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374 results on '"Lee, Ju Ah"'

2. Prescription patterns of herbal medicine for menopausal disorders in major Korean medicine hospitals: A multicenter retrospective study

Author

Lee, Hye Won, Choi, Tae-Young, Lee, Myeong Soo, Lee, Ju Ah, Jun, Ji Hee, Choi, Jiae, Ang, Lin, Lee, Chang-Hoon, Lee, Jin-Moo, Park, Kyoung Sun, Kim, Dong Chul, Jang, Se-Ran, Yoo, Jeong-Eun, Kim, Dong-il, Cho, Seong-Hee, Yang, Seung-Jeong, Lee, In Seon, Ahn, In-Suk, Lee, Dong-Nyung, Choi, Chang-Min, Song, Mi-Hwa, and Kim, Eunseop

Published
2021
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41. Integrated Logic Circuits Based on Wafer-Scale 2D-MoS 2 FETs Using Buried-Gate Structures.

Author

Lee, Ju-Ah, Yoon, Jongwon, Hwang, Seungkwon, Hwang, Hyunsang, Kwon, Jung-Dae, Lee, Seung-Ki, and Kim, Yonghun

Subjects
*INTEGRATED circuits, *BREAKDOWN voltage, *LOGIC circuits, *MOLYBDENUM disulfide, *FIELD-effect devices, *TRANSISTORS
Abstract

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS2), stand out due to their atomically thin layered structure and exceptional electrical properties. Consequently, they could potentially become one of the main materials for future integrated high-performance logic circuits. However, the local back-gate-based MoS2 transistors on a silicon substrate can lead to the degradation of electrical characteristics. This degradation is caused by the abnormal effect of gate sidewalls, leading to non-uniform field controllability. Therefore, the buried-gate-based MoS2 transistors where the gate electrodes are embedded into the silicon substrate are fabricated. The several device parameters such as field-effect mobility, on/off current ratio, and breakdown voltage of gate dielectric are dramatically enhanced by field-effect mobility (from 0.166 to 1.08 cm2/V·s), on/off current ratio (from 4.90 × 105 to 1.52 × 107), and breakdown voltage (from 15.73 to 27.48 V) compared with a local back-gate-based MoS2 transistor, respectively. Integrated logic circuits, including inverters, NAND, NOR, AND, and OR gates, were successfully fabricated by 2-inch wafer-scale through the integration of a buried-gate MoS2 transistor array. [ABSTRACT FROM AUTHOR]

Published
2023
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49. Robust 2D MoS2 Artificial Synapse Device Based on a Lithium Silicate Solid Electrolyte for High-Precision Analogue Neuromorphic Computing

Author

Park, Byeongjin, primary, Hwang, Yunjeong, additional, Kwon, Ojun, additional, Hwang, Seungkwon, additional, Lee, Ju Ah, additional, Choi, Dong-Hyeong, additional, Lee, Seoung-Ki, additional, Kim, Ah Ra, additional, Cho, Byungjin, additional, Kwon, Jung-Dae, additional, Lee, Je In, additional, and Kim, Yonghun, additional

Published
2022
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