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Your search keyword '"Kolodinski, S."' showing total 22 results
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22 results on '"Kolodinski, S."'

1. Energy Harvesting in the Back-End of Line with CMOS Compatible Ferroelectric Hafnium Oxide

Author

Mart, C., primary, Abdulazhanov, S., additional, Czernohorsky, M., additional, Kampfe, T., additional, Lehninger, D., additional, Falidas, K., additional, Eslinger, S., additional, Kuhnel, K., additional, Oehler, S., additional, Rudolph, M., additional, Wiatr, M., additional, Kolodinski, S., additional, Seidel, R., additional, Weinreich, W., additional, and Eng, L. M., additional

Published
2020
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2. The electrocaloric effect in doped hafnium oxide: Comparison of direct and indirect measurements

Author

Mart, C., Kämpfe, T., Czernohorsky, M., Eßlinger, S., Kolodinski, S., Wiatr, M., Weinreich, W., Eng, L.M., and Publica

Abstract

The accurate determination of electrocaloric coefficients in nanometer-thin, polycrystalline doped HfO2 is challenging and has led to very different values reported in the literature. Here, we apply two different methods in order to compare and analyze reversible and irreversible or metastable contributions to the electrocaloric effect. The indirect method is based on temperature-dependent ferroelectric hysteresis characteristics. Furthermore, we apply a direct method, where electrocaloric temperature variations are observed using a specialized test structure. A comparison of both methods reveals that the indirect method dramatically overestimates the response due to thermal fatigue effects, which are caused by the migration of charged defects to the electrode interfaces. The partial transition to the antiferroelectric-like tetragonal phase is not immediately reversed to the polar Pca21 phase upon cooling. An electrocaloric coefficient of −107 mC m−2 K−1 is determined for a 20 nm thick Si-doped HfO2 film with the direct method, which corresponds to a DT of 4.4 K.

Published
2020

4. IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF

Author

Kolodinski, S., primary, Mart, C., additional, Weinreich, W., additional, Sessi, V., additional, Trommer, J., additional, Chohan, T., additional, Mulaosmanovic, H., additional, Weber, W. M., additional, Slesazeck, S., additional, Peng, B., additional, Esposito, C., additional, Zimmermann, Y., additional, Schroter, M., additional, Xu, X., additional, Testa, P. V., additional, Carta, C., additional, Ellinger, F., additional, Lehmann, S., additional, Drescher, M., additional, and Wiatr, M., additional

Published
2019
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8. Impact of field cycling on HfO2 based non-volatile memory devices

Author

Schroeder, U., primary, Pesic, M., additional, Schenk, T., additional, Mulaosmanovic, H., additional, Slesazeck, S., additional, Ocker, J., additional, Richter, C., additional, Yurchuk, E., additional, Khullar, K., additional, Muller, J., additional, Polakowski, P., additional, Grimley, E. D., additional, LeBeau, J. M., additional, Flachowsky, S., additional, Jansen, S., additional, Kolodinski, S., additional, van Bentum, R., additional, Kersch, A., additional, Kunneth, C., additional, and Mikolajick, T., additional

Published
2016
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9. Theoretical investigation of CoSi2/Si1-xGex detectors: Influence of a Si tunneling barrier on the electro-optical characteristics.

Author

Chu, D. P., Peeters, F. M., Kolodinski, S., and Roca, E.

Subjects
ELECTRONS, SILICON, DIODES
Abstract

Presents a theoretical investigation of the influence of a non-reacted silicon layer on the transport and optical properties CoSi[sub2]/Si[1-x]Ge[subx] Schottky barrier diodes grown from Co/Si/Si[sub1-x]Ge[subx] systems. Schottky barrier potential profile for holes; Schematic energy band diagram for the electrons in CoSi[sub2]/Si/Si[sub1-x]Ge[subx] structure; Details on photoresponse, an important property of a photodetector.

Published
1996
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10. Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells

Author

Mulaosmanovic, H., primary, Slesazeck, S., additional, Ocker, J., additional, Pesic, M., additional, Muller, S., additional, Flachowsky, S., additional, Muller, J., additional, Polakowski, P., additional, Paul, J., additional, Jansen, S., additional, Kolodinski, S., additional, Richter, C., additional, Piontek, S., additional, Schenk, T., additional, Kersch, A., additional, Kunneth, C., additional, van Bentum, R., additional, Schroder, U., additional, and Mikolajick, T., additional

Published
2015
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11. Cool silicon ICT energy efficiency enhancements

Author

Ellinger, F., primary, Mikolajik, T., additional, Fettweis, G., additional, Hentschel, D., additional, Kolodinski, S., additional, Warnecke, H., additional, Reppe, T., additional, Tzschoppe, C., additional, Dohl, J., additional, Carta, C., additional, Fritsche, D., additional, Wiatr, M., additional, Kronholz, S.D., additional, Mikalo, R.P., additional, Heinrich, H., additional, Paulo, R., additional, Wolf, R., additional, Hubner, J., additional, Waltsgott, J., additional, Meissner, K., additional, Richter, R., additional, Bausinger, M., additional, Mehlich, H., additional, Hahmann, M., additional, Moller, H., additional, Wiemer, M., additional, Holland, H.-J., additional, Gartner, R., additional, Schubert, S., additional, Richter, A., additional, Strobel, A., additional, Fehske, A., additional, Cech, S., additional, Assmann, U., additional, Hoppner, S., additional, Walter, D., additional, Eisenreich, H., additional, and Schuffny, R., additional

Published
2012
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20. Potential of Si1-xGex alloys for Auger generation in highly efficient solar cells

Author

Kolodinski, S., Werner, J. H., and Queisser, H.-J.

Abstract

Recent investigation on Si solar cells demonstrated the utility of Auger generation for the creation of more than merely one electron/hole pair per absorbed photon. The semiconductor Si requires a minimum photon energy of about 3.4 eV for this internal carrier multiplication. The current of a Si cell is therefore not significantly increased by Auger generation when the cell is illuminated by an air mass 1.5 spectrum, which contains only few photons with energies above 3.4 eV. Use of Si 1- xGe x alloys promises a lower onset energy. Unfortunately, incomplete data on band structures of random Si 1- xGe x alloys preclude a detailed quantitative discussion of the full potential for these materials. Nevertheless, ( i) analogies to our own quantum efficiency data from pure Si, ( ii) the calculated band structure of the hypothetical, ordered zincblende type Si 0.5Ge 0.5 crystal, and ( iii) optical data for Si 1- xGe x alloys indicate an optimum Ge content of x=0.6 to x=0.7.

Published
1995
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