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A spectroscopic ellipsometry study on as-deposited and annealed non-stoichiometric indium zinc tin oxide thin films of four different compositions prepared by RF magnetron sputtering was conducted. Multi-sample analysis with two sets of samples sputtered onto glass slides and silicon wafers, together with the analysis of the samples onto each substrate separately, was utilized for as-deposited samples. Annealed samples onto the glass slides were also analyzed. Spectroscopic ellipsometry in a wide spectral range (0.2-6 eV) was used to determine optical constants (refractive index n and extinction coefficient k) of these films. Parameterized semiconductor oscillator function, together with Drude oscillator, was used as a model dielectric function. Geometrical parameters (layer thickness and surface roughness) and physical parameters (direct optical bandgap, free carrier concentration, mobility, and specific electrical resistivity) were determined from spectroscopic ellipsometry data modeling. Specific electrical resistivity determined from the Drude oscillator corresponds well with the results from electrical measurements. Change in the optical bandgap, visible especially for annealed samples, corresponds with the change of free carrier concentration (Moss-Burstein effect). Scanning electron microscope did not reveal any noticeable annealing-induced change in surface morphology., Byla provedena studie pomocí spektroskopické elipsometrie na deponovaných a žíhaných nestechiometrických tenkých vrstvách oxidu india, zinku a cínu čtyř různých složení připravených RF magnetronovým naprašováním. Pro deponované vzorky byla použita vícevzorková analýza se dvěma sadami vzorků naprášenými na skleněné a křemíkové substrátu spolu s analýzou vzorků na každém substrátu zvlášť. Byly také analyzovány vzorky vyžíhané na skle. Pro stanovení optických konstant (index lomu n a extinkční koeficientu k) těchto vrstev byla použita spektroskopická elipsometrie v širokém spektrálním rozsahu (0,2-6 eV). PSEMI spolu s Drudeho oscilátorem byla použita jako modelová dielektrická funkce. Geometrické parametry (tloušťka vrstvy a drsnost povrchu) a fyzikální parametry (přímý optický zakázaný pás, koncentrace volných nositelů, pohyblivost a specifický elektrický odpor) byly stanoveny z modelování dat pomocí spektroskopické elipsometrie. Měrný elektrický odpor stanovený pomocí Drudeho oscilátoru dobře odpovídá výsledkům z elektrických měření. Změna zakázaného pásu, viditelná zejména u žíhaných vzorků, odpovídá změně koncentrace volných nositelů (Moss-Bursteinův efekt). Rastrovací elektronový mikroskop neodhalil žádnou znatelnou změnu morfologie povrchu vyvolanou žíháním.

The tribe Plantagineae (Lamiales) is a group of plants with worldwide distribution, notorious for its complicated taxonomy and still unresolved natural history. We describe the result of a broadly sampled phylogenetic study of tribe. The expanded sampling dataset is based on the trnL-F spacer, rbcL, and ITS2 markers across all three included genera (Aragoa, Littorella and Plantago) and makes this the most comprehensive study to date. The other dataset uses five markers and provides remarkably good resolution throughout the tree, including support for all of the major clades. In addition to the molecular phylogeny, a morphology database of 114 binary characters was assembled to provide comparison with the molecular phylogeny and to develop a means to assign species not sampled in the molecular analysis to their most closely related species that were sampled. Based on the molecular phylogeny and the assignment algorithm to place unsampled species, a key to sections is presented, and a revised classification of the tribe is provided. We also include the description of new species from North America

A spectroscopic ellipsometry study on as-deposited and annealed non-stoichiometric indium zinc tin oxide thin films of four different compositions prepared by RF magnetron sputtering was conducted. Multi-sample analysis with two sets of samples sputtered onto glass slides and silicon wafers, together with the analysis of the samples onto each substrate separately, was utilized for as-deposited samples. Annealed samples onto the glass slides were also analyzed. Spectroscopic ellipsometry in a wide spectral range (0.2–6 eV) was used to determine optical constants (refractive index n and extinction coefficient k) of these films. Parameterized semiconductor oscillator function, together with Drude oscillator, was used as a model dielectric function. Geometrical parameters (layer thickness and surface roughness) and physical parameters (direct optical bandgap, free carrier concentration, mobility, and specific electrical resistivity) were determined from spectroscopic ellipsometry data modeling. Specific electrical resistivity determined from the Drude oscillator corresponds well with the results from electrical measurements. Change in the optical bandgap, visible especially for annealed samples, corresponds with the change of free carrier concentration (Moss– Burstein effect). Scanning electron microscope did not reveal any noticeable annealing-induced change in surface morphology.

Aronia Medik. (chokeberry, Rosaceae) is a genus of woody shrubs with two or three North American species. Species boundaries and relationships between species of Aronia are frequently under question. The only European species in the genus, A. mitschurinii A.K.Skvortsov & Maitul., is suggested to be an inter-generic hybrid. In order to clarify the relationships between species of Aronia, we performed several morphometric and molecular analyses and found that the molecular and morphological diversity within data on American Aronia is low, and species boundaries are mostly not clearly expressed. Whereas morphology is able to separate American species from A. mitschurinii, there is no support for such discrimination from the molecular data; our analyses did not reveal evidence of A. mitschurinii hybrid origin. We believe that higher-resolution markers are needed to resolve species boundaries and putative hybridization events.