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By applying the restricted random dislocation distribution model, solved using a discrete Hankel transform approach, it is shown that the shapes and characteristics of the ω -scans of the ZnO 00.2 reflection are mainly determined by the strain field introduced by dislocations with a screw component. On the other hand, no clear evidence of mosaicity or interfacial region contributions is found despite the layers exhibiting a c axis oriented residual columnar structure and a highly defective interface being present. The applied model not only permits a more precise estimation of the densities of dislocations, which present a screw component with respect to methods based on the analysis of the 00.2 peak ω -scan FWHM, but also gives an indication of their distribution characteristics with the extracted values, as well as their homogeneous/quasi-regular spacing, being confirmed by cross-sectional transmission electron microscopy observations. [ABSTRACT FROM AUTHOR]

Structural modification of hypoeutectic Al-Si alloy EN-AC 46000 alloy influences its microstructure and mechanical properties. In a series of examinations the EN-AC 46000 alloy has been doped with Cr, W and Mo. The study involved the differential thermal analysis (DTA) and the light microscopy structural analysis of the samples cut from pressure die castings and from samples cast into the DTA cup. The DTA and microstructure analyses revealed new phases in the alloy doped with mentioned additives. The strength properties measurements of the alloys doped with Cr, W and Mo showed significant improvement in tensile strength and elongation, while preserving good hardness.

The paper presents results of the research work concerning effects of nickel concentration on the crystallization process, microstructure and selected properties of the compacted graphite iron. Compacted graphite in the cast iron was obtained with use of the Inmold process. The study has comprised the cast iron containing nickel up to concentration providing obtainment of austenitic microstructure of the matrix. The effect of the nickel on temperature of the eutectic crystallization was specified. It has been presented composition of the cast iron matrix in function of nickel concentration in a casting with wall thickness of 3 mm and 24 mm. Moreover, it has been presented conditions defining the possibility of obtaining an austenitic and martensitic compacted graphite iron. Effect of the nickel on hardness of the cast iron was described.

The paper presents the microstructure and selected properties of ausferritic nodular cast iron annealed at the temperature 520 and 550°C. This choice was dictated by the temperatures used in the practice of nitriding. Nodular graphite in cast iron was obtained with use of Inmold process. Cast iron containing molybdenum and copper ensuring obtaining an ausferrite in the cast iron matrix without the use of heat treatment of castings was tested. The effect of annealing temperature on the microstructure and the kind of fracture of the ausferritic nodular cast iron was presented. The effect of an annealing temperature on hardness, impact strength and the microhardness of ausferritic nodular cast iron matrix was shown too. The lamellar structure of phases in the cast iron matrix after annealing has been ascertained. There has been an increase in hardness of an annealed cast iron and microhardness of its matrix. The reduction in the impact strength of the cast iron annealed at 520 and 550°C was approximately 10-30%. Both an increase in the hardness of cast iron as well as an decrease in its impact strength is probably due to the separation of secondary carbides during the heat treatment.

We present Al2O3-ZnAl2O4-ZnO nanostructure, which could be a prominent candidate for optoelectronics, mechanical and sensing applications. While ZnO and ZnAl2O4 composites are mostly synthesized by sol-gel technique, we propose a solid-vapor growth mechanism. To produce Al2O3-ZnAl2O4-ZnO nanostructure, we conduct ZnO:C powder heating resulting in ZnO nanowires (NWs) growth on sapphire substrate and ZnAl2O4 spinel layer at the interface. The nanostructure was examined with Scanning Electron Microscopy (SEM) method. Focused Ion Beam (FIB) technique enabled us to prepare a lamella for Transmission Electron Microscopy (TEM) imaging. TEM examination revealed high crystallographic quality of both spinel and NW structure. Epitaxial relationships of Al2O3-ZnAl2O4 and ZnAl2O4-ZnO are given. [ABSTRACT FROM AUTHOR]

The paper presents the effect of tin on the crystallization process, microstructure and hardness of cast iron with compacted (vermicular) graphite. The compacted graphite was obtained with the use of magnesium treatment process (Inmold technology). The lack of significant effect of tin on the temperature of the eutectic transformation has been demonstrated. On the other hand, a significant decrease in the eutectoid transformation temperature with increasing tin concentration has been shown. It was demonstrated that tin narrows the temperature range of the austenite transformation. The effect of tin on the microstructure of cast iron with compacted graphite considering casting wall thickness has been investigated and described. The carbide-forming effect of tin in thin-walled (3 mm) castings has been demonstrated. The nomograms describing the microstructure of compacted graphite iron versus tin concentration have been developed. The effect of tin on the hardness of cast iron was given. [ABSTRACT FROM AUTHOR]

The paper presents the effect of manganese on the crystallization process, microstructure and selected properties: cast iron hardness as well as ferrite and pearlite microhardness. The compacted graphite was obtained by Inmold technology. The lack of significant effect on the temperature of the eutectic transformation was demonstrated. On the other hand, a significant reduction in the eutectoid transformation temperature with increasing manganese concentration has been shown. The effect of manganese on microstructure of cast iron with compacted graphite considering casting wall thickness was investigated and described. The nomograms describing the microstructure of compacted graphite iron versus manganese concentration were developed. The effect of manganese on the hardness of cast iron and microhardness of ferrite and pearlite were given. [ABSTRACT FROM AUTHOR]

We report on the experimental realization of Pb 1- x Sn x Te pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability of NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, we show that the interplay between ionic and covalent bonds favors the formation of pentagonal NWs. Additionally, we find that this pentagonal structure is more likely to occur in tellurides than in selenides. The disclination and twin boundary cause the electronic states originating from the NW core region to generate a conducting band connecting the valence and conduction bands, creating a symmetry-enforced metallic phase. The metallic core band has opposite slopes in the cases of Sn and Te twin boundaries, while the bands from the shell are insulating. We finally study the electronic and topological properties of pentagonal NWs unveiling their potential as a new platform for higher-order topology and fractional charge. These pentagonal NWs represent a unique case of intrinsic core-shell one-dimensional nanostructures with distinct structural, electronic and topological properties between the core and the shell region.

Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments., (© 2022. The Author(s).)

Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to a monolayer. Well-resolved narrow excitonic resonances can be observed for such monolayers although only for materials of sufficient crystalline quality and so far mostly available in the form of micrometer-sized flakes. A further significant improvement of optical and electrical properties can be achieved by transferring the TMD on hexagonal boron nitride (hBN). To exploit the full potential of TMDs in future applications, epitaxial techniques have to be developed that not only allow the growth of large-scale, high-quality TMD monolayers but also allow the growth to be performed directly on large-scale epitaxial hBN. In this work, we address this problem and demonstrate that MoSe 2 of high optical quality can be directly grown on epitaxial hBN on an entire 2 in. wafer. We developed a combined growth theme for which hBN is first synthesized at high temperature by metal organic vapor phase epitaxy (MOVPE) and as a second step MoSe 2 is deposited on top by molecular beam epitaxy (MBE) at much lower temperatures. We show that this structure exhibits excellent optical properties, manifested by narrow excitonic lines in the photoluminescence spectra. Moreover, the material is homogeneous on the area of the whole 2 in. wafer with only ±0.14 meV deviation of excitonic energy. Our mixed growth technique may guide the way for future large-scale production of high quality TMD/hBN heterostructures.

Nearly a 30% increase in the ferromagnetic phase transition temperature has been achieved in strained MnAs nanocrystals embedded in a wurtzite GaAs matrix. Wurtzite GaAs exerts tensile stress on hexagonal MnAs nanocrystals, preventing a hexagonal to orthorhombic structural phase transition, which in bulk MnAs is combined with the magnetic one. This effect results in a remarkable shift of the magneto-structural phase transition temperature from 313 K in the bulk MnAs to above 400 K in the tensely strained MnAs nanocrystals. This finding is corroborated by the state of the art transmission electron microscopy, sensitive magnetometry, and the first-principles calculations. The effect relies on defining a nanotube geometry of molecular beam epitaxy grown core-multishell wurtzite (Ga,In)As/(Ga,Al)As/(Ga,Mn)As/GaAs nanowires, where the MnAs nanocrystals are formed during the thermal-treatment-induced phase separation of wurtzite (Ga,Mn)As into the GaAs-MnAs granular system. Such a unique combination of two types of hexagonal lattices provides a possibility of attaining quasi-hydrostatic tensile strain in MnAs (impossible otherwise), leading to the substantial ferromagnetic phase transition temperature increase in this compound.