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In this article, NaxCu1−xI thin-film transistors gated by chitosan for low-voltage operation have been created by doping CuI with different Na concentrations (x = 0, 0.05, 0.1). It is found that the devices exhibit optimal performance when x is 0.05: a large current on/off ratio of 1.62 × 105, a steep subthreshold slope of 17.72 mV/dec, a saturation field-effect mobility of 0.51 cm2/V s, and a threshold voltage of 1.10 V. The operating voltage of the devices is reduced to below 2 V due to the electric-double-layer (EDL) effect. At a frequency of 10 Hz, a maximum specific capacitance of 1.36 μF/cm2 can be obtained in the chitosan. The effects of bias stress and laser on Na0.05Cu0.95I thin-film transistors (TFTs) have been examined at the end of the article, and the results revealed that Na0.05Cu0.95I TFTs possess good stability. As the bias stress gets longer and the laser power increases, the transfer curves of TFTs shift positively. Also, artificial synaptic behaviors and functions have been simulated experimentally. It can be divided into single-pulse, double-pulse, and multiple-pulse. According to the experimental results, features such as short-term plasticity, long-term plasticity, paired-pulse facilitation, high-pass filtering, pulse logic, and spatial summation have been achieved. The electrostatic modulation of EDL due to proton transverse migration is vital for this simulation. The realization of low-voltage synaptic Na0.05Cu0.95I TFTs prepared by solution method with pulse logic and spatial summation functions is crucial for application of portable biosensors and neuromorphic systems. [ABSTRACT FROM AUTHOR]

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO 4 (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 μF cm -2 related to electric-double-layer formation. The threshold voltage, drain current on/off ratio and subthreshold swing are estimated to be -0.1 V, 1.2 × 10 6 and 80 mV per decade, respectively. The combination of low voltage, high current on-to-off ratio and room temperature processing make the flexible vertical-IGZO-channel TFTs very promising for low-power portable flexible electronics applications., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)