105 results on '"Kong, Moufu"'
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2. New Electronic Devices for Power Converters
3. Modeling and simulation of an insulated-gate HEMT using p-SnO2 gate for high VTH design
4. Ultra-wide bandgap semiconductor Ga2O3 power diodes
5. Fabricating and TCAD Optimization for a SiC Trench MOSFET With Tilted P-Shielding Implantation and Integrated TJBS
6. A Novel 1200-V Class SiC MOSFET With Schottky Barrier Diode for Improved third quadrant performance
7. A Novel Semi-superjunction SiC Trench MOSFET with Ultra-low Specific On-resistance
8. An Ultra-low Specific On-resistance SiC LDMOS Using Double RESURF and Field Plate Techniques
9. SiC-Based High-Temperature Gate Driver Integrated Circuit for SiC Power MOSFET
10. A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability
11. Analytical model and simulation study of a novel enhancement-mode Ga2O3 MISFET realized by p-GaN gate
12. A dual channel three-terminal np-LDMOS with both majorities for conduction
13. A Sidewall Enhanced Trench Poly-Si/SiC Heterojunction Diode with Energy Barrier Height Control Technology
14. A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance
15. A Novel GaN Superjunction FinFET Power Device With a P-Type NiO Pillar for Improved Performance
16. A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability
17. Investigation of a Novel Enhancement-Mode Al$_{\text{0}.\text{25}}$Ga$_{\text{0}.\text{75}}$N/AlN/Al$_{\textit{x}}$Ga$_{\text{(\text{1}$-$}\textit{x}\text{)}}$N/GaN MIS-HEMT for High $\textit{V}_{\text{th}}$ and Low $\textit{R}_{\text{on,\text{sp}}}$
18. A Double Trench SiC Power MOSFET with Integrated Freewheeling Heterojunction Diode for Improved Third Quadrant Performance
19. A Novel Heterotype SiC Superjunction MOSFET With Improved Both Forward and Reverse Performance
20. A Novel Ga2O3 Superjunction LDMOS Using P-Type Diamond with Improved Performance
21. A novel optimum variation lateral doping SiC lateral double-diffused metal oxide semiconductor with improved performance
22. A SiC sidewall enhanced trench JBS diode with improved forward performance
23. A 1200-V-Class Ultra-Low Specific On-Resistance SiC Lateral MOSFET With Double Trench Gate and VLD Technique
24. A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for Improved Performance
25. A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron,sp
26. A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances
27. A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics
28. A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss
29. An Ultralow On-Specific Resistance Trench MOSFET With Multiple Stepped Accumulation Layer for Conduction
30. Simulation Comparative Study on Ga2O3 and SiC Schottky Diodes
31. SiC Trench MOSFET Merged Schottky Barrier Diode for Enhanced Reverse Recovery Performance
32. Investigation of a Novel Enhancement-Mode Al0.25Ga0.75N/AlN/AlXGa(1-X)N/GaN MIS-HEMT for High Vth and Low Ron,sp
33. Ultra-wide bandgap semiconductor Ga2O3 power diodes.
34. Novel CMOS Positive and Negative Voltage Mutual Conversion Circuits and Regulators
35. A Novel SOI-LIGBT With Short-Circuit and Over-Current Self-Protection
36. A Novel No Miller Plateau SOI-LIGBT With Low Saturation Current and Improved Switching Performance
37. A Novel Double-RESURF SOI-LIGBT With Improved $V_{\mathrm{\scriptscriptstyle ON}}-{E}_{ \mathrm{\scriptscriptstyle OFF}}$ Tradeoff and Low Saturation Current
38. A Novel Diode-Clamped Carrier Stored Trench IGBT With Improved Performances
39. Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer
40. A Novel Low on-State Voltage SOI LIGBT With Enhanced Conductivity Modulation
41. A Novel Low Channel Resistance LDMOS with Planar and Trench Gates
42. Simulation study of a novel thin layer SOI carrier-stored TLIGBT with self-biased pMOS
43. Simulation Study of Trench IGBT with Diode-Clamped P-Well for High dI/dt and dV/dt Controllability
44. A Novel Low Turn-Off Loss and Snapback-Free Reverse-Conducting SOI-LIGBT With Integrated Polysilicon Diodes
45. Simulation Study on Novel High Voltage Transient Voltage Suppression Diodes
46. A Low On-state Voltage and Large Current Capability Thin SOI-LIGBT with Trench NMOS
47. Simulation study on a novel snapback-free and low turn-off loss reverse-conducting SOI-LIGBT with P-type double trench gates on the anode region
48. An Ultra-Low On-Resistance Triple RESURF Tri-Gate LDMOS Power Device
49. A Positive Low-Voltage Power Supply Integrated With High-Voltage Devices
50. A High Speed High Voltage Normally-off SiC Vertical JFET Power Device
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