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Large surface area applications such as high efficiency >26% solar cells require surface patterning with 1–10 μm periodic patterns at high fidelity over 1–10 cm2$1 - \left(\text{cm}\right)^{2}$ areas (before up scaling to 1 m2$ \left(\text{m}\right)^{2}$) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Herein, a pathway is shown to high‐resolution sub‐1 μm etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum‐based lithography approach). A Bessel beam is used to alleviate the required high surface tracking tolerance for ablation of 0.3–0.8 μm diameter holes in 40 nm alumina Al2O3$\left(\text{Al}\right)_{2} \left(\text{O}\right)_{3}$–mask at high writing speed, 7.5 cm s−1; a patterning rate 1 cm2 per 20 min. Plasma etching protocol was optimized for a zero‐mesa formation of photonic‐crystal‐trapping structures and smooth surfaces at the nanoscale level. The maximum of minority carrier recombination time of 2.9 ms was achieved after the standard wafer passivation etch; resistivity of the wafer was 3.5 Ω cm. Scaling up in area and throughput of the demonstrated approach is outlined. [ABSTRACT FROM AUTHOR]

Fabrication and characterization of solar cells based on multicrystalline silicon (mc‐Si) thin films are described and synthesized from low‐cost soda‐lime glass (SLG). The aluminothermic redox reaction of the silicon oxide in SLG during low‐temperature annealing at 600 – 650 °C leads to an mc‐Si thin film with large grains of lateral dimensions in the millimeter range, and moderate p‐type conductivity with an average Al acceptor concentration between 5 × 1016 and 1.2 × 1017 cm−3 in the bulk. A residual composite layer of mainly alumina and unreacted Al forms beneath the mc‐Si thin film as the second product of the crystalline silicon synthesis (CSS) process, which can be used as rear contact in a vertical solar cell design. The mc‐Si absorber (≈10 µm) is thin enough that the diffusion length given by a minority carrier lifetime of ≈1 µs exceeds the path length to the top contact several times. Homojunction and heterojunction diodes have been fabricated on the mc‐Si thin films and show great potential of CSS for the realization of high‐performance solar cells. [ABSTRACT FROM AUTHOR]

Fast changing irradiation on vehicle-integrated photovoltaic (VIPV) modules may impose demanding requirements for maximum power point tracking (MPPT) to ensure high energy conversion efficiency. In this work, the results of simulations regarding the output and efficiency of an exemplary VIPV module under real-life irradiation conditions as measured with high time resolution are resulted. Herein, resistive as well as voltage source load is used as two idealized models of the MPPT. The simulations show that, in most cases, tracking with a resistive load at 1 Hz preserves above 90%rel of the convertible energy determined by the cell performances under given irradiance levels. With a voltage source load, these values do not undercut 97%rel at 0.1 Hz. Herein, it is also found that partial shading across the exemplary series connected module can reduce the converted energy in the range of 5-10%rel in relation to complete negligence of this effect. [ABSTRACT FROM AUTHOR]

Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. An IBC cell with POLO junctions for both polarities − a POLO2-IBC cell − has to electrically isolate the highly defective p+ and n+ poly-Si regions on the rear side of the cell to avoid parasitic recombination. Inserting an initially undoped, intrinsic (i) region between the p+ and n+ poly-Si regions was demonstrated to successfully prevent the parasitic recombination in the transition region of ISFH's 26.1%-efficient POLO2-IBC cell. In order to further improve the conversion efficiency towards 27%, we apply hydrogen-donating dielectric layer stacks to the p+-(i)-n+ POLO interdigitating rear side to enhance the passivation quality of the POLO junctions. We indeed show a significant improvement of POLO junctions on symmetrical full-area homogenously doped reference samples, but when we apply a hydrogen-donating layer stack on the p+-(i)-n+ POLO interdigitating rear side, we observe a strong degradation in the performance of the POLO2-IBC cell. We attribute this to the formation of a conductive channel between the p+ and n+ poly-Si regions due to the strong negative charge density of the hydrogen-donating layer stack.

The commonly observed absorption around 265 nm in AlN is hampering the outcoupling efficiency of light‐emitting diodes (LEDs) emitting in the UV‐C regime. Carbon impurities in the nitrogen sublattice (CN) of AlN are believed to be the origin of this absorption. A specially tailored experiment using a combination of ion implantation of boron, carbon, and neon with subsequent high‐temperature annealing allows to separate the influence of intrinsic point defects and carbon impurities regarding this absorption. Herein, the presented results reveal the relevance of the intrinsic nitrogen‐vacancy defect VN. This is in contradiction to the established explanation based on CN defects as the defect causing the 265 nm absorption and will be crucial for further UV‐LED improvement. Finally, in this article, a new interpretation of the 265 nm absorption is introduced, which is corroborated by density functional theory (DFT) results from the past decade, which are reviewed and discussed based on the new findings. [ABSTRACT FROM AUTHOR]

In addition to excellent surface passivation and carrier selectivity, the structure based on the heavily doped polysilicon layer on an ultrathin silicon oxide interlayer also demonstrates strong impurity gettering effects. Herein, the gettering strength of a range of phosphorus‐ or boron‐doped polysilicon films from different fabrication techniques is assessed and compared. Iron, one of the most common metallic impurities in silicon, is used as a tracer impurity to quantify the gettering strength (segregation coefficient). A comparison of the experimental results to the literature, combined with measurements of the electrically active and inactive dopant concentrations, enables us to suggest the main gettering mechanisms in different polysilicon films. The differences in the segregation coefficients of the phosphorus‐doped polysilicon films for iron are within one order of magnitude, in spite of their different combinations of gettering mechanisms. On the other hand, boron‐doped polysilicon films show a large variation in their gettering effects, although the predominant gettering mechanisms are all attributed to electrically inactive boron, according to the current understanding of the gettering mechanisms from the literature. Finally, the impact of different polysilicon gettering effects on the efficiency of tunnel oxide‐passivated contact (TOPCon) cells is simulated and discussed. [ABSTRACT FROM AUTHOR]

The setting up of a practical electrically driven light commercial demonstration vehicle with integrated photovoltaics (PV) is reported. The demonstrator vehicle is equipped with 15 modules based on the crystalline Si/amorphous Si heterojunction technology. The nominal total peak power under standard testing conditions is 2180 Wp. Specifically, the PV‐converted energy is fed into the high‐voltage (HV; 400 V) board‐net for a utilization of the large capacity of the HV battery and thus for direct range extension. The demonstrator vehicle is equipped with irradiation, wind, temperature, magnetic, and global positioning system sensors. Irradiation and temperature as well as the energy flows from modules, maximum power point trackers (MPPTs), low‐voltage buffer battery to HV battery via DC/DC, and from the HV battery to the loads during an exemplarily test drive day (May 31, 2021) are monitored. The range extension obtained at this day on our test route (51° 59′ N, 9° 31′ E) was 36 km, the corresponding CO2 savings account for ≈2.3 kg. The chain efficiency of the electronic components from the input side of the MPPTs to the HV output side of the DC/DC was 68.6%, whereas the DC/DC itself has an average efficiency of 90%. [ABSTRACT FROM AUTHOR]

Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. An IBC cell with POLO junctions for both polarities − a POLO2-IBC cell − has to electrically isolate the highly defective p+ and n+ poly-Si regions on the rear side of the cell to avoid parasitic recombination. Inserting an initially undoped, intrinsic (i) region between the p+ and n+ poly-Si regions was demonstrated to successfully prevent the parasitic recombination in the transition region of ISFH's 26.1%-efficient POLO2-IBC cell. In order to further improve the conversion efficiency towards 27%, we apply hydrogen-donating dielectric layer stacks to the p+-(i)-n+ POLO interdigitating rear side to enhance the passivation quality of the POLO junctions. We indeed show a significant improvement of POLO junctions on symmetrical full-area homogenously doped reference samples, but when we apply a hydrogen-donating layer stack on the p+-(i)-n+ POLO interdigitating rear side, we observe a strong degradation in the performance of the POLO2-IBC cell. We attribute this to the formation of a conductive channel between the p+ and n+ poly-Si regions due to the strong negative charge density of the hydrogen-donating layer stack. [ABSTRACT FROM AUTHOR]

We demonstrate the fabrication of a fully screen‐printed p‐type silicon solar cell with local hole‐collecting Al‐alloyed (Al‐p+) contacts with a record open circuit voltage of 716 mV. The solar cell is fabricated by using almost the same process equipment as PERC cells. One of the dominant recombination losses in PERC cells is the recombination in the passivated and in the contacted emitter regions that so far limit the open circuit voltage to values below 700 mV. We eliminate these loss channels by substituting the P‐diffused emitter by a passivating n‐type poly‐Silicon on Oxide (nPOLO) contact. We place this contact on the rear side because of its otherwise strong parasitic absorption. The Al‐p+ contacts are also located at the rear side to avoid front‐side shading. This results in a POLO‐IBC cell structure. The efficiency of the best cell so far is 23.0% with a designated area of 4 cm2 fabricated on a M2‐sized wafer. Scanning electron microscopy reveals an Al‐p+ thickness of less than 3.3 μm and only a few 100 nm at the contact ends, which is less than the 5 μm typically for optimized Al‐p+ contacts. A comparison of measured and simulated current‐voltage curves over a variation of the contact fraction extracts a high saturation current density of the Al‐p+ contact of J0‐Al ‐p+ = 2,250 fA cm−2 for the current screen‐print conditions and Al‐paste causing an absolute efficiency loss of 0.5%abs. The recombination at the AlOx/SiNy surface and the shunt resistance limits the cell by 0.6%abs each. [ABSTRACT FROM AUTHOR]