34 results on '"Kruckmeyer, Kirby"'
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2. Total Ionizing Dose and Single Event Effects Test Results of Texas Instruments LMK04832-SP (5962R1722701 VXC) 3.2 GHz JESD204B Clock Jitter Cleaner with 14 Outputs
3. Enhancing observability of signal composition and error signatures during dynamic SEE analog to digital device testing
4. Single event transient response dependence on operating conditions for a digital to analog converter
5. Use of code error and beat frequency test method to identify single event upset sensitive circuits in a 1 GHz analog to digital converter
6. Evaluation of an Accelerated ELDRS Test Using Molecular Hydrogen
7. The Effects of ELDRS at Ultra-Low Dose Rates
8. The Effects of ELDRS at Ultra-Low Dose Rates
9. ELDRS Characterization to of Texas Instruments LMP2012 RRO Precision Amplifier
10. ELDRS Characterization up to 100 krad of Texas Instruments' Dual Amplifier LM158
11. TID and SEL test results for texas instruments' LMX2492 14 GHz PLL
12. ELDRS Characterization to 300 krad of Texas Instruments High Speed Amplifier LMH6702
13. ELDRS Characterization up to 300 Krad of Texas Instruments High Speed Amplifiers, LM7171 and LM6172
14. Single Event Effects Characterization of Texas Instruments ADC12D1600CCMLS, 12 Bit, 3.2 GSPS Analog-to-Digital Converter with Static and Dynamic Inputs
15. ELDRS Characterization of Texas Instruments LM185, 1.2V Precision Reference: Retrograde Behavior Demonstrates Why Taking Interim Test Points Is Important
16. Total Ionizing Dose Characterization of the Calibration Circuit of Texas Instruments' ADC12D1600CCMLS, 12b, 3.2 GSPS Analog-to-Digital Converter
17. Enhanced Low Dose Rate Sensitivity at Ultra-Low Dose Rates
18. A Study of Total Dose Mitigation Approaches for Charge Pumps in Phase-Locked Loop Applications
19. Impact of reference voltage on the ELDRS characteristics of the LM4050 shunt voltage reference
20. Analysis of Low Dose Rate Effects on Parasitic Bipolar Structures in CMOS Processes for Mixed-Signal Integrated Circuits
21. Single Event Transient Hardness of a New Complementary (npn $+$ pnp) SiGe HBT Technology on Thick-Film SOI
22. Evaluation of an Accelerated ELDRS Test Using Molecular Hydrogen
23. The Effects of ELDRS at Ultra-Low Dose Rates
24. SEE Testing of National Semiconductor's LM98640QML System on a Chip for Focal Plane Arrays and Other Imaging Systems
25. Single Event Transient and ELDRS Characterization Test Results for LM4050QML 2.5V Precision Reference
26. Low dose rate test results of national semiconductor's ELDRS-free bipolar comparators LM111 and LM119
27. Low Dose Rate Test Results of National Semiconductor's ELDRS-Free Bipolar Low Dropout (LDO) Regulator, LM2941 at Dose Rates of 1 and 10 Mrad(Si)/S
28. Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA
29. Low Dose Rate Test Results for National Semiconductor's ELDRS-Free LM136-2.5 Bipolar Reference
30. Single Event Transient (SET) Response of National Semiconductor's ELDRS-Free LM139 Quad Comparator
31. Low Dose Rate Test Results of National Semiconductor's ELDRS-free Bipolar Amplifier LM124 and Comparators LM139 and LM193
32. Use of code error and beat frequency test method to identify single event upset sensitive circuits in a 1GHz analog to digital converter
33. Single Event Upset Characterization of GHz Analog to Digital Converters with Dynamic Inputs Using a Beat Frequency Test Method
34. Single Event Transient Hardness of a New Complementary (npn + pnp) SiGe HBT Technology on Thick-Film SOI.
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