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1. Global sea-to-air flux climatology for bromoform, dibromomethane and methyl iodide

19. Simple and reproducible neurovascular model for neurosurgical training of anastomoses

21. FDSOI CMOS devices featuring dual strained channel and thin BOX extendable to the 10nm node

22. Bottom oxidation through STI (BOTS) — A novel approach to fabricate dielectric isolated FinFETs on bulk substrates

23. Global sea-to-air flux climatology for bromoform, dibromomethane and methyl iodide

24. ETSOI CMOS for System-on-Chip Applications Featuring 22nm Gate Length, Sub-100nm Gate Pitch, and 0.08mm2 RAM Cell

26. High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

27. UTBB FDSOI scaling enablers for the 10nm node

28. Global sea-to-air flux climatology for bromoform, dibromomethane and methyl iodide

29. Supplementary material to "Global sea-to-air flux climatology for bromoform, dibromomethane and methyl iodide"

31. Long time series of deep water particle flux in three biogeochemical provinces of the northeast Atlantic

32. High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

33. UTBB FDSOI transistors with dual STI for a multi-Vt strategy at 20nm node and below

34. Ground plane optimization for 20nm FDSOI transistors with thin Buried Oxide

35. Extremely thin SOI for system-on-chip applications

36. Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS

39. Implant approaches and challenges for 20nm node and beyond ETSOI devices

40. Enabling epitaxy on ultrathin implanted SOI

41. Extremely Thin SOI (ETSOI) - a Planar CMOS Technology for System-on-chip Applications

44. Extremely thin SOI (ETSOI) technology: Past, present, and future

46. Extremely-Thin SOI for Mainstream CMOS: Challenges and Opportunities

47. Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

48. A 0.063 µm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

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