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2. Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure

Author

Coh, Sinisa, Heeg, Tassilo, Haeni, J. H., Biegalski, M. D., Lettieri, J., Edge, L. F., O'Brien, K. E., Reiche, P., Uecker, R., Trolier-McKinstry, S., Schlom, Darrell G., and Vanderbilt, David

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-K dielectrics. We also analyze the structure of these materials with various simple models, decompose the lattice contribution to the dielectric tensor into force constant matrix eigenmode contributions, explore a peculiar correlation between structural and dielectric anisotropies in these compounds and give phonon frequencies and infrared activities of those modes that are infrared-active. We find that CaZrO_3, SrZrO_3, LaHoO_3, and LaYO_3 are among the most promising candidates for high-K dielectrics among the compounds we considered., Comment: 17 pages, 9 figures, 4 tables. Supplementary information: http://link.aps.org/supplemental/10.1103/PhysRevB.82.064101 or http://www.physics.rutgers.edu/~sinisa/highk/supp.pdf

Published
2010
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3. Synthesis and Properties of c-axis Oriented Epitaxial MgB2 Thin Films

Author

Bu, S. D., Kim, D. M., Choi, J. H., Giencke, J., Patnaik, S., Cooley, L., Hellstrom, E. E., Larbalestier, D. C., Eom, C. B., Lettieri, ; J., Schlom, D. G., Tian, ; W., and Pan, X.

Subjects
Condensed Matter - Superconductivity, Condensed Matter - Materials Science
Abstract

We report the growth and properties of epitaxial MgB2 thin films on (0001) Al2O3 substrates. The MgB2 thin films were prepared by depositing boron films via RF magnetron sputtering, followed by a post-deposition anneal at 850C in magnesium vapor. X-ray diffraction and cross-sectional TEM reveal that the epitaxial MgB2 films are oriented with their c-axis normal to the (0001) Al2O3 substrate and a 30 degree rotation in the ab-plane with respect to the substrate. The critical temperature was found to be 35 K and the anisotropy ratio, Hc2(parallel to the film) / Hc2(pendicular to the film), about 3 at 25K. The critical current densities at 4.2 K and 20 K (at 1 T perpendicular magnetic field) are 5x10E6 A/cm2 and 1x10E6 A/cm2, respectively. The controlled growth of epitaxial MgB2 thin films opens a new avenue in both understanding superconductivity in MgB2 and technological applications., Comment: 10 pages, 6 figures

Published
2002
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4. In situ epitaxial MgB2 thin films for superconducting electronics

Author

Zeng, X. H., Pogrebnyakov, A. V., Kotcharov, A., Jones, J. E., Xi, X. X., Lysczek, E. M., Redwing, J. M., Xu, S. Y., Li, Qi, Lettieri, J., Schlom, D. G., Tian, W., Pan, X. Q., and Liu, Z. K.

Subjects
Condensed Matter - Materials Science
Abstract

A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ} growth of MgB$_2$ thin films. The films grow epitaxially on (0001) sapphire and (0001) 4H-SiC substrates and show a bulk-like $T_c$ of 39 K, a $J_c$(4.2K) of $1.2 \times 10^7$ A/cm$^2$ in zero field, and a $H_{c2}(0)$ of 29.2 T in parallel magnetic field. The surface is smooth with a root-mean-square roughness of 2.5 nm for MgB$_2$ films on SiC. This deposition method opens tremendous opportunities for superconducting electronics using MgB$_2$.

Published
2002
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5. Superconducting properties of nanocrystalline MgB$_2$ thin films made by an in situ annealing process

Author

Zeng, X. H., Sukiasyan, A., Xi, X. X., Hu, Y. F., Wertz, E., Li, Qi, Tian, W., Sun, H. P., Pan, X. Q., Lettieri, J., Schlom, D. G., Brubaker, C. O., Liu, Zi-Kui, and Li, Qiang

Subjects
Condensed Matter - Materials Science, Condensed Matter - Superconductivity
Abstract

We have studied the structural and superconducting properties of MgB$_2$ thin films made by pulsed laser deposition followed by in situ annealing. The cross-sectional transmission electron microscopy reveals a nanocrystalline mixture of textured MgO and MgB$_2$ with very small grain sizes. A zero-resistance transition temperature ($T_{c0}$) of 34 K and a zero-field critical current density ($J_c$) of $1.3 \times 10^6$ A/cm$^2$ were obtained. The irreversibility field was $\sim$ 8 T at low temperatures, although severe pinning instability was observed. These bulk-like superconducting properties show that the in situ deposition process can be a viable candidate for MgB$_2$ Josephson junction technologies.

Published
2001
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8. Giant Piezoelectricity on Si for Hyperactive MEMS

Author

Baek, S. H., Park, J., Kim, D. M., Aksyuk, V. A., Das, R. R., Bu, S. D., Felker, D. A., Lettieri, J., Vaithyanathan, V., Bharadwaja, S. S. N., Bassiri-Gharb, N., Chen, Y. B., Sun, H. P., Folkman, C. M., Jang, H. W., Kreft, D. J., Streiffer, S. K., Ramesh, R., Pan, X. Q., Trolier-McKinstry, S., Schlom, D. G., Rzchowski, M. S., Blick, R. H., and Eom, C. B.

Published
2011

22. c-axis oriented epitaxial BaTiO3 films on (001) Si.

Author

Vaithyanathan, V., Lettieri, J., Tian, W., Sharan, A., Vasudevarao, A., Li, Y. L., Kochhar, A., Ma, H., Levy, J., Zschack, P., Woicik, J. C., Chen, L. Q., Gopalan, V., and Schlom, D. G.

Subjects
*EPITAXY, *MOLECULAR beams, *THERMAL expansion, *SILICON research, *FERROELECTRIC thin films, *OPTICAL diffraction
Abstract

c-axis oriented epitaxial films of the ferroelectric BaTiO3 have been grown on (001) Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is (001) BaTiO3∥(001) Si and [100] BaTiO3∥[110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO3 and silicon is overcome by introducing a relaxed buffer layer of BaxSr1-xTiO3 between the BaTiO3 film and silicon substrate. The rocking curve widths of the BaTiO3 films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO3 film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of ∼100 nm, corroborating the orientation of the ferroelectric film. [ABSTRACT FROM AUTHOR]

Published
2006
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23. Interface structure and thermal stability of epitaxial SrTiO3 thin films on Si (001).

Author

Goncharova, L. V., Starodub, D. G., Garfunkel, E., Gustafsson, T., Vaithyanathan, V., Lettieri, J., and Schlom, D. G.

Subjects
EPITAXY, CRYSTAL growth, CRYSTALLIZATION, THIN films, SOLID state electronics, SURFACES (Technology), ATOMIC force microscopy
Abstract

We have used medium energy ion scattering, temperature programmed desorption, and atomic force microscopy to study the interface composition and thermal stability of epitaxial strontium titanate thin films grown by molecular-beam epitaxy on Si (001). The composition of the interface between the film and the substrate was found to be very sensitive to the recrystallization temperature used during growth, varying from a strontium silicate phase when the recrystallization temperature is low to a Ti-rich phase for a higher recrystallization temperature. The films are stable towards annealing in vacuum up to ∼550 °C, where SrO desorption begins and the initially flat film starts to roughen. Significant film disintegration occurs at 850 °C, and is accompanied by SiO and SrO desorption, pinhole formation, and finally titanium diffusion into the silicon bulk. [ABSTRACT FROM AUTHOR]

Published
2006
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25. C-axis oriented epitaxial BaTi[O.sub.3] films on (001) Si

Author

Lettieri, J., Vaithyanathan, V.; Li, Y. L.; Kochhar, A.; Ma, H.; Levy, J.; Zschack, P., Woicik, J.C.; L.Q. Chen; Gopalan, V.; Schlom, D.G., W. Tian, and Vasudevarao, A.

Subjects
Barium compounds -- Electric properties, Barium compounds -- Structure, Titanium compounds -- Electric properties, Titanium compounds -- Structure, Silicon compounds -- Electric properties, Silicon compounds -- Structure, Physics
Abstract

C-axis oriented epitaxial BaTi[O.sub.3] was grown in (001) Si using a relaxed [Ba.sub.x][Sr.sub.(1-x)]Ti[O.sub.3] buffer layer. Characterization of their properties reveals that such structure is an important enabler for devices on silicon requiring a ferroelectric layer with an out-of-plane spontaneous polarization.

Published
2006

26. Interface structure and thermal stability of epitaxial SrTi[O.sub.3] thin films on Si (001)

Author

Goncharova, L.V., Starodub, D.G., Garfunkel, E., Gustafsson, T., Vaithyanathan, V., Lettieri, J., and Schlom, D.G.

Subjects
Atomic force microscopy -- Observations, Epitaxy -- Research, Thin films, Multilayered -- Properties, Thin films, Multilayered -- Thermal properties, Physics
Abstract

The interface composition and thermal stability in epitaxial strontium titanate thin films grown by molecular-beam epitaxy on Si (001) are studied by using medium energy ion scattering, temperature programmed desorption and atomic force microscopy. The structural integrity of the SrTi[O.sub.3] film can be maintained or improved over a wide range of conditions.

Published
2006

36. Si-compatible candidates for high-κdielectrics with thePbnmperovskite structure

Author

Coh, Sinisa, primary, Heeg, Tassilo, additional, Haeni, J. H., additional, Biegalski, M. D., additional, Lettieri, J., additional, Edge, L. F., additional, O’Brien, K. E., additional, Bernhagen, M., additional, Reiche, P., additional, Uecker, R., additional, Trolier-McKinstry, S., additional, Schlom, Darrell G., additional, and Vanderbilt, David, additional

Published
2010
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39. c -axis oriented epitaxial BaTiO3 films on (001) Si

Author

Vaithyanathan, V., primary, Lettieri, J., additional, Tian, W., additional, Sharan, A., additional, Vasudevarao, A., additional, Li, Y. L., additional, Kochhar, A., additional, Ma, H., additional, Levy, J., additional, Zschack, P., additional, Woicik, J. C., additional, Chen, L. Q., additional, Gopalan, V., additional, and Schlom, D. G., additional

Published
2006
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42. Progress in the deposition of MgB2thin films

Author

Xi, X X, primary, Pogrebnyakov, A V, additional, Zeng, X H, additional, Redwing, J M, additional, Xu, S Y, additional, Li, Qi, additional, Liu, Zi-Kui, additional, Lettieri, J, additional, Vaithyanathan, V, additional, Schlom, D G, additional, Christen, H M, additional, Zhai, H Y, additional, and Goyal, A, additional

Published
2004
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46. Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical–chemical vapor deposition

Author

Zeng, X. H., primary, Pogrebnyakov, A. V., additional, Zhu, M. H., additional, Jones, J. E., additional, Xi, X. X., additional, Xu, S. Y., additional, Wertz, E., additional, Li, Qi, additional, Redwing, J. M., additional, Lettieri, J., additional, Vaithyanathan, V., additional, Schlom, D. G., additional, Liu, Zi-Kui, additional, Trithaveesak, O., additional, and Schubert, J., additional

Published
2003
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48. Synthesis and properties of c-axis oriented epitaxial MgB2 thin films

Author

Bu, S. D., primary, Kim, D. M., additional, Choi, J. H., additional, Giencke, J., additional, Hellstrom, E. E., additional, Larbalestier, D. C., additional, Patnaik, S., additional, Cooley, L., additional, Eom, C. B., additional, Lettieri, J., additional, Schlom, D. G., additional, Tian, W., additional, and Pan, X. Q., additional

Published
2002
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