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Your search keyword '"Kotomina, V. E."' showing total 21 results
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21 results on '"Kotomina, V. E."'

6. Thermally initiated disproportionation of manganese(II) bis(1-hydroxyethylidene)diphosphonate. Formation and properties of the lepidoid structure of manganese(II) (1-hydroxyethylidene)diphosphonate-2-hydroxyethaneaminium whiskers. Agronomical efficiency of the manganese(II) complex with (1-hydroxyethylidene)diphosphonic acid

Author

Semenov, V. V., Zolotareva, N. V., Petrov, B. I., Novikova, O. V., Kulikova, T. I., Razov, E. N., Kruglov, A. V., Kotomina, V. E., Geiger, E. Yu., Varlamova, L. D., Titova, V. I., Korchenkina, N. A., and Sakov, A. P.

Published
2018
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7. Recent results of new additive technology CMPS of manufacturing elements of vacuum electronic devices.

Author

Proyavin, M. D., Morozkin, M. V., Kotomina, V. E., Zaslavsky, V. Y., Peskov, N. Y., Sobolev, D. I., and Palitsin, A. V.

Subjects
3-D printers, THREE-dimensional printing, VACUUM technology, METAL products, STEREOLITHOGRAPHY, PROBLEM solving, NUMERICAL control of machine tools, ELECTRONIC equipment
Abstract

The development of vacuum electronics is strongly correlated to advances in manufacturing technologies. The complexity of many modern prototypes of vacuum electron devices does not allow or greatly complicates their realization, and many ideas still remain theoretical. Modern 3D printing technologies can partially solve this problem, since, in comparison with modern CNC machines, they have great capabilities in accuracy, productivity and cost. However, this only applies to dielectric products, since metal 3D printers are currently significantly inferior to CNC machines in all respects. Therefore, special methods are required to realize metal products. In this paper, we propose a method for multistage chemical metallization of photopolymer structures (CMPS) printed using stereolithography technologies. Experimental testing of various elements of vacuum devices manufactured using this technology demonstrates great prospects for this approach. [ABSTRACT FROM AUTHOR]

Published
2023
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16. Resistive switching of memristors base on epitaxial structures p-Si/p-Ge/n-=SUP=-+-=/SUP=--Si(001) with Ru and Ag electrodes

Author

null Kruglov A. V., null Antonov I. N., null Kotomina V. E., null Shenina M. E., null Denisov S. A., null Shengurov V. G., null Gorshkov O. N., and null Filatov D. O.

Abstract

The electrical parameters of the prototype memristors based on p-Si/p-Ge/n+-Si(001) epitaxial heterostructures with Ag and Ru electrodes have been studied. The memristors with Ru electrodes demonstrated smaller electroforming voltage and greater ratio of currents in the low and high resistance values as compared to the memristors with Ag electrodes. Also, an inversion of the resistance switching polarity was observed in the memristors with Ru electrodes. Thses effects originate from a higher mobility of Ru3+ ions in the threading dislocations in the p-Si/p-Ge layers due to smaller ion radius. Keywords: Memristor, SiGe epitaxial layers, resistance switching.

Published
2023

20. Formation of a fine-grained Si-=SUB=-1-x-=/SUB=-Ge-=SUB=-x-=/SUB=- thermoelectric by spark plasma sintering

Author

null Trushin V. N., null Popov A. A., null Lantsev E. A., null Кuzetsov Yu. M., null Kotomina V. E., null Zdoroveyshchev A. V., null Erofeeva I. V., null Demina P. B., null Boryakov A. V., null Uskova E. A., null Boldin M.S., and null Dorokhin M. V.

Abstract

The kinetics of diffusion processes occurring during the formation of polycrystalline Si1-xGex nanostructures (x=0.20, 0.35) by spark plasma sintering in the temperature range 20-1200oC was studied for the first time. A mechanism for the formation of a SiGe solid solution is proposed as a result of a comprehensive study of the microstructure and phase composition of samples with particle sizes from 150 nm to 100 μm, together with the analysis of experimental sintering maps. It is based on the phenomenon of mutual diffusion of Si and Ge atoms that occurs during the entire sintering process. For the selected sintering modes, the grain size of the formed SiGe corresponds to the size of the initial powder particles. Keywords: spark plasma sintering, solid solution SiGe, thermoelectric characteristics, figure of merit ZT.

Published
2022

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