93 results on '"Kopanski, J. J."'
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2. Semiconductor Dopant Profile and Dielectric Characterization with Scanning Capacitance Microscopy
3. Charge Trapping in Cubic Silicon Carbide MIS Capacitors
4. Real-Time Pseudodielectric Function of Low-Temperature-Grown GaAs
5. MIS capacitor studies on silicon carbide single crystals
6. Calibrated nanoscale dopant profiling using a scanning microwave microscope.
7. Factors influencing the capacitance–voltage characteristics measured by the scanning capacitance microscope.
8. Regression procedure for determining the dopant profile in semiconductors from scanning capacitance microscopy data.
9. Broadband Spectroscopic Characterization of Hybrid Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications
10. Improved characterization and evaluation measurements for HgCdTe detector materials, processes, and devices used on the GOES and TIROS satelites
11. MIS capacitor studies on silicon carbide single crystals
12. (Invited) Characterization of Buried Interfaces with Scanning Probe Microscopes
13. Dielectric Spectroscopic Detection of Early Failures in 3-D Integrated Circuits
14. A new interface defect spectroscopy method
15. Band alignment issues in metal/dielectric stacks: a combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems
16. Behavior of ion-implanted junction diodes in 3C SiC.
17. Scanning Capacitance Microscopy for Electrical Characterization of Semiconductors and Dielectrics
18. (Invited) Microwave-Based Metrology Platform Development: Application of Broad-Band RF Metrology to Integrated Circuit Reliability Analyses
19. Measurement Science for "More-Than-Moore" Technology Reliability Assessments
20. Calibration techniques for scanning microwave microscopy
21. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
22. A new interface defect spectroscopy method
23. Behavior of inversion layers in 3C silicon carbide
24. Thermal oxidation of 3C silicon carbide single-crystal layers on silicon
25. Surface Grafting of Polypyrrole onto Silicon Wafers
26. Scanning Kelvin Force Microscopy For Characterizing Nanostructures in Atmosphere
27. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
28. Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p‐n junction dopant profiling
29. Towards reproducible scanning capacitance microscope image interpretation
30. PSPICE analysis of a scanning capacitance microscope sensor
31. On calculating scanning capacitance microscopy data for a dopant profile in semiconductors
32. Quantitative Interpretation of Scanning Capacitance Microscope Images as Two-Dimensional Dopant Profiles
33. Atomic force microscope laser illumination effects on a sample and its application for transient spectroscopy
34. Scanning Capacitance Microscopy for Electrical Characterization of Semiconductors and Dielectrics.
35. Comparison of experimental and theoretical scanning capacitance microscope signals and their impact on the accuracy of determined two-dimensional carrier profiles
36. FASTC2D: Software for extracting 2D carrier profiles from scanning capacitance microscopy images.
37. Carrier concentration dependence of the scanning capacitance microscopy signal in the vicinity of p–n junctions
38. Limitations of the calibration curve method for determining dopant profiles from scanning capacitance microscope measurements
39. Development and characterization of insulating layers on silicon carbide
40. Intermittent-contact scanning capacitance microscope for lithographic overlay measurement
41. Intermittent-contact scanning capacitance microscopy imaging and modeling for overlay metrology
42. Scanning capacitance microscopy measurement of two-dimensional dopant profiles across junctions
43. Comparison of measured and modeled scanning capacitance microscopy images across p-n junctions
44. Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon
45. Intermittent-contact scanning capacitance microscopy imaging and modeling for overlay metrology.
46. Comparison of measured and modeled scanning capacitance microscopy images across p-n junctions.
47. Review of semiconductor microelectronic test structures with applications to infrared detector materials and processes
48. Verification of the Relation Between Two‐Probe and Four‐Probe Resistances as Measured on Silicon Wafers
49. Model database for determining dopant profiles from scanning capacitance microscope measurements.
50. Characterization of two-dimensional dopant profiles: Status and review.
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