760 results on '"Kop’ev, P. S."'
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2. High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss
3. Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents
4. High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design
5. Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review)
6. Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide
7. Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide
8. Retraction: Nature of optical transitions in self-organized InAs/GaAs quantum dots [Phys. Rev. B 53 , 10509(R) (1996)]
9. Electroluminescence in Heterostructures GaSb/AlSb/InAsSb Due to Tunneling Mechanism of Radiative Recombination
10. Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN
11. Mie-resonances, infrared emission and band gap of InN
12. Type-II (AIGa)Sb/InAs Quantum Well Structures and Superlattices for Opto and Microelectronics Grown by Molecular Beam Epitaxy
13. Heteronanostructure Semiconductor Lasers for Wireless Power Transmission
14. Resonance energy transfer in a dense array of II–VI quantum dots
15. Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al2O3 by using flux- and temperature-modulated techniques
16. Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping
17. Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites
18. Large blue shift of electroluminescence spectrum in nanoheterostructures with a deep AlSb/InAsSb/AlSb quantum well.
19. Optical Switches and Modulators for Integrated Optoelectronic Systems
20. Modelling Quantum Well Laser Diode Structures
21. MBE Growth of (In,Ga)As Self-Assembled Quantum Dots for Optoeletronic Applications
22. Hot-Electron Diffusion and Velocity Fluctuations in Quantum Well Structures
23. Hot Photoluminescence and Electron-Phonon Interaction in GaAs/AIAs MQW Structures
24. Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures
25. Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel
26. Geminate Recombination in MQW Structures in a Magnetic Field
27. Photoluminescence of Hot Electrons and Scattering Processes in Quantum-Well Structures
28. Laser and Optical Properties of Green-Emitting ZnCdSe Quantum Dot Based Heterostructures
29. Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges
30. AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide
31. Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures
32. Influence of nonlinear effects on destruction of active elements of electron-beam-pumped lasers Based on ZnSe-containing quantum-size structures
33. Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells
34. Plasmonic amplification of single exciton transitions in InGaN
35. Pulsed heating of active elements of low-threshold electron-beam-pumped green lasers based on nanostructures of II–VI compounds
36. Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K)
37. An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures
38. AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy
39. Electric-field control of the occupancy of the upper laser subband in quantum-well structures with asymmetric barriers designed for unipolar laser operation
40. InSb/InAsSb nanostructures for Mid-IR optoelectronics
41. Specific features of transmutational doping of 30Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance
42. Neutron transmutation doping of silicon 30Si monoisotope with phosphorus
43. Probing of the shallow donor and acceptor wave functions in silicon carbide and silicon through an EPR study of crystals with a modified isotopic composition
44. Lasing in Cd(Zn)Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers
45. Effect of the spin-orbit interaction on the cyclotron resonance of two-dimensional electrons
46. Peculiarities of electron spectrum rearrangement for the double-well heterostructure GaAs/AlGaAs with a variable dimensionality of electronic states in an external electric field
47. A scanning pulse-periodic laser based on heterostructures containing ZnSe with electron beam pumping
48. Excitonic recombination near the mobility edge in CdSe/ZnSe nanostructures
49. Laser and Optical Properties of Green-Emitting ZnCdSe Quantum Dot Based Heterostructures
50. Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy
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