41 results on '"Kong, Qiwen"'
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2. A Novel Non-Volatile Inverter-based CiM: Continuous Sign Weight Transition and Low Power on-Chip Training
3. Computational Associative Memory with Amorphous InGaZnO Channel 3D NAND-Compatible FG Transistors
4. Investigation of iron oxide supported on activated coke for catalytic reduction of sulfur dioxide by carbon monoxide
5. Powder activated coke prepared from coal fast pyrolysis: fractal characteristics and SO2 adsorption
6. Ferroelectric capacitive memories: devices, arrays, and applications.
7. Advancing the Understanding of Reliability in BEOL-Compatible Oxide Semiconductor Transistors: The Impact of AC PBTI
8. Effects of Source/Drain Electrodes on Thermal Stability of IGZO FETs in the Oxygen-Deficient Environment
9. Understanding Bias Stress-Induced Instabilities in ALD-Deposited ZnO FeFETs Featuring HZO-Al2O3-HZO Ferroelectric Stack
10. Hydrogen-Related Instability of IGZO Field-Effect Transistors
11. First BEOL-compatible IGZO Ferroelectic-Modulated Diode with Drastically Enhanced Memory Window: Experiment, Modeling, and Deep Understanding
12. Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices
13. First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory
14. Thin film ferroelectric photonic-electronic memory
15. First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs
16. First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices
17. Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F2 High-Density Integration
18. Hybrid and heterogeneous photonic integrated near-infrared InGaAs/InAlAs single-photon avalanche diode
19. Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical Understanding
20. Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors
21. New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling
22. Novel a-IGZO Anti-Ferroelectric FET LIF Neuron with Co-Integrated Ferroelectric FET Synapse for Spiking Neural Networks
23. Deep insights into the Interplay of Polarization Switching, Charge Trapping, and Soft Breakdown in Metal-Ferroelectric-Metal-Insulator-Semiconductor Structure: Experiment and Modeling
24. First Demonstration of BEOL-Compatible 3D Fin-Gate Oxide Semiconductor Fe-FETs
25. Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors (Adv. Electron. Mater. 12/2022)
26. BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs—Part I: Experimental Results With Boosted Memory Window
27. Beol-Compatible Ingazno-Based Devices for 3D Integrated Circuits
28. BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application
29. Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory
30. Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection
31. Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V)
32. First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform
33. First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit
34. Powder-Activated Coke Prepared from Coal Fast Pyrolysis: Fractal Characteristics and SO2 Adsorption
35. Understanding Positive Bias Stability of a-InGaZnO Thin Film Transistors with HfO2 Gate Dielectric using Fast Measurement Techniques
36. Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics
37. Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors
38. Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure
39. Powder activated coke prepared from coal fast pyrolysis: fractal characteristics and SO2 adsorption.
40. First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 nm Detection
41. Surface Ga-Boosted Boron-Doped Si0.5 Ge0.5 using In-Situ CVD Epitaxy: Achieving 1.1 × 1021 cm−3 Active Doping Concentration and 5.7× 10−10 Ω-cm2 Contact Resistivity
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