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4. Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment

6. Analysis of Breakdown-Voltage Increase on SiC Junction Barrier Schottky Diode Under Negative Bias Stress

8. Abnormal On Current Tendency in Saturation Region between High and Light Carbon Doped buffer layer in p-GaN HEMT

11. Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate

12. Investigating two−stage degradation of threshold voltage induced by off−state stress in AlGaN/GaN HEMTs

13. Investigation of degradation mechanism after negative bias temperature stress in Si/SiGe channel metal-oxide-semiconductor capacitors induced by hydrogen diffusion

14. Comparison of the Hot Carrier Degradation of N- and P-Type Fin Field-Effect Transistors in 14-nm Technology Nodes

17. Investigation of degradation behavior under negative bias temperature stress in Si/Si0.8Ge0.2 metal-oxide-semiconductor capacitors

18. Analysis of Hump Effect Induced by Positive Bias Temperature Instability in the Local Oxidation of Silicon n-MOSFETs

19. Investigation of Threshold Voltage and Drain Current Degradations in Si3N4/AlGaN/GaN MIS-HEMTs Under X-Ray Irradiation

20. Abnormal Threshold Voltage Degradation Under Semi-On State Stress in Si 3 N 4 /AlGaN/GaN-HEMT.

21. Reliability enhancement in dipole-doped metal oxide semiconductor capacitor induced by low-temperature and high-pressure nitridation

22. Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs

23. Leakage Current in Fast Recovery Diode Suppressed by Low Temperature Supercritical Fluid Treatment Process

25. Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices

26. A Study of Effects of Metal Gate Composition on Performance in Advanced n-MOSFETs

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