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4. Temperature-Dependent Characteristics of GeSn Waveguide p-i-n Photodetectors: Step Towards Cryogenic Silicon Photonics

Author

Bansal, Radhika, Jheng, Yue-Tong, Lee, Kuo-Chih, Wen, Shuyu, Berencen, Yonder, Cheng, Hung-Hsiang, and Chang, Guo-En

Abstract

GeSn waveguide photodetectors (WGPDs) that function in the 2-µm band have been considered potentially competitive candidates for cryogenic silicon photonics to enable various emerging applications such as quantum sensing and quantum computing. Herein, we present a high-performance GeSn rib WGPD that can function within the 2-µm spectral range and its temperature-dependent characteristics. The proposed detectors feature a GeSn active layer with 4.9% Sn which redshifts the cutoff wavelength to cover the 2-µm band. In addition, the optical confinement factor was enhanced by growing a thick GeSn active layer. This resulted in a room temperature responsivity of 0.224 A/W at $\lambda = \text{1900 nm}$. We measured a noise equivalent power of $9.5 \times {{10}^{ - 10}}\ \mathrm{W}/\mathrm{H}{{\mathrm{z}}^{1/2}}$ at $\lambda = \text{1550 nm}$, confirming the practical viability of the proposed detector. Moreover, the temperature-dependent characteristics indicate that the dark current density (${{J}_{{\rm{dark }}}}$) variation is extremely low and responsivity decreases at low temperatures, leading to decreased spectral detectivity (${{D}^*}$), whereas the cut-off wavelength (${{\lambda }_{\mathrm{c}}}$) blueshifts owing to the increased bandgap. The temperature-dependent characteristics of the proposed GeSn WGPDs are expected to advance the understanding of GeSn WGPDs for cryogenic silicon photonics.

Published
2025
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