1. Correlated topographic and structural modification on Si surface during multi-shot femtosecond laser exposures: Si nanopolymorphs as potential local structural nanomarkers
- Author
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Irina N. Saraeva, Eduard Ageev, A. A. Ionin, D. V. Pankin, A. O. Levchenko, E.V. Borisov, Sergey I. Kudryashov, Andrey A. Rudenko, Demid A. Kirilenko, D.V. Potorochin, L.V. Nguyen, Pavel N. Brunkov, and Vadim P. Veiko
- Subjects
Materials science ,Annealing (metallurgy) ,General Physics and Astronomy ,02 engineering and technology ,Surface finish ,01 natural sciences ,symbols.namesake ,Optics ,0103 physical sciences ,Wafer ,Spallation ,010306 general physics ,business.industry ,Surfaces and Interfaces ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Nanocrystalline material ,Surfaces, Coatings and Films ,Amorphous solid ,Femtosecond ,symbols ,Optoelectronics ,0210 nano-technology ,business ,Raman spectroscopy - Abstract
High-pressure Si-XII and Si-III nanocrystalline polymorphs, as well as amorphous Si phase, appear consequently during multi-shot femtosecond-laser exposure of crystalline Si wafer surface above its spallation threshold along with permanently developing quasi-regular surface texture (ripples, microcones), residual hydrostatic stresses and subsurface damage, which are characterized by scanning and transmission electron microscopy, as well as by Raman micro-spectroscopy. The consequent yields of these structural Si phases indicate not only their spatially different appearance, but also potentially enable to track nanoscale, transient laser-induced high-pressure, high-temperature physical processes – local variation of ablation mechanism and rate, pressurization/pressure release, melting/resolidification, amorphization, annealing – versus cumulative laser exposure and the related development of the surface topography.
- Published
- 2017
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