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Human mesenchymal stem cells (hMSCs), such as human adipose-derived stem cells (hADSCs), present heterogeneous characteristics, including varying differentiation abilities and genotypes. hADSCs isolated under different conditions exhibit differences in stemness. We isolated hADSCs from human fat tissues via culture on different cell culture biomaterials including tissue culture polystyrene (TCPS) dishes and extracellular matrix protein (ECM)-coated dishes in medium supplemented with 5% or 10% serum-converted human platelet lysate (hPL) or 10% fetal bovine serum (FBS) as a control. Currently, it is not clear whether xeno-free hPL in the cell culture medium promotes the ability of hMSCs such as hADSCs to differentiate into several cell lineages compared to the xenomaterial FBS. We investigated whether a synchronized effect of ECM (Matrigel, fibronectin, and recombinant vitronectin) coatings on TCPS dishes for efficient hADSC differentiation could be observed when hADSCs were cultured in hPL medium. We found that Matrigel-coated dishes promoted hADSC differentiation into osteoblasts and suppressed differentiation into chondrocytes in 10% hPL medium. Recombinant vitronectin- and fibronectin-coated dishes greatly promoted hADSC differentiation into osteoblasts and chondrocytes in 5% and 10% hPL media. hPL promoted hADSC differentiation into osteoblasts and chondrocytes compared to FBS on the fibronectin-coated surface and recombinant vitronectin-coated surface.

Cardiovascular disease remains the leading cause of death and disability in advanced countries. Stem cell transplantation has emerged as a promising therapeutic strategy for acute and chronic ischemic cardiomyopathy. The current status of stem cell therapies for patients with myocardial infarction is discussed from a bioengineering and biomaterial perspective in this review. We describe (a) the current status of clinical trials of human pluripotent stem cells (hPSCs) compared with clinical trials of human adult or fetal stem cells, (b) the gap between fundamental research and application of human stem cells, (c) the use of biomaterials in clinical and pre-clinical studies of stem cells, and finally (d) trends in bioengineering to promote stem cell therapies for patients with myocardial infarction. We explain why the number of clinical trials using hPSCs is so limited compared with clinical trials using human adult and fetal stem cells such as bone marrow-derived stem cells.

Piezoelectric nanogenerators have been investigated to generate electricity from environmental vibrations due to their energy conversion capabilities. In this study, we demonstrate an optimal geometrical design of inertial vibration direct-current piezoelectric nanogenerators based on obliquely aligned InN nanowire (NW) arrays with an optimized oblique angle of ∼58°, and driven by the inertial force of their own weight, using a mechanical shaker without any AC/DC converters. The nanogenerator device manifests potential applications not only as a unique energy harvesting device capable of scavenging energy from weak mechanical vibrations, but also as a sensitive strain sensor. The maximum output power density of the nanogenerator is estimated to be 2.9 nW cm -2 , leading to an improvement of about 3-12 times that of vertically aligned ZnO NW DC nanogenerators. Integration of two nanogenerators also exhibits a linear increase in the output power, offering an enormous potential for the creation of self-powered sustainable nanosystems utilizing incessantly natural ambient energy sources.

This study investigates the role of carrier concentration in semiconducting piezoelectric single-nanowire nanogenerators (SNWNGs) and piezotronic devices. Unintentionally doped and Si-doped GaN nanowire arrays with various carrier concentrations, ranging from 10(17) (unintentionally doped) to 10(19) cm(-3) (heavily doped), are synthesized. For SNWNGs, the output current of individual nanowires starts from a negligible level and rises to the maximum of ≈50 nA at a doping concentration of 5.63 × 10(18) cm(-3) and then falls off with further increase in carrier concentration, due to the competition between the reduction of inner resistance and the screening effect on piezoelectric potential. For piezotronic applications, the force sensitivity based on the change of the Schottky barrier height works best for unintentionally doped nanowires, reaching 26.20 ± 1.82 meV nN(-1) and then decreasing with carrier concentration. Although both types of devices share the same Schottky diode, they involve different characteristics in that the slope of the current-voltage characteristics governs SNWNG devices, while the turn-on voltage determines piezotronic devices. It is demonstrated that free carriers in piezotronic materials can influence the slope and turn-on voltage of the diode characteristics concurrently when subjected to strain. This work offers a design guideline for the optimum doping concentration in semiconductors for obtaining the best performance in piezotronic devices and SNWNGs., (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

This paper proposes an obliquely aligned InN nanorod array to maximize nanorod deformation in the application of nanopiezotronics. The surface-dependent piezotronic I-V characteristics of the InN nanorod array with exposed polar (0002) and semipolar ( ̅1102) planes were studied by conductive atomic force microscopy. The effects of the piezopotential, created in the InN under straining, and the surface quantum states on the transport behavior of charge carriers in different crystal planes of the InN nanorod were investigated. The crystal plane-dependent electron density in the electron surface accumulation layer and the strain-dependent piezopotential distribution modulate the interfacial contact of the Schottky characteristics for the (0002) plane and the quasi-ohmic behavior for the ( ̅1102) plane. Regarding the piezotronic properties under applied forces, the Schottky barrier height increases in conjunction with the deflection force with high current density at large biases because of tunneling. The strain-induced piezopotential can thus tune the transport process of the charge carriers inside the InN nanorod over a larger range than in ZnO. The quantized surface electron accumulation layer is demonstrated to modulate the piezopotential-dependent carrier transport at the metal/InN interfaces and become an important factor in the design of InN-based piezotronic devices and nanogenerators., (© 2011 American Chemical Society)