238 results on '"Koehler, Andrew"'
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2. ESCAPE, PLASMA AND ACCELERATION DYNAMICS EXPLORERS (ESCAPADE) MISSION DESIGN
3. Dose Rate Considerations for Semiconductor Electronics: Why Current Variations Enable Unique GaN-based Transmission Electron Microscopy
4. Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability
5. 'NO RIGHT IS MORE PRECIOUS': COMMON GOOD SOLUTIONS TO BALLOT ACCESS JURISPRUDENCE
6. PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates
7. Catalytic Upgrading of Wet Waste-Derived Carboxylic Acids to Sustainable Aviation Fuel and Chemical Feedstocks
8. Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance
9. PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates.
10. Comment: Expert Elicitation for Reliable System Design
11. Effect of GaN/AlGaN buffer thickness on the electrothermal performance of AlGaN/GaN HEMTs on engineered substrates
12. Examination of Trapping Effects on Single-Event Transients in GaN HEMTs
13. Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance
14. Design, Packaging, and Empirical Characterization of 1 kV Vertical GaN P-N Diode
15. Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates.
16. Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations
17. SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process
18. Strain Effects in AlGaN/GaN HEMTs
19. A Simple Edge Termination Design for Vertical GaN P-N Diodes
20. Impact of Anode Doping on Avalanche in Vertical GaN Pin Diodes with Hybrid Edge Termination Design
21. Using Data Science and Machine Learning to Predict the Failure Rate of Pin Diodes
22. Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing
23. AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices
24. Characterization and Modeling of a 1.3 kV Vertical GaN Diode
25. Supercritical Methanol Solvolysis and Catalysis for the Conversion of Delignified Woody Biomass into Light Alcohol Gasoline Bioblendstock
26. Comment: Expert Elicitation for Reliable System Design
27. Using Wafer Scale Optical Profilometry to Estimate the Failure Rate of Vertical Pin GaN Diodes
28. (Invited) Vertical Gallium Nitride PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics
29. Problems with nuclear power
30. Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy
31. Vapor-phase conversion of aqueous 3-hydroxybutyric acid and crotonic acid to propylene over solid acid catalysts
32. (Invited) Ga2O3 Phase Control and Heterojunctions Using Plasma-Enhanced Atomic Layer Epitaxy
33. A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes
34. Strain Effects in AlGaN/GaN HEMTs
35. Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments
36. Room-temperature skyrmions in strain-engineered FeGe thin films
37. Optical Investigation of Proton‐Irradiated Metal Organic Chemical Vapor Deposition AlGaN/GaN High‐Electron‐Mobility Transistor Structures
38. Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
39. Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation
40. Demonstration of CuI as a P–N heterojunction toβ-Ga2O3
41. (Invited) Ion Implantation and Activation of n- and p-Type Dopants in GaN
42. GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging
43. Vertical power devices enabled by bulk GaN substrates
44. Lateral GaN JFET Devices on Large Area Engineered Substrates
45. Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3
46. High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen
47. Lateral GaN JFET Devices on 200 mm Engineered Substrates for Power Switching Applications
48. Moral Rorschachs: '1984' and 'The Plague' after half a century
49. Vertical and Lateral GaN Power Devices Enabled by Engineered GaN Substrates
50. Thermal Performance Improvement of GaN-on-Diamond High Electron Mobility Transistors
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