117 results on '"Kordina, Olof"'
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2. Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions
3. Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
4. Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
5. Epitaxial growth of β-Ga2O3 by hot-wall MOCVD.
6. Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors
7. N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality
8. Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors
9. Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy.
10. Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer
11. Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC.
12. Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3
13. Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
14. Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species
15. Erratum: “A GaN–SiC hybrid material for high-frequency and power electronics” [Appl. Phys. Lett. 113, 041605 (2018)]
16. A GaN–SiC hybrid material for high-frequency and power electronics
17. Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers
18. Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species
19. Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide
20. Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3
21. Vector Magnetometry Using Silicon Vacancies in4H-SiC Under Ambient Conditions
22. Carbon-Doped GaN on SiC Materials for Low-Memory-Effect Devices
23. Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy
24. Thermochemical Properties of Halides and Halohydrides of Silicon and Carbon
25. Optical properties and Zeeman spectroscopy of niobium in silicon carbide
26. Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC
27. Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates
28. Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
29. Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements
30. Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth
31. Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers
32. Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC
33. Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC
34. CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
35. Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
36. Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies
37. Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions
38. Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
39. SiC epitaxy growth using chloride-based CVD
40. Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide
41. CVD Growth of 3C-SiC on 4H-SiC Substrate
42. Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications
43. Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
44. Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates
45. High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors
46. Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC
47. Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
48. Concentrated Chloride-Based Epitaxial Growth of 4H-SiC
49. Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers
50. Chloride-based CVD of 3C-SiC Epitaxial Layers on On-axis 6H (0001) SiC Substrates
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