886 results on '"Kwo, J."'
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2. Nanometer-thick molecular beam epitaxy Al films capped with in situ deposited Al2O3—High-crystallinity, morphology, and superconductivity.
3. Single-crystal epitaxial europium iron garnet films with strain-induced perpendicular magnetic anisotropy: structural, strain, magnetic, and spin transport properties
4. Effective passivation of p- and n-type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border traps.
5. Evidence for exchange Dirac gap in magneto-transport of topological insulator-magnetic insulator heterostructures
6. Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces
7. Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi2Se3/YIG heterostructures
8. Effective passivation of p- and n-type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border traps
9. GaAs MOSFETs with in-situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation
10. Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
11. Effective surface passivation of In0.53Ga0.47As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study
12. Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition
13. GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3
14. Attainment of nearly thermally limited subthreshold slope in GaAs MOSFETs with in-situ Y2O3gate dielectric for cryogenic electronics
15. Interface tailoring for CMOS, cryogenic electronics, and beyond
16. Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interface
17. Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative study
18. Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)
19. Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition
20. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation
21. Gaas Mosfets with In-Situ Y2o3 Dielectric: Attainment of Nearly Thermally Limited Subthreshold Slope and Enhanced Drain Currents Via Accumulation
22. Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process
23. Single-crystal atomic layer deposited Y2O3 on GaAs(0 0 1) – growth, structural, and electrical characterization
24. Perfecting high-κ/Ge and /InGaAs interfaces – push for ultimate CMOS and emerging cryogenic electronic devices
25. InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High-k Dielectrics for Science and Technology Beyond Si CMOS
26. High κ Gate Dielectrics for Compound Semiconductors
27. High-quality thulium iron garnet films with tunable perpendicular magnetic anisotropy by off-axis sputtering – correlation between magnetic properties and film strain
28. STRUCTURE, COMPOSITION AND ORDER AT INTERFACES OF CRYSTALLINE OXIDES AND OTHER HIGH-K MATERIALS ON SILICON
29. Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition
30. Single-crystal epitaxial europium iron garnet films with strain-induced perpendicular magnetic anisotropy: Structural, strain, magnetic, and spin transport properties
31. Ge metal-oxide-semiconductor devices with Al 2O 3/Ga 2O 3(Gd 2O 3) as gate dielectric
32. In-situ deposited HfO2 and Y2O3 on epi-Si/p-Ge — a comparative study of the interfacial properties and reliability
33. Thickness-dependent topological phase transition and Rashba-like preformed topological surface states of α-Sn(001) thin films on InSb(001)
34. Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in-situ deposited Al2O3/Y2O3 as a gate dielectric
35. Low interfacial density of states around midgap in MBE-Ga2O3(Gd2O3)/In0.2Ga0.8As
36. Achieving very high drain current of 1.23 mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET
37. Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film
38. MBE—Enabling technology beyond Si CMOS
39. Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN
40. Atomic-layer-deposited Al 2O 3 and HfO 2 on GaN: A comparative study on interfaces and electrical characteristics
41. In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2O 3 on pristine n-GaAs(0 0 1)-4 × 6 surface
42. Direct measurement of interfacial structure in epitaxial Gd 2O 3 on GaAs (0 0 1) using scanning tunneling microscopy
43. Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2O 3 on freshly molecular beam epitaxy grown GaAs
44. H 2S molecular beam passivation of Ge(0 0 1)
45. InGaAs and Ge MOSFETs with high κ dielectrics
46. Charge Dynamics in Metallic CuO2 Layers
47. Effects of sugammadex on incidence of postoperative residual neuromuscular blockade: a randomized, controlled study
48. Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO 2 as a gate dielectric
49. Self-aligned inversion-channel In 0.75Ga 0.25As metal–oxide–semiconductor field-effect-transistors using UHV-Al 2O 3/Ga 2O 3(Gd 2O 3) and ALD-Al 2O 3 as gate dielectrics
50. Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high- κ dielectrics on Ge without interfacial layers
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