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Literary texts offer a rich environment for language learning that teachers can exploit to develop not only students' linguistic (pragmatic, discursive) and cultural skills, but also communication and creative skills. In our study, we have used literature with different writing activities that involved the use of students' imagination and creativity. In order to develop these skills, which require students' communicative competence as well as their imagination, we need for them to be able to create the meaningful contexts that lie within fictional stories. The assumption is that, as students become familiar with the characters in the novels, they will be able to recreate situations that make sense for those very stories, generating a shared world in which they could immerse themselves. In that shared world, they would be able to participate in possible dialogues and build stories that could have taken place, thus developing their creative and communicative skills. In this paper, we show how the literature-based learning activities that we have designed following this hypothesis have helped students empathise with characters in novels and imagine fictional worlds. Such new fictional worlds have in turn empowered students to communicate in Spanish in an authentic way, that is, in a way that is similar to that of the characters in the novels. [For the complete volume, "Literature in Language Learning: New Approaches," see ED608008.]

In nano-structures such as thin films electron confinement results in the quantization of energy levels in the direction perpendicular to the film. The discretization of the energy levels leads to the oscillatory dependence of many properties on the film thickness due to quantum size effects. Pb on Si(111) is a specially interesting system because a particular relationship between the Pb atomic layer thickness and its Fermi wavelength leads to a periodicity of the oscillation of two atomic layers. Here, we demonstrate how the combination of scanning force microscopy (SFM) and Kelvin probe force microscopy (KPFM) provides a reliable method to monitor the quantum oscillations in the work function of Pb ultra-thin film nano-structures on Si(111). Unlike other techniques, with SFM/KPFM we directly address single Pb islands, determine their height while suppressing the influence of electrostatic forces, and, in addition, simultaneously evaluate their local work function by measurements close to equilibrium, without current-dependent and non-equilibrium effects. Our results evidence even-odd oscillations in the work function as a function of the film thickness that decay linearly with the film thickness, proving that this method provides direct and precise information on the quantum states., Comment: This document is the unedited author's version of a Submitted Work that was subsequently accepted for publication in Nanoscale, copyright Royal Society of Chemistry after peer review. To access the final edited and published work see doi below

Well-ordered stepped semiconductor surfaces attract intense attention owing to the regular arrangements of their atomic steps that makes them perfect templates for the growth of one- dimensional systems, e.g. nanowires. Here, we report on the atomic structure of the vicinal Si(111) surface with 10 degree miscut investigated by a joint frequency-modulation scanning force microscopy (FM-SFM) and ab initio approach. This popular stepped surface contains 7 x 7-reconstructed terraces oriented along the Si(111) direction, separated by a stepped region. Recently, the atomic structure of this triple step based on scanning tunneling microscopy (STM) images has been subject of debate. Unlike STM, SFM atomic resolution capability arises from chemical bonding of the tip apex with the surface atoms. Thus, for surfaces with a corrugated density of states such as semiconductors, SFM provides complementary information to STM and partially removes the dependency of the topography on the electronic structure. Our FM-SFM images with unprecedented spatial resolution on steps confirm the model based on a (7 7 10) orientation of the surface and reveal structural details of this surface. Two different FM-SFM contrasts together with density functional theory calculations explain the presence of defects, buckling and filling asymmetries on the surface. Our results evidence the important role of charge transfers between adatoms, restatoms, and dimers in the stabilisation of the structure of the vicinal surface.

Stepped well-ordered semiconductor surfaces are important as nanotemplates for the fabrication of one-dimensional nanostructures which are candidates of intriguing electronic properties. Therefore a detailed understanding of the underlying stepped substrates is crucial for advances in this field. Although measurements of step edges are challenging for scanning force microscopy (SFM), here we present for the first time simultaneous atomically resolved SFM and Kelvin probe force microscopy (KPFM) images of a silicon vicinal surface. We find that the local contact potential difference is not homogeneous over all silicon atoms, contrary to the common understanding of the work function. For the interpretation of the data we performed density functional theory (DFT) calculations. We explain the atomic-scale electronic features by differences in the surface dipole distribution caused by a Smoluchowski-type effect. E.g., at step edges the partial negative charge is larger at the lower-lying atoms closer to the bulk than at the atoms more protruding towards the vacuum. This is the first manifestation of such type of effect on a semiconductor surface. The DFT images accurately reproduce the experiments even without including the tip in the calculations. This underlines that the high-resolution KPFM images indeed show the intrinsic properties of the surface and not only tip-surface interactions., Comment: This document is the unedited author's version of a Submitted Work that was subsequently accepted for publication in The Journal of Physical Chemistry Letters, copyright American Chemical Society after peer review. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acs.jpclett.5b02650

In the field of molecular electronics thin films of molecules adsorbed on insulating surfaces are used as the functional building blocks of electronic devices. A control of the structural and electronic properties of the thin films is required for a reliable operating mode of such devices. Here, noncontact atomic force and Kelvin probe force microscopies have been used to investigate the growth and electronic properties of pentacene on KBr(001) and KCl(001) surfaces. Mainly molecular islands of upright standing pentacene are formed, whereas a new phase of tilted molecules appear near step edges on some KBr samples. Local contact potential differences (LCPD) have been studied with both Kelvin experiments and density-functional theory calculations. Large LCPD are found between the substrate and the differently oriented molecules, which may be explained by a partial charge transfer from the pentacene to the surface. The monitoring of the changes of the pentacene islands during dewetting shows that multilayers build up at the expense of monolayers. Moreover, in the Kelvin images, previously unknown line defects appear, which unveil the epitaxial growth of pentacene crystals., Comment: This document is the unedited author's version of a Submitted Work that was subsequently accepted for publication in ACSNano, copyright American Chemical Society after peer review. To access the final edited and published work see doi below