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The work provides a comprehensive explanation of the nature of chemical bonding through quantum chemical topology for multilayers of A III B VI compounds, such as GaSe, InSe, and GaTe, spanning pressures from 0 GPa to 30 GPa. These compounds are subjected to pressure orthogonal to the multilayers. Quantum chemical topological indices indicate that uniaxial pressure induces changes in hybridisation, leading to the disappearance of interlayer van der Waals forces. The distinct nature of the elements within the compounds results in different pressures at which van der Waals interactions disappear, as revealed by non-covalent interaction analysis. The presence or absence of chemical bonding is assessed by quantum topological indices as Espinosa indices, charge density distribution difference, and crystal orbital Hamilton populations. The varying changes in hybridisation, as indicated by topological indices, are corroborated by variations in the population of the electronic projected density of states. Ultimately, the type of chemical bonding is identified through the Espinosa indices in the field of Bader theory. This analysis confirms the existence of shared shell bonds between A III and B VI atoms in vacuum that goes to an intermediate bond between shared and closed shells called the transition zone with increasing pressure. The implications and importance of this work extend beyond the presented results. It suggests that many other classes of two-dimensional materials may undergo phase transitions under uniaxial stress, leading to the formation of new phases with potentially interesting electronic properties.

The disorder-to-order (crystallization) process in phase-change materials determines the speed and storage polymorphism of phase-change memory devices. Only by clarifying the fine-structure variation can the devices be insightfully designed, and encode and store information. As essential phase-change parent materials, the crystallized Sb-Te binary system is generally considered to have the cationic/anionic site occupied by Sb/Te atoms. Here, direct atomic identification and simulation demonstrate that the ultrafast crystallization speed of Sb-Te materials is due to the random nature of lattice site occupation by different classes of atoms with the resulting octahedral motifs having high similarity to the amorphous state. It is further proved that after atomic ordering with disordered chemical occupation, chemical ordering takes place, which results in different storage states with different resistance values. These new insights into the complicated route from disorder to order will play an essential role in designing neuromorphic devices with varying polymorphisms., (© 2023 The Authors. Advanced Science published by Wiley-VCH GmbH.)

The functional state of the placenta and extraplacental membranes, determined by their morphological characteristics, is of key importance in the implementation of both physiological and complicated pregnancy. Of great practical value for the diagnosis of congenital infections is the morphological study of the placenta, extraplacental membranes and umbilical cord, which allows optimizing the supervision of newborns and preventing the development of severe perinatal complications. This article presents methodological approaches to the morphological study of the placenta, extraplacental membranes and umbilical cord in infectious pathologies of both bacterial (ascending intraamniotic infection) etiology and viral placentitis caused by parvovirus, human immunodeficiency virus, respiratory syncytial virus, viruses of the Herpesviridae family - herpes simplex viruses types 1 and 2, cytomegalovirus and Epstein - Barr virus) and SARS-CoV-2 with a description of the morphological features of typical changes and immunohistochemical verification of their etiology.

Ultrathin solid slabs often have properties different from those of the bulk phase. This effect can be observed both in traditional three-dimensional materials and in van der Waals (vdW) solids in the few monolayer limit. In the present work, the band gap variation of the CdTe slabs, induced by their thickness, was studied by the density functional theory (DFT) method for the sphalerite (zinc-blende) phase and for the recently proposed inverted phase. The sphalerite phase has the Te-Cd-Te-Cd atomic plane sequence, while in the inverted phase Cd atoms are sandwiched by Te planes forming vdW blocks with the sequence Te-Cd-Cd-Te. Based on these building blocks, a bulk vdW CdTe crystal was built, whose thermodynamical stability was verified by DFT calculations. Band structures and partial densities of states for sphalerite and inverted phases were calculated. It was demonstrated for both phases that using slabs with a thickness of one to several monolayers for sphalerite phase (vdW blocks for inverted phase), structures with band gaps varying in a wide range can be obtained. The presented results allow us to argue that ultrathin CdTe can be a promising electronic material.

S- and Se-based chalcogenide glasses are intrinsically metastable and exhibit a number of photo-induced effects unique to this class of materials, reversible photostructural changes and photo-induced anisotropy being major examples. These effects are usually interpreted in terms of the formation of valence alternation pairs and 'wrong' bonds. In this work, using density functional theory simulations, we demonstrate for the case example of As2S3 that a strong decrease in the optical band gap can be achieved if a polymorphic transformation of the local structure from orpiment to that of tetradymite takes place. For the formation of the latter, the presence of lone-pair electrons in near-linear atomic configurations is crucial. Our results represent a novel approach to understanding the photo-induced structural changes in chalcogenide glasses as being due to the presence of polymorphism, and will lead to their wider use in various photonic devices.

In this work, the size transformation of the TiO 2 nanofraction from pharmaceutical grade E171 powder was studied during its transit through the gastrointestinal tract (GIT). It was shown that pharmaceutical-grade TiO 2 powder contained about 0.68% ( w / w ) of particles smaller than 240 nm in diameter. In the observed GIT transit process the TiO 2 nanoparticles were agglomerated up to 150-200 nm in simulated salivary fluid, with gradual agglomerate enlargement up to 300-600 nm and more than 1 micron in simulated gastric fluid. In the intestinal fluid the reverse process occurred, involving a decrease of agglomerates accompanied by the formation of a small fraction with ~50 nm average size. This fraction can be further involved in the histohematic transport process. The acidity degree (pH) and mineral composition of solutions, as well as the transit speed along the gastrointestinal tract, influence the nature of the particle transformation significantly. The rapid passing between the gastrointestinal tract sections creates conditions for a decrease in part of the TiO 2 particles, up to 100 nm, and may be associated with the violation of the structural and functional integrity of the intestinal mucus layer.

Crystalline transition-metal chalcogenides are the focus of solid state research. At the same time, very little is known about amorphous chalcogenides doped with transition metals. To close this gap, we have studied, using first principle simulations, the effect of doping the typical chalcogenide glass As 2 S 3 with transition metals (Mo, W and V). While the undoped glass is a semiconductor with a density functional theory gap of about 1 eV, doping results in the formation of a finite density of states (semiconductor-to-metal transformation) at the Fermi level accompanied by an appearance of magnetic properties, the magnetic character depending on the nature of the dopant. Whilst the magnetic response is mainly associated with d -orbitals of the transition metal dopants, partial densities of spin-up and spin-down states associated with arsenic and sulphur also become slightly asymmetric. Our results demonstrate that chalcogenide glasses doped with transition metals may become a technologically important material.

In order to identify corresponding amino acid sequences (pentapeptides) between the SPs, MPs and NPs of human coronaviruses and human autoantigens targeted in autoimmune endocrinopathies, and for a comparative analysis of the various coronaviruses proteome and the proteome of human, the original computer program was used. Quantitatively, SP, MP and NP of the human coronaviruses were found to share totally 117 minimal immune pentapeptide epitopes: 79 in SP, 14 in MP and 24 in NP, - with 18 autoantigens expressed by human endocrinocytes. The shared pentapeptides belong to the proteins of human endocrine cells. Samples of the pituitary, adrenal and thyroid from patients who died from coronavirus infection (COVID-19) were studied morphologically using histochemical methods. A high incidence of SARS-CoV-2 infection of endocrine cells was showed. The high affinity of SARS-CoV-2 the cells of the adenohypophysis was revealed, but there was no expression of viral proteins by the cells of the neurohypophysis. The foci of lesions in endocrine organs contained abundant lymphocytic infiltrates which may indicate the impact of autoimmune processes. Autoimmune disorders have a multi-faceted etiology and depend on polygenic predispose and additive action of many epigenetic and environmental factors causing hyperstimulation of imperfectly functioning immune system. It means that the phenomenon of molecular mimicry cannot be blamed as their single prerequisite, but it is just a tile in mosaic of autoimmunity. The facts revealed emphasize the need of endocrinological diagnostic alertness of a physician while observing patients with post-vaccination and post-COVID-19 health disorders.

Two-dimensional (2D) van der Waals (vdW) materials possess a crystal structure in which a covalently-bonded few atomic-layer motif forms a single unit with individual motifs being weakly bound to each other by vdW forces. Cr 2 Ge 2 Te 6 is known as a 2D vdW ferromagnetic insulator as well as a potential phase change material for non-volatile memory applications. Here, we provide evidence for a dimensional transformation in the chemical bonding from a randomly bonded three-dimensional (3D) disordered amorphous phase to a 2D bonded vdW crystalline phase. A counterintuitive metastable "quasi-layered" state during crystallization that exhibits both "long-range order and short-range disorder" with respect to atomic alignment clearly distinguishes the system from conventional materials. This unusual behavior is thought to originate from the 2D nature of the crystalline phase. These observations provide insight into the crystallization mechanism of layered materials in general, and consequently, will be useful for the realization of 2D vdW material-based functional nanoelectronic device applications.

The properties of group III-Nitrides (III-N) such as a large direct bandgap, high melting point, and high breakdown voltage make them very attractive for optoelectronic applications. However, conventional epitaxy on SiC and sapphire substrates results in strained and defective films with consequently poor device performance. In this work, by studying the nucleation of GaN on graphene/SiC by MOVPE, we unambiguously demonstrate the possibility of remote van der Waals epitaxy. By choosing the appropriate growth conditions, GaN crystals can grow either in-plane misoriented or fully epitaxial to the substrate. The adhesion forces across the GaN and graphene interface are very weak and the micron-scale nuclei can be easily moved around. The combined use of x-ray diffraction and transmission electron microscopy demonstrate the growth of stress-free and dislocation-free crystals. The high quality of the crystals was further confirmed by photoluminescence measurements. First principles calculations additionally highlighted the importance of the polarity of the underlying substrate. This work lays the first brick towards the synthesis of high quality III-N thin films grown via van der Waals epitaxy.

Cr 2 Ge 2 Te 6 (CrGT) is a phase change material with higher resistivity in the crystalline phase than in the amorphous phase. CrGT exhibits an ultralow operation energy for amorphization. In this study, the origin of the increased resistance in crystalline CrGT compared to amorphous CrGT and the underlying phase change mechanism were investigated in terms of both local structural change and associated change in electronic state. The density of states at the Fermi level in crystalline CrGT decreased with increasing annealing temperature and became negligible upon annealing at 380 °C. Simultaneously, the Fermi level shifted from the vicinity of the valence band to the band gap center, leading to an increase in resistance. The phase change from amorphous to crystalline CrGT occurred through a metastable crystalline phase with a local structure similar to that of the amorphous phase. Cr nanoclusters were confirmed to exist in both the amorphous and crystalline phases. The presence of Cr nanoclusters induced Cr vacancies in the crystalline phase. These Cr vacancies generated hole carriers, leading to p-type conduction. Photoelectron spectroscopy of the Cr 2s core level clearly indicated a decrease in the fraction of Cr-Cr bonds and an increase in the fraction of Cr-Te bonds in crystalline CrGT upon annealing. Meanwhile, the coordination number of the Cr nanoclusters decreased as the number of Cr-Cr bonds was reduced. Together, these results imply that the origin of the increased resistance in crystalline CrGT is the filling of Cr vacancies by Cr atoms diffusing from Cr nanoclusters.

We report on pump-probe based helicity dependent time-resolved Kerr measurements under infrared excitation of chalcogenide superlattices, consisting of alternately stacked GeTe and Sb 2 Te 3 layers. The Kerr rotation signal consists of the specular inverse Faraday effect (SIFE) and the specular optical Kerr effect (SOKE), both of which are found to monotonically increase with decreasing photon energy over a sub-eV energy range. Although the dependence of the SIFE can be attributed to the response function of direct third-order nonlinear susceptibility, the magnitude of the SOKE reflects cascading second-order nonlinear susceptibility resulting from electronic transitions between bulk valence/conduction bands and interface-originating Dirac states of the superlattice.

Multilayered structures of GeTe and Sb 2 Te 3 phase change material, also referred to as interfacial phase change memory (iPCM), provide superior performance for nonvolatile electrical memory technology in which the atomically controlled structure plays an important role in memory operation. Here, we report on terahertz (THz) wave generation measurements. Three- and 20-layer iPCM samples were irradiated with a femtosecond laser, and the generated THz radiation was observed. The emitted THz pulse was found to be always p polarized independent of the polarization of the excitation pulse. Based on the polarization dependence as well as the flip of the THz field from photoexcited Sb 2 Te 3 and Bi 2 Te 3 , the THz emission process can be attributed to the surge current flow due to the built-in surface depletion layer formed in p-type semiconducting iPCM materials.

We have systematically investigated the spatial and temporal dynamics of crystallization that occur in the phase-change material Ge_{2}Sb_{2}Te_{5} upon irradiation with an intense terahertz (THz) pulse. THz-pump-optical-probe spectroscopy revealed that Zener tunneling induces a nonlinear increase in the conductivity of the crystalline phase. This fact causes the large enhancement of electric field associated with the THz pulses only at the edge of the crystallized area. The electric field concentrating in this area causes a temperature increase via Joule heating, which in turn leads to nanometer-scale crystal growth parallel to the field and the formation of filamentary conductive domains across the sample.

A number of experiments on mouse tumor models, as well as certain clinical data, have demonstrated, that antiangiogenic therapy can lead to transient improvement in tumor oxygenation, that allows to increase efficiency of following radiotherapy. In the majority of works, this phenomenon has been explained by enhanced tumor perfusion due to normalization of capillaries' structure, that results in elevated oxygen inflow in tumor. However, changes in tumor perfusion often haven't been directly measured in relevant works, moreover, antiangiogenic therapy has been proven to have ambiguous effect on tumor perfusion both in mouse tumor models and in clinics. Herein, we suggest that elevation of blood perfusion may be not the only reason for transient alleviation of tumor hypoxia, and that it may manifest itself even under unchanged tumor blood flow. We propose that it may be as well caused by the decrease in tumor oxygen consumption rate (OCR) due to the reduction of tumor proliferation level, caused by nutrient shortage in result of antiangiogenic treatment. We provide detailed explanation of this hypothesis and visualize it using a specially developed mathematical model, which takes into account basic features of tumor growth and antiangiogenic therapy. We investigate the influence of the model parameters on oxygen dynamics; demonstrate, that transient alleviation of tumor hypoxia occurs in a fairly wide range of physiologically justified values of parameters; and point out the major factors, that determine oxygen dynamics during antiangiogenic therapy., (Copyright © 2018 Elsevier Ltd. All rights reserved.)

Chalcogenide superlattices (SLs), formed by the alternate stacking of GeTe and Sb 2 Te 3 layers, also referred to as interfacial phase-change memory (iPCM), are a leading candidate for spin-based memory device applications. Theoretically, the iPCM structure has been predicted to form a three-dimensional topological insulator or Dirac semimetal phase depending on the constituent layer thicknesses. Here, we experimentally investigate the topological insulating nature of chalcogenide SLs using a helicity-dependent time-resolved Kerr measurement. The helicity-dependent Kerr signal is observed to exhibit a four-cycle oscillation with π/2 periodicity, suggesting the existence of a Dirac-like cone in some chalcogenide SLs. Furthermore, we found that increasing the thickness of the GeTe layer dramatically changed the periodicity, indicating a phase transition from a Dirac semimetal into a trivial insulator. Our results demonstrate that thickness-tuned chalcogenide SLs can play an important role in the manipulation of topological states, which may open up new possibilities for spintronic devices based on chalcogenide SLs.

Topological insulators (TIs) are characterized by possessing metallic (gapless) surface states and a finite band-gap state in the bulk. As the thickness of a TI layer decreases down to a few nanometers, hybridization between the top and bottom surfaces takes place due to quantum tunneling, consequently at a critical thickness a crossover from a 3D-TI to a 2D insulator occurs. Although such a crossover is generally accessible by scanning tunneling microscopy, or by angle-resolved photoemission spectroscopy, such measurements require clean surfaces. Here, we demonstrate that a cascading nonlinear magneto-optical effect induced via strong spin-orbit coupling can examine such crossovers. The helicity dependence of the time-resolved Kerr rotation exhibits a robust change in periodicity at a critical thickness, from which it is possible to predict the formation of a Dirac cone in a film several quintuple layers thick. This method enables prediction of a Dirac cone using a fundamental nonlinear optical effect that can be applied to a wide range of TIs and related 2D materials.

Growth of Bi-Te films by helicon-wave magnetron sputtering is systematically explored using alloy targets. The film compositions obtained are found to strongly depend on both the sputtering and antenna-coil powers. The obtainable film compositions range from Bi 55 Te 45 to Bi 43 Te 57 when a Bi 2 Te 3 alloy target is used, and from Bi 42 Te 58 to Bi 40 Te 60 (Bi 2 Te 3 ) for a Te-rich Bi 30 Te 70 target. All films show strong orientation of the van der Waals layers (00l planes) parallel to the substrate. The atomic level stacking of Bi 2 Te 3 quintuple and Bi bi-layers has been directly observed by high resolution transmission electron microscopy. Band structure simulations reveal that Bi-rich Bi 4 Te 3 bulk is a zero band gap semimetal with a Dirac cone at the Gamma point when spin-orbit coupling is included. Optical measurements also confirm that the material has a zero band gap. The tunability of the composition and the topological insulating properties of the layers will enable the use of these materials for future electronics applications on an industrial scale.

Nonvolatile memory, of which phase-change memory (PCM) is a leading technology, is currently a key element of various electronics and portable systems. An important step in the development of conceptually new devices is the class of van der Waals (vdW)-bonded GeTe/Sb 2 Te 3 superlattices (SLs). With their order of magnitude faster switching rates and lower energy consumption compared to those of alloy-based devices, they are widely regarded as the next step in the implementation of PCM. In contrast to conventional PCM, where the SET and RESET states arise from the crystalline and amorphous phases, in SLs, both the SET and RESET states remain crystalline. In an earlier work, the superior performance of SLs was attributed to the reduction of entropic losses associated with the one-dimensional motion of interfacial Ge atoms located in the vicinity of Sb 2 Te 3 quintuple layers. Subsequent experimental studies using transmission electron microscopy revealed that GeTe and Sb 2 Te 3 blocks strongly intermix during the growth of the GeTe phase, challenging the original proposal but at the same time raising new fundamental issues. In this work, we propose a new approach to switching in SLs associated with the reconfiguration of vdW gaps accompanied by local deviation of stoichiometry from the GeTe/Sb 2 Te 3 quasibinary alloys. The model resolves in a natural way the existing controversies, explains the large conductivity contrast between the SET and RESET crystalline states, is not compromised by Ge/Sb intermixing, and provides a new perspective for the industrial development of memory devices based on such SLs. The proposed concept of vdW gap reconfiguration may also be applicable to designing a broad variety of engineered two-dimensional vdW solids., Competing Interests: The authors declare no competing financial interest.

The bulk band structures of a variety of artificially constructed van der Waals chalcogenide heterostructures IVTe/V 2 VI 3 (IV: C, Si, Ge, Sn, Pb; V: As, Sb, Bi; VI: S, Se, Te) have been systematically examined using ab initio simulations based on density functional theory. The crystal structure and the electronic band structure of the heterostructures were found to strongly depend on the choice of elements as well as the presence of van der Waals corrections. Furthermore, it was found that the use of the modified Becke-Johnson local density approximation functional demonstrated that a Dirac cone is formed when tensile stress is applied to a GeTe/Sb 2 Te 3 heterostructure, and the band gap can be controlled by tuning the stress. Based on these simulation results, a novel electrical switching device using a chalcogenide heterostructure is proposed.

We demonstrate that pressure-induced amorphization in Ge-Sb-Te alloys across the ferroelectric-paraelectric transition can be represented as a mixture of coherently distorted rhombohedral Ge 8 Sb 2 Te 11 and randomly distorted cubic Ge 4 Sb 2 Te 7 and high-temperature Ge 8 Sb 2 Te 11 phases. While coherent distortion in Ge 8 Sb 2 Te 11 does not prevent the crystalline state from collapsing into its amorphous counterpart in a similar manner to pure GeTe, the pressure-amorphized Ge 8 Sb 2 Te 11 phase begins to revert to the crystalline cubic phase at ∼9 GPa in contrast to Ge 4 Sb 2 Te 7 , which remains amorphous under ambient conditions when gradually decompressed from 40 GPa. Moreover, experimentally, it was observed that pressure-induced amorphization in Ge 8 Sb 2 Te 11 is a temperature-dependent process. Ge 8 Sb 2 Te 11 transforms into the amorphous phase at ∼27.5 and 25.2 GPa at room temperature and 408 K, respectively, and completely amorphizes at 32 GPa at 408 K, while some crystalline texture could be seen until 38 GPa (the last measurement point) at room temperature. To understand the origins of the temperature dependence of the pressure-induced amorphization process, density functional theory calculations were performed for compositions along the (GeTe) x - (Sb 2 Te 3 ) 1-x tie line under large hydrostatic pressures. The calculated results agreed well with the experimental data.

In this paper, the properties and stability of combustion waves propagating in the composite solid energetic material of the shell-core type are numerically investigated within the one-dimensional diffusive-thermal model with heat losses to the surroundings. The flame speed is calculated as a function of the parameters of the model. The boundaries of stability are determined in the space of parameters by solving the linear stability problem and direct integration of the governing non-stationary equations. The results are compared with the characteristics of the combustion waves in pure solid fuel. It is demonstrated that a stable travelling combustion wave solution can exist for the parameters of the model for which the flame front propagation is unstable in pure solid fuel and it can propagate several times faster even in the presence of significant heat losses.

Two-dimensional (2D) semiconductors are a very hot topic in solid state science and technology. In addition to van der Waals solids that can be easily formed into 2D layers, it was argued that single layers of nominally 3D tetrahedrally bonded semiconductors, such as GaN or ZnO, also become flat in the monolayer limit; the planar structure was also proposed for few-layers of such materials. In this work, using first-principles calculations, we demonstrate that contrary to the existing consensus the graphitic structure of few-layer GaN is unstable and spontaneously reconstructs into a structure that remains hexagonal in plane but with covalent interlayer bonds that form alternating octagonal and square (8|4 Haeckelite) rings with pronounced in-plane anisotropy. Of special interest is the transformation of the band gap from indirect in planar GaN toward direct in the Haeckelite phase, making Haeckelite few-layer GaN an appealing material for flexible nano-optoelectronics.

Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived (>100 ps) transient metastable state of Ge2Sb2Te5 with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structure experiment confirms the existence of an intermediate state with disordered bonds. This newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit, and improved energy efficiency and reliability of phase-change memory technologies.

Optical excitation of matter with linearly-polarized femtosecond pulses creates a transient non-equilibrium lattice displacement along a certain direction. Here, the pump and probe pulse polarization dependence of the photo-induced ultrafast lattice dynamics in (GeTe)2/(Sb2Te3)4 interfacial phase change memory material is investigated under obliquely incident conditions. Drastic pump polarization dependence of the coherent phonon amplitude is observed when the probe polarization angle is parallel to the c-axis of the sample, while the pump polarization dependence is negligible when the probe polarization angle is perpendicular to the c-axis. The enhancement of phonon oscillation amplitude due to pump polarization rotation for a specific probe polarization angle is only found in the early time stage (≤2 ps). These results indicate that the origin of the pump and probe polarization dependence is dominantly attributable to the anisotropically-formed photo-excited carriers which cause the directional lattice dynamics.

Using ≈40 fs ultrashort laser pulses, we investigate the picosecond acoustic response from a prototypical phase change material, thin Ge2Sb2Te5 (GST) films with various thicknesses. After excitation with a 1.53 eV-energy pulse with a fluence of ≈5 mJ cm(-2), the time-resolved reflectivity change exhibits transient electronic response, followed by a combination of exponential-like strain and coherent acoustic phonons in the gigahertz (GHz) frequency range. The time-domain shape of the coherent acoustic pulse is well reproduced by the use of the strain model by Thomsen et al 1986 (Phys. Rev. B 34 4129). We found that the decay rate (the inverse of the relaxation time) of the acoustic phonon both in the amorphous and in the crystalline phases decreases as the film thickness increases. The thickness dependence of the acoustic phonon decay is well modeled based on both phonon-defect scattering and acoustic phonon attenuation at the GST/Si interface, and it is revealed that those scattering and attenuation are larger in crystalline GST films than those in amorphous GST films.

Multicomponent chalcogenides, such as quasi-binary GeTe-Sb2Te3 alloys, are widely used in optical data storage media in the form of rewritable optical discs. Ge2Sb2Te5 (GST) in particular has proven to be one of the best-performing materials, whose reliability allows more than 10(6) write-erase cycles. Despite these industrial applications, the fundamental kinetics of rapid phase change in GST remain controversial, and active debate continues over the ultimate speed limit. Here we explore ultrafast structural transformation in a photoexcited GST superlattice, where GeTe and Sb2Te3 are spatially separated, using coherent phonon spectroscopy with pump-pump-probe sequences. By analysing the coherent phonon spectra in different time regions, complex structural dynamics upon excitation are observed in the GST superlattice (but not in GST alloys), which can be described as the mixing of Ge sites from two different coordination environments. Our results suggest the possible applicability of GST superlattices for ultrafast switching devices.

Phase-change memories (PCM) are associated with reversible ultra-fast low-energy crystal-to-amorphous switching in GeTe-based alloys co-existing with the high stability of the two phases at ambient temperature, a unique property that has been recently explained by the high fragility of the glass-forming liquid phase, where the activation barrier for crystallisation drastically increases as the temperature decreases from the glass-transition to room temperature. At the same time the atomistic dynamics of the phase-change process and the associated changes in the nature of bonding have remained unknown. In this work we demonstrate that key to this behavior is the formation of transient three-center bonds in the excited state that is enabled due to the presence of lone-pair electrons. Our findings additionally reveal previously ignored fundamental similarities between the mechanisms of reversible photoinduced structural changes in chalcogenide glasses and phase-change alloys and offer new insights into the development of efficient PCM materials.

A mathematical model of tumor growth is developed taking into account angiogenesis. Malignant cells under metabolic stress produce vascular endothelium growth factor that stimulates angiogenesis, increasing nutrient influx in tumor. The model takes into account the migration and proliferation dichotomy in the malignant cells depending on nutrient concentration. Convective fluxes originated due to active tumor cell proliferation in compact dense tissue are also considered. The computational analysis of the model has demonstrated that diffusive tumor growth rate does not depend on angiogenesis while for non-invasive tumors angiogenesis can significantly alter tumor growth, although it is not able to stop it completely. The causes and significance of the result for estimation of the antitumor efficacy of antiangiogenic therapy are discussed.

Multiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d -electrons of transition metals. Here we report that in [(GeTe) 2 (Sb 2 Te 3 ) l ] m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p -electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory.

Pb(x)Sn(1-x)Te and Pb(x)Sn(1-x)Se crystals belong to the class of topological crystalline insulators where topological protection is achieved due to crystal symmetry rather than time-reversal symmetry. In this work, we make use of selection rules in the x-ray absorption process to experimentally detect band inversion along the PbTe(Se)-SnTe(Se) tie-lines. The observed significant change in the ratio of intensities of L1 and L3 transitions along the tie-line demonstrates that x-ray absorption can be a useful tool to study band inversion in topological insulators.

Interfacial phase change memory (iPCM), that has a structure of a superlattice made of alternating atomically thin GeTe and Sb2Te3 layers, has recently attracted attention not only due to its superior performance compared to the alloy of the same average composition in terms of energy consumption but also due to its strong response to an external magnetic field (giant magnetoresistance) that has been speculated to arise from switching between topological insulator (RESET) and normal insulator (SET) phases. Here we report magneto-optical Kerr rotation loops in the visible range, that have mirror symmetric resonances with respect to the magnetic field polarity at temperatures above 380 K when the material is in the SET phase that has Kramers-pairs in spin-split bands. We further found that this threshold temperature may be controlled if the sample was cooled in a magnetic field. The observed results open new possibilities for use of iPCM beyond phase-change memory applications.

The paper presents the results of investigating the mechanisms of placental insufficiency and transplacental infection of infants born to HIV-infected mothers who have received specific antiretroviral therapy mothers and who have not.

Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decreases the resistivity by three orders of magnitude, and also increases reflectivity across the visible spectrum. Moreover, phase-change memory based on GST is scalable, and is therefore a candidate to replace Flash memory for non-volatile data storage applications. The energy needed to switch between the two phases depends on the intrinsic properties of the phase-change material and the device architecture; this energy is usually supplied by laser or electrical pulses. The switching energy for GST can be reduced by limiting the movement of the atoms to a single dimension, thus substantially reducing the entropic losses associated with the phase-change process. In particular, aligning the c-axis of a hexagonal Sb(2)Te(3) layer and the 〈111〉 direction of a cubic GeTe layer in a superlattice structure creates a material in which Ge atoms can switch between octahedral sites and lower-coordination sites at the interface of the superlattice layers. Here we demonstrate GeTe/Sb(2)Te(3) interfacial phase-change memory (IPCM) data storage devices with reduced switching energies, improved write-erase cycle lifetimes and faster switching speeds.

The expression of TSP-1 gene mRNA and TSP-1 protein in the placental tissue was studied during normal pregnancy and in gestosis. The formation of placental tissue in normal gestation was associated with expression of TSP-1 gene mRNA and of TSP-1 protein. Gestosis was associated with inflammatory reaction in the placenta characterized by increased counts of lymphocytes and macrophages in the villous stroma and involution degenerative changes in tissue. Disorders in placental villi maturation and branching in gestosis were paralleled by hyperexpression of TSP-1 gene mRNA by placental cells and hyperexpression of TSP-1 protein predominating in the stromal elements of terminal villi and near villous vessels.

An amorphous-to-crystal transition in phase-change materials like Ge-Sb-Te is widely used for data storage. The basic principle is to take advantage of the property contrast between the crystalline and amorphous states to encode information; amorphization is believed to be caused by melting the materials with an intense laser or electrical pulse and subsequently quenching the melt. Here, we demonstrate that distortions in the crystalline phase may trigger a collapse of long-range order, generating the amorphous phase without going through the liquid state. We further show that the principal change in optical properties occurs during the distortion of the still crystalline structure, upsetting yet another commonly held belief that attributes the change in properties to the loss of long-range order. Furthermore, our results suggest a way to lower energy consumption by condensing phase change inducing energy into shorter pulses or through the use of coherent phonon excitation.

The limit to which the phase change memory material Ge(2)Sb(2)Te(5) can be scaled toward the smallest possible memory cell is investigated using structural and optical methodologies. The encapsulation material surrounding the Ge(2)Sb(2)Te(5) has an increasingly dominant effect on the material's ability to change phase, and a profound increase in the crystallization temperature is observed when the Ge(2)Sb(2)Te(5) layer is less than 6 nm thick. We have found that the increased crystallization temperature originates from compressive stress exerted from the encapsulation material. By minimizing the stress, we have maintained the bulk crystallization temperature in Ge(2)Sb(2)Te(5) films just 2 nm thick.

The localization of apoptosis and expression of proapoptotic and antiapoptotic factors by the placental tissue were compared during normal pregnancy and gestosis-complicated pregnancy. The degree of apoptosis did not differ in the third trimester of normal pregnancy and gestosis-complicated pregnancy. Increased expression of Fas, caspase-8, and caspase-3 in placental tissue during normal pregnancy was shown to contribute to the suppression of angiogenesis and growth of placental tissue. No differences were found in the expression of FasL (CD95L), caspase-2, caspase-9, and Mcl-1 by placental cells during normal pregnancy and gestosis-complicated pregnancy. Increased expression of TRAIL by trophoblast cells is a protective mechanism from apoptotic signals of maternal cytotoxic lymphocytes and NK cells during gestosis.

We demonstrate that while the metastable face-centered cubic (fcc) phase of Ge2Sb2Te5 becomes amorphous under hydrostatic compression at about 15 GPa, the stable trigonal phase remains crystalline. Upon higher compression, a body-centered cubic phase is obtained in both cases around 30 GPa. Upon decompression, the amorphous phase is retained for the starting fcc phase while the initial structure is recovered for the starting trigonal phase. We argue that the presence of vacancies and associated subsequent large atomic displacements lead to nanoscale phase separation and loss of initial structure memory in the fcc staring phase of Ge2Sb2Te5.

A mathematical model for the invasive tumour growth has been constructed, which takes cell division, death, and motility into account. The model includes local cell density and the distribution of nutrient (oxygen) concentration. Cancer cells die in the absence of nutrients; therefore, the distribution of oxygen in tissue substantially affects both the tumour proliferation rate and structure. The model adequately describes the experimentally measured rate of tumour proliferation. The existence of autowave solutions has been demonstrated, and their properties have been investigated. The results are compared with the properties of the Kolmogorov-Petrovskii-Piskunov and Fisher equations. It is shown that the nutrient distribution influences the speed selection and the convergence of the initial conditions to the automodel solution.

Aim: To analyze the growth kinetics and proliferative heterogeneity of Lewis lung carcinoma (LLC) cells during their growth in monolayer for 5 days without replacement of culture medium (unfed culture)., Methods: Cell biology methods, sandwich enzyme-linked immunosorbent assay for vascular endothelial growth factor (VEGF) detection (ELISA), enzymatic glucose-oxidase method for glucose measurements, mathematical modeling., Results: Created mathematical model showed good fit to experimental data; that allowed to determine kinetic (model) parameters of LLC cells and predict the changes in number of proliferating and quiescent cells (proliferative heterogeneity) during their growth. It was shown that growth kinetics of viable LLC cells possesses non-monotonous character - during first three days of growth the number of cells raised exponentially, with following decrease after the maximal level was achieved. At the same time the decrease of number of viable cells/increase of number of dead cells has been observed upon complete depletion of culture medium by glucose content. Glucose dependence of cell transition rate from proliferation to resting state predicted by mathematical model possessed a pronounced two-phase character. At a wide range of relatively high glucose concentrations (> 1.0 mg/ml) the transition rate was close to zero. At concentrations lower than 0.7 mg/ml, the rate of transition swiftly increased resulting in sharp change in cellular composition. At an interval from 70 to 90 h, practically all proliferating cells transited to a resting state. The rate of quiescent cell death was relatively low, and this was in part caused by too low level of glucose consumption compared to proliferating cells. It was shown that during LLC cells growth VEGF production rate decreased monotonously in spite of the fact that the level of VEGF in incubation medium increased monotonously. Observed monotonous decrease of VEGF production rate could not be explained by VEGF degradation in incubation medium (our results displayed the stability of VEGF molecule during investigations)., Conclusions: Weak dependence of cell transition rate from proliferating to resting state from glucose level (> 0.7 mg/ml) and low rate of cell death provided slow decrease of the pool of quiescent cells in the population, thus significantly increasing their chance to survive upon nutritional deficiency.

We carried out a comparative analysis of changes in VEGF secretion and expression of VEGF-R3 receptor by placental endothelial cells in health and gestosis and of changes in VEGF-R3 expression by EA.hy926 human endothelial cells during culturing with supernatants conditioned by placental explants from women with normal pregnancy and patients with gestosis. Reduced secretion of VEGF and expression of VEGF-R3 by placental endothelial cells in gestosis can be caused by functional deficiency of the endothelial cells and low viability of endothelial cells.

We demonstrate that , the material of choice in phase-change optical recording (such as DVD-RAM), can be rendered amorphous by the application of hydrostatic pressure. It is argued that this structural change is due to a very strong second-nearest-neighbor Te-Te interaction that determines the long-range order in the metastable cubic phase of and also to the presence of vacancies. This newly discovered phenomenon suggests that pressure is an important factor for the formation of the amorphous phase which opens new insight into the mechanism of phase-change optical recording.

ZnO is a wide band gap, naturally n-type semiconductor with great promise for optoelectronic applications; the main obstacle yet to be overcome is p-type doping. Nitrogen, the most promising candidate currently being pursued as a dopant, has been predicted to preferentially incorporate into the ZnO lattice in the form of a N-2 molecule at an O site when a plasma source is used, leading to compensation rather than p-type doping. We demonstrate this to be incorrect by using N K-edge x-ray absorption spectra and comparing them with first-principles calculations showing that nitrogen, in fact, incorporates substitutionally at O sites where it is expected to act as an acceptor. We also detect the formation of molecular nitrogen upon annealing. These results suggest that effective p-type doping of ZnO with N may be possible only for low-temperature growth processes.