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Semiconductor quantum dots (QD) are a promising platform for multiple different qubit implementations, all of which are voltage-controlled by programmable gate electrodes. However, as the QD arrays grow in size and complexity, tuning procedures that can fully autonomously handle the increasing number of control parameters are becoming essential for enabling scalability. We propose a bootstrapping algorithm for initializing a depletion mode QD device in preparation for subsequent phases of tuning. During bootstrapping, the QD device functionality is validated, all gates are characterized, and the QD charge sensor is made operational. We demonstrate the bootstrapping protocol in conjunction with a coarse tuning module, showing that the combined algorithm can efficiently and reliably take a cooled-down QD device to a desired global state configuration in under 8 minutes with a success rate of 96 %. Importantly, by following heuristic approaches to QD device initialization and combining the efficient ray-based measurement with the rapid radio-frequency reflectometry measurements, the proposed algorithm establishes a reference in terms of performance, reliability, and efficiency against which alternative algorithms can be benchmarked., Comment: 9 pages, 3 figures, 1 table

Planar germanium quantum wells have recently been shown to host a hard-gapped superconductor-semiconductor interface. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear spin-free material expected to yield long coherence times. Therefore, as one of the few group IV materials with the potential to host superconductor-semiconductor hybrid devices, proximitized quantum dots in germanium are a crucial ingredient towards topological superconductivity and novel qubit modalities. Here we demonstrate a quantum dot (QD) in a Ge/SiGe heterostructure proximitized by a platinum germanosilicide (PtGeSi) superconducting lead (SC), forming a SC-QD-SC junction. We show tunability of the QD-SC coupling strength, as well as gate control of the ratio of charging energy and the induced gap. We further exploit this tunability by exhibiting control of the ground state of the system between even and odd parity. Furthermore, we characterize the critical magnetic field strengths, finding a robust critical out-of-plane field of 0.91(5) T. Finally we explore sub-gap spin splitting in the device, observing rich physics in the resulting spectra, that we model using a zero-bandwidth model in the Yu-Shiba-Rusinov limit. The demonstration of controllable proximitization at the nanoscale of a germanium quantum dot opens up the physics of novel spin and superconducting qubits, and Josephson junction arrays in a group IV material., Comment: Main text : 9 pages, 4 figures Supplement : 8 pages, 5 figures

Environmental fluctuations degrade the performance of solid-state qubits but can in principle be mitigated by real-time Hamiltonian estimation down to time scales set by the estimation efficiency. We implement a physics-informed and an adaptive Bayesian estimation strategy and apply them in real time to a semiconductor spin qubit. The physics-informed strategy propagates a probability distribution inside the quantum controller according to the Fokker-Planck equation, appropriate for describing the effects of nuclear spin diffusion in gallium-arsenide. Evaluating and narrowing the anticipated distribution by a predetermined qubit probe sequence enables improved dynamical tracking of the uncontrolled magnetic field gradient within the singlet-triplet qubit. The adaptive strategy replaces the probe sequence by a small number of qubit probe cycles, with each probe time conditioned on the previous measurement outcomes, thereby further increasing the estimation efficiency. The combined real-time estimation strategy efficiently tracks low-frequency nuclear spin fluctuations in solid-state qubits, and can be applied to other qubit platforms by tailoring the appropriate update equation to capture their distinct noise sources., Comment: 21 pages, 10 figures, including 11-page 6-figure Supplemental Material

Low-frequency qubit control wires require non-trivial thermal anchoring and low-pass filtering. The resulting electron temperature serves as a quality benchmark for these signal lines. In this technical note, we make use of a primary electron thermometry technique, using a Coulomb blockade thermometer, to establish the electron temperature in the millikelvin regime. The experimental four-probe measurement setup, the data analysis, and the measurement limitations are discussed in detail. We verify the results by also using another electron thermometry technique, based on a superconductor-insulator-normal metal junction. Our comparison of signal lines with QDevil's QFilter to unfiltered signal lines demonstrates that the filter significantly reduces both the rms noise and electron temperature, which is measured to be 22 $\pm$ 1 mK., Comment: 8 pages, 4 figures, technical note

Optimal control of qubits requires the ability to adapt continuously to their ever-changing environment. We demonstrate a real-time control protocol for a two-electron singlet-triplet qubit with two fluctuating Hamiltonian parameters. Our approach leverages single-shot readout classification and dynamic waveform generation, allowing full Hamiltonian estimation to dynamically stabilize and optimize the qubit performance. Powered by a field-programmable gate array (FPGA), the quantum control electronics estimates the Overhauser field gradient between the two electrons in real time, enabling controlled Overhauser-driven spin rotations and thus bypassing the need for micromagnets or nuclear polarization protocols. It also estimates the exchange interaction between the two electrons and adjusts their detuning, resulting in extended coherence of Hadamard rotations when correcting for fluctuations of both qubit axes. Our study emphasizes the critical role of feedback in enhancing the performance and stability of quantum devices affected by quasistatic noise. Feedback will play an essential role in improving performance in various qubit implementations that go beyond spin qubits, helping realize the full potential of quantum devices for quantum technology applications.

We introduce an algorithm that is able to find the facets of Coulomb diamonds in quantum dot arrays. We simulate these arrays using the constant-interaction model, and rely only on one-dimensional raster scans (rays) to learn a model of the device using regularized maximum likelihood estimation. This allows us to determine, for a given charge state of the device, which transitions exist and what the compensated gate voltages for these are. For smaller devices the simulator can also be used to compute the exact boundaries of the Coulomb diamonds, which we use to assess that our algorithm correctly finds the vast majority of transitions with high precision.

Many important phenomena in quantum devices are dynamic, meaning that they cannot be studied using time-averaged measurements alone. Experiments that measure such transient effects are collectively known as fast readout. One of the most useful techniques in fast electrical readout is radio-frequency reflectometry, which can measure changes in impedance (both resistive and reactive) even when their duration is extremely short, down to a microsecond or less. Examples of reflectometry experiments, some of which have been realised and others so far only proposed, include projective measurements of qubits and Majorana devices for quantum computing, real-time measurements of mechanical motion and detection of non-equilibrium temperature fluctuations. However, all of these experiments must overcome the central challenge of fast readout: the large mismatch between the typical impedance of quantum devices (set by the resistance quantum) and of transmission lines (set by the impedance of free space). Here, we review the physical principles of radio-frequency reflectometry and its close cousins, measurements of radio-frequency transmission and emission. We explain how to optimise the speed and sensitivity of a radio-frequency measurement, and how to incorporate new tools such as superconducting circuit elements and quantum-limited amplifiers into advanced radio-frequency experiments. Our aim is three-fold: to introduce the readers to the technique, to review the advances to date and to motivate new experiments in fast quantum device dynamics. Our intended audience includes experimentalists in the field of quantum electronics who want to implement radio-frequency experiments or improve them, together with physicists in related fields who want to understand how the most important radio-frequency measurements work., Comment: Review paper. 64 pages main text, 15 pages supplementary. 47 figures in main text, 5 in the supplementary

The implementation of large-scale fault-tolerant quantum computers calls for the integration of millions of physical qubits, with error rates of physical qubits significantly below 1%. This outstanding engineering challenge may benefit from emerging qubits that are protected from dominating noise sources in the qubits' environment. In addition to different noise reduction techniques, protective approaches typically encode qubits in global or local decoherence-free subspaces, or in dynamical sweet spots of driven systems. We exemplify such protective qubits by reviewing the state-of-art in protected solid-state qubits based on semiconductors, superconductors, and hybrid devices.

Quantum dot arrays possess ground states governed by Coulomb energies, utilized prominently by singly occupied quantum dots, each implementing a spin qubit. For such quantum processors, the controlled transitions between ground states are of operational significance, as these allow the control of quantum information within the array such as qubit initialization and entangling gates. For few-dot arrays, ground states are traditionally mapped out by performing dense raster-scan measurements in control-voltage space. These become impractical for larger arrays due to the large number of measurements needed to sample the high-dimensional gate-voltage hypercube and the comparatively little information extracted. We develop a hardware-triggered detection method based on reflectometry, to acquire measurements directly corresponding to transitions between ground states. These measurements are distributed sparsely within the high-dimensional voltage space by executing line searches proposed by a learning algorithm. Our autonomous software-hardware algorithm accurately estimates the polytope of Coulomb blockade boundaries, experimentally demonstrated in a 2$\times$2 array of silicon quantum dots., Comment: 10 pages, 4 figures

In spin based quantum dot arrays, material or fabrication imprecisions affect the behaviour of the device, which must be taken into account when controlling it. This requires measuring the shape of specific convex polytopes. In this work, we present an algorithm that automatically discovers count, shape and size of the facets of a convex polytope from measurements. Results on simulated devices as well as a real 2x2 spin qubit array show that we can reliably find the facets of the convex polytopes, including small facets with sizes on the order of the measurement precision.

In many physical approaches to quantum computation, error-correction schemes assume the ability to form two-dimensional qubit arrays with nearest-neighbor couplings and parallel operations at multiple qubit sites. While semiconductor spin qubits exhibit long coherence times relative to their operation speed and single-qubit fidelities above error correction thresholds, multiqubit operations in two-dimensional arrays have been limited by fabrication, operation, and readout challenges. We present a two-by-two array of four singlet-triplet qubits in gallium arsenide and show simultaneous coherent operations and four-qubit measurements via exchange oscillations and frequency-multiplexed single-shot measurements. A larger multielectron quantum dot is fabricated in the center of the array as a tunable interqubit link, which we utilize to demonstrate coherent spin exchange with selected qubits. Our techniques are extensible to other materials, indicating a path towards quantum processors with gate-controlled spin qubits., Comment: Revised version after peer review, with additional supporting data. 13 pages, 9 figures (including 4-page 4-figure supplement)

We use a superconducting microresonator as a cavity to sense absorption of microwaves by a superconducting quantum point contact defined by surface gates over a proximitized two-dimensional electron gas. Renormalization of the cavity frequency with phase difference across the point contact is consistent with adiabatic coupling to Andreev bound states. Near $\pi$ phase difference, we observe random fluctuations in absorption with gate voltage, related to quantum interference-induced modulations in the electron transmission. We identify features consistent with the presence of single Andreev bound states and describe the Andreev-cavity interaction using a dispersive Jaynes-Cummings model. By fitting the weak Andreev-cavity coupling, we extract ~GHz decoherence consistent with charge noise and the transmission dispersion associated with a localized state.

Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon., Comment: Roadmap article with contributed sections and subsections on: 1. Metrology and sensing 2. Quantum light sources, cavities and detectors 3. Quantum computing with spins 4. Nano and opto-mechanics 5. Low-dimensional systems 6. Molecular devices 7. Nanoplasmonics (47 pages, 25 figures). Contains arXiv:1907.02625, arXiv:1907.07087, arXiv:2001.11119, arXiv:2011.13907

Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2$\times$2 array of silicon quantum dots fabricated in a 300-mm-wafer foundry. Utilizing the strong capacitive couplings within the array, it is sufficient to monitor only one gate electrode via high-frequency reflectometry to establish single-electron occupation in each of the four dots and to detect single-electron movements with high bandwidth. A global top-gate electrode adjusts the overall tunneling times, while linear combinations of side-gate voltages yield detailed charge stability diagrams. To test for spin physics and Pauli spin blockade at finite magnetic fields, we implement symmetric gate-voltage pulses that directly reveal bidirectional interdot charge relaxation as a function of the detuning between two dots. Charge sensing within the array can be established without the involvement of adjacent electron reservoirs, important for scaling such split-gate devices towards longer 2$\times$N arrays. Our techniques may find use in the scaling of few-dot spin-qubit devices to large-scale quantum processors., Comment: 13 pages including appendices and 9 figures

Gate-defined quantum dots in gallium arsenide (GaAs) have been used extensively for pioneering spin qubit devices due to the relative simplicity of fabrication and favourable electronic properties such as a single conduction band valley, a small effective mass, and stable dopants. GaAs spin qubits are readily produced in many labs and are currently studied for various applications, including entanglement, quantum non-demolition measurements, automatic tuning, multi-dot arrays, coherent exchange coupling, and teleportation. Even while much attention is shifting to other materials, GaAs devices will likely remain a workhorse for proof-of-concept quantum information processing and solid-state experiments., Comment: This section is part of a roadmap on quantum technologies and comprises 4 pages with 2 figures

In recent years semiconducting qubits have undergone a remarkable evolution, making great strides in overcoming decoherence as well as in prospects for scalability, and have become one of the leading contenders for the development of large-scale quantum circuits. In this Review we describe the current state of the art in semiconductor charge and spin qubits based on gate-controlled semiconductor quantum dots, shallow dopants, and color centers in wide band gap materials. We frame the relative strengths of the different semiconductor qubit implementations in the context of quantum simulations, computing, sensing and networks. By highlighting the status and future perspectives of the basic types of semiconductor qubits, this Review aims to serve as a technical introduction for non-specialists as well as a forward-looking reference for scientists intending to work in this field., Comment: Review article, feedback welcome, 27 pages, 5 figures

Silicon spin qubits have achieved high-fidelity one- and two-qubit gates, above error correction thresholds, promising an industrial route to fault-tolerant quantum computation. A significant next step for the development of scalable multi-qubit processors is the operation of foundry-fabricated, extendable two-dimensional (2D) arrays. In gallium arsenide, 2D quantum-dot arrays recently allowed coherent spin operations and quantum simulations. In silicon, 2D arrays have been limited to transport measurements in the many-electron regime. Here, we operate a foundry-fabricated silicon 2x2 array in the few-electron regime, achieving single-electron occupation in each of the four gate-defined quantum dots, as well as reconfigurable single, double, and triple dots with tunable tunnel couplings. Pulsed-gate and gate-reflectometry techniques permit single-electron manipulation and single-shot charge readout, while the two-dimensionality allows the spatial exchange of electron pairs. The compact form factor of such arrays, whose foundry fabrication can be extended to larger 2xN arrays, along with the recent demonstration of coherent spin control and readout, paves the way for dense qubit arrays for quantum computation and simulation., Comment: 9 pages (including supplementary information and 5 figures)

Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double- and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface-mount resonant circuit to the plunger gate of a high-impedance sensor, we realized a fast charge sensing technique that is compatible with resistive 2DEGs. We demonstrate this by acquiring at high speed charge stability diagrams of double- and triple-dot arrays in Si/SiGe heterostructures as well as pulsed-gate single-shot charge and spin readout with integration times as low as 2.4 $\mu$s., Comment: 10 pages, 5 figures, plus supplementary information with 9 pages and 6 figures

Radio-frequency (RF) reflectometry is implemented in hybrid semiconductor-superconductor nanowire systems designed to probe Majorana zero modes. Two approaches are presented. In the first, hybrid nanowire-based devices are part of a resonant circuit, allowing conductance to be measured as a function of several gate voltages ~40 times faster than using conventional low-frequency lock-in methods. In the second, nanowire devices are capacitively coupled to a nearby RF single-electron transistor made from a separate nanowire, allowing RF detection of charge, including charge-only measurement of the crossover from 2e inter-island charge transitions at zero magnetic field to 1e transitions at axial magnetic fields above 0.6 T, where a topological state is expected. Single-electron sensing yields signal-to-noise exceeding 3 and visibility 99.8% for a measurement time of 1 {\mu}s.

The Heisenberg exchange interaction between neighboring quantum dots allows precise voltage control over spin dynamics, due to the ability to precisely control the overlap of orbital wavefunctions by gate electrodes. This allows the study of fundamental electronic phenomena and finds applications in quantum information processing. Although spin-based quantum circuits based on short-range exchange interactions are possible, the development of scalable, longer-range coupling schemes constitutes a critical challenge within the spin-qubit community. Approaches based on capacitative coupling and cavity-mediated interactions effectively couple spin qubits to the charge degree of freedom, making them susceptible to electrically-induced decoherence. The alternative is to extend the range of the Heisenberg exchange interaction by means of a quantum mediator. Here, we show that a multielectron quantum dot with 50-100 electrons serves as an excellent mediator, preserving speed and coherence of the resulting spin-spin coupling while providing several functionalities that are of practical importance. These include speed (mediated two-qubit rates up to several gigahertz), distance (of order of a micrometer), voltage control, possibility of sweet spot operation (reducing susceptibility to charge noise), and reversal of the interaction sign (useful for dynamical decoupling from noise)., Comment: 6 pages including 4 figures, plus 8 supplementary pages including 5 supplementary figures

The coherent tunnelling of Cooper pairs across Josephson junctions (JJs) generates a nonlinear inductance that is used extensively in quantum information processors based on superconducting circuits, from setting qubit transition frequencies and interqubit coupling strengths, to the gain of parametric amplifiers for quantum-limited readout. The inductance is either set by tailoring the metal-oxide dimensions of single JJs, or magnetically tuned by parallelizing multiple JJs in superconducting quantum interference devices (SQUIDs) with local current-biased flux lines. JJs based on superconductor-semiconductor hybrids represent a tantalizing all-electric alternative. The gatemon is a recently developed transmon variant which employs locally gated nanowire (NW) superconductor-semiconductor JJs for qubit control. Here, we go beyond proof-of-concept and demonstrate that semiconducting channels etched from a wafer-scale two-dimensional electron gas (2DEG) are a suitable platform for building a scalable gatemon-based quantum computer. We show 2DEG gatemons meet the requirements by performing voltage-controlled single qubit rotations and two-qubit swap operations. We measure qubit coherence times up to ~2 us, limited by dielectric loss in the 2DEG host substrate.

We investigate the spin of a multielectron GaAs quantum dot in a sequence of nine charge occupancies, by exchange coupling the multielectron dot to a neighboring two-electron double quantum dot. For all nine occupancies, we make use of a leakage spectroscopy technique to reconstruct the spectrum of spin states in the vicinity of the interdot charge transition between a single- and a multielectron quantum dot. In the same regime we also perform time-resolved measurements of coherent exchange oscillations between the single- and multielectron quantum dot. With these measurements, we identify distinct characteristics of the multielectron spin state, depending on whether the dot's occupancy is even or odd. For three out of four even occupancies we do not observe any exchange interaction with the single quantum dot, indicating a spin-0 ground state. For the one remaining even occupancy, we observe an exchange interaction that we associate with a spin-1 multielectron quantum dot ground state. For all five of the odd occupancies, we observe an exchange interaction associated with a spin-1/2 ground state. For three of these odd occupancies, we clearly demonstrate that the exchange interaction changes sign in the vicinity of the charge transition. For one of these, the exchange interaction is negative (i.e. triplet-preferring) beyond the interdot charge transition, consistent with the observed spin-1 for the next (even) occupancy. Our experimental results are interpreted through the use of a Hubbard model involving two orbitals of the multielectron quantum dot. Allowing for the spin correlation energy (i.e. including a term favoring Hund's rules) and different tunnel coupling to different orbitals, we qualitatively reproduce the measured exchange profiles for all occupancies., Comment: 20 pages, 13 figures, 2 tables

By operating a one-electron quantum dot (fabricated between a multielectron dot and a one-electron reference dot) as a spectroscopic probe, we study the spin properties of a gate-controlled multielectron GaAs quantum dot at the transition between odd and even occupation number. We observe that the multielectron groundstate transitions from spin-1/2-like to singlet-like to triplet-like as we increase the detuning towards the next higher charge state. The sign reversal in the inferred exchange energy persists at zero magnetic field, and the exchange strength is tunable by gate voltages and in-plane magnetic fields. Complementing spin leakage spectroscopy data, the inspection of coherent multielectron spin exchange oscillations provides further evidence for the sign reversal and, inferentially, for the importance of non-trivial multielectron spin exchange correlations., Comment: 8 pages, including 4 main figures and 2 supplementary figurures

We operate a resonant exchange qubit in a highly symmetric triple-dot configuration using IQ-modulated RF pulses. At the resulting three-dimensional sweet spot the qubit splitting is an order of magnitude less sensitive to all relevant control voltages, compared to the conventional operating point, but we observe no significant improvement in the quality of Rabi oscillations. For weak driving this is consistent with Overhauser field fluctuations modulating the qubit splitting. For strong driving we infer that effective voltage noise modulates the coupling strength between RF drive and the qubit, thereby quickening Rabi decay. Application of CPMG dynamical decoupling sequences consisting of up to n = 32 {\pi} pulses significantly prolongs qubit coherence, leading to marginally longer dephasing times in the symmetric configuration. This is consistent with dynamical decoupling from low frequency noise, but quantitatively cannot be explained by effective gate voltage noise and Overhauser field fluctuations alone. Our results inform recent strategies for the utilization of partial sweet spots in the operation and long-distance coupling of triple-dot qubits., Comment: 6 pages, 5 figures

Using a singlet-triplet spin qubit as a sensitive spectrometer of the GaAs nuclear spin bath, we demonstrate that the spectrum of Overhauser noise agrees with a classical spin diffusion model over six orders of magnitude in frequency, from 1 mHz to 1 kHz, is flat below 10 mHz, and falls as $1/f^2$ for frequency $f \! \gtrsim \! 1$ Hz. Increasing the applied magnetic field from 0.1 T to 0.75 T suppresses electron-mediated spin diffusion, which decreases spectral content in the $1/f^2$ region and lowers the saturation frequency, each by an order of magnitude, consistent with a numerical model. Spectral content at megahertz frequencies is accessed using dynamical decoupling, which shows a crossover from the few-pulse regime ($\lesssim \! 16$ $\pi$-pulses), where transverse Overhauser fluctuations dominate dephasing, to the many-pulse regime ($\gtrsim \! 32$ $\pi$-pulses), where longitudinal Overhauser fluctuations with a $1/f$ spectrum dominate., Comment: 6 pages, 4 figures, 8 pages of supplementary material, 5 supplementary figures

The filter function formalism quantitatively describes the dephasing of a qubit by a bath that causes Gaussian fluctuations in the qubit energies with an arbitrary noise power spectrum. Here, we extend this formalism to account for more general types of noise that couple to the qubit through terms that do not commute with the qubit's bare Hamiltonian. Our approach applies to any power spectrum that generates slow noise fluctuations in the qubit's evolution. We demonstrate our formalism in the case of singlet-triplet qubits subject to both quasistatic nuclear noise and $1/\omega^\alpha$ charge noise and find good agreement with recent experimental findings. This comparison shows the efficacy of our approach in describing real systems and additionally highlights the challenges with distinguishing different types of noise in free induction decay experiments., Comment: 5 pages, 3 figures. See companion paper by F. Martins et al, Phys. Rev. Lett. 116, 116801 (2016) [arXiv:1511.07336]

We demonstrate a substantial improvement in the spin-exchange gate using symmetric control instead of conventional detuning in GaAs spin qubits, up to a factor-of-six increase in the quality factor of the gate. For symmetric operation, nanosecond voltage pulses are applied to the barrier that controls the interdot potential between quantum dots, modulating the exchange interaction while maintaining symmetry between the dots. Excellent agreement is found with a model that separately includes electrical and nuclear noise sources for both detuning and symmetric gating schemes. Unlike exchange control via detuning, the decoherence of symmetric exchange rotations is dominated by rotation-axis fluctuations due to nuclear field noise rather than direct exchange noise., Comment: 5 pages main text (4 figures) plus 5 pages supplemental information (3 figures)

Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins in the substrate hinders this approach. To realize spin qubits in a nuclear-spin-free system, intensive studies based on group-IV semiconductor are being pursued. In this case, the challenge is primarily control of materials and interfaces, and device nanofabrication. We report important steps toward implementing spin qubits in a predominantly nuclear-spin-free system by demonstrating state preparation, pulsed gate control, and charge-sensing spin readout of confined hole spins in a one-dimensional Ge/Si nanowire. With fast gating, we measure T1 spin relaxation times in coupled quantum dots approaching 1 ms, increasing with lower magnetic field, consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions.

Spin- and angular-resolved photoemission spectroscopy is a basic experimental tool for unveiling spin polarization of electron eigenstates in crystals. We prove, by using spin-orbit coupled graphene as a model, that photoconversion of a quasiparticle inside a crystal into a photoelectron can be accompanied with a dramatic change in its spin polarization, up to a total spin flip. This phenomenon is typical of quasiparticles residing away from the Brillouin zone center and described by higher rank spinors, and results in exotic patterns in the angular distribution of photoelectrons., Comment: 5 pages, 4 figures, improved presentation and figures, added references

We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference., Comment: 4 pages, 4 figures. Changes in response to reviewer comments. New data provide information about the mechanism causing the AMR and TAMR