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Electrocatalytic nitrogen reduction reaction (NRR) has attracted much attention as a sustainable ammonia production technology, but it needs further exploration due to its slow kinetics and the existence of competitive side reactions. In this research, xAu/MIL‐101(Fe) catalysts were obtained by loading gold nanoparticles (Au NPs) onto MIL‐101(Fe) using a one‐step reduction strategy. Herein, MIL‐101(Fe), with high specific surface area and strong N2 adsorption capacity, is used as a support to disperse Au NPs to increase the electrochemical active surface area. Au NPs, with a high NRR activity, is introduced as the active site to promote charge transfer and intermediate formation rates. More importantly, the strong interaction between Au NPs and MIL‐101(Fe) enhances the electron transfer between Au NPs and MIL‐101(Fe), thereby enhancing the activation of N2 and achieving efficient NRR. Among the prepared catalysts, 15 %Au/MIL‐101(Fe) has the highest NH3 yield of 46.37 μg h−1 mg−1cat and a Faraday efficiency of 39.38 % at −0.4 V (vs. RHE). In‐situ FTIR reveals that the NRR mechanism of 15 %Au/MIL‐101(Fe) follows the binding alternating pathway and also indicates that the interaction between Au NPs and MIL‐101(Fe) strengthens the activation of the N≡N bond in the rate‐limiting process, thereby accelerating the NRR process. [ABSTRACT FROM AUTHOR]

An effective approach to manipulate terahertz (THz) waves involves the utilization of a device structure. In this particular investigation, we have successfully fabricated a SnS2 nanofilm device using femtosecond laser direct ablation. The passive and active polarization‐sensitive characteristics of the SnS2 nanofilm device were examined within the THz frequency range, employing different line spaces of 500, 600, and 700 μm. The combination of the device effect and SnS2 absorption led to an enhanced passive polarization modulation. Moreover, when an external electric field was applied to the SnS2 nanofilm device along the device line, persistent switching and linear modulation of THz wave transmission were observed. These findings indicate that the integration of material properties and device structure in this SnS2 device renders it highly suitable for applications in ultrafast THz switches, filters, and modulation devices. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) mono-elemental materials (Xenes) show remarkable potential in the fields of fundamental science and technology, have been regarded as a wide range of building blocks for electronic technologies due to their unique chemical, physical, electrical, and optical properties. Here, 2D tellurene/black phosphorus (Te/BP) heterojunctions are successfully fabricated through liquid-phase exfoliation (LPE) method. Their nonlinear optical absorption properties at 1.0, 2.0, and 2.8 μm have been studied by an open-aperture Z-scan method. The results revealed the excellent broadband saturable absorption responses of the prepared BP/Te heterojunctions, which are further confirmed by using them as saturable absorbers (SAs) for passively Q-switched all-solid-state lasers operating at 1.0, 2.0, and 2.8 μm, respectively. In particular, 1.04 μm continuous-wave (CW) mode-locked lasers with a pulse width of 404 fs is realized for the first time, to our best knowledge. Our work indicates that 2D Xenes especially 2D Xenes based heterojunctions have great potential in the fields of pulsed laser generation/modulation and other optoelectronic and photonic devices.