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There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550nm) with silicon to fabricate photodiodes, leveraging epitaxial layer transfer (ELT) methods. Two ELT techniques, epitaxial lift-off (ELO) and macro-transfer printing (MTP), are compared for transferring GaAsSb films from InP substrates to Si, forming PIN diodes. Characterization through atomic force microscopy (AFM), and transmission electron microscopy (TEM) exhibits a high-quality, defect-free interface. Current-voltage (IV) measurements and capacitance-voltage (CV) analysis validate the quality and functionality of the heterostructures. Photocurrent measurements at room temperature and 200 K demonstrate the device's photo-response at 1550 nm, highlighting the presence of an active interface., Comment: 14 pages, 5 figures, Pages 15-16 supplementary information

The increasing concentration of greenhouse gases, notably CH4 and CO2, has fueled global temperature increases, intensifying concerns regarding the prevailing climate crisis. Effectively monitoring these gases demands a detector spanning the extended short-wavelength infrared (~2.4 {\mu}m) range, covering wavelengths of CH4 (1.65 {\mu}m) and CO2 (2.05 {\mu}m). The state-of-the-art HgCdTe avalanche photodetectors (APDs) offer exceptional performance metrics, including high gain (M) and low excess noise (F). However, their widespread adoption is hindered by inherent challenges such as manufacturability, reproducibility, and cost factors. Moreover, their reliance on cryogenic cooling adds to the cost, size, weight, and power of the system. We have demonstrated a linear mode APD combining an InGaAs/GaAsSb type-II superlattice absorber and an AlGaAsSb multiplier lattice matched to InP substrates. This APD has demonstrated a room temperature M of 178, a maximum measurable external quantum efficiency of 3560 % at 2 {\mu}m, an extremely low excess noise (F < 2 at M < 20), and a small temperature coefficient of breakdown (7.58 mV/K {\mu}m). Such a high performance APD with manufacturable semiconductor materials could lead to a rapid transition to a commercial III-V foundry, holding the promise of revolutionizing high-sensitivity receivers for greenhouse gas monitoring.

The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they are limited in detecting 1.55 um light detection. This study proposes a p-type Si on n-type GaAs0.51Sb0.49 (GaAsSb) lattice matched to InP substrates heterojunction formed using a grafting technique for future GaAsSb/Si APD technology. A p+Si nanomembrane is transferred onto the GaAsSb/AlInAs/InP substrate, with an ultrathin ALD-Al2O3 oxide at the interface, which behaves as both double-side passivation and quantum tunneling layers. The devices exhibit excellent surface morphology and interface quality, confirmed by atomic force microscope (AFM) and transmission electron microscope (TEM). Also, the current-voltage (I-V) of the p+Si/n-GaAsSb heterojunction shows ideal rectifying characteristics with an ideality factor of 1.15. The I-V tests across multiple devices confirm high consistency and yield. Furthermore, the X-ray photoelectron spectroscopy (XPS) measurement reveals that GaAsSb and Si are found to have type-II band alignment with a conduction band offset of 50 meV which is favorable for the high-bandwidth APD application. The demonstration of the GaAsSb/Si heterojunction highlights the potential to advance current SWIR PD technologies., Comment: 14 pages, 6 figures

In an infrared photodetector, noise current (dark current) is generated throughout the volume of the detector. Reducing the volume will reduce dark current, but the corresponding smaller area will also reduce the received signal. By using a separate antenna to receive light, one can reduce the detector area without reducing the signal, thereby increasing its signal to noise ratio (SNR). Here, we present a dielectric resonator antenna (DRA) coupled infrared photodetector. Its performance is compared to a conventional resonant cavity enhanced slab detector. The Noise Equivalent Power (NEP) is used as a figure of merit for the comparison. Formulas for the NEP are derived for both cases. A pBp photodiode detector is assumed in the comparison. The active region of the photodiode is an InAs/GaSb Type II Superlattice (T2SL). A Genetic Algorithm is used to optimize the dimensions of the detector and the DRA to achieve the smallest NEP. The result is a photodetector that converts over 85% of the incident light into carriers with a volume reduced by 95%. This optimal geometry leads to a NEP reduced by 6.02dB over that of the conventional resonant cavity enhanced slab detector.

Graph-based extractive document summarization relies on the quality of the sentence similarity graph. Bag-of-words or tf-idf based sentence similarity uses exact word matching, but fails to measure the semantic similarity between individual words or to consider the semantic structure of sentences. In order to improve the similarity measure between sentences, we employ off-the-shelf deep embedding features and tf-idf features, and introduce a new text similarity metric. An improved sentence similarity graph is built and used in a submodular objective function for extractive summarization, which consists of a weighted coverage term and a diversity term. A Transformer based compression model is developed for sentence compression to aid in document summarization. Our summarization approach is extractive and unsupervised. Experiments demonstrate that our approach can outperform the tf-idf based approach and achieve state-of-the-art performance on the DUC04 dataset, and comparable performance to the fully supervised learning methods on the CNN/DM and NYT datasets.

A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated electronic band structure model are used to ensure accurate prediction of the optical transitions in these devices . The optimized models presented in this paper are able to reproduce the experimental results with an error less than 1$\%$. The effects of incident light polarization, alloy mole fraction, quantum dot dimensions, and doping have been investigated. The in-plane polarized light absorption is more significant than the perpendicularly polarized light absorption. Increasing the mole fraction of the strain controlling layer leads to a lower energy gap and larger absorption wavelength. Surprisingly, the absorption wavelength is highly sensitive to changes in the dot diameter, but almost insensitive to changes in the dot height. This unpredicted behavior is explained by sensitivity analysis of different factors which affect the optical transition energy.

We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena.

Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field- and thickness-dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance towards establishing the fundamental device physics of 2-D semiconductors.

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/{\mu}m at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 {\mu}m.

We design a polarization-sensitive resonator for use in midinfrared photodetectors, utilizing a photonic crystal cavity and a single or double-metal plasmonic waveguide to achieve enhanced detector efficiency due to superior optical confinement within the active region. As the cavity is highly frequency and polarization-sensitive, this resonator structure could be used in chip-based infrared spectrometers and cameras that can distinguish among different materials and temperatures to a high degree of precision., Comment: 14 pages, 12 figures

We demonstrate a multi-spectral polarization sensitive mid-infrared dots-in-a-well (DWELL) photodetector utilizing surface-plasmonic resonant elements, with tailorable frequency response and polarization selectivity. The resonant responsivity of the surface-plasmon detector shows an enhancement of up to 5 times that of an unpatterned control detector. As the plasmonic resonator involves only surface patterning of the top metal contact, this method is independent of light-absorbing material and can easily be integrated with current focal plane array processing for imaging applications., Comment: 8 pages, 3 figures

Photoluminescence spectroscopy of single InAs quantum dots at cryogenic temperatures (~14 K) is performed using a micron-scale optical fiber taper waveguide as a near-field optic. The measured collection efficiency of quantum dot spontaneous emission into the fundamental guided mode of the fiber taper is estimated at 0.1%, and spatially-resolved measurements with ~600 nm resolution are obtained by varying the taper position with respect to the sample and using the fiber taper for both the pump and collection channels., Comment: 4 pages, 3 figures

The quality factor (Q), mode volume (Veff), and room-temperature lasing threshold of microdisk cavities with embedded quantum dots (QDs) are investigated. Finite element method simulations of standing wave modes within the microdisk reveal that Veff can be as small as 2(lambda/n)^3 while maintaining radiation-limited Qs in excess of 10^5. Microdisks of diameter D=2 microns are fabricated in an AlGaAs material containing a single layer of InAs QDs with peak emission at lambda = 1317 nm. For devices with Veff ~2 (lambda/n)^3, Qs as high as 1.2 x 10^5 are measured passively in the 1.4 micron band, using an optical fiber taper waveguide. Optical pumping yields laser emission in the 1.3 micron band, with room temperature, continuous-wave thresholds as low as 1 microWatt of absorbed pump power. Out-coupling of the laser emission is also shown to be significantly enhanced through the use of optical fiber tapers, with laser differential efficiency as high as xi~16% and out-coupling efficiency in excess of 28%., Comment: 6 figures

Fiber taper waveguides are used to improve the efficiency of room temperature photoluminescence measurements of AlGaAs microdisk resonant cavities with embedded self-assembled InAs quantum dots. As a near-field collection optic, the fiber taper improves the collection efficiency from microdisk lasers by a factor of ~ 15-100 times in comparison to conventional normal incidence free-space collection techniques. In addition, the fiber taper can serve as a efficient means for pumping these devices, and initial measurements employing fiber pumping and collection are presented. Implications of this work towards chip-based cavity quantum electrodynamics experiments are discussed., Comment: 10 pages, 7 figures

Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs dots-in-a-well (DWELL) is performed using an optical-fiber-based probing technique at a wavelength (lambda~1400 nm) that is red-detuned from the dot emission wavelength (lambda~1200 nm). Measurements in the 1400 nm wavelength band on microdisks of diameter D = 4.5 microns show that these structures support modes with cold-cavity quality factors as high as 360,000. DWELL-containing microdisks are then studied through optical pumping at room temperature. Pulsed lasing at lambda ~ 1200 nm is seen for cavities containing a single layer of InAs dots, with threshold values of ~ 17 microWatts, approaching the estimated material transparency level. Room-temperature continuous wave operation is also observed., Comment: 4 pages, 3 figures