629 results on '"Kneissl, M."'
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2. Effect of the Hole Mobility on the Emission Spectrum of a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode
3. Simulation of optical gain in AlGaN quantum wells
4. Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs.
5. Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations
6. Surface properties of AlInGaN/GaN heterostructure
7. Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs
8. Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates
9. Analysis of crystal orientation in AlN layers grown on m-plane sapphire
10. Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers
11. Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes
12. Carrier Transport in Multi Colour Deep Ultraviolet Light Emitting Diodes
13. Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures
14. Low-threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning
15. High quality AlGaN grown on ELO AlN/sapphire templates
16. Role of nitridation on polarity and growth of InN by metal–organic vapor phase epitaxy
17. Controlled coalescence of MOVPE grown AlN during lateral overgrowth
18. Structural and optical properties of semipolar [formula omitted] AlGaN grown on [formula omitted] sapphire by metal–organic vapor phase epitaxy
19. MOVPE growth of semipolar [formula omitted] AlN on m-plane [formula omitted] sapphire
20. Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfection
21. Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate
22. High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor
23. Growth of AlGaN and AlN on patterned AlN/sapphire templates
24. Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements
25. DLTS-based defect analysis in UV-C single QW LEDs during a constant current stress
26. Well width study of InGaN multiple quantum wells for blue–green emitter
27. Epitaxial lateral overgrowth on (2 1¯ 1¯ 0) a-plane GaN with [0 1¯ 1 1]-oriented stripes
28. Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs.
29. Growth and characterization of manganese-doped InAsP
30. The critical thickness of InGaN on (0 0 0 1)GaN
31. Effect of the AIN nucleation layer growth on AlN material quality
32. Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes
33. Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations
34. Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies
35. Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering
36. Advances towards deep-UV light emitting diode technologies
37. Low resistance n-contact for UVC LEDs by a two-step plasma etching process
38. Laser gain properties of AlGaN quantum wells
39. 9.1 Laser diodes in the visible spectral range:GaN-based blue and green laser diodes
40. Band Gap Shift of GaN under Uniaxial Strain Compression
41. Vibrational Spectroscopy of GaN:Mg Under Pressure
42. Disordering of InGaN/GaN Superlattices after High-Pressure Annealing
43. Identification, characterization and chromosomal localization of the cognate human and murine DBF4 genes
44. Vertical conductivity and Poole–Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction
45. Electrical compensation and cation vacancies in Al rich Si-doped AlGaN
46. Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope
47. Low resistance n-contact for UVC LEDs by a two-step plasma etching process
48. Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
49. Design and performance of asymmetric waveguide nitride laser diodes
50. Structure investigations of nonpolar GaN layers
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