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Metal-insulator transitions in clean, crystalline solids can be driven by two distinct mechanisms. In a conventional insulator, the charge carrier concentration vanishes, when an energy gap separates filled and unfilled electronic states. In the established picture of a Mott insulator, by contrast, electronic interactions cause coherent charge carriers to slow down and eventually stop in electronic grid-lock without materially affecting the carrier concentration itself. This description has so far escaped experimental verification by quantum oscillation measurements, which directly probe the velocity distribution of the coherent charge carriers. By extending this technique to high pressure we were able to examine the evolution of carrier concentration and velocity in the strongly correlated metallic state of the clean, crystalline material NiS$_2$, while tuning the system towards the Mott insulating phase. Our results confirm that pronounced electronic slowing down indeed governs the approach to the insulating state. However, the critical point itself, at which the carrier velocity would reach zero and the effective carrier mass diverge, is concealed by the insulating sector of the phase diagram. In the resulting, more nuanced view of Mott localisation, the inaccessibility of the low temperature Mott critical point resembles that of the threshold of magnetic order in clean metallic systems, where criticality is almost universally interrupted by first order transitions, tricritical behaviour or novel emergent phases such as unconventional superconductivity., Comment: 8 pages, 3 figures

The electric-field tunable Rashba spin-orbit coupling at the LaAlO3/SrTiO3 interface shows potential applications in spintronic devices. However, different gate dependence of the coupling strength has been reported in experiments. On the theoretical side, it has been predicted that the largest Rashba effect appears at the crossing point of the $d_{xy}$ and $d_{xz,yz}$ bands. In this work, we study the tuneability of the Rashba effect in LaAlO3/SrTiO3 by means of back-gating. The Lifshitz transition was crossed multiple times by tuning the gate voltage so that the Fermi energy is tuned to approach or depart from the band crossing. By analyzing the weak antilocalization behavior in the magnetoresistance, we find that the maximum spin-orbit coupling effect occurs when the Fermi energy is near the Lifshitz point. Moreover, we find strong evidence for a single spin winding at the Fermi surface., Comment: 5 pages, 4 figures

In LaAlO3/SrTiO3 heterostructures, a commonly observed but poorly understood phenomenon is that of electron trapping in back-gating experiments. In this work, by combining magnetotransport measurements and self-consistent Schroedinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. We find that the trapped electrons follow an exponentially decaying spatial distribution away from the interface. However, contrary to earlier observations, we find that the Fermi level remains well within the quantum well. The enhanced trapping of electrons induced by the gate voltage can therefore not be explained by a thermal escape mechanism. Further gate sweeping experiments strengthen our conclusion that the thermal escape mechanism is not valid. We propose a new mechanism which involves the electromigration and clustering of oxygen vacancies in SrTiO3. Our work indicates that electron trapping is a universal phenomenon in SrTiO3-based two-dimensional electron systems., Comment: manuscript + supplementary information, 8 pages

The interface between the two insulating oxides SrTiO$_3$ and LaAlO$_3$ gives rise to a two-dimensional electron system with intriguing transport phenomena, including superconductivity, which are controllable by a gate. Previous measurements on the (001) interface have shown that the superconducting critical temperature, the Hall density, and the frequency of quantum oscillations, vary nonmonotonically and in a correlated fashion with the gate voltage. In this paper we experimentally demonstrate that the (111) interface features a qualitatively distinct behavior, in which the frequency of Shubnikov-de Haas oscillations changes monotonically, while the variation of other properties is nonmonotonic albeit uncorrelated. We develop a theoretical model, incorporating the different symmetries of these interfaces as well as electronic-correlation-induced band competition. We show that the latter dominates at (001), leading to similar nonmonotonicity in all observables, while the former is more important at (111), giving rise to highly curved Fermi contours, and accounting for all its anomalous transport measurements., Comment: 6+7 pages, 4+6 figures, Published Version

The peculiar band structure of semimetals exhibiting Dirac and Weyl crossings can lead to spectacular electronic properties such as large mobilities accompanied by extremely high magnetoresistance. In particular, two closely neighbouring Weyl points of the same chirality are protected from annihilation by structural distortions or defects, thereby significantly reducing the scattering probability between them. Here we present the electronic properties of the transition metal diphosphides, WP2 and MoP2, that are type-II Weyl semimetals with robust Weyl points. We present transport and angle resolved photoemission spectroscopy measurements, and first principles calculations. Our single crystals of WP2 display an extremely low residual low-temperature resistivity of 3 nohm-cm accompanied by an enormous and highly anisotropic magnetoresistance above 200 million % at 63 T and 2.5 K. These properties are likely a consequence of the novel Weyl fermions expressed in this compound. We observe a large suppression of charge carrier backscattering in WP2 from transport measurements., Comment: Appeared in Nature Communications

Weyl and Dirac fermions have created much attention in condensed matter physics and materials science. Recently, several additional distinct types of fermions have been predicted. Here, we report ultra-high electrical conductivity in MoP at low temperature, which has recently been established as a triple point Fermion material. Here we show that the electrical resistivity is 6 n-ohm cm at 2 K with a large mean free path of 11 microns. de Haas-van Alphen oscillations reveal spin splitting of the Fermi surfaces. In contrast to noble metals with similar conductivity and number of carriers, the magnetoresistance in MoP does not saturate up to 9 T at 2 K. Interestingly, the momentum relaxing time of the electrons is found to be more than 15 times larger than the quantum coherence time. This difference between the scattering scales shows that momentum conserving scattering dominates in MoP at low temperatures., Comment: Updated texts and supplementary

Topological insulators are characterized by an inverted band structure in the bulk and metallic surface states on the surface. In LaBi, a semimetal with a band inversion equivalent to a topological insulator, we observe surface state like behavior in the magnetoresistance. The electrons responsible for this pseudo two dimensional transport, however, originate from the bulk states rather topological surface states, which is witnessed by the angle dependent quantum oscillations of the magnetoresistance and ab initio calculations. As a consequence, the magnetoresistance exhibits strong anisotropy with large amplitude (~ 10^5 %)., Comment: 21 pages, 4 figures and supplementary information

Recent experiments have revealed spectacular transport properties of conceptually simple semimetals. For example, normal semimetals (e.g. WTe$_2$) have started a new trend to realize a large magnetoresistance, which is the change of electrical resistance by an external magnetic field. Weyl semimetal (WSM) is a topological semimetal with massless relativistic electrons as the three-dimensional analogue of graphene and promises exotic transport properties and surface states, which are different from those of the famous topological insulators (TIs). In this letter, we choose to utilize NbP in magneto-transport experiments because its band structure is on assembly of a WSM and a normal semimetal. Such a combination in NbP indeed leads to the observation of remarkable transport properties, an extremely large magnetoresistance of 850,000 % at 1.85 K (250 % at room temperature) in a magnetic field of 9 T without any signs of saturation, and ultrahigh carrier mobility of 5$\times$10$^6$ cm$^2$ V$^{-1}$ s$^{-1}$ accompanied by strong Shubnikov-de Hass (SdH) oscillations. NbP presents a unique example to consequent design the functionality of materials by combining the topological and conventional phases., Comment: 18 pages, 4 figures, Nature Physics, online (2015)