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1. Impact of the transmission line properties of a metal-ultrathin silicon dioxide-semiconductor field-effect transistor on the extracted inversion-layer thickness

Author

Kol'dyaev, V.I., Deferm, L., Clerix, A., and Van Overstraeten, R.

Subjects
Metal oxide semiconductor field effect transistors -- Research, Thin films -- Research, Physics
Abstract

Research was conducted to study the impact of transmission line properties of a metal-ultrathin silicon dioxide-semiconductor field-effect transistor on the extracted inversion-layer thickness. Capacitance measurements were determined using a novel model for the gate-to-channel capacitance taking into account quantum and transmission line effects in all the regimes. Results obtained from using capacitance-voltage method are presented.

Published
1998

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