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2 results on '"Laura de Kort"'

1. Combined Effect of Halogenation and SiO2 Addition on the Li-Ion Conductivity of LiBH4

Author

Valerio Gulino, Laura de Kort, Peter Ngene, Petra de Jongh, and Marcello Baricco

Subjects
complex hydrides, solid-state electrolytes, LiBH4, Inorganic chemistry, QD146-197
Abstract

In this work, the combined effects of anion substitution (with Br− and I−) and SiO2 addition on the Li-ion conductivity in LiBH4 have been investigated. Hexagonal solid solutions with different compositions, h-Li(BH4)1−α(X)α (X = Br, I), were prepared by ball milling and fully characterized. The most conductive composition for each system was then mixed with different amounts of SiO2 nanoparticles. If the amount of added complex hydride fully fills the original pore volume of the added silica, in both LiBH4-LiBr/SiO2 and LiBH4-LiI/SiO2 systems, the Li-ion conductivity was further increased compared to the h-Li(BH4)1−α(X)α solid solutions alone. The use of LiBH4-LiX instead of LiBH4 in composites with SiO2 enabled the development of an optimal conductive pathway for the Li ions, since the h-Li(BH4)1−α(X)α possesses a higher conductivity than LiBH4. In fact, the Li conductivity of the silica containing h-Li(BH4)1−α(X)α is higher than the maximum reached in LiBH4-SiO2 alone. Therefore, a synergetic effect of combining halogenation and interface engineering is demonstrated in this work.

Published
2023
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2. Submicrometer Top-Gate Self-Aligned a-IGZO TFTs by Substrate Conformal Imprint Lithography

Author

Thijs Bel, Gerwin H. Gelinck, Laura De Kort, Roy Verbeek, Joris de Riet, Mamidala Saketh Ram, Auke Jisk Kronemeijer, and Molecular Materials and Nanosystems

Subjects
Materials science, Lithography, Thin films, nanoimprint, Field effect transistors, 01 natural sciences, Nanoimprint lithography, law.invention, Amorphous indium gallium zinc oxides (a igzo), law, self-aligned thin-film transistors (SA TFTs), 0103 physical sciences, Zinc oxide, Electrical and Electronic Engineering, Thin film, 010302 applied physics, Nano-imprint, Dopant, business.industry, roll to roll, Transistor, Gallium compounds, Amorphous semiconductors, Thin film transistors, II-VI semiconductors, Semiconducting indium compounds, Thin film circuits, Electronic, Optical and Magnetic Materials, Resist, Imprint lithography, Thin-film transistor, Amorphous indium gallium zinc oxide (a-IGZO), Self-aligned, Optoelectronics, Field-effect transistor, substrate conformal imprint lithography (SCIL), business, Amorphous films
Abstract

Thin-film transistors (TFTs) are the fundamental building blocks of today’s display industry. To achieve higher drive currents and device density, it is essential to scale down the channel lengths of TFTs. To be able to fabricate short-channel TFTs in large volumes is also equally important in order to realize lower fabrication costs and higher throughput. In this paper, we demonstrate the application of substrate conformal imprint lithography (SCIL) to pattern top-gate (TG) self-aligned (SA) amorphous indium gallium zinc oxide TFTs down to channel length ${L}_{\textsf {G}} = \textsf {450}$ nm with good device scaling properties resulting in average field-effect mobility ( ${\mu }_{FE}$ ) $= \sim 10$ cm $^{\textsf {2}}\cdot \text{V}^{-\textsf {1}}\cdot \text{s}^{\textsf {-1}}$ , ${V}_{\mathrm{ON}} = \,\sim 0.5$ V, and subthreshold swing (SS) $= \sim 0.3$ V/decade. The device performance as a function of channel length outlines the importance of dopant diffusion control for realizing submicrometer SA TFTs. The results demonstrate the compatibility of SCIL-based large-area patterning for the realization of submicrometer TG SA TFTs with a potential for high throughput.

Published
2019

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