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Two-dimensional (2D) transition-metal dichalcogenides (TMDCs), such as tungsten diselenide (WSe 2 ), hold immense potential for applications in electronic and optoelectronic devices. However, a significant Schottky barrier height (SBH) at the metal-semiconductor (MS) interface reduces the electronic device performance. Here, we present a unique 2D/2D contact method for minimizing contact resistance and reducing the SBH. This approach utilizes vanadium-doped WSe 2 (V-WSe 2 ) as the drain and source contacts. The fabricated transistor exhibited a stable operation with p-type quasi-ohmic contact and a high on/off current ratio surpassing 10 8 at room temperature, reaching 10 11 at 10 K. The device achieved an on-current of 68.87 μA, a high mobility of 103.80 cm 2 V -1 s -1 , a low contact resistance of 0.92 kΩ, and remarkably low SBH values of 1.51 meV for holes at V GS = -120 V with fixed V DS = 1 V. Furthermore, a Schottky photodiode has been fabricated, utilizing V-WSe 2 and Cr as the asymmetric contact platform, showing a responsivity of 116 mA W 1- . The findings of this study suggest a simple and efficient method for improving the performance of TMDC-based transistors.