42 results on '"Konishi, Keita"'
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2. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging
3. Experimental determination of critical thickness limitations of (010)β -(AlxGa1−x)2O3 heteroepitaxial films
4. Halide Vapor Phase Epitaxy 1
5. Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
6. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging.
7. Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films.
8. AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices
9. Transport characteristics of a single-layer graphene field-effect transistor grown on 4H-silicon carbide
10. Fabrication of Graphene Network via Nanoimprint Lithography
11. Vertical Ga2O3 Schottky barrier diodes with guard ring formed by nitrogen-ion implantation
12. Dependence of thermal stability of GaN on substrate orientation and off-cut
13. Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation
14. Dependence of thermal stability of GaN on substrate orientation and off-cut
15. Growth of Single Crystalline c-In2O3(111) Layers on Off-Axis c-Plane Sapphire Substrates by Halide Vapor Phase Epitaxy
16. Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface
17. Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties
18. Latest progress in gallium-oxide electronic devices
19. Recent advances in Ga2O3 MOSFET technologies
20. Halide vapor phase epitaxy of Si doped beta-Ga2O3 and its electrical properties
21. Comparison of O-2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy
22. Ultra-Wide-Bandgap Ga2O3 Material and Electronic Device Technologies
23. Recent Advances in Ga2O3 MOSFET Technologies
24. Latest progress in gallium-oxide electronic devices
25. Preparation of 2-in.-diameter (001) β-Ga2O3homoepitaxial wafers by halide vapor phase epitaxy
26. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes
27. Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface.
28. Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n(-)-Ga2O3 drift layers grown by halide vapor phase epitaxy
29. Ga2O3 field-plated schottky barrier diodes with a breakdown voltage of over 1 kV
30. Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy
31. Large conduction band offset at SiO2 /β-Ga2 O3 heterojunction determined by X-ray photoelectron spectroscopy
32. Study of gripping operation of a blanket module using a compact robot simulator
33. Characterizing the electron transport properties of a single 〈110〉 InAs nanowire
34. Electrical spin injection from ferromagnet into an InAs quantum well through a MgO tunnel barrier
35. Latest progress in gallium-oxide electronic devices
36. Spin-injection into epitaxial graphene on silicon carbide
37. Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n-–Ga2O3 drift layers grown by halide vapor phase epitaxy
38. Fabrication of p–n–p Graphene Structure and Observation of Current Oscillation
39. Proposal of Graphene Bandgap Control by Hexagonal Network Formation
40. Fabrication of Graphene Network via Nanoimprint Lithography.
41. Large conduction band offset at SiO2/β-Ga2O3 heterojunction determined by X-ray photoelectron spectroscopy.
42. Preparation of 2-in.-diameter (001) ?-Ga2O3 homoepitaxial wafers by halide vapor phase epitaxy
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