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13 results on '"Legrand, Charles-Alexandre"'

5. Thin-body ESD protections in 28nm UTBB-FDSOI: From static to transient behavior

Author

Solaro, Yohann, Fonteneau, Pascal, Legrand, Charles-Alexandre, Marin-Cudraz, David, passieux, Jérémy, guyader, pascal, Clément, Laurent-Renaud, Fenouillet-Beranger, Claire, Ferrari, Philippe, Cristoloveanu, Sorin, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Electronic ISBN: 978-1-58537-257-7, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), and Ducroquet, Frédérique

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; Innovative Ultra-Thin Body and Buried Oxide FDSOI protections (BBC-T and Z2-FET) are characterized and analyzed in order to assess the CDM time domain behavior. In addition to static (leakage and triggering) control, it is found that front and back gate coupling is a very efficient way to improve the transient responses of the proposed devices.

Published
2014

8. Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology.

Author

Legrand, Charles-Alexandre, Galy, Philippe, Athanasiou, Sotirios, and Cristoloveanu, Sorin

Subjects
*DIODES, *THERMODYNAMICS research, *SIMULATION methods & models
Abstract

We propose a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28 nm UTBB FD-SOI high-k metal gate technology. By modifying the combination of the diode and transistor gate stacks, the robustness of the device is optimized, achieving a maximum breakdown voltage (V BR ) of 4.9 V. In addition, modifications of the gate length modulate the trigger voltage (V t1 ) with a minimum value of 3.5 V. Variable electrostatic doping (gate-induced) in diode and transistor body enables reconfigurable operation. A lower doping of the base enhances the bipolar gain, leading to thyristor behavior. This innovative architecture demonstrates excellent capability for high-voltage protection while maintaining a latch-up free behavior. [ABSTRACT FROM AUTHOR]

Published
2017
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9. Innovative ESD protections for UTBB FD-SOI technology

Author

Solaro, Yohann, primary, Fonteneau, Pascal, additional, Legrand, Charles-Alexandre, additional, Marin-Cudraz, David, additional, Passieux, Jeremy, additional, Guyader, Pascal, additional, Clement, Laurent-Renaud, additional, Fenouillet-Beranger, Claire, additional, Ferrari, Philippe, additional, and Cristoloveanu, Sorin, additional

Published
2013
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