200 results on '"Krotkus, Arūnas"'
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2. Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys
3. Terahertz Emission from Semiconductors Excited by Ultrafast Laser Pulses
4. GaAs1-xBix growth on Ge: anti-phase domains, ordering, and exciton localization
5. Spectral dependence of THz emission from InN and InGaN layers
6. Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber
7. Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3
8. Semiconductor Characterization by Terahertz Excitation Spectroscopy
9. Intervalley energy separation in the conduction band of InAs1−x Bi x determined by terahertz emission spectroscopy
10. Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells
11. Epitaxial lift-off method for GaAs solar cells with high Al content AlGaAs window layer
12. Band gap engineering by cationic substitution in Sn(Zr1-xTix)Se3 alloy for bottom sub-cell application in solar cells
13. Photoluminescence at up to 2.4 μm wavelengths from GaInAsBi/AlInAs quantum wells
14. Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys.
15. Band gap engineering by cationic substitution in Sn(Zr1−xTix)Se3 alloy for bottom sub-cell application in solar cells.
16. Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3
17. A compact terahertz burst emission system driven with 1 μm fiber laser
18. Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures
19. Photoluminescence investigation of GaAs1 − xBix/GaAs heterostructures
20. The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates
21. THz photomixer with milled nanoelectrodes on LT-GaAs
22. Intervalley energy separation in the conduction band of InAs1− x Bi x determined by terahertz emission spectroscopy.
23. Performance Analysis of Gaasbi/Ingaas Heterostructure for Iii-V Multi-Junction Solar Cells
24. Fabrication and phase variation in annealed Cu 3Se 2 nanowire arrays
25. THz emission from semiconductor surfaces
26. Terahertz emission from ultrathin bismuth layers
27. Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents
28. Terahertz Photoconductivity Spectra of Electrodeposited Thin Bi Films
29. Simulations and experiments of mode-locking of semiconductor lasers: pulse evolution, frequency detuning, and bias dependence
30. Influence of Be Doping on Material Properties of Low-Temperature-Grown GaAs
31. Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators
32. Quantum dot materials for terahertz generation applications
33. Influence of laser irradiation on optical properties of GaAsBi/GaAs quantum wells
34. Thick epitaxial GaAsBi layers for terahertz components: the role of growth conditions
35. Bismides: 2D structures and quantum dots
36. Pulsed Terahertz Emission from Solution-Processed Lead Iodide Perovskite Films.
37. Growth and characterization of UTC photo-diodes containing GaAs1−xBix absorber layer
38. Terahertz emission from GaInAs p-i-n diodes photoexcited by femtosecond laser pulses
39. Growth and characterization of quaternary (GaIn)(AsBi) layers for optoelectronic terahertz detector applications
40. Spectral measurements of picosecond photoconductivity in terahertz detectors made from low temperature grown GaAs and GaInAs
41. Niche applications of solid-state lighting with controllable colour-rendition, spatial, photochemical, and photobiological properties
42. Kietakūnio apšvietimo su valdomomis spalvų perteikimo,erdvinėmis, fotocheminėmis ir fotobiologinėmis savybėmis nišiniai taikymai
43. Semiconductor characterization by terahertz radiation pulses
44. Puslaidininkių charakterizavimas terahercinės spinduliuotės impulsais
45. Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures
46. Photoluminescence at up to 2.4μm wavelengths from GaInAsBi/AlInAs quantum wells
47. Puslaidininkinių medžiagų, skirtų 1 µm bangos ilgio femtosekundiniais lazerio impulsais aktyvuojamų terahercinių optoelektronikos sistemų komponentams, tyrimas
48. Semiconductor materials for components of optoelectronic terahertz systems activated by femtosecond 1 µm wavelength laser pulses
49. High energy broad bandwidth optical parametric chirped pulse amplification
50. Žvaigždžių spiečiai M31 galaktikos pietvakarinėje dalyje. Fotometrinė apžvalga ir populiacijos savybės
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