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Magnetic anisotropy is a crucial characteristic for enhancing spintronic device performance. The synthesis of SmCrGe$_3$ single crystals through a high-temperature solution method has led to the determination of uniaxial magnetocrystalline anisotropy. Phase verification was achieved using scanning transmission electron microscopy (STEM), powder, and single-crystal X-ray diffraction techniques. Electrical transport and specific heat measurements indicate a Curie temperature ($T_C$) of approximately 160 K, while magnetization measurements were utilized to determine the anisotropy fields and constants. Curie-Weiss fitting applied to magnetization data suggests the contribution of both Sm and Cr in the paramagnetic phase. Additionally, density functional theory (DFT) calculations explored the electronic structures and magnetic properties of SmCrGe$_3$, revealing a significant easy-axis single-ion Sm magnetocrystalline anisotropy of 16 meV/f.u.. Based on the magnetization measurements, easy-axis magnetocrystalline anisotropy at 20 K is 13 meV/f.u.., Comment: 27 pages, 5+5 figures

The discovery of novel quantum materials within ternary phase spaces containing antagonistic pair such as Fe with Bi, Pb, In, and Ag, presents significant challenges yet holds great potential. In this work, we investigate the stabilization of these immiscible pairs through the integration of Cerium (Ce), an abundant rare-earth and cost-effective element. By employing a machine learning (ML)-guided framework, particularly crystal graph convolutional neural networks (CGCNN), combined with first-principles calculations, we efficiently explore the composition/structure space and predict 9 stable and 37 metastable Ce-Fe-X (X=Bi, Pb, In and Ag) ternary compounds. Our findings include the identification of multiple new stable and metastable phases, which are evaluated for their structural and energetic properties. These discoveries not only contribute to the advancement of quantum materials but also offer viable alternatives to critical rare earth elements, underscoring the importance of Ce-based intermetallic compounds in technological applications.

The addition of magnetic impurities in topological insulators can drive ferromagnetic order that leads to novel quantum anomalous Hall transport well below the Curie temperature. The fragility of the quantized regime has been ascribed to the random nature of the magnetic moment distribution. Here, we refine this hypothesis by using inelastic neutron scattering and density-functional theory calculations to show that two antagonistic components define the magnetism in Mn-substituted SnTe, thereby limiting the effectiveness of dilute magnetic TIs. One component is strongly bound antiferromagnetic dimers that compete with ferromagnetic order. The other component consists of undimerized moments where ferromagnetic order develops via long-range interactions.

Kagome metals with the Fermi energy tuned near the van Hove singularities (vHss) have shown to host exotic phases including unconventional superconductivity and a chiral flux phase arising from a charge density wave. However, most quantum oscillations studies of the electronic structure of kagome metals focus on compounds which electronically or magnetically order, obscuring the unperturbed vHs. Here we present quantum oscillation measurements of YV$_6$Sn$_6$ which contains a pristine kagome lattice free from long range order. We discovered quantum oscillations corresponding to a large orbit ($\approx$70% of the Brillouin Zone area) with the heaviest mass ever observed in vanadium based kagome metals ($\approx3.3 m_e$), consistent with a Fermi pocket whose Fermi level is near the vHs. Comparing with first principles calculations suggests that the effective mass of this pocket is highly sensitive to the position of Fermi level. Our study establishes the enhanced density of states associated with a vHs in a kagome metal, allowing further insight into a potential driving mechanism for the unconventional electronic orderings in this class of materials.

Over the last few years, significant attention has been devoted to studying the kagome materials AV$_3$Sb$_5$ (A = K, Rb, Cs) due to their unconventional superconductivity and charge density wave (CDW) ordering. Recently ScV$_6$Sn$_6$ was found to host a CDW below $\approx$90K, and, like AV$_3$Sb$_5$, it contains a kagome lattice comprised only of V ions. Here we present a comprehensive magnetotransport study on ScV$_6$Sn$_6$. We discovered several anomalous transport phenomena above the CDW ordering temperature, including insulating behavior in interlayer resistivity, a strongly temperature-dependent Hall coefficient, and violation of Kohler's rule. All these anomalies can be consistently explained by a progressive decrease in carrier densities with decreasing temperature, suggesting the formation of a pseudogap. Our findings suggest that high-temperature CDW fluctuations play a significant role in determining the normal state electronic properties of ScV$_6$Sn$_6$.

Intricate nature of magnetism in uranium-based Kondo lattices is a consequence of correlations between U-5$f$ and conduction electrons. Using linearized quasiparticle self-consistent GW plus dynamical mean-field theory, we demonstrate a crossover from incoherent to coherent $f$-$d$ Kondo cloud in the paramagnetic phase of UTe$_2$ with reduced volumes, USbTe and USbSe. As the transition occurs, we observe an augmented $f$-$d$ coherence and Pauli-like magnetic susceptibility, with a substantial frozen magnetic moment of U-5$f$ persisting. We show that momentum dependent $f$-$d$ hybridization is responsible for the magnetic moments arising from the renormalized $f$ electrons' van Hove singularity. Our findings provide a unique perspective to explain the dual nature of magnetism and the long-range magnetic ordering induced by pressure in UTe$_2$.

Charge density waves (CDWs) have been tied to a number of unusual phenomena in kagome metals, including rotation symmetry breaking, time-reversal symmetry breaking and superconductivity. The majority of the experiments thus far have focused on the CDW states in AV3Sb5 and FeGe, characterized by the 2a0 by 2a0 period. Recently, a bulk CDW phase (T* ~ 92 K) with a different wave length and orientation has been reported in ScV6Sn6, as the first realization of a CDW state in the broad RM6X6 structure. Here, using a combination of scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal the microscopic structure and the spectroscopic signatures of this charge ordering phase in ScV6Sn6. Differential conductance dI/dV spectra show a partial gap opening in the density-of-states of about 20 meV at the Fermi level. This is much smaller than the spectral gaps observed in AV3Sb5 and FeGe despite the comparable T* temperatures in these systems, suggesting substantially weaker coupling strength in ScV6Sn6. Surprisingly, despite the three-dimensional bulk nature of the charge order, we find that the charge modulation is only observed on the kagome termination. Temperature-dependent band structure evolution suggests a modulation of the surface states as a consequence of the emergent charge order, with an abrupt spectral weight shift below T* consistent with the first-order phase transition. The similarity of the electronic band structures of ScV6Sn6 and TbV6Sn6 (where charge ordering is absent), together with the first-principle calculations, suggests that charge ordering in ScV6Sn6 may not be primarily electronically driven. Interestingly, in contrast to the CDW state of cousin AV3Sb5, we find no evidence supporting rotation symmetry breaking. Our results reveal a distinctive nature of the charge ordering phase in ScV6Sn6 in comparison to other kagome metals.

The interaction between strong correlation and Berry curvature is an open territory of in the field of quantum materials. Here we report large anomalous Hall conductivity in a Kondo lattice ferromagnet USbTe which is dominated by intrinsic Berry curvature at low temperatures. However, the Berry curvature induced anomalous Hall effect does not follow the scaling relation derived from Fermi liquid theory. The onset of the Berry curvature contribution coincides with the Kondo coherent temperature. Combined with ARPES measurement and DMFT calculations, this strongly indicates that Berry curvature is hosted by the flat bands induced by Kondo hybridization at the Fermi level. Our results demonstrate that the Kondo coherence of the flat bands has a dramatic influence on the low temperature physical properties associated with the Berry curvature, calling for new theories of scaling relations of anomalous Hall effect to account for the interaction between strong correlation and Berry curvature., Comment: Accepted by Nature Communications

Magnetic defects play an important, but poorly understood, role in magnetic topological insulators (TIs). For example, topological surface transport and bulk magnetic properties are controlled by magnetic defects in Bi$_2$Se$_3$-based dilute ferromagnetic (FM) TIs and MnBi$_2$Te$_4$ (MBT)-based antiferromagnetic (AFM) TIs. Despite its nascent ferromagnetism, our inelastic neutron scattering data show that a fraction of the Mn defects in Sb$_2$Te$_3$ form strong AFM dimer singlets within a quintuple block. The AFM superexchange coupling occurs via Mn-Te-Mn linear bonds and is identical to the AFM coupling between antisite defects and the FM Mn layer in MBT, establishing common interactions in the two materials classes. We also find that the FM correlations in (Sb$_{1-x}$Mn$_x$)$_2$Te$_3$ are likely driven by magnetic defects in adjacent quintuple blocks across the van der Waals gap. In addition to providing answers to long-standing questions about the evolution of FM order in dilute TI, these results also show that the evolution of global magnetic order from AFM to FM in Sb-substituted MBT is controlled by defect engineering of the intrablock and interblock coupling.

Two-dimensional magnetic materials (2DMM) are significant for studies on the nature of 2D long range magnetic order but also for future spintronic devices. Of particular interest are 2DMM where spins can be manipulated by electrical conduction. Whereas Cr$_2$Si$_2$Te$_6$ exhibits magnetic order in few-layer crystals, its large band gap inhibits electronic conduction. Here we show that the defect-induced short-range crystal order in Cr$_2$Si$_2$Te$_6$ on the length scale below 0.6 nm induces substantially reduced band gap and robust semiconducting behavior down to 2 K that turns to metallic above 10 GPa. Our results will be helpful to design conducting state in 2DMM and call for spin-resolved measurement of the electronic structure in exfoliated ultrathin crystals.

The thermodynamic and electronic-transport properties of trigonal EuMg2Bi2 in ab-plane magnetic fields Hx and the A-type antiferromagnetic structure have recently been reported. At a temperature of 1.8 K < TN, the Eu magnetic moments with spin S = 7/2 remain locked in the ab plane up to and above the ab-plane critical field Hxc = 27.5 kOe at which the Eu moments become parallel to Hx. Here additional measurements at low fields are reported that reveal a new spin-reorientation transition at a field Hc1 = 465 Oe where the Eu moments remain in the ab plane but become perpendicular to Hx. At higher fields, the moments cant towards the field resulting in M proportional to Hx up to Hxc. Similar results are reported from measurements of the magnetic properties of EuMg2Sb2 single crystals, where Hc1 = 220 Oe is found. Theory is formulated that models the low-field magnetic behavior of both materials, and the associated anisotropies are calculated. The ab-plane trigonal anisotropy in EuMg2Sb2 is found to be significantly smaller than in EuMg2Bi2., Comment: 11 pages, 10 captioned figures, 3 tables, 25 references

The synthesis and characterization of the vanadium-based kagome metal TbV${_6}$Sn${_6}$ is presented. X-ray measurements confirm this material forms with the same crystal structure type as the recently investigated kagome metals GdV$_6$Sn$_6$ and YV$_6$Sn$_6$, with space group symmetry P6/mmm. A signature of a phase transition at 4.1K is observed in heat capacity, resistivity, and magnetic susceptibility measurements, and both resistivity and magnetization measurements exhibit hysteresis in magnetic field. Furthermore, a strikingly large anisotropy in the magnetic susceptibility was observed, with the c-axis susceptibility nearly 100 times the ab plane susceptibility at 2K. This is highly suggestive of uniaxial ferromagnetism, and the large size of 9.4$\mu_b$/f.u. indicates the Tb$^{3+}$ $4f$ electronic moments cooperatively align perpendicular to the V kagome lattice plane. The entropy at the phase transition is nearly Rln(2), indicating that the CEF ground state of the Tb$^{3+}$ ion is a doublet, and therefore the sublattice of $4f$ electrons in this material can be shown to map at low temperatures to the Ising model in a D$_{6h}$ symmetry environment. Hall measurements at temperatures from 300K to 1.7K can be described by two-band carrier transport at temperatures below around 150K, with a large increase in both hole and electron mobilities, similar to YV$_6$Sn$_6$, and an anomalous Hall effect is seen below the ordering temperature. Angle-resolved photoemission measurements above the magnetic ordering temperature reveal typical kagome dispersions. Our study presents TbV${_6}$Sn${_6}$ as an ideal system to study the interplay between Ising ferromagnetism and non-trivial electronic states emerging from a kagome lattice.

Intrinsic, two-dimensional (2D) ferromagnetic semiconductors are an important class of materials for spin-charge conversion applications. Cr$_2$Ge$_2$Te$_6$ retains long-range magnetic order in bilayer at cryogenic temperatures and shows complex magnetic interactions with considerable magnetic anisotropy. Here, we performed a series of structural, magnetic, X-ray scattering, electronic, thermal transport and first-principles calculation studies which reveal that localized electronic charge carriers in Cr$_2$Ge$_2$Te$_6$ are dressed by surrounding lattice and are involved in polaronic transport via hopping that is sensitive on details of magnetocrystalline anisotropy. This opens possibility for manipulation of charge transport in Cr$_2$Ge$_2$Te$_6$ - based devices by electron-phonon- and spin-orbit coupling-based tailoring of polaron properties.

Low temperature ($\sim$ 20~K) electron irradiation with 2.5 MeV relativistic electrons was used to study the effect of controlled non-magnetic disorder on the normal and superconducting properties of the type-II Dirac semimetal PdTe$_2$. We report measurements of longitudinal and Hall resistivity, thermal conductivity and London penetration depth using tunnel-diode resonator technique for various irradiation doses. The normal state electrical resistivity follows Matthiessen rule with an increase of the residual resistivity at a rate of $\sim$0.77$ \mu \Omega$cm/$(\textrm{C}/\textrm{cm}^2)$. London penetration depth and thermal conductivity results show that the superconducting state remains fully gapped. The superconducting transition temperature is suppressed at a non-zero rate that is about sixteen times slower than described by the Abrikosov-Gor'kov dependence, applicable to magnetic impurity scattering in isotropic, single-band $s$-wave superconductors. To gain information about the gap structure and symmetry of the pairing state, we perform a detailed analysis of these experimental results based on insight from a generalized Anderson theorem for multi-band superconductors. This imposes quantitative constraints on the gap anisotropies for each of the possible pairing candidate states. We conclude that the most likely pairing candidate is an unconventional $A_{1g}^{+-}$ state. While we cannot exclude the conventional $A_{1g}^{++}$ and the triplet $A_{1u}$, we demonstrate that these states require additional assumptions about the orbital structure of the disorder potential to be consistent with our experimental results, e.g., a ratio of inter- to intra-band scattering for the singlet state significantly larger than one. Due to the generality of our theoretical framework, we think that it will also be useful for irradiation studies in other spin-orbit-coupled multi-orbital systems., Comment: 22 pages, 12 figures

We use high resolution angle-resolved photoemission spectroscopy (ARPES) and electronic structure calculations to study the electronic properties of rare-earth monoantimonides RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu). The experimentally measured Fermi surface (FS) of RSb consists of at least two concentric hole pockets at the $\Gamma$ point and two intersecting electron pockets at the $X$ point. These data agree relatively well with the electronic structure calculations. Detailed photon energy dependence measurements using both synchrotron and laser ARPES systems indicate that there is at least one Fermi surface sheet with strong three-dimensionality centered at the $\Gamma$ point. Due to the "lanthanide contraction", the unit cell of different rare-earth monoantimonides shrinks when changing rare-earth ion from CeSb to LuSb. This results in the differences in the chemical potentials in these compounds, which is demonstrated by both ARPES measurements and electronic structure calculations. Interestingly, in CeSb, the intersecting electron pockets at the $X$ point seem to be touching the valence bands, forming a four-fold degenerate Dirac-like feature. On the other hand, the remaining rare-earth monoantimonides show significant gaps between the upper and lower bands at the $X$ point. Furthermore, similar to the previously reported results of LaBi, a Dirac-like structure was observed at the $\Gamma$ point in YSb, CeSb, and GdSb, compounds showing relatively high magnetoresistance. This Dirac-like structure may contribute to the unusually large magnetoresistance in these compounds., Comment: 8 figures

In topological quantum materials the conduction and valence bands are connected at points (Dirac/Weyl semimetals) or along lines (Line Node semimetals) in the momentum space. Numbers of studies demonstrated that several materials are indeed Dirac/Weyl semimetals. However, there is still no experimental confirmation of materials with line nodes, in which the Dirac nodes form closed loops in the momentum space. Here we report the discovery of a novel topological structure - Dirac node arcs - in the ultrahigh magnetoresistive material PtSn4 using laser-based angle-resolved photoemission spectroscopy (ARPES) data and density functional theory (DFT) calculations. Unlike the closed loops of line nodes, the Dirac node arc structure resembles the Dirac dispersion in graphene that is extended along one dimension in momentum space and confined by band gaps on either end. We propose that this reported Dirac node arc structure is a novel topological state that provides a novel platform for studying the exotic properties of Dirac Fermions., Comment: 13 pages, 4 figures

We use angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations to study the electronic structure of CaFe$_2$As$_2$ in previously unexplored collapsed tetragonal (CT) phase. This unusual phase of the iron arsenic high temperature superconductors was hard to measure as it exists only under pressure. By inducing internal strain, via the post growth, thermal treatment of the single crystals, we were able to stabilize the CT phase at ambient-pressure. We find significant differences in the Fermi surface topology and band dispersion data from the more common orthorhombic-antiferromagnetic or tetragonal-paramagnetic phases, consistent with electronic structure calculations. The top of the hole bands sinks below the Fermi level, which destroys the nesting present in parent phases. The absence of nesting in this phase along with apparent loss of Fe magnetic moment, are now clearly experimentally correlated with the lack of superconductivity in this phase., Comment: 5 pages, 4 figures, accepted in PRB(RC)

Rare-earth platinum bismuth (RPtBi) has been recently proposed to be a potential topological insulator. In this paper we present measurements of the metallic surface electronic structure in three members of this family, using angle resolved photoemission spectroscopy (ARPES). Our data shows clear spin-orbit splitting of the surface bands and the Kramers' degeneracy of spins at the Gamma and M points, which is nicely reproduced with our full-potential augmented plane wave calculation for a surface electronic state. No direct indication of topologically non-trivial behavior is detected, except for a weak Fermi crossing detected in close vicinity to the Gamma point, making the total number of Fermi crossings odd. In the surface band calculation, however, this crossing is explained by another Kramers' pair where the two splitting bands are very close to each other. The classification of this family of materials as topological insulators remains an open question., Comment: 6 pages, 5 figures

We measured the electronic structure of an iron arsenic parent compound LaFeAsO using angle resolved photoemission spectroscopy (ARPES). By comparing with a full-potential Linear Augmented PlaneWave calculation we show that the extra large Gamma hole pocket measured via ARPES comes from electronic structure at the sample surface. Based on this we discuss the strong polarization dependence of the band structure and a temperature-dependent hole-like band around the M point. The two phenomena give additional evidences for the existence of the surface-driven electronic structure., Comment: 6 pages, 6 figures

We propose the projected BCS wave function as the ground state for the doped Mott insulator SrCu2(BO3)2 on the Shastry-Sutherland lattice. At half filling this wave function yields the exact ground state. Adding mobile charge carriers, we find a strong asymmetry between electron and hole doping. Upon electron doping an unusual metal with strong valence bond correlations forms. Hole doped systems are d-wave RVB superconductors in which superconductivity is strongly enhanced by the emergence of inhomogeneous plaquette bond order., Comment: 4 pages, 3 figures