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3. All-sky Measurement of the Anisotropy of Cosmic Rays at 10 TeV and Mapping of the Local Interstellar Magnetic Field

Author

HAWC Collaboration, Abeysekara, A. U., Brisbois, C., Becker, K. -H., Tjus, J. Becker, BenZvi, S., Berley, D., Bernardini, E., Besson, D. Z., Binder, G., Bindig, D., Blaufuss, E., Blot, S., Capistrán, T., Bohm, C., Börner, M., Bos, F., Böser, S., Botner, O., Bourbeau, E., Bourbeau, J., Bradascio, F., Braun, J., Bretz, Hans-Peter, Carramiñana, A., Bron, S., Brostean-Kaiser, J., Burgman, A., Busse, R. S., Carver, T., Chen, C., Cheung, E., Chirkin, D., Clark, K., Classen, L., Casanova, S., Collin, G. H., Conrad, J. M., Coppin, P., Correa, P., Cowen, D. F., Cross, R., Dave, P., Day, M., de André, J. P. A. M., De Clercq, C., Cotti, U., DeLaunay, J. J., Dembinski, H., Deoskar, K., De Ridder, S., Desiati, P., de Vries, K. D., de Wasseige, G., de With, M., DeYoung, T., Díaz-Vélez, J. C., Cotzomi, J., Dujmovic, H., Dunkman, M., Dvorak, E., Eberhardt, B., Ehrhardt, T., Eichmann, B., Eller, P., Evenson, P. A., Fahey, S., Fazely, A. R., Felde, J., Filimonov, K., Finley, C., Franckowiak, A., Friedman, E., Fritz, A., Gaisser, T. K., Gallagher, J., Ganster, E., Garrappa, S., De León, C., Gerhardt, L., Ghorbani, K., Giang, W., Glauch, T., Glüsenkamp, T., Goldschmidt, A., Gonzalez, J. G., Grant, D., Griffith, Z., Haack, C., De la Fuente, E., Hallgren, A., Halve, L., Halzen, F., Hanson, K., Hebecker, D., Heereman, D., Helbing, K., Hellauer, R., Hickford, S., Hignight, J., Dichiara, S., Hill, G. C., Hoffman, K. D., Hoffmann, R., Hoinka, T., Hokanson-Fasig, B., Hoshina, K., Lankinen, Aapo, Huang, F., Huber, M., Hultqvist, K., Alfaro, R., DuVernois, M. A., Hünnefeld, M., Hussain, R., In, S., Iovine, N., Ishihara, A., Jacobi, Emanuel, Japaridze, G. S., Jeong, M., Jero, K., Jones, B. J. P., Espinoza, C., Kalaczynski, P., Kang, W., Kappes, A., Kappesser, D., Karg, T., Karle, A., Katz, U., Kauer, M., Keivani, A., Kelley, J. L., Fiorino, D. W., Kheirandish, A., Kim, J., Kintscher, T., Kiryluk, J., Kittler, T., Klein, S. R., Koirala, R., Kolanoski, H., Köpke, L., Kopper, C., Fleischhack, H., Kopper, S., Koskinen, D. J., Kowalski, M., Krings, K., Kroll, M., Krückl, G., Kunwar, S., Kurahashi, N., Kyriacou, A., Labare, M., Fraija, N., Lanfranchi, J. L., Larson, M. J., Lauber, F., Leonard, K., Leuermann, M., Liu, Q. R., Lohfink, E., Mariscal, C. J. Lozano, Lu, L., Lünemann, J., Galván-Gámez, A., Luszczak, W., Madsen, J., Maggi, G., Mahn, K. B. M., Makino, Y., Mancina, S., Mariş, I. C., Maruyama, R., Mase, K., Maunu, R., García-González, J. A., Meagher, K., Medici, M., Medina, A., Meier, M., Menne, T., Merino, G., Meures, T., Miarecki, S., Micallef, J., Momenté, G., González, M. M., Montaruli, T., Moore, R. W., Moulai, M., Nagai, R., Nahnhauer, R., Nakarmi, P., Naumann, U., Neer, G., Niederhausen, H., Nowicki, S. C., Goodman, J. A., Nygren, D. R., Pollmann, A. Obertacke, Olivas, A., O'Murchadha, A., O'Sullivan, E., Palczewski, T., Pandya, H., Pankova, D. V., Peiffer, P., Heros, C. Pérez de los, Hampel-Arias, Z., Pieloth, D., Pinat, E., Pizzuto, A., Plum, M., Price, P. B., Przybylski, G. T., Raab, C., Raissi, A., Rameez, M., Rauch, L., Alvarez, C., Harding, J. P., Rawlins, K., Rea, I. C., Reimann, R., Relethford, B., Renzi, G., Resconi, E., Rhode, W., Richman, M., Robertson, S., Rongen, M., Hernandez, S., Rott, C., Ruhe, T., Ryckbosch, D., Rysewyk, D., Safa, I., Herrera, S. E. Sanchez, Sandrock, A., Sandroos, J., Santander, M., Sarkar, S., Hona, B., Satalecka, K., Schaufel, M., Schlunder, P., Schmidt, T., Schneider, A., Schneider, J., Schöneberg, S., Schumacher, L., Sclafani, S., Hueyotl-Zahuantitla, F., Seckel, D., Seunarine, S., Soedingrekso, J., Soldin, D., Song, M., Spiczak, G. M., Spiering, C., Stachurska, J., Stamatikos, M., Stanev, T., Iriarte, A., Stasik, Alexander, Stein, R., Stettner, J., Steuer, A., Stezelberger, T., Stokstad, R. G., Stößl, A., Strotjohann, N. L., Stuttard, T., Sullivan, G. W., Jardin-Blicq, A., Sutherland, M., Taboada, I., Tenholt, F., Ter-Antonyan, S., Terliuk, A., Tilav, S., Tobin, M. N., Tönnis, C., Toscano, S., Tosi, D., Joshi, V., Tselengidou, M., Tung, C. F., Turcati, A., Turcotte, R., Turley, C. F., Ty, B., Unger, E., Elorrieta, M. A. Unland, Usner, Marcel, Vandenbroucke, J., Lara, A., Van Driessche, W., van Eijk, D., van Eijndhoven, N., Vanheule, S., van Santen, J., Vraeghe, M., Walck, C., Wallace, A., Wallraff, M., Wandkowsky, N., Vargas, H. León, Wandler, F. D., Watson, T. B., Weaver, C., Weiss, M. J., Weldert, J., Wendt, C., Werthebach, J., Westerhoff, S., Whelan, B. J., Whitehorn, N., Luis-Raya, G., Wiebe, K., Wiebusch, C. H., Wille, L., Williams, D. R., Wills, L., Wolf, M., Wood, J., Wood, T. R., Woolsey, E., Woschnagg, K., Álvarez, J. D., Malone, K., Wrede, G., Xu, D. L., Xu, X. W., Xu, Y., Yanez, J. P., Yodh, G., Yoshida, S., Yuan, T., IceCube Collaboration, Marinelli, S. S., Martínez-Castro, J., Martinez, O., Matthews, J. A., Miranda-Romagnoli, P., Moreno, E., Mostafá, M., Nellen, L., Newbold, M., Arceo, R., Nisa, M. U., Noriega-Papaqui, R., Pérez-Pérez, E. G., Pretz, J., Ren, Z., Rho, C. D., Rivière, C., Rosa-González, D., Rosenberg, M., Salazar, H., Arteaga-Velázquez, J. C., Greus, F. Salesa, Sandoval, A., Schneider, M., Schoorlemmer, H., Sinnis, G., Smith, A. J., Surajbali, P., Tollefson, K., Torres, I., Rojas, D. Avila, Villaseño, L., Weisgarber, T., Zepeda, A., Zhou, H., Techn. Koordinator:, J. Spengler, Aartsen, M. G., Ackermann, M., Adams, J., Belmont-Moreno, E., Aguilar, J. A., Ahlers, M., Ahrens, M., Altmann, D., Andeen, K., Anderson, T., Ansseau, I., Anton, G., Argüelles, C., Auffenberg, J., BenZvi, S. Y., Axani, S., Backes, P., Bagherpour, H., Bai, X., Barbano, A., Barron, J. P., Barwick, S. W., Baum, V., Bay, R., Beatty, J. J., Physics, and Elementary Particle Physics

Subjects
010504 meteorology & atmospheric sciences, TeV [cosmic radiation], magnetic field, Astrophysics, anisotropy [cosmic radiation], 01 natural sciences, cosmic radiation: TeV, IceCube, 3-DIMENSIONAL FEATURES, propagation, Anisotropy, 010303 astronomy & astrophysics, media_common, High Energy Astrophysical Phenomena (astro-ph.HE), Physics, angular dependence [power spectrum], Astrophysics::Instrumentation and Methods for Astrophysics, ENERGY-SPECTRUM, Magnetic field, astroparticle physics, cosmic rays, ISM: magnetic fields, observatory, power spectrum: angular dependence, Physique des particules élémentaires, Astrophysics - High Energy Astrophysical Phenomena, media_common.quotation_subject, Astrophysics::High Energy Astrophysical Phenomena, FOS: Physical sciences, Cosmic ray, LARGE-SCALE ANISOTROPY, Astrophysics::Cosmology and Extragalactic Astrophysics, energy [particle], cosmic radiation: anisotropy, 0103 physical sciences, ARRIVAL DIRECTIONS, Astrophysics::Galaxy Astrophysics, 0105 earth and related environmental sciences, INTENSITY, particle: energy, magnetic fields [ISM], Spectral density, Astronomy and Astrophysics, OUTER HELIOSPHERE, Interstellar medium, Dipole, Physics and Astronomy, Space and Planetary Science, Sky, ROTATION, ddc:520, HAWC, Energy (signal processing), dipole
Abstract

We present the first full-sky analysis of the cosmic ray arrival direction distribution with data collected by the High-Altitude Water Cherenkov and IceCube observatories in the northern and southern hemispheres at the same median primary particle energy of 10 TeV. The combined sky map and angular power spectrum largely eliminate biases that result from partial sky coverage and present a key to probe into the propagation properties of TeV cosmic rays through our local interstellar medium and the interaction between the interstellar and heliospheric magnetic fields. From the map, we determine the horizontal dipole components of the anisotropy δ 0h = 9.16 ×10 -4 and δ 6h = 7.25 ×10 -4 (±0.04 × 10 -4 ). In addition, we infer the direction (229.°2 ± 3.°5 R.A. 11.°4 ± 3.°0 decl.) of the interstellar magnetic field from the boundary between large-scale excess and deficit regions from which we estimate the missing corresponding vertical dipole component of the large-scale anisotropy to be δN ∼ -3.97 +1.0 -2.0 × 10 -4 ., 0, SCOPUS: ar.j, info:eu-repo/semantics/published

Published
2019
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5. Following the kinetics of a chemical reaction in ultrathin supported polymer films by reliable mass density determination with X-ray reflectivity

Author

Kontturi, Eero and Lankinen, Aapo

Subjects
Chemical reactions -- Analysis, X-ray spectroscopy -- Usage, Chemistry
Abstract

Numerous modern functionalities with ultrathin polymer films have involved chemical reactions within the films. X-ray reflectivity is used for following the chemical reactions by a reliable determination of mass density, which is feasible within certain thickness constraints.

Published
2010

6. Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications

Author

O'Reilly, Lisa, Mitra, Anirban, Lucas, Francis Olabanji, Natarajan, Gomathi, McNally, Patrick J., Daniels, Stephen, Lankinen, Aapo, Lowney, Donnacha, Bradley, Ann Louise, and Cameron, David C.

Subjects
Semiconductors, CuCl, Optoelectronics
Abstract

The use of co-evaporation of ZnCl2 with CuCl in order to achieve n-type conductivity in CuCl is reported herein. Linear current-voltage (IV) characteristics in the range of ±4V have been measured using Cu-Au electrical contacts. Room temperature Hall effect measurements show some evidence of a mixed conduction mechanism. On average the samples exhibit n-type conductivity with a bulk electron carrier concentration n ~ 1 x 1016 cm-3 and Hall mobility ~ 29 cm2v-1s-1 for a CuCl sample doped with a nominal 3 mole % ZnCl2. By use of an in situ CaF2 capping layer, transmission > 90% is achieved. At room temperature a strong Z3 free excitonic emission occurs at ~385 nm using both photoluminescence and x-ray excited optical luminescence, indicating the high optical quality of the doped material.

Published
2007

7. Structural and electrical characterisation of ion-implanted strained silicon

Author

Horan, Ken, Lankinen, Aapo, O'Reilly, Lisa, Bennett, N.S., McNally, Patrick J., Sealy, B.J., Cowern, N.E.B., Tuomi, Tiinamaija, Horan, Ken, Lankinen, Aapo, O'Reilly, Lisa, Bennett, N.S., McNally, Patrick J., Sealy, B.J., Cowern, N.E.B., and Tuomi, Tiinamaija

Abstract

The production of low resistance ultra-shallow junctions for e.g. source/drain extensions using low energy ion-implantation will be required for future CMOS devices [1]. This architecture will require implants which demonstrate high electrical activation and nm range depth profiles. We investigate the properties of Sb implants in tensile strained silicon due to their potential to satisfy these criteria, and the carrier mobility enhancements associated with tensile strained silicon. Low energy (in this case 2 keV)implants coupled with Sb’s large atomic radius are capable of providing ~ 10 nm implant depths. In addition to this, Sb, in the presence of tensile strain demonstrates higher electrical activation when compared with the more traditional n-type dopant As [2]. We now report on the initial results of an ongoing systematic study over a wide silicon tensile strain range (from 0.4 to 1.25 % strain) in order to establish clear strain-related trends. Graded Si1-xGex virtual substrates (VS) with are used as template substrates, upon which tensile strained Si layers are grown. Prior to implantation the 0.1 ≤ x ≤ 0.3 quality of the strained layer and SiGe buffer is assessed using UV micro-Raman spectroscopy (μRS), synchrotron x-ray topography (SXRT) and high resolution x-ray diffraction (HR-XRD). For measurements of strain following implantation, HR-XRD is found to be more useful than μRS due to additional carrier-concentration induced Si Raman peak shifts in the Raman spectra , these obscure small changes in the strain state, and result from the degenerate doping levels achieved in these samples (~7x1020 cm-3). Using x-ray techniques, we find clear evidence of tilt in the SiGe VS at Ge concentrations > 23% (i.e. ε > 0.9 %), this tilt impacts on the quality of the strained Si. In addition to this, stacking faults have been detected non-destructively in the higher strain samples (ε = 1.25%, VS = Si0.7Ge0.3) using SXRT in transmission mode.

Published
2008

8. Constraints on micro-Raman strain metrology for highly doped strained Si materials

Author

O'Reilly, Lisa, Horan, Ken, McNally, Patrick J., Bennett, N.S., Cowern, N.E.B., Lankinen, Aapo, Sealy, B.J., Gwilliam, R.M., Noakes, T.C.Q., Bailey, P., O'Reilly, Lisa, Horan, Ken, McNally, Patrick J., Bennett, N.S., Cowern, N.E.B., Lankinen, Aapo, Sealy, B.J., Gwilliam, R.M., Noakes, T.C.Q., and Bailey, P.

Abstract

Ultra-violet (UV), low penetration depth, micro-Raman spectroscopy and high resolution X-ray diffraction (HRXRD) are utilised as complementary, independent stress characterisation tools for a range of strained Si samples doped by low energy (2 keV) Sb ion implantation. Following dopant implantation good agreement is found between the magnitudes of strain measured by the two techniques. However, following dopant activation by annealing, strain relaxation is detected by HRXRD but not by micro-Raman. This discrepancy mainly arises from an anomalous red shift in the Si Raman peak position originating from the high levels of doping achieved in the samples. This has serious implications for the use of micro-Raman spectroscopy for strain characterisation of highly doped strained Si complementary metal-oxide semiconductor devices and structures therein. We find a direct correlation between the Si Raman shift and peak carrier concentration measured by the differential Hall technique, which indicates that UV micro-Raman may become a useful tool for non-destructive dopant characterisation for ultra-shallow junctions in these Si-based materials.

Published
2008

9. Simulation of semiconductor x-ray detectors

Author

Sipilä, Heikki, Teknillinen korkeakoulu, Helsinki University of Technology, Sähkö- ja tietoliikennetekniikan osasto, Tuomi, Turkka, Lankinen, Aapo, Sipilä, Heikki, Teknillinen korkeakoulu, Helsinki University of Technology, Sähkö- ja tietoliikennetekniikan osasto, Tuomi, Turkka, and Lankinen, Aapo

Abstract

Työssä kehitettiin tietokoneohjelma, jolla voidaan laskea puolijohteiden perusyhtälöiden avulla p-i-n -röntgendetektorien virrantiheyspotentiaalikäyriä. Ohjelmalla voidaan myös laskea diodin sisäisen potentiaalin muotoa ja varauksenkuljettajakonsentraatioita diodin reunasta mitatun matkan funktiona. Ohjelma laskee yksiulotteisia puolijohderakenteita, ja se perustuu puolijohteiden perusyhtälöistä diskretoimalla muodostettuun differenssiyhtälöryhmään. Differenssiyhtälöryhmä ratkaistaan moniulotteisen Newtonin iteraation avulla, mihin käytetään Gaussin algoritmiin perustuvaa lineaarisen yhtälöryhmän ratkaisualgoritmia. Piistä tehdylle p-i-n -diodille laskettuja numeerisia tuloksia verrattiin analyyttisiin, ja todettiin, että analyyttisen mallin puutteet huomioiden tulokset olivat hyvin yhteensopivia. Shockley-Read-Hall -rekombinaation ja diodin i-kerroksen paksuuden todettiin vaikuttavan piidiodin vuotovirrantiheyteen voimakkaasti. Heterorakenteita tutkittiin kuvitteellisen pii-germanium-pii-diodin ja fysikaalisesti realistisen galliumarsenidi-germanium-galliumarsenidi -diodin avulla. Heterorakenteen todettiin pienentävän molemmissa tapauksissa diodin vuotovirrantiheyttä verrattuna pelkästään germaniumista tehtyyn diodiin. Lisäksi i-kerroksen paksuuden vaikutus vuotovirtaan selvitettiin.

Published
2003

10. An Evaluation of an Automated Detection Algorithm to Count Defects Present in X-Ray Topographical Images of SiC Wafers

Author

Brazil, Ian, primary, McNally, Patrick J., additional, O'Reilly, Lisa, additional, Danilewsky, Andreas, additional, Tuomi, Turkka O., additional, Lankinen, Aapo, additional, Säynätjoki, Antti, additional, Simon, Rolf, additional, Soloviev, Stanislav, additional, Rowland, Larry B., additional, and Sandvik, Peter M., additional

Published
2007
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