Search

A highly pure and stable single-photon source is prepared that comprises a well-designed pillar array, in which each pillar contains only a few InAs quantum dots. A nano-pillar in this array is in direct contact with a fiber end surface and cooled in a liquid-He bath. Auto-correlation measurements show that this source provides an average g(2)(0) value of 0.0174 in the measured excitationpower range. This photon source and fiber coupling are quite rigid against external disturbances such as cooling-heating cycles and vibration, with long-term stability. [ABSTRACT FROM AUTHOR]

Bolted joints in heat exchangers, cylinder heads in combustion engines, and so on are subjected to heat fluxes. It is necessary to examine the mechanical behavior of such bolted joints under thermal changes in order to establish an optimal design. This paper deals with mechanical behavior of bolted joints, in which two hollow cylinders and two rectangular thick plates made of aluminum are fastened at room temperature by a bolt and nut made of steel, and are subjected to thermal changes or steady heat conduction. Temperature distributions of the joints are analyzed using the finite difference method. Then, methods for estimating an increment in axial bolt force and a maximum stress produced in the bolts are proposed. In the experiments, the aforementioned bolted joints are put in a furnace. Furthermore, the rectangular thick plates fastened by a bolt and nut are heated by an electric heater. Then, the temperatures on the surfaces of the clamped parts and the bolts are measured with thermocouples. The increase in axial bolt force and the maximum stress produced in the bolts under steady heat conduction or thermal changes are measured. The analytical results are in fairly good agreement with the experimental ones.

The behavior of a bolted connection, using several aluminum alloy pipe flanges with steel bolts and nuts, was examined under the condition of thermal conduction. Using the finite difference method, temperature distributions in the connection subjected to transient thermal conduction were analyzed. A method for obtaining an increment in axial bolt force and the maximum stress produced in the bolts was demonstrated. In the experiments, the temperature distribution in the connection was measured by use of thermocouples. In addition, both the increment and the maximum stress due to the difference in coefficients of linear expansion as well as the stress produced in the hub were measured by strain gages when the inner circumference of the pipe flanges was subjected to thermal conduction and the outer circumference was kept at room temperature. The analytical results were fairly consistent with the experimental ones.

We studied InAs quantum dots (QDs) where electron Cooper pairs penetrate from an adjacent niobium (Nb) superconductor with the proximity effect. With time-resolved luminescence measurements at the wavelength around 1550 nm, we observed luminescence enhancement and reduction of luminescence decay time constants at temperature below the superconducting critical temperature (TC) of Nb. On the basis of these measurements, we propose a method to determine the contribution of Cooper-pair recombination in InAs QDs. We show that the luminescence enhancement measured below TC is well explained with our theory including Cooper-pair recombination. [ABSTRACT FROM AUTHOR]

Photoluminescence (PL) in the blue wavelength region originating from a no-phonon (NP) transition at 2.734 eV and longitudinal optical (LO) phonon sidebands of Te isoelectronic centers (ICs) were clearly resolved after thermal annealing by δ-doping of Te in ZnSe layers. Broad luminescence (conventionally called the S1 band) had been previously observed in this region (i.e., around 2.65 eV). The PL intensities of the NP line and the phonon replicas followed a Poisson distribution with a mean phonon number (Huang–Rhys factor) of S∼1.1. This indicates that the broadening of the 2.65 eV emission band is due to the superposition of the NP lines and their LO phonon replicas originating from the Te ICs with slight variations in their transition energies. The origin of the luminescence is discussed in relation to linearly polarized PL measurements. [ABSTRACT FROM AUTHOR]

High-quality ZnO thin films have been grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates. Free-exciton absorption and exciton-LO phonon absorption peaks are observed in the films at room temperature, indicating that the exciton states are stable even at room temperature. Three excitonic transitions associated with valence bands A, B, and C are clearly revealed in the reflectance spectrum measured at low temperatures. This result indicates that the ZnO thin films have a perfect wurtzite crystal structure. Biexciton emission is observed in the photoluminescence spectra at low temperatures, from which the biexciton binding energy is estimated to be 14.5 meV, in good agreement with previous results. Exciton-LO (Ex-LO) and exciton-2LO (Ex-2LO) photon emission peaks are observed at low temperature. The energy difference between the Ex-LO and Ex-2LO bands is about 72.5 meV, which coincides with previously reported values of the LO phonon energy for ZnO thin films. [ABSTRACT FROM AUTHOR]

High-quality ZnO thin films were grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates. Three excitonic transitions associated with the valence bands A, B, and C were clearly revealed in the reflectance spectrum measured at 33 K. This result indicates that the ZnO thin films have the wurtzite crystalline structure. The emission spectra were measured with backscattering geometry at room temperature. When the excitation exceeded a certain value, linewidth narrowing, nonlinear rise of emission intensity, and the shortening of the carrier lifetime were clearly observed and these demonstrate the onset of stimulated emission. Together with the ZnO thickness dependence, we conclude that the observation of a stimulated emission in a direction perpendicular to the film surface is predominantly due to scattering of the in-plane stimulated emission by slightly remaining surface undulations in the ZnO films. [ABSTRACT FROM AUTHOR]

The energy relaxation processes of CdS self-assembled quantum dots (QDs) embedded in ZnSe were investigated. Longitudinal-optical (LO)-phonon resonant structures were discerned in the photoluminescence spectra under the CdS selective excitation, especially under nearly resonant excitation conditions. Strong energy selectivity among the Gaussian distributed energy levels of the QDs are observed in energy relaxation processes, in which excitons are dominantly injected into the QDs whose ground state energies with respect to the excitation energy are equal to the multi-LO-phonon energy of ZnSe. Detection-energy dependent photoluminescence excitation (PLE) measurements also suggest that the coupling strength between the excitons and LO phonons is strongly size-dependent, i.e., coupling is strongly enhanced in smaller QDs. In addition, type-II band alignment of the CdS/ZnSe heterostructure is experimentally confirmed directly by PLE measurements. [ABSTRACT FROM AUTHOR]

High quality ZnO thin films are grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates and free-exciton absorption and exciton-LO phonon absorption peaks is observed in the films at room temperature. It is indicated that the exciton states are stable even at room temperature.

High-quality ZnO thin films were grown by plasma-enhanced molecular-beam epitaxy (P-MBE) on sapphire substrates and the optical properties were studied. Three exciton transitions associated with the valence bands A, B and C were observed in reflectance spectra at 33 K. The result indicates that the ZnO thin films have well-defined wurtzite structure.