46 results on '"Kohen, David"'
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2. Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers
3. Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers
4. Cu2ZnSn(S1−xSex)4 thin films for photovoltaic applications: Influence of the precursor stacking order on the selenization process
5. Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications
6. Aluminum catalyzed growth of silicon nanowires: Al atom location and the influence of silicon precursor pressure on the morphology
7. Patterned growth of high aspect ratio silicon wire arrays at moderate temperature
8. Nanowire-Based Solar Cells
9. Recess-type waveguide integrated germanium on silicon avalanche photodiode
10. Epitaxial Growth of Ga-doped SiGe for Reduction of Contact Resistance in finFET Source/Drain Materials
11. Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform
12. Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment
13. Epitaxial GeSn: impact of process conditions on material quality
14. #AiMES2018_20181002_1400_Low-T-SiGe_Porret
15. Abrupt SiGe-to-Si interface: influence of chemical vapor deposition processes and characterization by different metrology techniques
16. (Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in Finfet, Stacked Nanowires and Monolithic 3D Integration
17. Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform.
18. Fundamentals of Ge 1−x Sn x and Si y Ge 1−x-y Sn x RPCVD epitaxy
19. MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS
20. Heteroepitaxial growth of In In[subscript 0.30]Ga[subscript 0.70]As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
21. PPAC scaling enablement for 5nm mobile SoC technology
22. Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications
23. Study of silicon nanowires and their integration into photovoltaic systems
24. (Invited) Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs
25. Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
26. Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process
27. Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe
28. Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform
29. Étude des nanofils de silicium et de leur intégration dans des systèmes de récupération d'énergie photovoltaïque
30. The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD – Application to a 200mm GaAs virtual substrate
31. Monolithic integration of III–V HEMT and Si-CMOS through TSV-less 3D wafer stacking
32. Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications.
33. (Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration
34. Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer.
35. Cu2ZnSn(S1−xSex)4 based solar cell produced by selenization of vacuum deposited precursors
36. Al catalyzed growth of silicon nanowires and subsequent in situ dry etching of the catalyst for photovoltaic application
37. Electrical Properties of III-V/Oxide Interfaces
38. Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures
39. The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD – Application to a 200 mm GaAs virtual substrate.
40. (Invited) Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs
41. Al catalyzed growth of silicon nanowires and subsequent in situdry etching of the catalyst for photovoltaic application
42. A Proposal for a Constitutional Innkeepers' Lien Statute
43. A Proposal for a Constitutional Innkeepers' Lien Statute
44. Cu2ZnSn(S1−x Se x )4 based solar cell produced by selenization of vacuum deposited precursors
45. Fundamentals of Ge1−xSnx and SiyGe1−x-ySnx RPCVD epitaxy.
46. Cu2ZnSn(S1 − x Se x )4 thin films for photovoltaic applications: Influence of the precursor stacking order on the selenization process.
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