Author: "L.Q. Zhang" - Searchworks@Jio Institute Digital Library Search Results

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1. Determination of spin and parity of D(s)⁎ mesons

Author: M. Ablikim, M.N. Achasov, P. Adlarson, R. Aliberti, A. Amoroso, M.R. An, Q. An, Y. Bai, O. Bakina, I. Balossino, Y. Ban, V. Batozskaya, K. Begzsuren, N. Berger, M. Berlowski, M. Bertani, D. Bettoni, F. Bianchi, E. Bianco, J. Bloms, A. Bortone, I. Boyko, R.A. Briere, A. Brueggemann, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, J.F. Chang, T.T. Chang, W.L. Chang, G.R. Che, G. Chelkov, C. Chen, Chao Chen, G. Chen, H.S. Chen, M.L. Chen, S.J. Chen, S.M. Chen, T. Chen, X.R. Chen, X.T. Chen, Y.B. Chen, Y.Q. Chen, Z.J. Chen, W.S. Cheng, S.K. Choi, X. Chu, G. Cibinetto, S.C. Coen, F. Cossio, J.J. Cui, H.L. Dai, J.P. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, B. Ding, X.X. Ding, Y. Ding, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, S.X. Du, Z.H. Duan, P. Egorov, Y.L. Fan, J. Fang, S.S. Fang, W.X. Fang, Y. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, K Fischer, M. Fritsch, C. Fritzsch, C.D. Fu, Y.W. Fu, H. Gao, Y.N. Gao, Yang Gao, S. Garbolino, I. Garzia, P.T. Ge, Z.W. Ge, C. Geng, E.M. Gersabeck, A Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, S. Gramigna, M. Greco, M.H. Gu, Y.T. Gu, C.Y Guan, Z.L. Guan, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guo, A. Guskov, X.T. H., W.Y. Han, X.Q. Hao, F.A. Harris, K.K. He, K.L. He, F.H. Heinsius, C.H. Heinz, Y.K. Heng, C. Herold, T. Holtmann, P.C. Hong, G.Y. Hou, Y.R. Hou, Z.L. Hou, H.M. Hu, J.F. Hu, T. Hu, Y. Hu, G.S. Huang, K.X. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, T. Hussain, N Hüsken, W. Imoehl, M. Irshad, J. Jackson, S. Jaeger, S. Janchiv, J.H. Jeong, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, Z.K. Jia, P.C. Jiang, S.S. Jiang, T.J. Jiang, X.S. Jiang, Y. Jiang, J.B. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, T. Johansson, X. K., S. Kabana, N. Kalantar-Nayestanaki, X.L. Kang, X.S. Kang, R. Kappert, M. Kavatsyuk, B.C. Ke, A. Khoukaz, R. Kiuchi, R. Kliemt, L. Koch, O.B. Kolcu, B. Kopf, M. Kuessner, A. Kupsc, W. Kühn, J.J. Lane, J.S. Lange, P. Larin, A. Lavania, L. Lavezzi, T.T. Lei, Z.H. Lei, H. Leithoff, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H. Li, H.B. Li, H.J. Li, H.N. Li, Hui Li, J.R. Li, J.S. Li, J.W. Li, Ke Li, L.J Li, L.K. Li, Lei Li, M.H. Li, P.R. Li, S.X. Li, T. Li, W.D. Li, W.G. Li, X.H. Li, X.L. Li, Xiaoyu Li, Y.G. Li, Z.J. Li, Z.X. Li, Z.Y. Li, C. Liang, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, A. Limphirat, D.X. Lin, T. Lin, B.J. Liu, B.X. Liu, C. Liu, C.X. Liu, D. Liu, F.H. Liu, Fang Liu, Feng Liu, G.M. Liu, H. Liu, H.B. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.L. Liu, J.Y. Liu, K. Liu, K.Y. Liu, Ke Liu, L. Liu, L.C. Liu, Lu Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, T. Liu, W.K. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, Z.H. Lu, C.L. Luo, M.X. Luo, T. Luo, X.L. Luo, X.R. Lyu, Y.F. Lyu, F.C. Ma, H.L. Ma, J.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, R.T. Ma, X.Y. Ma, Y. Ma, F.E. Maas, M. Maggiora, S. Maldaner, S. Malde, A. Mangoni, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, H. Miao, T.J. Min, R.E. Mitchell, X.H. Mo, N.Yu. Muchnoi, Y. Nefedov, F. Nerling, I.B. Nikolaev, Z. Ning, S. Nisar, Y. Niu, S.L. Olsen, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, Y.P. Pei, M. Pelizaeus, H.P. Peng, K. Peters, J.L. Ping, R.G. Ping, S. Plura, S. Pogodin, V. Prasad, F.Z. Qi, H. Qi, H.R. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, C.F. Qiao, J.J. Qin, L.Q. Qin, X.P. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, S.Q. Qu, C.F. Redmer, K.J. Ren, A. Rivetti, V. Rodin, M. Rolo, G. Rong, Ch. Rosner, S.N. Ruan, N. Salone, A. Sarantsev, Y. Schelhaas, K. Schoenning, M. Scodeggio, K.Y. Shan, W. Shan, X.Y. Shan, J.F. Shangguan, L.G. Shao, M. Shao, C.P. Shen, H.F. Shen, W.H. Shen, X.Y. Shen, B.A. Shi, H.C. Shi, J.L. Shi, J.Y. Shi, Q.Q. Shi, R.S. Shi, X. Shi, J.J. Song, T.Z. Song, W.M. Song, Y.J. Song, Y.X. Song, S. Sosio, S. Spataro, F. Stieler, Y.J. Su, G.B. Sun, G.X. Sun, H. Sun, H.K. Sun, J.F. Sun, K. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, Y. Sun, Y.J. Sun, Y.Z. Sun, Z.T. Sun, Y.X. Tan, C.J. Tang, G.Y. Tang, J. Tang, Y.A. Tang, L.Y Tao, Q.T. Tao, M. Tat, J.X. Teng, V. Thoren, W.H. Tian, Y. Tian, Z.F. Tian, I. Uman, B. Wang, B.L. Wang, Bo Wang, C.W. Wang, D.Y. Wang, F. Wang, H.J. Wang, H.P. Wang, K. Wang, L.L. Wang, M. Wang, Meng Wang, S. Wang, T. Wang, T.J. Wang, W. Wang, W.H. Wang, W.P. Wang, X. Wang, X.F. Wang, X.J. Wang, X.L. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.H. Wang, Y.N. Wang, Y.Q. Wang, Yaqian Wang, Yi Wang, Z. Wang, Z.L. Wang, Z.Y. Wang, Ziyi Wang, D. Wei, D.H. Wei, F. Weidner, S.P. Wen, C.W. Wenzel, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, C. Wu, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, X.H. Wu, Y. Wu, Y.J Wu, Z. Wu, L. Xia, X.M. Xian, T. Xiang, D. Xiao, G.Y. Xiao, H. Xiao, S.Y. Xiao, Y.L. Xiao, Z.J. Xiao, C. Xie, X.H. Xie, Y. Xie, Y.G. Xie, Y.H. Xie, Z.P. Xie, T.Y. Xing, C.F. Xu, C.J. Xu, G.F. Xu, H.Y. Xu, Q.J. Xu, W.L. Xu, X.P. Xu, Y.C. Xu, Z.P. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, X.Q Yan, H.J. Yang, H.L. Yang, H.X. Yang, Tao Yang, Y. Yang, Y.F. Yang, Y.X. Yang, Yifan Yang, Z.W. Yang, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, T. Yu, X.D. Yu, C.Z. Yuan, L. Yuan, S.C. Yuan, X.Q. Yuan, Y. Yuan, Z.Y. Yuan, C.X. Yue, A.A. Zafar, F.R. Zeng, X. Zeng, Y. Zeng, Y.J. Zeng, X.Y. Zhai, Y.H. Zhan, A.Q. Zhang, B.L. Zhang, B.X. Zhang, D.H. Zhang, G.Y. Zhang, H. Zhang, H.H. Zhang, H.Q. Zhang, H.Y. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.W. Zhang, J.X. Zhang, J.Y. Zhang, J.Z. Zhang, Jiawei Zhang, L.M. Zhang, L.Q. Zhang, Lei Zhang, P. Zhang, Q.Y. Zhang, Shuihan Zhang, Shulei Zhang, X.D. Zhang, X.M. Zhang, X.Y. Zhang, Y. Zhang, Y.T. Zhang, Y.H. Zhang, Yan Zhang, Yao Zhang, Z.H. Zhang, Z.L. Zhang, Z.Y. Zhang, G. Zhao, J. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, J.P. Zheng, W.J. Zheng, Y.H. Zheng, B. Zhong, X. Zhong, H. Zhou, L.P. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, X.Y. Zhou, Y.Z. Zhou, J. Zhu, K. Zhu, K.J. Zhu, L. Zhu, L.X. Zhu, S.H. Zhu, S.Q. Zhu, T.J. Zhu, W.J. Zhu, Y.C. Zhu, Z.A. Zhu, J.H. Zou, and J. Zu
Subjects: Charmed meson, Spin and parity, BESIII, Physics, QC1-999
Abstract: The spin and parity of the charmed mesons Ds⁎+, D⁎0 and D⁎+ are determined for the first time to be JP=1− with significances greater than 10σ over other hypotheses of 2+ and 3−, using an e+e− collision data sample with an integrated luminosity of 3.19 fb−1 collected by the BESIII detector at a center-of-mass energy of 4.178 GeV. Different spin-parity hypotheses are tested via a helicity amplitude analysis of the processes e+e−→Ds⁎+Ds−, D⁎0D0 and D⁎+D−, with Ds⁎+→Ds+γ, D⁎0→D0π0, and D⁎+→D+π0. The results confirm the quark model predictions.
Published: 2023
Full Text: View/download PDF

2. Search for the semi-leptonic decays Λc+→Λπ+π−e+νe and Λc+→pKS0π−e+νe

Author: M. Ablikim, M.N. Achasov, P. Adlarson, R. Aliberti, A. Amoroso, M.R. An, Q. An, Y. Bai, O. Bakina, I. Balossino, Y. Ban, V. Batozskaya, K. Begzsuren, N. Berger, M. Bertani, D. Bettoni, F. Bianchi, E. Bianco, J. Bloms, A. Bortone, I. Boyko, R.A. Briere, A. Brueggemann, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, J.F. Chang, T.T. Chang, W.L. Chang, G.R. Che, G. Chelkov, C. Chen, Chao Chen, G. Chen, H.S. Chen, M.L. Chen, S.J. Chen, S.M. Chen, T. Chen, X.R. Chen, X.T. Chen, Y.B. Chen, Y.Q. Chen, Z.J. Chen, W.S. Cheng, S.K. Choi, X. Chu, G. Cibinetto, S.C. Coen, F. Cossio, J.J. Cui, H.L. Dai, J.P. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, B. Ding, X.X. Ding, Y. Ding, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, S.X. Du, Z.H. Duan, P. Egorov, Y.L. Fan, J. Fang, S.S. Fang, W.X. Fang, Y. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, K. Fischer, M. Fritsch, C. Fritzsch, C.D. Fu, Y.W. Fu, H. Gao, Y.N. Gao, Yang Gao, S. Garbolino, I. Garzia, P.T. Ge, Z.W. Ge, C. Geng, E.M. Gersabeck, A. Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, S. Gramigna, M. Greco, M.H. Gu, Y.T. Gu, C.Y. Guan, Z.L. Guan, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guo, A. Guskov, X.T. H, W.Y. Han, X.Q. Hao, F.A. Harris, K.K. He, K.L. He, F.H. Heinsius, C.H. Heinz, Y.K. Heng, C. Herold, T. Holtmann, P.C. Hong, G.Y. Hou, Y.R. Hou, Z.L. Hou, H.M. Hu, J.F. Hu, T. Hu, Y. Hu, G.S. Huang, K.X. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, T. Hussain, N. Hüsken, W. Imoehl, M. Irshad, J. Jackson, S. Jaeger, S. Janchiv, J.H. Jeong, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, Z.K. Jia, P.C. Jiang, S.S. Jiang, T.J. Jiang, X.S. Jiang, Y. Jiang, J.B. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, T. Johansson, X. K, S. Kabana, N. Kalantar-Nayestanaki, X.L. Kang, X.S. Kang, R. Kappert, M. Kavatsyuk, B.C. Ke, A. Khoukaz, R. Kiuchi, R. Kliemt, L. Koch, O.B. Kolcu, B. Kopf, M. Kuessner, A. Kupsc, W. Kühn, J.J. Lane, J.S. Lange, P. Larin, A. Lavania, L. Lavezzi, T.T. Lei, Z.H. Lei, H. Leithoff, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H. Li, H.B. Li, H.J. Li, H.N. Li, Hui Li, J.R. Li, J.S. Li, J.W. Li, Ke Li, L.J. Li, L.K. Li, Lei Li, M.H. Li, P.R. Li, S.X. Li, T. Li, W.D. Li, W.G. Li, X.H. Li, X.L. Li, Xiaoyu Li, Y.G. Li, Z.J. Li, Z.X. Li, Z.Y. Li, C. Liang, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, A. Limphirat, D.X. Lin, T. Lin, B.J. Liu, B.X. Liu, C. Liu, C.X. Liu, D. Liu, F.H. Liu, Fang Liu, Feng Liu, G.M. Liu, H. Liu, H.B. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.L. Liu, J.Y. Liu, K. Liu, K.Y. Liu, Ke Liu, L. Liu, L.C. Liu, Lu Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, T. Liu, W.K. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, Z.H. Lu, C.L. Luo, M.X. Luo, T. Luo, X.L. Luo, X.R. Lyu, Y.F. Lyu, F.C. Ma, H.L. Ma, J.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, R.T. Ma, X.Y. Ma, Y. Ma, F.E. Maas, M. Maggiora, S. Maldaner, S. Malde, A. Mangoni, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, H. Miao, T.J. Min, R.E. Mitchell, X.H. Mo, N.Yu. Muchnoi, Y. Nefedov, F. Nerling, I.B. Nikolaev, Z. Ning, S. Nisar, Y. Niu, S.L. Olsen, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, Y.P. Pei, M. Pelizaeus, H.P. Peng, K. Peters, J.L. Ping, R.G. Ping, S. Plura, S. Pogodin, V. Prasad, F.Z. Qi, H. Qi, H.R. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, C.F. Qiao, J.J. Qin, L.Q. Qin, X.P. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, S.Q. Qu, C.F. Redmer, K.J. Ren, A. Rivetti, V. Rodin, M. Rolo, G. Rong, Ch. Rosner, S.N. Ruan, N. Salone, A. Sarantsev, Y. Schelhaas, K. Schoenning, M. Scodeggio, K.Y. Shan, W. Shan, X.Y. Shan, J.F. Shangguan, L.G. Shao, M. Shao, C.P. Shen, H.F. Shen, W.H. Shen, X.Y. Shen, B.A. Shi, H.C. Shi, J.L. Shi, J.Y. Shi, Q.Q. Shi, R.S. Shi, X. Shi, J.J. Song, T.Z. Song, W.M. Song, Y.J. Song, Y.X. Song, S. Sosio, S. Spataro, F. Stieler, Y.J. Su, G.B. Sun, G.X. Sun, H. Sun, H.K. Sun, J.F. Sun, K. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, Y. Sun, Y.J. Sun, Y.Z. Sun, Z.T. Sun, Y.X. Tan, C.J. Tang, G.Y. Tang, J. Tang, Y.A. Tang, L.Y. Tao, Q.T. Tao, M. Tat, J.X. Teng, V. Thoren, W.H. Tian, Y. Tian, Z.F. Tian, I. Uman, B. Wang, B.L. Wang, Bo Wang, C.W. Wang, D.Y. Wang, F. Wang, H.J. Wang, H.P. Wang, K. Wang, L.L. Wang, M. Wang, Meng Wang, S. Wang, T. Wang, T.J. Wang, W. Wang, W.H. Wang, W.P. Wang, X. Wang, X.F. Wang, X.J. Wang, X.L. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.H. Wang, Y.N. Wang, Y.Q. Wang, Yaqian Wang, Yi Wang, Z. Wang, Z.L. Wang, Z.Y. Wang, Ziyi Wang, D. Wei, D.H. Wei, F. Weidner, S.P. Wen, C.W. Wenzel, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, C. Wu, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, X.H. Wu, Y. Wu, Y.J. Wu, Z. Wu, L. Xia, X.M. Xian, T. Xiang, D. Xiao, G.Y. Xiao, H. Xiao, S.Y. Xiao, Y.L. Xiao, Z.J. Xiao, C. Xie, X.H. Xie, Y. Xie, Y.G. Xie, Y.H. Xie, Z.P. Xie, T.Y. Xing, C.F. Xu, C.J. Xu, G.F. Xu, H.Y. Xu, Q.J. Xu, W.L. Xu, X.P. Xu, Y.C. Xu, Z.P. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, X.Q. Yan, H.J. Yang, H.L. Yang, H.X. Yang, Tao Yang, Y. Yang, Y.F. Yang, Y.X. Yang, Yifan Yang, Z.W. Yang, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, T. Yu, X.D. Yu, C.Z. Yuan, L. Yuan, S.C. Yuan, X.Q. Yuan, Y. Yuan, Z.Y. Yuan, C.X. Yue, A.A. Zafar, F.R. Zeng, X. Zeng, Y. Zeng, Y.J. Zeng, X.Y. Zhai, Y.H. Zhan, A.Q. Zhang, B.L. Zhang, B.X. Zhang, D.H. Zhang, G.Y. Zhang, H. Zhang, H.H. Zhang, H.Q. Zhang, H.Y. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.W. Zhang, J.X. Zhang, J.Y. Zhang, J.Z. Zhang, Jiawei Zhang, L.M. Zhang, L.Q. Zhang, Lei Zhang, P. Zhang, Q.Y. Zhang, Shuihan Zhang, Shulei Zhang, X.D. Zhang, X.M. Zhang, X.Y. Zhang, Y. Zhang, Y.T. Zhang, Y.H. Zhang, Yan Zhang, Yao Zhang, Z.H. Zhang, Z.L. Zhang, Z.Y. Zhang, G. Zhao, J. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, J.P. Zheng, W.J. Zheng, Y.H. Zheng, B. Zhong, X. Zhong, H. Zhou, L.P. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, X.Y. Zhou, Y.Z. Zhou, J. Zhu, K. Zhu, K.J. Zhu, L. Zhu, L.X. Zhu, S.H. Zhu, S.Q. Zhu, T.J. Zhu, W.J. Zhu, Y.C. Zhu, Z.A. Zhu, J.H. Zou, and J. Zu
Subjects: BESIII, Λc+ baryon, Semi-leptonic decays, Branching fractions, Physics, QC1-999
Abstract: We search for the semi-leptonic decays Λc+→Λπ+π−e+νe and Λc+→pKS0π−e+νe in a sample of 4.5fb−1 of e+e− annihilation data collected in the center-of-mass energy region between 4.600GeV and 4.699GeV by the BESIII detector at the BEPCII. No significant signals are observed, and the upper limits on the decay branching fractions are set to be B(Λc+→Λπ+π−e+νe)
Published: 2023
Full Text: View/download PDF

3. Search for invisible decays of a dark photon using e+e− annihilation data at BESIII

Author: M. Ablikim, M.N. Achasov, P. Adlarson, M. Albrecht, R. Aliberti, A. Amoroso, M.R. An, Q. An, X.H. Bai, Y. Bai, O. Bakina, R. Baldini Ferroli, I. Balossino, Y. Ban, V. Batozskaya, D. Becker, K. Begzsuren, N. Berger, M. Bertani, D. Bettoni, F. Bianchi, J. Bloms, A. Bortone, I. Boyko, R.A. Briere, A. Brueggemann, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, J.F. Chang, W.L. Chang, G. Chelkov, C. Chen, Chao Chen, G. Chen, H.S. Chen, M.L. Chen, S.J. Chen, S.M. Chen, T. Chen, X.R. Chen, X.T. Chen, Y.B. Chen, Z.J. Chen, W.S. Cheng, S.K. Choi, X. Chu, G. Cibinetto, S.C. Coen, F. Cossio, J.J. Cui, H.L. Dai, J.P. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, Y. Ding, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, S.X. Du, P. Egorov, Y.L. Fan, J. Fang, S.S. Fang, W.X. Fang, Y. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, K. Fischer, M. Fritsch, C. Fritzsch, C.D. Fu, H. Gao, Y.N. Gao, Yang Gao, S. Garbolino, I. Garzia, P.T. Ge, Z.W. Ge, C. Geng, E.M. Gersabeck, A. Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, M. Greco, L.M. Gu, M.H. Gu, Y.T. Gu, C.Y. Guan, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guo, A. Guskov, T.T. Han, W.Y. Han, X.Q. Hao, F.A. Harris, K.K. He, K.L. He, F.H. Heinsius, C.H. Heinz, Y.K. Heng, C. Herold, M. Himmelreich, T. Holtmann, G.Y. Hou, Y.R. Hou, Z.L. Hou, H.M. Hu, J.F. Hu, T. Hu, Y. Hu, G.S. Huang, K.X. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, T. Hussain, N. Hüsken, W. Imoehl, M. Irshad, J. Jackson, S. Jaeger, S. Janchiv, E. Jang, J.H. Jeong, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, Z.K. Jia, H.B. Jiang, S.S. Jiang, X.S. Jiang, Y. Jiang, J.B. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, T. Johansson, N. Kalantar-Nayestanaki, X.S. Kang, R. Kappert, M. Kavatsyuk, B.C. Ke, I.K. Keshk, A. Khoukaz, R. Kiuchi, R. Kliemt, L. Koch, O.B. Kolcu, B. Kopf, M. Kuemmel, M. Kuessner, A. Kupsc, W. Kühn, J.J. Lane, J.S. Lange, P. Larin, A. Lavania, L. Lavezzi, T.T. Lei, Z.H. Lei, H. Leithoff, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H. Li, H.B. Li, H.J. Li, H.N. Li, J.Q. Li, J.S. Li, J.W. Li, Ke Li, L.J. Li, L.K. Li, Lei Li, M.H. Li, P.R. Li, S.X. Li, S.Y. Li, T. Li, W.D. Li, W.G. Li, X.H. Li, X.L. Li, Xiaoyu Li, Z.X. Li, Z.Y. Li, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, A. Limphirat, D.X. Lin, T. Lin, B.J. Liu, C.X. Liu, D. Liu, F.H. Liu, Fang Liu, Feng Liu, G.M. Liu, H. Liu, H.B. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.L. Liu, J.Y. Liu, K. Liu, K.Y. Liu, Ke Liu, L. Liu, Lu Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, T. Liu, W.K. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, Z.H. Lu, C.L. Luo, M.X. Luo, T. Luo, X.L. Luo, X.R. Lyu, Y.F. Lyu, F.C. Ma, H.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, R.T. Ma, X.Y. Ma, Y. Ma, F.E. Maas, M. Maggiora, S. Maldaner, S. Malde, Q.A. Malik, A. Mangoni, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, H. Miao, T.J. Min, R.E. Mitchell, X.H. Mo, N.Yu. Muchnoi, Y. Nefedov, F. Nerling, I.B. Nikolaev, Z. Ning, S. Nisar, Y. Niu, S.L. Olsen, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, Y.P. Pei, M. Pelizaeus, H.P. Peng, K. Peters, J.L. Ping, R.G. Ping, S. Plura, S. Pogodin, V. Prasad, F.Z. Qi, H. Qi, H.R. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, Z. Qian, C.F. Qiao, J.J. Qin, L.Q. Qin, X.P. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, S.Q. Qu, K.H. Rashid, C.F. Redmer, K.J. Ren, A. Rivetti, V. Rodin, M. Rolo, G. Rong, Ch. Rosner, S.N. Ruan, A. Sarantsev, Y. Schelhaas, C. Schnier, K. Schoenning, M. Scodeggio, K.Y. Shan, W. Shan, X.Y. Shan, J.F. Shangguan, L.G. Shao, M. Shao, C.P. Shen, H.F. Shen, X.Y. Shen, B.A. Shi, H.C. Shi, J.Y. Shi, Q.Q. Shi, R.S. Shi, X. Shi, X.D. Shi, J.J. Song, W.M. Song, Y.X. Song, S. Sosio, S. Spataro, F. Stieler, K.X. Su, P.P. Su, Y.J. Su, G.X. Sun, H. Sun, H.K. Sun, J.F. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, X. Sun, Y.J. Sun, Y.Z. Sun, Z.T. Sun, Y.H. Tan, Y.X. Tan, C.J. Tang, G.Y. Tang, J. Tang, L.Y. Tao, Q.T. Tao, M. Tat, J.X. Teng, V. Thoren, W.H. Tian, Y. Tian, I. Uman, B. Wang, B.L. Wang, C.W. Wang, D.Y. Wang, F. Wang, H.J. Wang, H.P. Wang, K. Wang, L.L. Wang, M. Wang, Meng Wang, S. Wang, T. Wang, T.J. Wang, W. Wang, W.H. Wang, W.P. Wang, X. Wang, X.F. Wang, X.L. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.H. Wang, Y.Q. Wang, Yaqian Wang, Z. Wang, Z.Y. Wang, Ziyi Wang, D.H. Wei, F. Weidner, S.P. Wen, C.W. Wenzel, D.J. White, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, X.H. Wu, Y. Wu, Y.J. Wu, Z. Wu, L. Xia, T. Xiang, D. Xiao, G.Y. Xiao, H. Xiao, S.Y. Xiao, Y.L. Xiao, Z.J. Xiao, C. Xie, X.H. Xie, Y. Xie, Y.G. Xie, Y.H. Xie, Z.P. Xie, T.Y. Xing, C.F. Xu, C.J. Xu, G.F. Xu, H.Y. Xu, Q.J. Xu, X.P. Xu, Y.C. Xu, Z.P. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, H.J. Yang, H.L. Yang, H.X. Yang, L. Yang, S.L. Yang, Tao Yang, Y.F. Yang, Y.X. Yang, Yifan Yang, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, T. Yu, X.D. Yu, C.Z. Yuan, L. Yuan, S.C. Yuan, X.Q. Yuan, Y. Yuan, Z.Y. Yuan, C.X. Yue, A.A. Zafar, F.R. Zeng, X. Zeng, Y. Zeng, Y.H. Zhan, A.Q. Zhang, B.L. Zhang, B.X. Zhang, D.H. Zhang, G.Y. Zhang, H. Zhang, H.H. Zhang, H.Y. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.W. Zhang, J.X. Zhang, J.Y. Zhang, J.Z. Zhang, Jianyu Zhang, Jiawei Zhang, L.M. Zhang, L.Q. Zhang, Lei Zhang, P. Zhang, Q.Y. Zhang, Shuihan Zhang, Shulei Zhang, X.D. Zhang, X.M. Zhang, X.Y. Zhang, Y. Zhang, Y.T. Zhang, Y.H. Zhang, Yan Zhang, Yao Zhang, Z.H. Zhang, Z.Y. Zhang, G. Zhao, J. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, Q. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, J.P. Zheng, Y.H. Zheng, B. Zhong, C. Zhong, X. Zhong, H. Zhou, L.P. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, X.Y. Zhou, Y.Z. Zhou, J. Zhu, K. Zhu, K.J. Zhu, L.X. Zhu, S.H. Zhu, S.Q. Zhu, W.J. Zhu, Y.C. Zhu, Z.A. Zhu, B.S. Zou, J.H. Zou, and J. Zu
Subjects: Dark sector, Dark photon, Invisible decays, Physics, QC1-999
Abstract: We report a search for a dark photon using 14.9 fb−1 of e+e− annihilation data taken at center-of-mass energies from 4.13 to 4.60 GeV with the BESIII detector operated at the BEPCII storage ring. The dark photon is assumed to be produced in the radiative annihilation process of e+e− and to predominantly decay into light dark matter particles, which escape from the detector undetected. The mass range from 1.5 to 2.9 GeV is scanned for the dark photon candidate, and no significant signal is observed. The mass dependent upper limits at the 90% confidence level on the coupling strength parameter ϵ for a dark photon coupling with an ordinary photon vary between 1.6×10−3 and 5.7×10−3.
Published: 2023
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4. Study of the processes χ cJ → Ξ − Ξ ¯ $$ \overline{\Xi} $$ + and Ξ0 Ξ ¯ $$ \overline{\Xi} $$ 0

Author: The BESIII collaboration, M. Ablikim, M.N. Achasov, P. Adlarson, S. Ahmed, M. Albrecht, R. Aliberti, A. Amoroso, M.R. An, Q. An, X.H. Bai, Y. Bai, O. Bakina, R. Baldini Ferroli, I. Balossino, Y. Ban, K. Begzsuren, N. Berger, M. Bertani, D. Bettoni, F. Bianchi, J. Bloms, A. Bortone, I. Boyko, R.A. Briere, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, J.F. Chang, W.L. Chang, G. Chelkov, D.Y. Chen, G. Chen, H.S. Chen, M.L. Chen, S.J. Chen, X.R. Chen, Y.B. Chen, Z. J Chen, W.S. Cheng, G. Cibinetto, F. Cossio, X.F. Cui, H.L. Dai, X.C. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, Y. Ding, C. Dong, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, S.X. Du, Y.L. Fan, J. Fang, S.S. Fang, Y. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, M. Fritsch, C.D. Fu, Y. Gao, Y.G. Gao, I. Garzia, P.T. Ge, C. Geng, E.M. Gersabeck, A Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, M. Greco, L.M. Gu, M.H. Gu, C. Y Guan, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guo, A. Guskov, T.T. Han, W.Y. Han, X.Q. Hao, F.A. Harris, K.L. He, F.H. Heinsius, C.H. Heinz, Y.K. Heng, C. Herold, M. Himmelreich, T. Holtmann, G.Y. Hou, Y.R. Hou, Z.L. Hou, H.M. Hu, J.F. Hu, T. Hu, Y. Hu, G.S. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, Z. Huang, T. Hussain, N Hüsken, W. Ikegami Andersson, W. Imoehl, M. Irshad, S. Jaeger, S. Janchiv, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, H.B. Jiang, X.S. Jiang, J.B. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, T. Johansson, N. Kalantar-Nayestanaki, X.S. Kang, R. Kappert, M. Kavatsyuk, B.C. Ke, I.K. Keshk, A. Khoukaz, P. Kiese, R. Kiuchi, R. Kliemt, L. Koch, O.B. Kolcu, B. Kopf, M. Kuemmel, M. Kuessner, A. Kupsc, M.G. Kurth, W. Kühn, J.J. Lane, J.S. Lange, P. Larin, A. Lavania, L. Lavezzi, Z.H. Lei, H. Leithoff, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H. Li, H.B. Li, H.J. Li, H.N. Li, J.L. Li, J.Q. Li, J.S. Li, Ke Li, L.K. Li, Lei Li, P.R. Li, S.Y. Li, W.D. Li, W.G. Li, X.H. Li, X.L. Li, Xiaoyu Li, Z.Y. Li, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, C.X. Lin, D.X. Lin, T. Lin, B.J. Liu, C.X. Liu, D. Liu, F.H. Liu, Fang Liu, Feng Liu, G.M. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.L. Liu, J.Y. Liu, K. Liu, K.Y. Liu, Ke Liu, L. Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, T. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.D. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, C.L. Luo, M.X. Luo, P.W. Luo, T. Luo, X.L. Luo, X.R. Lyu, F.C. Ma, H.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, R.T. Ma, X.X. Ma, X.Y. Ma, F.E. Maas, M. Maggiora, S. Maldaner, S. Malde, Q.A. Malik, A. Mangoni, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, T.J. Min, R.E. Mitchell, X.H. Mo, N. Yu. Muchnoi, H. Muramatsu, S. Nakhoul, Y. Nefedov, F. Nerling, I.B. Nikolaev, Z. Ning, S. Nisar, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, P. Patteri, M. Pelizaeus, H.P. Peng, K. Peters, J. Pettersson, J.L. Ping, R.G. Ping, S. Pogodin, R. Poling, V. Prasad, H. Qi, H.R. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, Z. Qian, C.F. Qiao, J.J. Qin, L.Q. Qin, X.P. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, S.Q. Qu, K.H. Rashid, K. Ravindran, C.F. Redmer, A. Rivetti, V. Rodin, M. Rolo, G. Rong, Ch. Rosner, M. Rump, H.S. Sang, A. Sarantsev, Y. Schelhaas, C. Schnier, K. Schoenning, M. Scodeggio, W. Shan, X.Y. Shan, J.F. Shangguan, M. Shao, C.P. Shen, H.F. Shen, X.Y. Shen, H.C. Shi, R.S. Shi, X. Shi, X. D Shi, J.J. Song, W.M. Song, Y.X. Song, S. Sosio, S. Spataro, K.X. Su, P.P. Su, F.F. Sui, G.X. Sun, H.K. Sun, J.F. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, X Sun, Y.J. Sun, Y.Z. Sun, Z.T. Sun, Y.H. Tan, Y.X. Tan, C.J. Tang, G.Y. Tang, J. Tang, J.X. Teng, V. Thoren, W.H. Tian, Y.T. Tian, I. Uman, B. Wang, C.W. Wang, D.Y. Wang, H.J. Wang, H.P. Wang, K. Wang, L.L. Wang, M. Wang, M.Z. Wang, Meng Wang, S. Wang, W. Wang, W.H. Wang, W.P. Wang, X. Wang, X.F. Wang, X.L. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.Q. Wang, Y.Y. Wang, Z. Wang, Z.Y. Wang, Ziyi Wang, Zongyuan Wang, D.H. Wei, F. Weidner, S.P. Wen, D.J. White, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, X.H. Wu, Z. Wu, L. Xia, H. Xiao, S.Y. Xiao, Z.J. Xiao, X.H. Xie, Y.G. Xie, Y.H. Xie, T.Y. Xing, C.J. Xu, G.F. Xu, Q.J. Xu, W. Xu, X.P. Xu, Y.C. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, H.J. Yang, H.X. Yang, L. Yang, S.L. Yang, Y.X. Yang, Yifan Yang, Zhi Yang, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, J.S. Yu, T. Yu, C.Z. Yuan, L. Yuan, X.Q. Yuan, Y. Yuan, Z.Y. Yuan, C.X. Yue, A.A. Zafar, X. Zeng, Y. Zeng, A.Q. Zhang, B.X. Zhang, Guangyi Zhang, H. Zhang, H.H. Zhang, H.Y. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.W. Zhang, J.Y. Zhang, J.Z. Zhang, Jianyu Zhang, Jiawei Zhang, L.M. Zhang, L.Q. Zhang, Lei Zhang, S. Zhang, S.F. Zhang, Shulei Zhang, X.D. Zhang, X.Y. Zhang, Y. Zhang, Y.T. Zhang, Y.H. Zhang, Yan Zhang, Yao Zhang, Z.Y. Zhang, G. Zhao, J. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, Q. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, J.P. Zheng, Y.H. Zheng, B. Zhong, C. Zhong, L.P. Zhou, Q. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, X.Y. Zhou, A.N. Zhu, J. Zhu, K. Zhu, K.J. Zhu, S.H. Zhu, T.J. Zhu, W.J. Zhu, Y.C. Zhu, Z.A. Zhu, B.S. Zou, and J.H. Zou
Subjects: Branching fraction, e +-e − Experiments, QCD, Quarkonium, Nuclear and particle physics. Atomic energy. Radioactivity, QC770-798
Abstract: Abstract Using 448.1 × 106 ψ(3686) decays collected with the BESIII detector at the BEPCII e + e − storage rings, the branching fractions and angular distributions of the decays χ cJ → Ξ − Ξ ¯ $$ \overline{\Xi} $$ + and Ξ0 Ξ ¯ $$ \overline{\Xi} $$ 0 (J = 0, 1, 2) are measured based on a partial-reconstruction technique. The decays χ c1 → Ξ0 Ξ ¯ $$ \overline{\Xi} $$ 0 and χ c2 → Ξ0 Ξ ¯ $$ \overline{\Xi} $$ 0 are observed for the first time with statistical significances of 7σ and 15σ, respectively. The results of this analysis are in good agreement with previous measurements and have significantly improved precision.
Published: 2022
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5. Search for an axion-like particle in radiative J/ψ decays

Author: M. Ablikim, M.N. Achasov, P. Adlarson, R. Aliberti, A. Amoroso, M.R. An, Q. An, Y. Bai, O. Bakina, R. Baldini Ferroli, I. Balossino, Y. Ban, V. Batozskaya, D. Becker, K. Begzsuren, N. Berger, M. Bertani, D. Bettoni, F. Bianchi, E. Bianco, J. Bloms, A. Bortone, I. Boyko, R.A. Briere, A. Brueggemann, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, J.F. Chang, T.T. Chang, W.L. Chang, G.R. Che, G. Chelkov, C. Chen, Chao Chen, G. Chen, H.S. Chen, M.L. Chen, S.J. Chen, S.M. Chen, T. Chen, X.R. Chen, X.T. Chen, Y.B. Chen, Y.Q. Chen, Z.J. Chen, W.S. Cheng, S.K. Choi, X. Chu, G. Cibinetto, S.C. Coen, F. Cossio, J.J. Cui, H.L. Dai, J.P. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, Y. Ding, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, S.X. Du, Z.H. Duan, P. Egorov, Y.L. Fan, J. Fang, S.S. Fang, W.X. Fang, Y. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, K. Fischer, M. Fritsch, C. Fritzsch, C.D. Fu, Y.W. Fu, H. Gao, Y.N. Gao, Yang Gao, S. Garbolino, I. Garzia, P.T. Ge, Z.W. Ge, C. Geng, E.M. Gersabeck, A. Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, M. Greco, M.H. Gu, Y.T. Gu, C.Y. Guan, Z.L. Guan, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guo, A. Guskov, X.T. H., W.Y. Han, X.Q. Hao, F.A. Harris, K.K. He, K.L. He, F.H. Heinsius, C.H. Heinz, Y.K. Heng, C. Herold, T. Holtmann, P.C. Hong, G.Y. Hou, Y.R. Hou, Z.L. Hou, H.M. Hu, J.F. Hu, T. Hu, Y. Hu, G.S. Huang, K.X. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, T. Hussain, N. Hüsken, W. Imoehl, M. Irshad, J. Jackson, S. Jaeger, S. Janchiv, J.H. Jeong, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, Z.K. Jia, P.C. Jiang, S.S. Jiang, T.J. Jiang, X.S. Jiang, Y. Jiang, J.B. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, T. Johansson, X. K., S. Kabana, N. Kalantar-Nayestanaki, X.L. Kang, X.S. Kang, R. Kappert, M. Kavatsyuk, B.C. Ke, A. Khoukaz, R. Kiuchi, R. Kliemt, L. Koch, O.B. Kolcu, B. Kopf, M. Kuessner, A. Kupsc, W. Kühn, J.J. Lane, J.S. Lange, P. Larin, A. Lavania, L. Lavezzi, T.T. Lei, Z.H. Lei, H. Leithoff, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H. Li, H.B. Li, H.J. Li, H.N. Li, Hui Li, J.R. Li, J.S. Li, J.W. Li, Ke Li, L.J. Li, L.K. Li, Lei Li, M.H. Li, P.R. Li, S.X. Li, S.Y. Li, T. Li, W.D. Li, W.G. Li, X.H. Li, X.L. Li, Xiaoyu Li, Y.G. Li, Z.J. Li, Z.X. Li, Z.Y. Li, C. Liang, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, A. Limphirat, D.X. Lin, T. Lin, B.X. Liu, B.J. Liu, C. Liu, C.X. Liu, D. Liu, F.H. Liu, Fang Liu, Feng Liu, G.M. Liu, H. Liu, H.B. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.L. Liu, J.Y. Liu, K. Liu, K.Y. Liu, Ke Liu, L. Liu, L.C. Liu, Lu Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, T. Liu, W.K. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, Z.H. Lu, C.L. Luo, M.X. Luo, T. Luo, X.L. Luo, X.R. Lyu, Y.F. Lyu, F.C. Ma, H.L. Ma, J.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, R.T. Ma, X.Y. Ma, Y. Ma, F.E. Maas, M. Maggiora, S. Maldaner, S. Malde, A. Mangoni, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, H. Miao, T.J. Min, R.E. Mitchell, X.H. Mo, N.Yu. Muchnoi, Y. Nefedov, F. Nerling, I.B. Nikolaev, Z. Ning, S. Nisar, Y. Niu, S.L. Olsen, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, Y.P. Pei, M. Pelizaeus, H.P. Peng, K. Peters, J.L. Ping, R.G. Ping, S. Plura, S. Pogodin, V. Prasad, F.Z. Qi, H. Qi, H.R. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, C.F. Qiao, J.J. Qin, L.Q. Qin, X.P. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, S.Q. Qu, C.F. Redmer, K.J. Ren, A. Rivetti, V. Rodin, M. Rolo, G. Rong, Ch. Rosner, S.N. Ruan, A. Sarantsev, Y. Schelhaas, K. Schoenning, M. Scodeggio, K.Y. Shan, W. Shan, X.Y. Shan, J.F. Shangguan, L.G. Shao, M. Shao, C.P. Shen, H.F. Shen, W.H. Shen, X.Y. Shen, B.A. Shi, H.C. Shi, J.Y. Shi, Q.Q. Shi, R.S. Shi, X. Shi, J.J. Song, T.Z. Song, W.M. Song, Y.X. Song, S. Sosio, S. Spataro, F. Stieler, Y.J. Su, G.B. Sun, G.X. Sun, H. Sun, H.K. Sun, J.F. Sun, K. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, Y. Sun, Y.J. Sun, Y.Z. Sun, Z.T. Sun, Y.X. Tan, C.J. Tang, G.Y. Tang, J. Tang, Y.A. Tang, L.Y. Tao, Q.T. Tao, M. Tat, J.X. Teng, V. Thoren, W.H. Tian, Y. Tian, Z.F. Tian, I. Uman, B. Wang, B.L. Wang, C.W. Wang, D.Y. Wang, F. Wang, H.J. Wang, H.P. Wang, K. Wang, L.L. Wang, M. Wang, Meng Wang, S. Wang, T. Wang, T.J. Wang, W. Wang, W.H. Wang, W.P. Wang, X. Wang, X.F. Wang, X.J. Wang, X.L. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.H. Wang, Y.N. Wang, Y.Q. Wang, Yaqian Wang, Yi Wang, Z. Wang, Z.L. Wang, Z.Y. Wang, Ziyi Wang, D. Wei, D.H. Wei, F. Weidner, S.P. Wen, C.W. Wenzel, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, C. Wu, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, X.H. Wu, Y. Wu, Y.J. Wu, Z. Wu, L. Xia, X.M. Xian, T. Xiang, D. Xiao, G.Y. Xiao, H. Xiao, S.Y. Xiao, Y.L. Xiao, Z.J. Xiao, C. Xie, X.H. Xie, Y. Xie, Y.G. Xie, Y.H. Xie, Z.P. Xie, T.Y. Xing, C.F. Xu, C.J. Xu, G.F. Xu, H.Y. Xu, Q.J. Xu, X.P. Xu, Y.C. Xu, Z.P. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, X.Q. Yan, H.J. Yang, H.L. Yang, H.X. Yang, Tao Yang, Y. Yang, Y.F. Yang, Y.X. Yang, Yifan Yang, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, T. Yu, X.D. Yu, C.Z. Yuan, L. Yuan, S.C. Yuan, X.Q. Yuan, Y. Yuan, Z.Y. Yuan, C.X. Yue, A.A. Zafar, F.R. Zeng, X. Zeng, Y. Zeng, X.Y. Zhai, Y.H. Zhan, A.Q. Zhang, B.L. Zhang, B.X. Zhang, D.H. Zhang, G.Y. Zhang, H. Zhang, H.H. Zhang, H.Q. Zhang, H.Y. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.W. Zhang, J.X. Zhang, J.Y. Zhang, J.Z. Zhang, Jiawei Zhang, L.M. Zhang, L.Q. Zhang, Lei Zhang, P. Zhang, Q.Y. Zhang, Shuihan Zhang, Shulei Zhang, X.D. Zhang, X.M. Zhang, X.Y. Zhang, Y. Zhang, Y.T. Zhang, Y.H. Zhang, Yan Zhang, Yao Zhang, Z.H. Zhang, Z.L. Zhang, Z.Y. Zhang, G. Zhao, J. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, J.P. Zheng, W.J. Zheng, Y.H. Zheng, B. Zhong, X. Zhong, H. Zhou, L.P. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, X.Y. Zhou, Y.Z. Zhou, J. Zhu, K. Zhu, K.J. Zhu, L. Zhu, L.X. Zhu, S.H. Zhu, S.Q. Zhu, T.J. Zhu, W.J. Zhu, Y.C. Zhu, Z.A. Zhu, J.H. Zou, and J. Zu
Subjects: BESIII, Axion-like particle, Pseudo-Goldstone boson, Physics, QC1-999
Abstract: We search for an axion-like particle (ALP) a through the process ψ(3686)→π+π−J/ψ, J/ψ→γa, a→γγ in a data sample of (2.71±0.01)×109 ψ(3686) events collected by the BESIII detector. No significant ALP signal is observed over the expected background, and the upper limits on the branching fraction of the decay J/ψ→γa and the ALP-photon coupling constant gaγγ are set at 95% confidence level in the mass range of 0.165≤ma≤2.84GeV/c2. The limits on B(J/ψ→γa) range from 8.3×10−8 to 1.8×10−6 over the search region, and the constraints on the ALP-photon coupling are the most stringent to date for 0.165≤ma≤1.468GeV/c2.
Published: 2023
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6. Measurement of cross section for e+e−→Ξ0Ξ¯0 near threshold

Author: M. Ablikim, M.N. Achasov, P. Adlarson, S. Ahmed, M. Albrecht, R. Aliberti, A. Amoroso, M.R. An, Q. An, X.H. Bai, Y. Bai, O. Bakina, R. Baldini Ferroli, I. Balossino, Y. Ban, K. Begzsuren, N. Berger, M. Bertani, D. Bettoni, F. Bianchi, J. Bloms, A. Bortone, I. Boyko, R.A. Briere, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, X.Y. Chai, J.F. Chang, W.L. Chang, G. Chelkov, D.Y. Chen, G. Chen, H.S. Chen, M.L. Chen, S.J. Chen, X.R. Chen, Y.B. Chen, Z.J. Chen, W.S. Cheng, G. Cibinetto, F. Cossio, X.F. Cui, H.L. Dai, X.C. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, Y. Ding, C. Dong, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, S.X. Du, Y.L. Fan, J. Fang, S.S. Fang, Y. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, M. Fritsch, C.D. Fu, Y. Gao, Y.G. Gao, I. Garzia, P.T. Ge, C. Geng, E.M. Gersabeck, A. Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, M. Greco, L.M. Gu, M.H. Gu, S. Gu, Y.T. Gu, C.Y. Guan, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guo, A. Guskov, T.T. Han, W.Y. Han, X.Q. Hao, F.A. Harris, N. Hüsken, K.L. He, F.H. Heinsius, C.H. Heinz, T. Held, Y.K. Heng, C. Herold, M. Himmelreich, T. Holtmann, G.Y. Hou, Y.R. Hou, Z.L. Hou, H.M. Hu, J.F. Hu, T. Hu, Y. Hu, G.S. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, Z. Huang, T. Hussain, W. Ikegami Andersson, W. Imoehl, M. Irshad, S. Jaeger, S. Janchiv, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, H.B. Jiang, X.S. Jiang, J.B. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, T. Johansson, N. Kalantar-Nayestanaki, X.S. Kang, R. Kappert, M. Kavatsyuk, B.C. Ke, I.K. Keshk, A. Khoukaz, P. Kiese, R. Kiuchi, R. Kliemt, L. Koch, O.B. Kolcu, B. Kopf, M. Kuemmel, M. Kuessner, A. Kupsc, M.G. Kurth, W. Kühn, J.J. Lane, J.S. Lange, P. Larin, A. Lavania, L. Lavezzi, Z.H. Lei, H. Leithoff, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H. Li, H.B. Li, H.J. Li, J.L. Li, J.Q. Li, J.S. Li, Ke Li, L.K. Li, Lei Li, P.R. Li, S.Y. Li, W.D. Li, W.G. Li, X.H. Li, X.L. Li, Xiaoyu Li, Z.Y. Li, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, C.X. Lin, B.J. Liu, C.X. Liu, D. Liu, F.H. Liu, Fang Liu, Feng Liu, H.B. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.L. Liu, J.Y. Liu, K. Liu, K.Y. Liu, L. Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, Shuai Liu, T. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.D. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, C.L. Luo, M.X. Luo, P.W. Luo, T. Luo, X.L. Luo, X.R. Lyu, F.C. Ma, H.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, R.T. Ma, X.X. Ma, X.Y. Ma, F.E. Maas, M. Maggiora, S. Maldaner, S. Malde, Q.A. Malik, A. Mangoni, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, T.J. Min, R.E. Mitchell, X.H. Mo, Y.J. Mo, N.Yu. Muchnoi, H. Muramatsu, S. Nakhoul, Y. Nefedov, F. Nerling, I.B. Nikolaev, Z. Ning, S. Nisar, S.L. Olsen, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, P. Patteri, M. Pelizaeus, H.P. Peng, K. Peters, J. Pettersson, J.L. Ping, R.G. Ping, R. Poling, V. Prasad, H. Qi, H.R. Qi, K.H. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, Z. Qian, C.F. Qiao, L.Q. Qin, X.P. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, S.Q. Qu, K.H. Rashid, K. Ravindran, C.F. Redmer, A. Rivetti, V. Rodin, M. Rolo, G. Rong, Ch. Rosner, M. Rump, H.S. Sang, A. Sarantsev, Y. Schelhaas, C. Schnier, K. Schoenning, M. Scodeggio, D.C. Shan, W. Shan, X.Y. Shan, J.F. Shangguan, M. Shao, C.P. Shen, H.F. Shen, P.X. Shen, X.Y. Shen, H.C. Shi, R.S. Shi, X. Shi, X.D. Shi, J.J. Song, W.M. Song, Y.X. Song, S. Sosio, S. Spataro, K.X. Su, P.P. Su, F.F. Sui, G.X. Sun, H.K. Sun, J.F. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, X. Sun, Y.J. Sun, Y.K. Sun, Y.Z. Sun, Z.T. Sun, Y.H. Tan, Y.X. Tan, C.J. Tang, G.Y. Tang, J. Tang, J.X. Teng, V. Thoren, W.H. Tian, Y.T. Tian, I. Uman, B. Wang, C.W. Wang, D.Y. Wang, H.J. Wang, H.P. Wang, K. Wang, L.L. Wang, M. Wang, M.Z. Wang, Meng Wang, W. Wang, W.H. Wang, W.P. Wang, X. Wang, X.F. Wang, X.L. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.Q. Wang, Y.Y. Wang, Z. Wang, Z.Y. Wang, Ziyi Wang, Zongyuan Wang, D.H. Wei, F. Weidner, S.P. Wen, L.Z. Wen, D.J. White, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, Z. Wu, L. Xia, H. Xiao, S.Y. Xiao, Z.J. Xiao, X.H. Xie, Y.G. Xie, Y.H. Xie, T.Y. Xing, G.F. Xu, Q.J. Xu, W. Xu, X.P. Xu, Y.C. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, Xu Yan, H.J. Yang, H.X. Yang, L. Yang, S.L. Yang, Y.X. Yang, Yifan Yang, Zhi Yang, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, J.S. Yu, T. Yu, C.Z. Yuan, L. Yuan, X.Q. Yuan, Y. Yuan, Z.Y. Yuan, C.X. Yue, A. Yuncu, A.A. Zafar, Zeng, Y. Zeng, A.Q. Zhang, B.X. Zhang, Guangyi Zhang, H. Zhang, H.H. Zhang, H.Y. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.W. Zhang, J.Y. Zhang, J.Z. Zhang, Jianyu Zhang, Jiawei Zhang, L.M. Zhang, L.Q. Zhang, Lei Zhang, S. Zhang, S.F. Zhang, Shulei Zhang, X.D. Zhang, X.Y. Zhang, Y. Zhang, Y.H. Zhang, Y.T. Zhang, Yan Zhang, Yao Zhang, Yi Zhang, Z.H. Zhang, Z.Y. Zhang, G. Zhao, J. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, Q. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, J.P. Zheng, Y. Zheng, Y.H. Zheng, B. Zhong, C. Zhong, L.P. Zhou, Q. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, X.Y. Zhou, A.N. Zhu, J. Zhu, K. Zhu, K.J. Zhu, S.H. Zhu, T.J. Zhu, W.J. Zhu, Y.C. Zhu, Z.A. Zhu, B.S. Zou, and J.H. Zou
Subjects: Born cross section, Effective form factor, Threshold effect, Physics, QC1-999
Abstract: Using e+e− collision data at ten center-of-mass energies between 2.644 and 3.080 GeV collected with the BESIII detector at BEPCII and corresponding to an integrated luminosity of about 500 pb−1, we measure the cross sections and effective form factors for the process e+e−→Ξ0Ξ¯0 utilizing a single-tag method. A fit to the cross section of e+e−→Ξ0Ξ¯0 with a pQCD-driven power function is performed, from which no significant resonance or threshold enhancement is observed. In addition, the ratio of cross sections for the processes e+e−→Ξ−Ξ¯+ and Ξ0Ξ¯0 is calculated using recent BESIII measurement and is found to be compatible with expectation from isospin symmetry.
Published: 2021
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7. Measurement of proton electromagnetic form factors in the time-like region using initial state radiation at BESIII

Author: M. Ablikim, M.N. Achasov, P. Adlarson, S. Ahmed, M. Albrecht, R. Aliberti, A. Amoroso, M.R. An, Q. An, X.H. Bai, Y. Bai, O. Bakina, R. Baldini Ferroli, I. Balossino, Y. Ban, K. Begzsuren, N. Berger, M. Bertani, D. Bettoni, F. Bianchi, J. Bloms, A. Bortone, I. Boyko, R.A. Briere, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, J.F. Chang, W.L. Chang, G. Chelkov, D.Y. Chen, G. Chen, H.S. Chen, M.L. Chen, S.J. Chen, X.R. Chen, Y.B. Chen, Z.J. Chen, W.S. Cheng, G. Cibinetto, F. Cossio, X.F. Cui, H.L. Dai, X.C. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, Y. Ding, C. Dong, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, S.X. Du, Y.L. Fan, J. Fang, S.S. Fang, Y. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, M. Fritsch, C.D. Fu, Y. Gao, Y.G. Gao, I. Garzia, P.T. Ge, C. Geng, E.M. Gersabeck, A. Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, M. Greco, L.M. Gu, M.H. Gu, S. Gu, Y.T. Gu, C.Y. Guan, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guo, A. Guskov, T.T. Han, W.Y. Han, X.Q. Hao, F.A. Harris, N. Hüsken, K.L. He, F.H. Heinsius, C.H. Heinz, T. Held, Y.K. Heng, C. Herold, M. Himmelreich, T. Holtmann, G.Y. Hou, Y.R. Hou, Z.L. Hou, H.M. Hu, J.F. Hu, T. Hu, Y. Hu, G.S. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, Z. Huang, T. Hussain, W. Ikegami Andersson, W. Imoehl, M. Irshad, S. Jaeger, S. Janchiv, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, H.B. Jiang, X.S. Jiang, J.B. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, T. Johansson, N. Kalantar-Nayestanaki, X.S. Kang, R. Kappert, M. Kavatsyuk, B.C. Ke, I.K. Keshk, A. Khoukaz, P. Kiese, R. Kiuchi, R. Kliemt, L. Koch, O.B. Kolcu, B. Kopf, M. Kuemmel, M. Kuessner, A. Kupsc, M.G. Kurth, W. Kühn, J.J. Lane, J.S. Lange, P. Larin, A. Lavania, L. Lavezzi, Z.H. Lei, H. Leithoff, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H. Li, H.B. Li, H.J. Li, J.L. Li, J.Q. Li, J.S. Li, Ke Li, L.K. Li, Lei Li, P.R. Li, S.Y. Li, W.D. Li, W.G. Li, X.H. Li, X.L. Li, Xiaoyu Li, Z.Y. Li, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, C.X. Lin, D.X. Lin, B.J. Liu, C.X. Liu, D. Liu, F.H. Liu, Fang Liu, Feng Liu, H.B. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.L. Liu, J.Y. Liu, K. Liu, K.Y. Liu, L. Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, Shuai Liu, T. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.D. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, C.L. Luo, M.X. Luo, P.W. Luo, T. Luo, X.L. Luo, S. Lusso, X.R. Lyu, F.C. Ma, H.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, R.T. Ma, X.X. Ma, X.Y. Ma, F.E. Maas, M. Maggiora, S. Maldaner, S. Malde, Q.A. Malik, A. Mangoni, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, T.J. Min, R.E. Mitchell, X.H. Mo, Y.J. Mo, N.Yu. Muchnoi, H. Muramatsu, S. Nakhoul, Y. Nefedov, F. Nerling, I.B. Nikolaev, Z. Ning, S. Nisar, S.L. Olsen, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, P. Patteri, M. Pelizaeus, H.P. Peng, K. Peters, J. Pettersson, J.L. Ping, R.G. Ping, R. Poling, V. Prasad, H. Qi, H.R. Qi, K.H. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, Z. Qian, C.F. Qiao, L.Q. Qin, X.P. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, S.Q. Qu, K.H. Rashid, K. Ravindran, C.F. Redmer, A. Rivetti, V. Rodin, M. Rolo, G. Rong, Ch. Rosner, M. Rump, H.S. Sang, A. Sarantsev, Y. Schelhaas, C. Schnier, K. Schoenning, M. Scodeggio, D.C. Shan, W. Shan, X.Y. Shan, J.F. Shangguan, M. Shao, C.P. Shen, H.F. Shen, P.X. Shen, X.Y. Shen, H.C. Shi, R.S. Shi, X. Shi, X.D. Shi, J.J. Song, W.M. Song, Y.X. Song, S. Sosio, S. Spataro, K.X. Su, P.P. Su, F.F. Sui, G.X. Sun, H.K. Sun, J.F. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, X. Sun, Y.J. Sun, Y.K. Sun, Y.Z. Sun, Z.T. Sun, Y.H. Tan, Y.X. Tan, C.J. Tang, G.Y. Tang, J. Tang, J.X. Teng, V. Thoren, W.H. Tian, I. Uman, B. Wang, C.W. Wang, D.Y. Wang, H.J. Wang, H.P. Wang, K. Wang, L.L. Wang, M. Wang, M.Z. Wang, Meng Wang, W. Wang, W.H. Wang, W.P. Wang, X. Wang, X.F. Wang, X.L. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.Q. Wang, Y.Y. Wang, Z. Wang, Z.Y. Wang, Ziyi Wang, Zongyuan Wang, D.H. Wei, P. Weidenkaff, F. Weidner, S.P. Wen, D.J. White, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, Z. Wu, L. Xia, H. Xiao, S.Y. Xiao, Z.J. Xiao, X.H. Xie, Y.G. Xie, Y.H. Xie, T.Y. Xing, G.F. Xu, Q.J. Xu, W. Xu, X.P. Xu, Y.C. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, Xu Yan, H.J. Yang, H.X. Yang, L. Yang, S.L. Yang, Y.X. Yang, Yifan Yang, Zhi Yang, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, J.S. Yu, T. Yu, C.Z. Yuan, L. Yuan, X.Q. Yuan, Y. Yuan, Z.Y. Yuan, C.X. Yue, A. Yuncu, A.A. Zafar, X. Zeng, Y. Zeng, A.Q. Zhang, B.X. Zhang, Guangyi Zhang, H. Zhang, H.H. Zhang, H.Y. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.W. Zhang, J.Y. Zhang, J.Z. Zhang, Jianyu Zhang, Jiawei Zhang, L.Q. Zhang, Lei Zhang, S. Zhang, S.F. Zhang, Shulei Zhang, X.D. Zhang, X.Y. Zhang, Y. Zhang, Y.H. Zhang, Y.T. Zhang, Yan Zhang, Yao Zhang, Yi Zhang, Z.H. Zhang, Z.Y. Zhang, G. Zhao, J. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, Q. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, J.P. Zheng, Y. Zheng, Y.H. Zheng, B. Zhong, C. Zhong, L.P. Zhou, Q. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, A.N. Zhu, J. Zhu, K. Zhu, K.J. Zhu, S.H. Zhu, T.J. Zhu, W.J. Zhu, Y.C. Zhu, Z.A. Zhu, B.S. Zou, and J.H. Zou
Subjects: Proton, Electromagnetic form factors, Initial state radiation, BESIII, Physics, QC1-999
Abstract: The electromagnetic process e+e−→pp¯ is studied with the initial-state-radiation technique using 7.5 fb−1 of data collected by the BESIII experiment at seven energy points from 3.773 to 4.600 GeV. The Born cross section and the effective form factor of the proton are measured from the production threshold to 3.0 GeV/c2 using the pp¯ invariant-mass spectrum. The ratio of electric and magnetic form factors of the proton is determined from the analysis of the proton-helicity angular distribution.
Published: 2021
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8. Search for invisible decays of a dark photon using annihilation data at BESIII

Author: M. Ablikim, M.N. Achasov, P. Adlarson, M. Albrecht, R. Aliberti, A. Amoroso, M.R. An, Q. An, X.H. Bai, Y. Bai, O. Bakina, R. Baldini Ferroli, I. Balossino, Y. Ban, V. Batozskaya, D. Becker, K. Begzsuren, N. Berger, M. Bertani, D. Bettoni, F. Bianchi, J. Bloms, A. Bortone, I. Boyko, R.A. Briere, A. Brueggemann, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, J.F. Chang, W.L. Chang, G. Chelkov, C. Chen, Chao Chen, G. Chen, H.S. Chen, M.L. Chen, S.J. Chen, S.M. Chen, T. Chen, X.R. Chen, X.T. Chen, Y.B. Chen, Z.J. Chen, W.S. Cheng, S.K. Choi, X. Chu, G. Cibinetto, S.C. Coen, F. Cossio, J.J. Cui, H.L. Dai, J.P. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, Y. Ding, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, S.X. Du, P. Egorov, Y.L. Fan, J. Fang, S.S. Fang, W.X. Fang, Y. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, K. Fischer, M. Fritsch, C. Fritzsch, C.D. Fu, H. Gao, Y.N. Gao, Yang Gao, S. Garbolino, I. Garzia, P.T. Ge, Z.W. Ge, C. Geng, E.M. Gersabeck, A. Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, M. Greco, L.M. Gu, M.H. Gu, Y.T. Gu, C.Y. Guan, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guo, A. Guskov, T.T. Han, W.Y. Han, X.Q. Hao, F.A. Harris, K.K. He, K.L. He, F.H. Heinsius, C.H. Heinz, Y.K. Heng, C. Herold, M. Himmelreich, T. Holtmann, G.Y. Hou, Y.R. Hou, Z.L. Hou, H.M. Hu, J.F. Hu, T. Hu, Y. Hu, G.S. Huang, K.X. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, T. Hussain, N. Hüsken, W. Imoehl, M. Irshad, J. Jackson, S. Jaeger, S. Janchiv, E. Jang, J.H. Jeong, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, Z.K. Jia, H.B. Jiang, S.S. Jiang, X.S. Jiang, Y. Jiang, J.B. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, T. Johansson, N. Kalantar-Nayestanaki, X.S. Kang, R. Kappert, M. Kavatsyuk, B.C. Ke, I.K. Keshk, A. Khoukaz, R. Kiuchi, R. Kliemt, L. Koch, O.B. Kolcu, B. Kopf, M. Kuemmel, M. Kuessner, A. Kupsc, W. Kühn, J.J. Lane, J.S. Lange, P. Larin, A. Lavania, L. Lavezzi, T.T. Lei, Z.H. Lei, H. Leithoff, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H. Li, H.B. Li, H.J. Li, H.N. Li, J.Q. Li, J.S. Li, J.W. Li, Ke Li, L.J. Li, L.K. Li, Lei Li, M.H. Li, P.R. Li, S.X. Li, S.Y. Li, T. Li, W.D. Li, W.G. Li, X.H. Li, X.L. Li, Xiaoyu Li, Z.X. Li, Z.Y. Li, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, A. Limphirat, D.X. Lin, T. Lin, B.J. Liu, C.X. Liu, D. Liu, F.H. Liu, Fang Liu, Feng Liu, G.M. Liu, H. Liu, H.B. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.L. Liu, J.Y. Liu, K. Liu, K.Y. Liu, Ke Liu, L. Liu, Lu Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, T. Liu, W.K. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, Z.H. Lu, C.L. Luo, M.X. Luo, T. Luo, X.L. Luo, X.R. Lyu, Y.F. Lyu, F.C. Ma, H.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, R.T. Ma, X.Y. Ma, Y. Ma, F.E. Maas, M. Maggiora, S. Maldaner, S. Malde, Q.A. Malik, A. Mangoni, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, H. Miao, T.J. Min, R.E. Mitchell, X.H. Mo, N.Yu. Muchnoi, Y. Nefedov, F. Nerling, I.B. Nikolaev, Z. Ning, S. Nisar, Y. Niu, S.L. Olsen, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, Y.P. Pei, M. Pelizaeus, H.P. Peng, K. Peters, J.L. Ping, R.G. Ping, S. Plura, S. Pogodin, V. Prasad, F.Z. Qi, H. Qi, H.R. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, Z. Qian, C.F. Qiao, J.J. Qin, L.Q. Qin, X.P. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, S.Q. Qu, K.H. Rashid, C.F. Redmer, K.J. Ren, A. Rivetti, V. Rodin, M. Rolo, G. Rong, Ch. Rosner, S.N. Ruan, A. Sarantsev, Y. Schelhaas, C. Schnier, K. Schoenning, M. Scodeggio, K.Y. Shan, W. Shan, X.Y. Shan, J.F. Shangguan, L.G. Shao, M. Shao, C.P. Shen, H.F. Shen, X.Y. Shen, B.A. Shi, H.C. Shi, J.Y. Shi, Q.Q. Shi, R.S. Shi, X. Shi, X.D. Shi, J.J. Song, W.M. Song, Y.X. Song, S. Sosio, S. Spataro, F. Stieler, K.X. Su, P.P. Su, Y.J. Su, G.X. Sun, H. Sun, H.K. Sun, J.F. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, X. Sun, Y.J. Sun, Y.Z. Sun, Z.T. Sun, Y.H. Tan, Y.X. Tan, C.J. Tang, G.Y. Tang, J. Tang, L.Y. Tao, Q.T. Tao, M. Tat, J.X. Teng, V. Thoren, W.H. Tian, Y. Tian, I. Uman, B. Wang, B.L. Wang, C.W. Wang, D.Y. Wang, F. Wang, H.J. Wang, H.P. Wang, K. Wang, L.L. Wang, M. Wang, Meng Wang, S. Wang, T. Wang, T.J. Wang, W. Wang, W.H. Wang, W.P. Wang, X. Wang, X.F. Wang, X.L. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.H. Wang, Y.Q. Wang, Yaqian Wang, Z. Wang, Z.Y. Wang, Ziyi Wang, D.H. Wei, F. Weidner, S.P. Wen, C.W. Wenzel, D.J. White, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, X.H. Wu, Y. Wu, Y.J. Wu, Z. Wu, L. Xia, T. Xiang, D. Xiao, G.Y. Xiao, H. Xiao, S.Y. Xiao, Y.L. Xiao, Z.J. Xiao, C. Xie, X.H. Xie, Y. Xie, Y.G. Xie, Y.H. Xie, Z.P. Xie, T.Y. Xing, C.F. Xu, C.J. Xu, G.F. Xu, H.Y. Xu, Q.J. Xu, X.P. Xu, Y.C. Xu, Z.P. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, H.J. Yang, H.L. Yang, H.X. Yang, L. Yang, S.L. Yang, Tao Yang, Y.F. Yang, Y.X. Yang, Yifan Yang, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, T. Yu, X.D. Yu, C.Z. Yuan, L. Yuan, S.C. Yuan, X.Q. Yuan, Y. Yuan, Z.Y. Yuan, C.X. Yue, A.A. Zafar, F.R. Zeng, X. Zeng, Y. Zeng, Y.H. Zhan, A.Q. Zhang, B.L. Zhang, B.X. Zhang, D.H. Zhang, G.Y. Zhang, H. Zhang, H.H. Zhang, H.Y. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.W. Zhang, J.X. Zhang, J.Y. Zhang, J.Z. Zhang, Jianyu Zhang, Jiawei Zhang, L.M. Zhang, L.Q. Zhang, Lei Zhang, P. Zhang, Q.Y. Zhang, Shuihan Zhang, Shulei Zhang, X.D. Zhang, X.M. Zhang, X.Y. Zhang, Y. Zhang, Y.T. Zhang, Y.H. Zhang, Yan Zhang, Yao Zhang, Z.H. Zhang, Z.Y. Zhang, G. Zhao, J. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, Q. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, J.P. Zheng, Y.H. Zheng, B. Zhong, C. Zhong, X. Zhong, H. Zhou, L.P. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, X.Y. Zhou, Y.Z. Zhou, J. Zhu, K. Zhu, K.J. Zhu, L.X. Zhu, S.H. Zhu, S.Q. Zhu, W.J. Zhu, Y.C. Zhu, Z.A. Zhu, B.S. Zou, J.H. Zou, and J. Zu
Subjects: Nuclear and High Energy Physics, High Energy Physics - Experiment (hep-ex), FOS: Physical sciences, High Energy Physics - Experiment
Abstract: We report a search for a dark photon using $14.9$~fb$^{-1}$ of $e^+e^-$ annihilation data taken at center-of-mass energies from 4.13 to 4.60~GeV with the BESIII detector operated at the BEPCII storage ring. The dark photon is assumed to be produced in the radiative annihilation process of $e^+e^-$ and to predominantly decay into light dark matter particles, which escape from the detector undetected. The mass range from 1.5 to 2.9~GeV is scanned for the dark photon candidate, and no significant signal is observed. The mass dependent upper limits at the 90$\%$ confidence level on the coupling strength parameter $\epsilon$ for a dark photon coupling with an ordinary photon vary between $1.6\times 10^{-3}$ and $5.7\times10^{-3}$., Comment: 8 pages, 3 figures
Published: 2023

9. A fast inertial self-adaptive projection based algorithm for solving large-scale nonlinear monotone equations

Author: N. Zhang, J.K. Liu, L.Q. Zhang, and Z.L. Lu
Subjects: Computational Mathematics, Applied Mathematics
Published: 2023
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10. An investigation on structures and strains of gas-ion-implanted and post-implantation-annealed SiC

Author: L.Q. Zhang, Y.G. Chen, H.P. Liu, L. Kang, T.M. Zhang, J.Y. Li, C.L. Xu, X.L. Zhang, Z.N. Ding, and C.H. Zhang
Subjects: Arrhenius equation, Diffraction, Nuclear and High Energy Physics, Materials science, Annealing (metallurgy), 020502 materials, Analytical chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Fluence, Ion, symbols.namesake, Full width at half maximum, chemistry.chemical_compound, Ion implantation, 0205 materials engineering, chemistry, symbols, Silicon carbide, 0210 nano-technology, Instrumentation
Abstract: Silicon carbide (SiC) single crystals were implanted by 5.3-MeV Kr ion, 2.3-MeV Ne ion, and 100-keV He ion with the fluence of 2.0 × 1014, 3.75 × 1015, 3.0 × 1016 ions/cm2, respectively. After ion implantation, SiC specimens were annealed at different temperatures in a high vacuum. The HRXRD measurements were used to characterize the structure damage, strain generation and their recovery processes. HRXRD results reveal that the full width at half maximum (FWHM) of the main diffraction peak broadens and new diffraction peaks appear at lower angles besides the main diffraction peak due to lattice expansions and strain occurrences caused by the implantation. Meanwhile, with increasing annealing temperature, the lattice recovery and strain relaxation occur gradually and several stages of the strain release are presented. Moreover, based on the Arrhenius model, the thermal relaxation activated energy of strains at different temperature ranges was estimated. The mechanisms on strain releases were discussed in detail.
Published: 2020
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11. Effect of hydrogen pre-implantation on formation and growth of bubbles in tungsten under helium ion irradiation

Author: Liping Guo, L.Q. Zhang, Fengfeng Luo, Jiawei Wang, Zhenyu Shen, Chunlan Wang, and Weiping Zhang
Subjects: Nuclear and High Energy Physics, Materials science, Hydrogen, Analytical chemistry, chemistry.chemical_element, Tungsten, Microstructure, Fluence, Ion, chemistry, Transmission electron microscopy, Irradiation, Instrumentation, Helium
Abstract: The microstructure of bubbles induced by single-ion (He or H) and sequential-ion H/He irradiation in tungsten were investigated using transmission electron microscopy (TEM). Specimens were irradiated with 12 keV He+ and 6.7 keV H+ under different fluences at 600 °C. Bubbles were observed after single He+ irradiation and sequential H+/He+ irradiation. Compared with single He+ irradiation, the mean size of bubbles decreased first, and then increased with the increasing fluence of pre-implanted H+ for the sequential H+/He+ irradiation condition. The main effect of pre-implanted H+ with low proportion might enhance bubbles nucleated, and the main effect of pre-implanted H+ with high proportion might make bubbles grow larger. The possible mechanism was discussed in this paper.
Published: 2019
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12. Development of a multiplex PCR assay based on the pilA gene sequences to detect different types of Acidovorax citrulli

Author: W. Guan, X. Bai, T.C. Zhao, Y.W. Yang, Mei Zhao, L.Q. Zhang, P. Qiao, Ron Walcott, and X.X. Zhang
Subjects: Microbiology (medical), 0303 health sciences, 030306 microbiology, Host (biology), Melon, Inoculation, Bacterial fruit blotch, Biology, Microbiology, Pilus, Comamonadaceae, 03 medical and health sciences, Fruit, Multiplex polymerase chain reaction, Fimbriae Proteins, Multiplex Polymerase Chain Reaction, Molecular Biology, Gene, Pathogen, Plant Diseases, 030304 developmental biology
Abstract: Bacterial fruit blotch (BFB) of cucurbits, caused by Acidovorax citrulli, is a major threat to commercial watermelon and melon production worldwide. At present, there are at least two genetically distinct sub-populations (group I and II) of A. citrulli that differ in host preference among cucurbit species and copper sensitivity. In this study, we analyzed the pilA gene sequences of 103 A. citrulli strains from China and other countries. Based on these data, we classified all tested A. citrulli strains into three types. The pilA-based type 1 strains in this study coincided with the previously established group I strains; while the type 2 strains coincided with group II strains. Ten strains that did not cluster with group I or II strains were classified into a new type, designated type 3. Based on differences in pilA sequences, we designed a multiplex PCR assay to distinguish the three A. citrulli pilus types. This multiplex PCR assay has proven to be viable for strain typing of 139 A. citrulli strains and for the detection of this pathogen in artificially inoculated seeds and leaves and naturally infected leaves and fruits. This assay proved to be rapid, accurate, reliable and applicable for early distinction of A. citrulli types associated with BFB epidemics. It may also inform the judicious and environmentally sound use of bactericides, especially copper-based compounds.
Published: 2019
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13. Isotherm-evolution-based interface tracking algorithm for modelling temperature-driven solid-liquid phase-change in multiphase flows

Author: Z. Chen, C. Shu, Y.Y. Liu, L.Q. Zhang, Z.L. Zhang, and Z.Y. Yuan
Subjects: General Engineering, Condensed Matter Physics
Published: 2022
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14. Influence of highly-charged 209Bi33+ irradiation on structure and optoelectric characteristics of GaN epilayer

Author: Y.T. Yang, H. P. Liu, T.X. Yan, L.Q. Zhang, Y. Song, Cuihong Xu, C.H. Zhang, Jixia Li, Jihao Li, Zhaonan Ding, and Yizhun Ma
Subjects: Nuclear and High Energy Physics, Photoluminescence, Materials science, Analytical chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Fluence, Blueshift, symbols.namesake, X-ray photoelectron spectroscopy, 0103 physical sciences, symbols, Irradiation, 010306 general physics, 0210 nano-technology, Luminescence, Spectroscopy, Raman spectroscopy, Instrumentation
Abstract: The microstructure and optoelectric properties of GaN epilayer irradiated by highly-charged 209Bi33+ to different fluences are investigated by means of atomic force microscopy, X-ray photoelectron spectroscopy, Raman scattering spectroscopy and photoluminescence spectroscopy. After Bi33+ irradiation, AFM observation shows the irradiated GaN surface is a swelling and swelling rate nonlinearly increases with increasing ions fluence. XPS analysis reveals the relative content of Ga-N bond reduces and Ga-O, Ga-Ga bonds have been produced as the fluence increases. Raman scattering spectra display the thickness of surface depletion layer increases, free carrier concentration and its mobility decrease generally with an increase in ions fluence. Furthermore, the length of Ga-N bond shortens and lattices experience compressive stress with increasing ions fluence are observed from Raman spectra. Room temperature PL spectra reflect the intensity of yellow luminescence (YL) emission increases and its peak has a blueshift after 1.061 × 1012 Bi33+/cm2 irradiation. Moreover, as the temperature rises, the thermal quenching of YL occurs and its peak position first exhibits a blueshift and then a redshift. Results may be served as a useful reference for HCI to be used in semiconductor fields.
Published: 2017
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15. Genome-wide identification and comparative expression analysis of NBS-LRR-encoding genes uponColletotrichum gloeosporioidesinfection in two ecotypes ofFragaria vesca

Author: K. Duan, L.Q. Zhang, Q.H. Gao, Q.Y. Zhang, and J. Li
Subjects: Genetics, Ecotype, Expression analysis, Identification (biology), Horticulture, Biology, Gene, Genome
Published: 2016
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16. Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness

Author: Xuecheng Wei, Junxi Wang, Nanhong Zhang, Junqin Li, and L.Q. Zhang
Subjects: 010302 applied physics, Materials science, Photoluminescence, Condensed matter physics, Condensed Matter::Other, Mechanical Engineering, Exciton, Multiple quantum, Quantum-confined Stark effect, Dynamics (mechanics), 02 engineering and technology, Activation energy, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Condensed Matter::Materials Science, Mechanics of Materials, 0103 physical sciences, General Materials Science, Turning point, 0210 nano-technology, Recombination
Abstract: Recombination dynamics of InGaN/GaN multiple quantum wells (MQWs) with different well thickness have been studied. From the behaviour of temperature dependent photoluminescence, we find that the activation energy decreases with the well thickness increasing. In addition, with temperature changing from 10K to room temperature, the “W” shape of full width of half maximum is also thickness related, and it becomes more obvious with the well thickness increasing. These results indicate that the dominant recombination dynamics change from exciton localization to quantum confined stark effect with well thickness increasing. From our measurement, the InGaN/GaN MQWs with 3nm thickness seems a turning point, which shows the best optimized optical and structural properties.
Published: 2016
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17. Enhanced Seismic Imaging in Kuqa Foreland Basin, China - A Case History

Author: Y.L. Ouyang, L.Q. Zhang, Z. Tongsheng, Q.C. Zeng, and Y.Y. Song
Subjects: Regional geology, Geophysical imaging, Engineering geology, Inversion (geology), Gemology, Economic geology, Foreland basin, Geology, Seismology, Environmental geology
Abstract: The Kuqa foreland basin is rich in oil and gas resources. However, the images of interest subsalt overthrust structures often have significant distortions due to strong lateral heterogeneity in the shallow and middle-deep velocity. The precise velocity estimation is the key to solve this imaging problem. In this paper, two steps are taken: Firstly, we obtain the accurate shallow velocity with the tomographic inversion based on BP (back propagation) neural network. Secondly, we build the proper middle-deep velocity with the ADCIGs (angle domain common imaging gathers) based tomographic inversion under the constraints of geological knowledge and logging data. The resulting PSDM (prestack depth migration) images are greatly improved and consistent with well data.
Published: 2018
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18. Association between the CYP1A1 polymorphisms and hepatocellular carcinoma: a meta-analysis

Author: Yan Zhang, L.B. Zou, X.L. Teng, H.Y. Ying, B.W. Yu, and L.Q. Zhang
Subjects: Oncology, medicine.medical_specialty, Funnel plot, Carcinoma, Hepatocellular, Genotype, Subgroup analysis, Bioinformatics, Asian People, Risk Factors, Internal medicine, Cytochrome P-450 CYP1A1, Genetics, medicine, Humans, Genetic Predisposition to Disease, Molecular Biology, Genetic Association Studies, business.industry, Liver Neoplasms, General Medicine, Publication bias, Odds ratio, medicine.disease, digestive system diseases, Confidence interval, Increased risk, Hepatocellular carcinoma, Meta-analysis, business
Abstract: Numerous studies have evaluated the association between CYP1A1 gene polymorphisms and hepatocellular carcinoma (HCC) risk. However, the specific association is still controversial. The aim of our study was to clarify the effects of CYP1A1 gene polymorphisms (3801 T＞C and A2455G) on HCC risk by conducting a meta-analysis. We conducted searches of the literature published in PubMed and EMBASE databases up to April 2014. We estimated the pooled odds ratio with its 95% confidence interval to assess the association using a fixed or random-effects model. Publication bias was investigated by the Begg funnel plot. Meta-analysis was performed using the STATA package version 12.0. Meta-analysis results showed no significant association between the CYP1A1 3801 T＞C polymorphism and HCC risk. In a subgroup analysis by nationality, we found a significant association between 3801 T＞C polymorphism and HCC risk in Asians (TT vs TC: OR = 0.77, 95%CI = 0.60-0.99). As for A2455G, the meta-analysis indicated no significant association between the CYP1A1 A2455G polymorphism and HCC risk. In conclusion, the 3801 T＞C polymorphism in the CYP1A1 gene may be related to increased risk of HCC in Asians. Conclusive evidence on the effects of the variants in HCC should be addressed in further studies.
Published: 2015
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19. Broadband Imaing with Different Water Depth Seismic Data

Author: L.Q. Zhang, B. Weng, W.B. Sun, Y.D. Wang, J.M. Zhang, and Z.Y. Zhu
Subjects: Water depth, Broadband, Geology, Seismology
Published: 2017
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20. Surface damage on 6H–SiC by highly-charged Xe q+ ions irradiation

Author: Yuguo Yang, Cuihong Xu, L.Q. Zhang, Y. Song, Jie Gou, Chonghong Zhang, Lijing Han, Jihao Li, Jixia Li, and Yizhun Ma
Subjects: Nuclear and High Energy Physics, Materials science, Nuclear Energy and Engineering, Scattering, Analytical chemistry, General Materials Science, Irradiation, Fourier transform infrared spectroscopy, Mass spectrometry, Stoichiometry, Surface reconstruction, Ion, Amorphous solid
Abstract: Surface damage on 6H–SiC irradiated by highly-charged Xe q+ ( q = 18, 26) ions to different fluences in two geometries was studied by means of AFM, Raman scattering spectroscopy and FTIR spectrometry. The FTIR spectra analysis shows that for Xe 26+ ions irradiation at normal incidence, a deep reflection dip appears at about 930 cm −1 . Moreover, the reflectance on top of reststrahlen band decreases as the ion fluence increases, and the reflectance at tilted incidence is larger than that at normal incidence. The Raman scattering spectra reveal that for Xe 26+ ions at normal incidence, surface reconstruction occurs and amorphous stoichiometric SiC and Si–Si and C–C bonds are generated and original Si–C vibrational mode disappears. And the intensity of scattering peaks decreases with increasing dose. The AFM measurement shows that the surface swells after irradiation. With increasing ion fluence, the step height between the irradiated and the unirradiated region increases for Xe 18+ ions irradiation; while for Xe 26+ ions irradiation, the step height first increases and then decreases with increasing ion fluence. Moreover, the step height at normal incidence is higher than that at tilted incidence by the irradiation with Xe 18+ to the same ion fluence. A good agreement between the results from the three methods is found.
Published: 2014
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21. Irradiation response of ODS ferritic steels to high-energy Ne ions at HIRFL

Author: Yuguo Yang, Y. Song, Akihiko Kimura, L.Q. Zhang, Chonghong Zhang, Jiachao Chen, and Jin Jang
Subjects: Nuclear and High Energy Physics, High energy, Materials science, Nuclear Energy and Engineering, Transmission electron microscopy, Martensite, Metallurgy, General Materials Science, Grain boundary, Irradiation, Substrate (electronics), Ductility, Ion
Abstract: Two kinds of ODS high-Cr ferritic steels (commercial MA956 and an Al-free 16Cr-0.1Ti ODS ferritic steel) and one conventional ferritic/martensitic steel (T122) were irradiated at about 440 degrees C with high-energy Ne-20-ions in HIRFL. Successively increasing doses from 350 to 900 appm of Ne concentration, corresponding to atomic displacement levels from 0.7 to 1.8 dpa, were approached. A nearly uniform distribution of Ne concentration and atomic displacement damage was produced through the thickness of 60 mu m of the specimens by using an energy degrader. Mechanical properties of the specimens were tested with the small-ball punch technique. The test at room temperature shows a less significant ductility loss in the ODS ferritic steel MA956 than in the T122 irradiated to the same dose of 350 appm Ne/0.7 dpa. The test at 500 degrees C shows that the Al-free 16Cr-0.1Ti ODS ferritic steel does not exhibit observable loss of ductility even to the highest dose level (900 appm Ne/1.8 dpa). An investigation with transmission electron microscopy (TEM) shows that voids with a diameter up to 70 nm were formed at grain boundaries in the conventional ferritic/martensitic steel T122 while only smaller bubbles were formed at the oxides/substrate interfaces in the ODS ferritic steel MA956. Mechanisms underlying the difference of irradiation response of the steels are discussed. (C) 2014 Elsevier B.V. All rights reserved.
Published: 2014
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22. The effects of high-energy uranium ion irradiation on Au/n-GaN Schottky diodes

Author: Y.T. Yang, Y. Song, Lei Wang, Jixia Li, Hui Li, Zhen-Ming Lu, Jie Gou, C.H. Zhang, L.Q. Zhang, and Y.C. Meng
Subjects: Nuclear and High Energy Physics, Materials science, Equivalent series resistance, Schottky barrier, Schottky diode, Irradiation, Dielectric, Metalorganic vapour phase epitaxy, Atomic physics, Instrumentation, Deposition (law), Ion
Abstract: The I-V and C-V characteristics of Au/n-GaN Schottky diodes irradiated with 290-MeV U-238(32+) ions are presented. The U ions can penetrate the n-type GaN epi-layer with a thickness about 3 mu m grown on the c-plane of a sapphire substrate using the MOCVD technique, leaving a purely electronic energy deposition. The Au/n-GaN Schottky diodes were irradiated to successively increasing fluences from 1 x 10(9) to 5 x 10(11) ions cm(-2). The measured I-V curves show that the height of the Schottky barrier decreases after irradiation and that the Schottky barrier almost disappears when the ion fluence reaches 5 x 10(9) ions cm(-2). Meanwhile, the irradiation increases the series resistance. The C-V curves show that the capacitance drops sharply when the ion fluence reaches 5 x 10(10) ions cm(-2). The dielectric constant also decreases following the irradiation. The changes of the electrical properties are ascribed to the neutralization of the donor-like surface state and the acceptor-like surface state due to the migration of Au atoms at the interface of Au/n-GaN under energetic U ions irradiations. (C) 2014 Elsevier B.V. All rights reserved.
Published: 2014
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23. Structures and optical properties of Kr23+ and Ne8+-irradiated GaN epi-layers

Author: Y. Song, Yunfan Jin, Y.T. Yang, X.J. Jia, Y.C. Meng, C.H. Zhang, Jie Gou, Cuihong Xu, Jihao Li, and L.Q. Zhang
Subjects: Nuclear and High Energy Physics, Materials science, Band gap, business.industry, Brillouin zone, Full width at half maximum, symbols.namesake, X-ray Raman scattering, Sapphire, symbols, Transmittance, Optoelectronics, Irradiation, business, Instrumentation, Raman scattering
Abstract: Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates were irradiated with 5.3 MeV Kr23+ and 2.3 MeV Ne8+ ions to various fluences. The pristine and the irradiated GaN samples were characterized using high resolution X-ray diffraction (HRXRD), UV-visible transmittance spectrum and Raman scattering spectrum analysis. The HRXRD results show an obvious increase in the FWHM and a decrease in the intensity of the GaN (0002) peak with increasing ion fluences. Meanwhile the UV-visible transmittance spectra show a decrease in the band gap value after irradiation. The Raman scattering spectrum shows that new Raman bands around 300 and 670 cm(-1) appear with increasing ion fluences. The new Raman bands can be ascribed to disorder-activated Raman scattering (DARS) from the highest acoustic-phonon branch and the optical-phonon branch at the brillouin zone boundaries, respectively. (C) 2013 Elsevier B.V. All rights reserved.
Published: 2013
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24. Effects of irradiation of 290MeV U-ions in GaN epi-layers

Author: Jie Gou, Hui Li, C.H. Zhang, Y.T. Yang, L.Q. Zhang, Y. Song, Y.C. Meng, and Jixia Li
Subjects: Nuclear and High Energy Physics, Electron mobility, Materials science, Analytical chemistry, Fluence, Ion, Ionized impurity scattering, symbols.namesake, Swift heavy ion, Hall effect, symbols, Irradiation, Atomic physics, Raman spectroscopy, Instrumentation
Abstract: In the present work, the resistivity, mobility and the carrier density at either room temperature or 77 K in 3-μm-thick n-GaN epi-layers irradiated with 290 MeV 238U32+ ions were tested with Hall measurements. It is found that the carrier mobility at 77 K is lower than that at room temperature in the specimens irradiated to fluences of the 1 × 109 and 1 × 1010 ions/cm2, showing a behavior different from the pristine specimen. The carrier density increases with ion fluence, and is above the dopant concentration when the ion fluence reaches 5 × 1010 ions/cm2. Moreover, the ionized impurity scattering plays a dominant role in the Hall effect after irradiation. A decrease of the ionized impurities due to the recombination of Ga vacancies ( V Ga - 3 ) and the Ga interstitials (Ga(I)) was observed. The irradiation to the fluence of 5 × 1010 ions/cm2 produced N vacancies, which act as a kind of donor making the carrier density increase. The Raman spectra show that the E2 (high) mode shifts to a higher frequency meanwhile the FWTH increases after the irradiation, indicating there is an increase of strain in the irradiated GaN epi-layers. A consistency between the Raman spectra and the HRXRD spectra was found.
Published: 2013
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25. High-temperature oxidation of hot-dip aluminizing coatings on a Ti3Al–Nb alloy and the effects of element additions

Author: L.Q. Zhang, Y. Su, Lin-Jiu Xiao, Y.J. Wang, J.S. Lin, and Zhigang Zhang
Subjects: Materials science, Coating, General Chemical Engineering, Metallurgy, Alloy, engineering, General Materials Science, General Chemistry, engineering.material, Layered structure, Corrosion
Abstract: Hot-dip aluminizing and interdiffusion treatment were used to develop TiAl 3 -rich coatings on a Ti 3 Al–Nb alloy. The addition of Si, Mn, or Ag to the coatings improves the thickness uniformity and reduces the formation of the through-thickness transverse cracks. The element additions promote the formation of dense and continuous Al 2 O 3 -rich scales during the high-temperature oxidation. A layered structure of Al 2 O 3 /TiAl 3 /(TiAl 3 + TiAl 2 )/TiAl/Ti-depleted alloy/alloy from the outside to the inside forms after oxidation at 900 °C without changing the main body of the Si- or Mn-modified coating, and the Ag-modified coating develops a layered structure of Al 2 O 3 /TiAl 3 /(TiAl 3 + TiAl 2 )/(TiAl 2 + TiAl 3 )/TiAl/alloy.
Published: 2012
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26. A HRXRD and nano-indentation study on Ne-implanted 6H–SiC

Author: L.Q. Zhang, Kui Chen, Yuguo Yang, Y. Song, Cuihong Xu, Jixia Li, Jihao Li, X.J. Jia, and Chonghong Zhang
Subjects: Diffraction, Nuclear and High Energy Physics, Materials science, Annealing (metallurgy), Analytical chemistry, chemistry.chemical_element, Bragg peak, Nanoindentation, Ion, Neon, Crystallography, chemistry, Irradiation, Instrumentation, Single crystal
Abstract: Specimens of 6H-SiC single crystal were irradiated at room temperature with 2.3 MeV neon ions to three successively increasing fluences of 2 x 10(14), 1.1 x 10(15) and 3.8 x 10(15) ions/cm(2) and then annealed at room temperature, 500, 700 and 1000 degrees C, respectively. The strain in the specimens was investigated with a high resolution XRD spectrometer with an omega-20 scanning. And the mechanical properties were investigated with the nano-indentation in the continuous stiffness measurement (CSM) mode with a diamond Berkovich indenter. The XRD curves of specimens after irradiation show the diffraction peaks arising at lower angles aside of the main Bragg peak Theta(Bragg), indicating that a positive strain is produced in the implanted layer. In the as-implanted specimens, the strain increases with the increase of the ion fluence or energy deposition. Recovery of the strain occurs on subsequent thermal annealing treatment and two stages of defects evolution process are displayed. An interpretation of defects migration, annihilation and evolution is given to explain the strain variations of the specimens after annealing. The nano-indentation measurements show that the hardness in as-implanted specimens first increases with the increase of the ion fluence, and a degradation of hardness occurs when the ion fluence exceeds a threshold. On the subsequent annealing, the hardness variations are regarded to be a combined effect of the covalent bonding and the pinning effect of defect clusters. (C) 2012 Elsevier B.V. All rights reserved.
Published: 2012
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27. Structural and optical study of irradiation effect in GaN epilayers induced by 308MeV Xe ions

Author: L.Q. Zhang, Limin Zhang, T.D. Ma, B.S. Li, Y. Song, Yuguo Yang, X.J. Jia, Chonghong Zhang, and Yunfan Jin
Subjects: Nuclear and High Energy Physics, Materials science, Photoluminescence, business.industry, Analytical chemistry, Fluence, Ion, symbols.namesake, symbols, Optoelectronics, Irradiation, business, Raman spectroscopy, Luminescence, Instrumentation, Raman scattering, Wurtzite crystal structure
Abstract: Wurtzite GaN epilayers irradiated at room temperature with 308 MeV 129Xe35+ ions to fluences of 1 × 1013 and 3 × 1013 cm−2 have been studied by contact mode atomic force microscopy (AFM), high-resolution X-ray diffraction (HRXRD), micro-Raman scattering and photoluminescence (PL) spectroscopy. The AFM images showed that the surface of GaN films was etched efficiently due to the Xe ion irradiation. The initial step-terrace structure on GaN surface was eliminated completely at a fluence of 3 × 1013 cm−2. HRXRD and Raman results indicated that the Xe ion irradiation led to a homogenous lattice expansion throughout the entire ∼3 μm-thick GaN films. The lattice expansion as well as the biaxial compressive stress of the films was increasing with the increase of ion fluence. PL measurements showed that a dominant yellow luminescence band in the as-grown GaN films disappeared, but a blue and a green luminescence bands were produced after irradiation. Based on these results, the strong electronic excitation effect of 308 MeV Xe ions in GaN is discussed.
Published: 2011
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28. Microstructural evolution upon annealing in Ar-implanted Si

Author: Cuihong Xu, Y.T. Yang, L.Q. Zhang, B.S. Li, and Chonghong Zhang
Subjects: Materials science, Annealing (metallurgy), General Physics and Astronomy, Recrystallization (metallurgy), Surfaces and Interfaces, General Chemistry, Condensed Matter Physics, Surfaces, Coatings and Films, Amorphous solid, symbols.namesake, Crystallography, Ion implantation, Transmission electron microscopy, symbols, Crystallite, Raman spectroscopy, Raman scattering
Abstract: The annealing effects of crystalline silicon (Si) implanted with argon (Ar) ions at a dose of 2 x 10(16) Ar(+)/cm(2) at room temperature and subsequently annealed at 400-1100 degrees C for 30 min were investigated. The samples were analyzed by transmission electron microscopy and Raman spectroscopy. Before and after annealing up to 600 degrees C, an amorphous layer is formed but Ar bubbles are not observed in the damage layer. After annealing at 800 degrees C, argon bubbles are observed together with extended defects. The damage layer evolves into a polycrystalline structure. After annealing at 1100 degrees C; exfoliation occurs on the sample surface, and microtwin lamellas form in the damage layer. Raman scattering revealed that a strong recrystallization occurs from 600 degrees C to 800 degrees C. The results were compared with the case of helium implantation, with particular focus on bubble formation mechanisms. (C) 2011 Elsevier B.V. All rights reserved.
Published: 2011
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29. Annealing ambient on the evolution of He-induced voids in silicon

Author: C.H. Zhang, Huixiao Zhang, Lijing Han, L.Q. Zhang, Yuguo Yang, B.S. Li, Yurong Zhong, Lixing Zhou, Y. Zhang, and Dailian Wang
Subjects: Void (astronomy), Argon, Materials science, Silicon, Annealing (metallurgy), Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, Surfaces and Interfaces, General Chemistry, Condensed Matter Physics, Surfaces, Coatings and Films, Positron annihilation spectroscopy, chemistry, Transmission electron microscopy, Wafer, Atomic physics, Doppler broadening
Abstract: The effects of annealing ambient on the He-induced voids in silicon were investigated using the combination of the Doppler broadening spectroscopy using a variable-energy positron beam and cross-section transmission electron microscopy (XTEM). A 〈1 0 0〉-oriented silicon wafer was implanted with He ions at an energy of 15 keV to a dose of 2 × 10 16 cm −2 at room temperature. Post-implantation, the samples were annealed at a temperature of 1000 °C in the ambient of vacuum, argon, nitrogen, air and oxygen. Positron annihilation spectroscopy (PAS) spectra varied with the annealing ambient. XTEM micrographs demonstrated that the density of He-induced voids could be influenced by the annealing ambient.
Published: 2011
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30. HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3MeV Ne and 5.3MeV Kr ions

Author: Yunfan Jin, X.J. Jia, Chonghong Zhang, Limin Zhang, Lijing Han, L.Q. Zhang, Y. Zhang, and Chaoliang Xu
Subjects: Diffraction, Nuclear and High Energy Physics, Range (particle radiation), Materials science, Scattering, Analytical chemistry, Ion, Layered structure, symbols.namesake, symbols, Irradiation, Atomic physics, Raman spectroscopy, Instrumentation, Raman scattering
Abstract: In(0.15)Ga(0.83)N/GaN bilayers irradiated with 2.3 MeV Ne and 5.3 MeV Kr ions at room temperature were studied by high-resolution X-ray diffraction (HRXRD) and micro-Raman scattering. The Ne ion fluences were in the range from 1 x 10(12) to 1 x 10(15) cm(-2), and the Kr ion fluences were in the range from 1 x 10(11) to 1 x 10(13) cm(-2). Results show that the structures of both In(0.15)Ga(0.85)N and GaN layers remained almost unchanged for increasing fluences up to 1 x 10(13) and 1 x 10(12) cm(-2) for Ne and Kr ion irradiations, respectively. After irradiation to higher fluences, the GaN layer was divided into several damaged layers with different extents of lattice expansion, while the In(0.15)Ga(0.83)N layer exhibited homogenous lattice expansion. The layered structure of GaN and the different responses to irradiation of the GaN and In(0.15)Ga(0.85)N layers are discussed. (C) 2011 Elsevier B.V. All rights reserved.
Published: 2011
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31. Precipitates and defects in silicon co-implanted with helium and oxygen

Author: Yuguo Yang, Y. Zhang, L.Q. Zhang, B.S. Li, H.H. Zhang, and Chonghong Zhang
Subjects: Nuclear and High Energy Physics, Materials science, Silicon, Metallurgy, technology, industry, and agriculture, chemistry.chemical_element, urologic and male genital diseases, Oxygen, Ion implantation, chemistry, Getter, Low density, Composite material, Instrumentation, Oxygen content, Helium
Abstract: Nano-bubbles or voids introduced by He implantation before the oxygen implantation collect oxygen and increase the oxygen content in the sample. Furthermore, nano-bubbles or voids can trap Si interstitials to decrease the dislocations at the edge of precipitates. The density and shape of precipitates formed in the initial stage of the separation-by-implanted-oxygen process are related to the size and density of He-induced vacancy-type defects (nano-bubbles and voids). A high density of nano-bubbles is more efficient in gettering than that of a low density of voids. (C) 2011 Elsevier B.V. All rights reserved.
Published: 2011
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32. Potential energy threshold of surface erosion on GaN by impact of slow highly charged heavy ions

Author: L.Q. Zhang, Lijing Han, Yuguo Yang, Shanliang Song, Yuna Sun, B.S. Li, Chonghong Zhang, and Yunfan Jin
Subjects: Surface (mathematics), Nuclear and High Energy Physics, Range (particle radiation), Work (thermodynamics), Materials science, Atomic force microscopy, Etching rate, Erosion, Atomic physics, Instrumentation, Potential energy, Ion
Abstract: In the present work the erosion behavior on the surface of GaN epi-layer by the impact of various slow highly charged heavy ions (SHCIs, including Arq+. Xeq+ and Pbq+, in two incidence geometries) was investigated. Atomic force microscopy reveals a well-defined threshold of potential energy carried by the incident heavy ions accounting for the surface erosion. This threshold also depends on the projected range of the SHCIs, the longer the projected range, the higher the potential energy required for the onset of surface erosion. And the etched depth is close to a linear function of potential energy deposited, increasing with the potential energy increases. Moreover, the etching rate for 60 degrees off normal incidence is by more than a factor of 2 larger than etching rate for normal incidence, and the etch rate by Xeq+ is larger than by Pbq+ under the same potential energy and incident direction. And a mechanism is discussed. (C) 2010 Elsevier B.V. All rights reserved.
Published: 2011
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33. The effects of the annealing time on helium implantation in Si

Author: L.Q. Zhang, C.H. Zhang, Lixing Zhou, Huixiao Zhang, B.S. Li, Y.T. Yang, and Y. Zhang
Subjects: Nuclear and High Energy Physics, Materials science, Silicon, Hydrogen, Atomic force microscopy, Annealing (metallurgy), viruses, chemistry.chemical_element, Molecular physics, Condensed Matter::Materials Science, Crystallography, chemistry, Transmission electron microscopy, Boron, Instrumentation, Helium, Hillock
Abstract: The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5–10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles.
Published: 2010
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34. Large reversible high-temperature magnetocaloric effect in alloys

Author: Bing Li, Z. D. Zhang, Qiang Zhang, L.Q. Zhang, Wenting Feng, Juan Du, and Y.F. Deng
Subjects: Refrigerant, Paramagnetism, Ferromagnetism, Condensed matter physics, Chemistry, Alloy, Materials Chemistry, engineering, Magnetic refrigeration, Analytical chemistry, General Chemistry, engineering.material, Condensed Matter Physics
Abstract: Accompanied by a second-order paramagnetic to ferromagnetic transition, a large reversible negative Delta S(m) above room temperature has been observed in Ni(50-x)Mn(38+x)Sb(12) alloys besides low-field magnetic entropy change Delta S(m) around/below room temperature. A -Delta S(m)(max) of 5.21 J kg(-1) K(-1) is acquired at 347 K in nominal Ni(49)Mn(39)Sb(12) alloy for a magnetic-field change from 0 to 5 T, with a refrigerant capacity of 184 J kg(-1). The large reversible Delta S(M) and the high reversible refrigerant capacity indicate that Ni(49)Mn(39)Sb(12) alloy may be a promising candidate for magnetic refrigeration above room temperature. (C) 2010 Elsevier Ltd. All rights reserved.
Published: 2010
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35. Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting

Author: L.Q. Zhang, Y.T. Yang, B.S. Li, Huixiao Zhang, Lixing Zhou, Y. Zhang, and C.H. Zhang
Subjects: Nuclear and High Energy Physics, Materials science, Hydrogen, Silicon, Annealing (metallurgy), chemistry.chemical_element, Molecular physics, Fluence, Physics::Geophysics, Condensed Matter::Materials Science, chemistry, Desorption, Physics::Atomic and Molecular Clusters, Physics::Atomic Physics, Surface layer, Growth rate, Instrumentation, Helium
Abstract: A thermodynamic model of the evolution of microcracks in silicon caused by helium and hydrogen co-implantation during annealing was studied. The crack growth rate relies on the amount of helium atoms and hydrogen molecules present. Here, the crack radius was studied as a function of annealing time and temperature, and compared with experimental results. The mean crack radius was found to be proportional to the annealing temperature and the helium and hydrogen implanted fluence. The gas desorption should be considered during annealing process.
Published: 2010
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36. The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy

Author: B.S. Li, L.Q. Zhang, C.H. Zhang, Y.T. Yang, Huixiao Zhang, Y.R. Zhong, D.N. Wang, and Lixing Zhou
Subjects: Nuclear and High Energy Physics, Argon, Materials science, Silicon, Annealing (metallurgy), chemistry.chemical_element, Positron annihilation spectroscopy, Condensed Matter::Materials Science, Ion implantation, Positron, chemistry, Vacancy defect, Physics::Atomic and Molecular Clusters, Atomic physics, Instrumentation, Doppler broadening
Abstract: The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The S-parameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases with annealing temperature from 673 to 1373 K. At low annealing temperatures ranging from room temperature to 673 K, argon-decorated vacancies are formed by argon atoms combining with open-volume defects at inactive positron sites. With further increase of annealing temperature, argon-decorated vacancies dissociate and subsequently migrate and coalesce, leading to an increase of S-parameter. Furthermore, the buried vacancy-layer becomes narrow with increasing annealing temperature. At 1373 K, the buried vacancy-layer moved towards the sample surface.
Published: 2009
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37. RETRACTED: Carbon Nanotube as a Reinforcing Additive for PEEK Composite Filled with Carbon Fiber

Author: L.Q. Zhang and J. Li
Subjects: Materials science, Polymers and Plastics, Mechanics of Materials, Carbon nanofiber, law, Mechanical Engineering, Composite number, Materials Chemistry, Ceramics and Composites, Peek, Carbon nanotube, Composite material, law.invention
Abstract: Retracted
Published: 2009
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38. Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

Author: L.Q. Zhang, Huan Zhang, Yuguo Yang, Chonghong Zhang, Lina Zhou, Bingxuan Li, and Yunchong Fu
Subjects: Nuclear and High Energy Physics, Materials science, Ion implantation, Absorption band, Annealing (metallurgy), Transmission electron microscopy, Analytical chemistry, Sapphire, Surface plasmon resonance, Instrumentation, Single crystal, Nanoclusters
Abstract: In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 °C and then studied using UV–vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles in the sapphire can be obtained from the characteristic surface plasmon resonance (SPR) absorption band in the optical absorption spectra or directly from the transmission electron microscopy. The results of optical absorption spectra indicate that the specimen orientations and pre-implantation also influence the size and the volume fraction of Au nanoparticles formed. Theoretical calculations using Maxwell–Garnett effective medium theory supply a good interpretation of the optical absorption results.
Published: 2009
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39. Three-dimensional geological modeling of Longyou grotto No. 3 with terrestrial laser scanning

Author: Anika Braun, R.H. Xiao, Z.F. Yang Z.H. Han, X.L. Wang, J. Zhou, and L.Q. Zhang
Subjects: Terrestrial laser scanning, Geology, Remote sensing
Published: 2015
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40. Analysis of engineering geological problems in ancient man-made underground rock structures in Longyou, China

Author: L.Q. Zhang, L.H. Li, G. Chen Y. Fu, Z.F. Yang, and Q. Gao
Subjects: Mining engineering, China, Geology
Published: 2015
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41. Triggers of rockfall on a slope related to large ancient underground caves cultural heritage (China)

Author: L.Q. Zhang Z.F. Yang and X.L. Wang
Subjects: Cultural heritage, geography, Rockfall, geography.geographical_feature_category, Cave, China, Archaeology
Published: 2015
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42. Discovery and recognition of scientific values of forty-nine large scale ancient underground engineering in Zhejiang Province

Author: Q.L. Zeng, Z.F. Yang, L.Q. Zhang, W.T. He, J. Zhou, Q. Gao, G.M. Guo Z.J. Zhang, J.W. Zhu, J.X. Ding, Y.J. Shang, and L.H. Li
Subjects: Plucking, Geography, Salt mine, Tourist attraction, Ancient time, World heritage, Post office, Forty Nine, Archaeology, Tourism
Abstract: Underground quarrying activity emerged about 1300 years ago in Israel. The bell-shaped caverns of Bet Guvrin that have been studied by Haztor et al. are shown in Figure 1a. The investigation revealed that the caverns have a maximum span of 40 m. The Wieliczka salt mine in Poland, a world heritage site, is the remnant of a large salt mine initially excavated 700 years ago. It is now a renowned tourist attraction, and in this grand opening, structures such as restaurant, post office, church, and thermal1 INTRODUCTIONLarge-scale ancient underground engineering is the product of productive or religious activity in ancient time. As immovable cultural relics, these engineering activities, generally in the form of cavern complexes, are of extraordinary historic, artistic and scientific values. Owing to the stone culture and complicated structures they have, some of the cavern complexes have been or are being developed as tourist attractions, visited by millions of tourists.
Published: 2015
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43. Enhancing effects of cleaner additives WEC on coated white board paper

Author: F. Gao, Y.Q. Zhu, W.H. Xia Z.J. Zhang, and L.Q. Zhang
Subjects: Materials science, Composite material, White board
Published: 2015
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44. Technique and Application of Near-Surface Q Estimation and Compensation

Author: L.Q. Zhang, Y.L. Liu, T.J. Zeng, R. Li, B.Q. Zhang, Q.G. Liu, and H.S. Sun
Subjects: Regional geology, Anelastic attenuation factor, Engineering geology, Acoustics, Attenuation, Phase (waves), Waveform, Absorption (electromagnetic radiation), Geomorphology, Geology, Compensation (engineering)
Abstract: Absorption & attenuation is one of the main factors to lower the seismic data resolution and the absorption & attenuation of near surface is much more serious than that of the subsurface. Because near-surface Q model is very difficult to establish, conventional absorption compensation technique always aims at how to compensate the subsurface strata Q effects and seldom considers the near surface effects. This paper introduces a method to establish near-surface Q model by joint application of uphole and seismic data, and then wavefield continuation with fine gain controlled of Q compensation is used to pre-stack seismic data to recover the absorption & attenuation of near surface. With these methods consistency of seismic signal waveform and phase is enhanced, frequency bandwidth is broadened and resolution is improved that show our method is effective and practical.
Published: 2014
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45. Influence of cyclic softening on the energy release rate of an edge crack under simple tension

Author: William V. Mars, H. Yang L.Q. Zhang, and X.Z. Cheng
Subjects: Strain energy release rate, Materials science, Tension (physics), Simple (abstract algebra), Cyclic softening, Edge (geometry), Composite material, GeneralLiterature_REFERENCE(e.g.,dictionaries,encyclopedias,glossaries)
Published: 2013
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46. Impedance analysis of EGTA‐treated primary rat alveolar epithelial cell monolayers (RAECM)

Author: Kwang-Jin Kim, Zea Borok, L.Q. Zhang, and Edward D. Crandall
Subjects: EGTA, chemistry.chemical_compound, Chemistry, Alveolar epithelial cell, Monolayer, Genetics, Biophysics, Molecular Biology, Biochemistry, Biotechnology
Published: 2007
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47. Contribution of cyclic nucleotide‐gated (CNG) cation channels to active ion absorption across primary rat alveolar epithelial cell monolayers (RAECM)

Author: Zea Borok, Edward D. Crandall, Kwang-Jin Kim, and L.Q. Zhang
Subjects: Absorption (pharmacology), Primary (chemistry), Chemistry, Alveolar epithelial cell, Inorganic chemistry, Biochemistry, Ion, Cyclic nucleotide, chemistry.chemical_compound, Monolayer, Genetics, Biophysics, Molecular Biology, Biotechnology
Published: 2007
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48. Recognition of courtesy amounts on bank checks based on a segmentation approach

Author: L.Q. Zhang and Ching Y. Suen
Subjects: Contextual image classification, business.industry, Computer science, Segmentation-based object categorization, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, Scale-space segmentation, Pattern recognition, Image segmentation, Handwriting recognition, Segmentation, Artificial intelligence, business, Classifier (UML), Cursive
Abstract: A segmentation based courtesy amount recognition (CAR) system is presented in this paper. A two-stage segmentation module has been proposed, namely the global segmentation stage and the local segmentation stage. At the global segmentation stage, a courtesy amount is coarsely segmented into sub-images according to the spatial relationships of the connected components. These sub-images are then verified by the recognition module and the rejected sub-images are sequentially split using contour analysis at the local segmentation stage. Two neural network classifiers are combined into a recognition module. The isolated digit classifier divides the input patterns into ten numeral classes (0-9), while the holistic double zeros classifier recognizes the cursive and touching double zeros. Experimental results show that the system reads 66.5% bank checks correctly at 0% misreading rate.
Published: 2003
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49. The levels of serum TC, TG and TC/HDL-C ratio and associated factors in Chinese rural elderly population

Author: L.Q. Zhang, Hongyan Zhang, X.X. Huang, Xiaolong Wang, Xiao Wang, Jin Xu, and G.L. Liu
Subjects: medicine.medical_specialty, Endocrinology, business.industry, Elderly population, Internal medicine, Medicine, Cardiology and Cardiovascular Medicine, business
Published: 2009
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50. An application of the Rock Engineering System (RES) methodology to rockfall hazard assessment on the Chengdu-Lhasa Highway, China

Author: L.Q. Zhang, Z.F. Yang, Q.L. Liao, and J. Chen
Subjects: Geotechnical Engineering and Engineering Geology
Published: 2004
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