based on metasurface design and integration.

The Rashba effect, i.e., the splitting of electronic spin-polarized bands in the momentum space of a crystal with broken inversion symmetry, has enabled the realization of spin-orbitronic devices, in which spins are manipulated by spin-orbit coupling. In optics, where the helicity of light polarization represents the spin degree of freedom for spin-momentum coupling, the optical Rashba effect is manifested by the splitting of optical states with opposite chirality in the momentum space. Previous realizations of the optical Rashba effect relied on passive devices determining either the propagation direction of surface plasmons or circularly polarized light into nanostructures, or the directional emission of polarized luminescence from metamaterials hybridized with light-emitting media. Here we demonstrate an active device underpinned by the optical Rashba effect, in which a monolithic halide perovskite metasurface emits highly directional chiral photoluminescence. An all-dielectric metasurface design with broken in-plane inversion symmetry is directly embossed into the high refractive index, light-emitting perovskite film, yielding a degree of circular polarization of photoluminescence of 40% at room temperature - more than one order of magnitude greater than in state of art chiral perovskites.

Since the invention of the laser, adoption of new gain media and device architectures has provided solutions to a variety of applications requiring specific power, size, spectral, spatial, and temporal tunability. Here we introduce a fundamentally new type of tunable semiconductor laser based on a phase-change perovskite metasurface that acts simultaneously as gain medium and optical cavity. As a proof of principle demonstration, we fabricate a subwavelength-thin perovskite metasurface supporting bound states in the continuum (BICs). Upon the perovskite structural phase transitions, both its refractive index and gain vary substantially, inducing fast (1.35 nm/K rate) and broad spectral tunability (>15 nm in the near-infrared), deterministic spatial mode hopping between polarization vortexes, and hysteretic optical bistability of the microlaser. These features highlight the uniqueness of phase-change perovskite tunable lasers, which may find wide applications in compact and low-cost optical multiplexers, sensors, memories, and LIDARs.