5 results on '"Kol'dyaev, V.I."'
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2. Study of the influence of the nonequilibrium point defect concentration gradient on the dopant flux during ion implantation in silicon at high temperatures
3. A high-accuracy comprehensive high-frequency model of a VLSI spiral inductor.
4. Impact of the gradient of the non-equilibrium point defect concentration on the dopant flux in silicon.
5. Impact of the gradient of the non-equilibrium point defect concentration on the dopant flux in silicon
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