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Attention to low-temperature processes of metal film deposition is due to the necessity to obtain electrically conducting layers on different surfaces including those containing polymeric regions. The use of a highly volatile precursor, for example Pd(hfa)2, with simultaneous stimulation of its decomposition in the atmosphere of hydrogen using the VUV radiation of excimer lamps with the wavelength 116 to 126 nm allows one to decrease the temperature for the deposition of mirror metal films. In the present work, the composition and morphology of palladium films are examined by means of scanning electron microscopy, ESCA, spectral ellipsometry, depending on the temperature of substrate and precursor, deposition time, flow rates of hydrogen and argon. The nature of the substrate, its activation by VUV radiation allow selective deposition of palladium films on combined substrates (metal - polymer) with a complicated spatial relief.

VUV-stimulated processes of copper layer deposition were investigated. A conventional compound, copper bis-hexafluoroacetylacetonate, was used as a precursor. Excimer lamps emitting light within the wavelength range 116-172 nm were used as the sources of VUV radiation. The results of quantum-chemical calculations were compared with the electronic spectra of copper bis-hexafluoroacetylacetonate in the gas phase. Calculations were carried out using the quantum chemical method of the density functional theory with Slater type of atomic wave functions (DFT/TZP). On the basis of thus determined electronic structure, allowed dipole-dipole electron transitions within the wavelength region 100-1200 nm were calculated; they were compared with the experimental spectra. Investigation of copper deposition processes was carried out under variation of substrate temperature and precursor, process time, presence of reactant gas, spectral characteristics of the excimer lamps. The resulting layers were characterized by means of SEM, ESCA, ellipsometry.

Dipivaloylmethane was used as a precursor to deposit MgO layers on polished silicon (100) plane in a hot-wall pulsed MO CVD reactor. A detailed investigation of the thermal parameters of the precursor was carried out to optimize the conditions for film deposition experiments. Temperature dependencies of vapour pressure were measured using the flow procedure and Knudsen's method with the mass spectrometric identification of the composition of the gas phase. The processes of Mg(thd)2 decomposition in vacuum, in oxygen and in water vapour were investigated by means of high-temperature mass spectrometry. The major products of precursor decomposition were established; the mechanism of its decomposition was proposed. Investigation of the deposition of MgO layers was carried out within the substrate temperature range 350-450oS, source temperature 190/210oC in the presence of oxygen. The resulting layers were characterized using AFM, ellipsometry, XRD. The morphology, structure and secondary electron emission of MgO films were investigated.

Numerical investigation of the gas dynamic processes that occur during film deposition by means of CVD on the surface of the submicron channels of cylindrical shape was carried out. For this purpose, a combination of Monte-Carlo procedure and molecular dynamics was applied. Molecules were simulated with solid spheres with a given gas kinetic diameter. The interaction between molecules was described using Lennard-Jones potential, while the interaction between the molecules and the walls was described with the repulsive branch of Lennard-Jones potential. Adsorption and energy exchange with the surface of channels were described with the help of Monte-Carlo procedure. A hit of a molecule into a channel through the inlet section was described with Monte-Carlo procedure, too. This allowed us to investigate the effect of pressure and temperature of the gas phase, and surface temperature, as well as the effect of the geometric parameters of the inlet sections on the distribution of the thickness of the formed film along the channel axis.