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Layer number-dependent band structures and symmetry are vital for the electrical and optical characteristics of two-dimensional (2D) transition metal dichalcogenides (TMDCs). Harvesting 2D TMDCs with tunable thickness and properties can be achieved through top-down etching and bottom-up growth strategies. In this study, we report a pioneering technique that utilizes the migration of in-situ generated Na-W-S-O droplets to etch out one-dimensional (1D) nanotrenches in few-layer WS$_2$. 1D WS$_2$ nanotrenches were successfully fabricated on the optically inert bilayer WS$_2$, showing pronounced photoluminescence and second harmonic generation signals. Additionally, we demonstrate the modulation of inkjet-printed Na$_2$WO$_4$-Na$_2$SO$_4$ particles to switch between the etching and growth modes by manipulating the sulfur supply. This versatile approach enables the creation of 1D nanochannels on 2D TMDCs. Our research presents exciting prospects for the top-down and bottom-up fabrication of 1D-2D mixed-dimensional TMDC nanostructures, expanding their use for photonic and optoelectronic applications., Comment: 37 pages, 16 figures

In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS$_2$ (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Peng Wu's hypothesis is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier density is assumed be constant. Wu's model is therefore oversimplified for disordered systems and neglects carrier-density dependent scattering physics. Thus, it is fundamentally incompatible with our rippled-MoS$_2$, and leads to the wrong conclusion.

Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, we probe various relevant electronic states in monolayer MoS2, such as multiple excitonic Rydberg states and free-particle energy bands, with a high relative contrast of up to >200 via broadband (from ~1.79 to 3.10 eV) static third-harmonic spectroscopy, which is further supported by theoretical calculations. Moreover, we introduce transient third-harmonic spectroscopy to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ~94% at ~2.18 eV, providing direct evidence of dominant carrier relaxation processes, associated with carrier-exciton and carrier-phonon interactions. Our results indicate that static and transient third-harmonic spectroscopies are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging., Comment: 17 pages, 4 figures

The usage of molten salts, e.g., Na2MoO4 and Na2WO4, has shown great success in the growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). In comparison with the halide salt (i.e., NaCl, NaBr, KI)-assisted growth (Salt 1.0), the molten salt-assisted vapor-liquid-solid (VLS) growth technique (Salt 2.0) has improved the reproducibility, efficiency and scalability of synthesizing 2D TMDCs. However, the growth of large-area MoSe2 and WTe2 is still quite challenging with the use Salt 2.0 technique. In this study, a renewed Salt 2.0 technique using mixed salts (e.g., Na2MoO4-Na2SeO3 and Na2WO4-Na2TeO3) is developed for the enhanced CVD growth of 2D MoSe2 and WTe2 crystals with large grain size and yield. Continuous monolayer MoSe2 film with grain size of 100-250 {\mu}m or isolated flakes up to ~ 450 {\mu}m is grown on a halved 2-inch SiO2/Si wafer. Our study further confirms the synergistic effect of Na+ and SeO32- in the enhanced CVD growth of wafer-scale monolayer MoSe2 film. And thus, the addition of Na2SeO3 and Na2TeO3 into the transition metal salts could be a general strategy for the enhanced CVD growth of many other 2D selenides and tellurides., Comment: 35 pages, 11 figures and 1 table

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Here, a novel chemical vapor deposition using mixed molten salts is established for vapor-liquid-solid growth of high-quality rhenium (Re) and vanadium (V)-doped TMDC monolayers with high controllability and reproducibility. A tunable semiconductor to metal transition is observed in the Re and V-doped TMDCs. Electrical conductivity increases up to a factor of 108 in the degenerate V-doped WS2 and WSe2. Using V-doped WSe2 as vdW contact, the on-state current and on/off ratio of WSe2-based field-effect transistors have been substantially improved (from ~10-8 to 10-5 A; ~104 to 108), compared to metal contacts. Future studies on lateral contacts and interconnects using doped TMDCs will pave the way for 2D integrated circuits and flexible electronics., Comment: 29 pages, 12 figures

Two-dimensional (2D) materials family with its many members and different properties has recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D materials can be constructed into heterostructures or homostructures in the fashion of out-of-plane perpendicular stacking or in-plane lateral stitching, resulting in unexpected physical and chemical properties and applications in many areas. In particular, 2D metal-semiconductor heterostructures or homostructures (MSHSs) which integrate 2D metals and 2D semiconductors, have shown great promise in future integrated electronics and energy-related applications. In this review, MSHSs with different structures and dimensionalities are first introduced, followed by several ways to prepare them. Their applications in electronics and optoelectronics, energy storage and conversion, and their use as platforms to exploit new physics are then discussed. Finally, we give our perspectives about the challenges and future research directions in this emerging field., Comment: 52 pages, 8 figures

The electronic and optical properties of transition metal dichalcogenides (TMDCs) in distinctive phases, such as 1H, 1T, and 1T' phases, are of fundamental importance for variety of applications. The 1H phase has been understood as a direct bandgap semiconductor. On the other hand, the electronic properties of the 1T and 1T' phases remain controversy in the theoretical and experimental perspectives. In this study, we explore the optical properties of monolayer WS2 in 1H, 1T, and 1T' phases using Raman and photoluminescence, corroborated with the atomic structure identified by scanning transmission electron microscopy. Despite of earlier theoretical investigations which all predict the metallic 1T phase, we experimentally discovered that the 1T-phase WS2 is a direct band gap semiconductor and optically indistinguishable from the 1H phase. In a sharp contrast, the 1T'-phase WS2 shows a gapless nature in its bandstructure with the quenched exciton transition as expected. Our experimental findings may give an interesting twist on the existing literatures reporting the metallic nature of 1T phase because the 1T phase has a strong tendency to co-exist with the metallic 1T' phase.

Vapor transportation is the core process in growing transition-metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). One inevitable problem is the spatial inhomogeneity of the vapors. The non-stoichiometric supply of transition-metal precursors and chalcogen leads to poor control in products' location, morphology, crystallinity, uniformity and batch to batch reproducibility. While vapor-liquid-solid (VLS) growth involves molten precursors at the growth temperatures higher than their melting points. The liquid sodium molybdate can precipitate solid MoS2 monolayers when saturated with sulfur vapor. Taking advantage of the VLS growth, we achieved three kinds of important achievements: (a) 4-inch-wafer-scale uniform growth of MoS2 flakes on SiO2/Si substrates, (b) 2-inch-wafer-scale growth of continuous MoS2 film with a grain size exceeding 100 um on sapphire substrates, and (c) pattern (site-controlled) growth of MoS2 flakes and film. We clarified that the VLS growth thus pave the new way for the high-efficient, scalable synthesis of two-dimensional TMDC monolayers., Comment: 30 pages, 10 figures

Chemical vapor deposition (CVD) of two-dimensional (2D) materials such as monolayer MoS2 typically involves the conversion of vapor-phase precursors to a solid product in a process that may be described as a vapor-solid-solid (VSS) mode. Here, we report the first demonstration of vapor-liquid-solid (VLS) growth of monolayer MoS2 yielding highly crystalline ribbon-shaped structures with a width of a few tens of nanometers to a few micrometers. The VLS growth mode is triggered by the reaction between molybdenum oxide and sodium chloride, which results in the formation of molten Na-Mo-O droplets. These droplets mediate the growth of MoS2 ribbons in the "crawling mode" when saturated with sulfur on a crystalline substrate. Our growth yields straight and kinked ribbons with a locally well-defined orientation, reflecting the regular horizontal motion of the liquid droplets during growth. Using atomic-resolution scanning transmission electron microscopy (STEM) and second harmonic generation (SHG) microscopy, we show that the ribbons are homoepitaxially on monolayer MoS2 surface with predominantly 2H- or 3R-type stacking. These findings pave the way to novel devices with structures of mixed dimensionalities., Comment: 40 pages, 19 figures

Topological phases of matter exhibit phase transitions between distinct topological classes. These phase transitions are exotic in that they do not fall within the traditional Ginzburg-Landau paradigm but are instead associated with changes in bulk topological invariants and associated topological surface states. In the case of a Weyl semimetal this phase transition is particularly unusual because it involves the creation of bulk chiral charges and the nucleation of topological Fermi arcs. Here we image a topological phase transition to a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$ with changing composition $x$. Using pump-probe ultrafast angle-resolved photoemission spectroscopy (pump-probe ARPES), we directly observe the nucleation of a topological Fermi arc at $x_c \sim 7\%$, showing the critical point of a topological Weyl phase transition. For Mo dopings $x < x_c$, we observe no Fermi arc, while for $x > x_c$, the Fermi arc gradually extends as the bulk Weyl points separate. Our results demonstrate for the first time the creation of magnetic monopoles in momentum space. Our work opens the way to manipulating chiral charge and topological Fermi arcs in Weyl semimetals for transport experiments and device applications.