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We numerically investigate the possibility of using Tunnel field-effect transistor (TFET) in a 32 kHz crystal oscillator circuit to reduce power consumption. A simulation using SPICE (Simulation Program with Integrated Circuit Emphasis) is carried out based on a conventional CMOS transistor model. It is shown that the power consumption of TFET is one-tenth that of conventional low-power CMOS., Comment: 7 pages, 2 tables

The diffusion and activation of $n$-type impurities (P and As) implanted into $p$-type Ge(100) substrates were examined under various dose and annealing conditions. The secondary ion mass spectrometry profiles of chemical concentrations indicated the existence of a sufficiently high number of impurities with increasing implanted doses. However, spreading resistance probe profiles of electrical concentrations showed electrical concentration saturation in spite of increasing doses and indicated poor activation of As relative to P in Ge. The relationships between the chemical and electrical concentrations of P in Ge and Si were calculated, taking into account the effect of incomplete ionization. The results indicated that the activation of P was almost the same in Ge and Si. The activation ratios obtained experimentally were similar to the calculated values, implying insufficient degeneration of Ge. The profiles of P in Ge substrates with and without damage generated by Ge ion implantation were compared, and it was clarified that the damage that may compensate the activated $n$-type dopants has no relationship with the activation of P in Ge., Comment: 6 pages, 4 figures

The dielectric properties of noncrystalline hafnium silicon oxynitride (HfSiON) films with a variety of atomic compositions were investigated. The films were deposited by reactive sputtering of Hf and Si in an O, N, and Ar mixture ambient. The bonding states, band-gap energies, atomic compositions, and crystallinities were confirmed by X-ray photoelectron spectroscopy (XPS), reflection electron energy loss spectroscopy (REELS), Rutherford backscattering spectrometry (RBS), and X-ray diffractometry (XRD), respectively. The optical (high-frequency) dielectric constants were optically determined by the square of the reflective indexes measured by ellipsometry. The static dielectric constants were electrically estimated by the capacitance of Au/HfSiON/Si(100) structures. It was observed that low N incorporation in the films led to the formation of only Si-N bonds without Hf-N bonds. An abrupt decrease in band-gap energies was observed at atomic compositions corresponding to the boundary where Hf-N bonds start to form. By combining the data for the atomic concentrations and bonding states, we found that HfSiON can be regarded as a pseudo-quaternary alloy consisting of four insulating components: SiO$_2$, HfO$_2$, Si$_3$N$_4$, and Hf$_3$N$_4$. The optical and static dielectric constants for the films showed a nonlinear dependence on the N concentration, whose behavior can be understood in terms of abrupt Hf-N bond formation., Comment: 17 pages, 5 figures

The International Space Station (ISS) has a unique ability to capture the imagination of both students and teachers worldwide. Since 2000, the presence of humans onboard ISS has provided a foundation for numerous educational activities aimed at capturing that interest and motivating study in the sciences, technology, engineering and mathematics (STEM). Over 43 million students around the world have participated in ISS-related educational activities. Projects such as YouTube Space Lab, Sally Ride Earth Knowledge-based Acquired by Middle Schools (EarthKAM), SPHERES (Synchronized Position Hold Engage and Reorient Experimental Satellites) Zero-Robotics, Tomatosphere, and MAI-75 events among others have allowed for global student, teacher and public access to space through student classroom investigations and real-time audio and video contacts with crewmembers. Educational activities are not limited to STEM but encompass all aspects of the human condition. This is well illustrated in the Uchu Renshi project, a chain poem initiated by an astronaut while in space and continued and completed by people on Earth. With ISS operations now extended to 2024, projects like these and their accompanying educational materials are available to more students around the world. From very early on in the program's history, students have been provided with a unique opportunity to get involved and participate in science and engineering projects. Many of these projects support inquiry-based learning that allows students to ask questions, develop hypothesis-derived experiments, obtain supporting evidence and identify solutions or explanations. This approach to learning is well-published as one of the most effective ways to inspire students to pursue careers in scientific and technology fields. Ever since the first space station element was launched, a wide range of student experiments and educational activities have been performed, both individually and collaboratively, by all the international partner agencies, National Aeronautics and Space Administration (NASA), Canadian Space Agency (CSA), European Space Agency, (ESA), Japan Aerospace Exploration Agency (JAXA) and Russian Federal Space Agency (Roscosmos), and a number of non-participating countries, some under commercial agreements. Many of these programs still continue, and others are being developed and added to the stations tasks on a regular basis. These diverse student experiments and programs fall into one of the following categories: student-developed experiments; students performing classroom versions of ISS experiments; students participating in ISS investigator experiments; education competitions; students participating in ISS Engineering Education; Education Demonstrations and Cultural Activities. This paper summarizes some of the main student experiments and educational activities that have been conducted on the space station.