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23 results on '"Lan, Yaoyao"'

2. On the Ulam’s Type Stability of Fuzzy Volterra and Fredholm Integral Equations of the Second Kind

Author

Shen, Yonghong, Lan, Yaoyao, Chen, Hongbing, Kacprzyk, Janusz, Series Editor, Pal, Nikhil R., Advisory Editor, Bello Perez, Rafael, Advisory Editor, Corchado, Emilio S., Advisory Editor, Hagras, Hani, Advisory Editor, Kóczy, László T., Advisory Editor, Kreinovich, Vladik, Advisory Editor, Lin, Chin-Teng, Advisory Editor, Lu, Jie, Advisory Editor, Melin, Patricia, Advisory Editor, Nedjah, Nadia, Advisory Editor, Nguyen, Ngoc Thanh, Advisory Editor, Wang, Jun, Advisory Editor, Meng, Hongying, editor, Lei, Tao, editor, Li, Maozhen, editor, Li, Kenli, editor, Xiong, Ning, editor, and Wang, Lipo, editor

Published
2021
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9. The Superjunction Device with Optimized Process Window of Breakdown Voltage

Author

Lan Yaoyao, Ren Min, Zehong Li, Rongyao Ma, Gao Wei, Bo Zhang, Xin Zhang, Lv-Qiang Li, and Fang Zheng

Subjects
Materials science, Field (physics), business.industry, Doping, Superposition principle, Condensed Matter::Superconductivity, Electric field, MOSFET, Microelectronics, Breakdown voltage, Optoelectronics, Condensed Matter::Strongly Correlated Electrons, Process window, business
Abstract

In order to improve the process window of breakdown voltage (BV), a vertical variable doping (VVD) superjunction MOSFET (SJ-MOS) is proposed. The charge superposition principle is used to analyze the change of electric field (e- field) caused by the gradient doping of pillars. Compared with the uniform doping SJ-MOS, it is shown that the negative doping gradient in P-pillar and the positive doping gradient in N-pillar can make the distribution of e- field more uniform, which is beneficial to the expansion of the BV process window.

Published
2020

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