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Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This paper compares SRO in GeSn thin films of similar compositions grown by molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) using atom probe tomography. An $\sim$15% stronger preference for Sn-Sn 1$^{st}$ nearest neighbor (1NN) is observed in MBE GeSn than CVD GeSn for both thin film and quantum well samples with Sn composition ranging from 7 to 20%. Interestingly, samples grown by different deposition tools under the same method (either MBE or CVD) showed remarkable consistency in Sn-Sn 1NN SRO, while MBE vs. CVD showed clear differences. Supported by theoretical modeling, we consider that this difference in SRO originates from the impact of surface termination, where MBE surfaces are exposed to ultrahigh vacuum while CVD surfaces are terminated by H to a good extent. This finding not only suggests engineering surface termination or surfactants during the growth as a potential approach to control SRO in GeSn, but also provides insight into the underlying reasons for very different growth temperature between MBE and CVD that directly impact the strain relaxation behavior.

Magnetic particle imaging (MPI) is an in-vivo imaging method to detect magnetic nanoparticles for blood vessel imaging and molecular target imaging. Compared with conventional molecular imaging devices (such as nuclear medicine imaging PET and SPECT), magnetic nanoparticles have longer storage periods than radionuclides without ionizing radiation. MPI has higher detection sensitivity compared with MRI. To accurately locate molecular probes in living organisms, high-resolution images are needed to meet the requirements of precision medicine. The spatial resolution of the latest domestic and international MPI equipment is 1-6 mm and has not yet met the requirements of medical imaging detection. We previously studied the spatial encoding technology based on pulsed square wave stimulation, which significantly improved the image resolution along the field free line (FFL) direction. This study proposes an innovative idea of high-resolution MPI based on stimulated emission depletion (STED) of magnetic nanoparticle signals. The stimulated emission was implemented by using cosine stimulation on FFL-based MPI scanner systems. The STED signal was generated by adding an offset magnetic field parallel to the FFL, which may form a donut-shaped focal spot or a regular Gaussian focal spot depending on the offset field strength. Focal spot modulation techniques and deconvolution algorithms were developed to improve image resolution., Comment: 29 pages, 24 figures, 2 tables

The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they are deposited using far from the equilibrium processes, as is the case of epitaxial Ge1-xSnx layers. In this work, we investigate the arrangement of Ge and Sn atoms in optoelectronic grade Ge1-xSnx epitaxial layers featuring a Sn content in the 5-14% range by using polarization-dependent Raman spectroscopy and density-functional-theory calculations. The thorough analysis of the polarization-dependent spectra in parallel and perpendicular configuration allowed us to properly tag all the observed vibrational modes, and to shed light on that associated to disorder-assisted Raman transitions. Indeed, with the help of large-scale atomistic simulations, we were able to highlight how the presence of Sn atoms, that modify the local environments of Ge atoms, gives rise to two spectral features at different Raman shifts, corresponding to distortions of the atomic bonds. This analysis provides a valuable framework for advancing the understanding of the vibrational properties in Ge1-xSnx alloys, particularly with regard to the impact of local ordering of the different atomic species., Comment: 20 pages, 10 figures, Accepted Manuscript of a Published Paper in Physical Review

Chalcogenides, which refer to chalcogen anions, have attracted considerable attention in multiple fields of applications, such as optoelectronics, thermoelectrics, transparent contacts, and thin film transistors. In comparison to oxide counterparts, chalcogenides have demonstrated higher mobility and \textit{p}-type dopability, owing to larger orbital overlaps between metal-X covalent chemical bondings and higher-energy valence bands derived by p-orbitals. Despite the potential of chalcogenides, the number of successfully synthesized compounds remains relatively low compared to oxides, suggesting the presence of numerous unexplored chalcogenides with fascinating physical characteristics. In this study, we implemented a systematic high-throughput screening process combined with first-principles calculations on ternary chalcogenides using 34 crystal structure prototypes. We generated a computational material database containing over 400,000 compounds by exploiting the ion-substitution approach at different atomic sites with elements in the periodic table. The thermodynamic stabilities of the candidates were validated using the chalcogenides included in the Open Quantum Materials Database. Moreover, we trained a model based on Crystal Graph Convolutional Neural Networks to predict the thermodynamic stability of novel materials. Furthermore, we theoretically evaluated the electronic structures of the stable candidates using accurate hybrid functionals. A series of in-depth characteristics, including the carrier effective masses, electronic configuration, and photovoltaic conversion efficiency, was also investigated. Our work provides useful guidance for further experimental research in the synthesis and characterization of such chalcogenides as promising candidates, as well as charting the stability and optoelectronic performance of ternary chalcogenides.

Layered transition metal hydroxides (LTMHs) with transition metal centers sandwiched between layers of coordinating hydroxide anions have attracted considerable interest for their potential in developing clean energy sources and storage technologies. However, two dimensional (2D) LTMHs remain largely unstudied in terms of their physical properties and the applications in electronic devices. Here, directed by the relationship of the spin state of 3d transition metal (TM) ions such as Ni, Co, Cu, and the corresponding geometry of the crystal field, we discover that Ni2+ with perfect Oh symmetry is ideal for intraplanar growth, leading to the achievement of >20 {\mu}m {\alpha}-Ni(OH)2 2D crystals with high yield, which are the largest 2D domains reported so far. We also report the successful synthesis of 2D Co(OH)2 crystals (>40 {\mu}m) with less yield due to the slight geometry distortion resulted from uneven number of electrons. Moreover, the detailed structural characterization of synthesized {\alpha}-Ni(OH)2 are performed; the optical band gap energy is extrapolated as 2.54 eV from optical absorption measurements and is measured as 2.50 eV from reflected electrons energy loss spectroscopy (REELS), suggesting the potential as insulating 2D dielectric material for electronic devices. Furthermore, key parameters of the hydrothermal reaction including soaking temperature, starting pH and cooling rate, are systematically tuned to understand their effects on morphological and crystallographic perspectives, allowing the establishment of a 2D growth mechanism. This work demonstrates a scalable pathway to synthesize large 2D LTMHs from simple methods, paving the way for the study of fundamental physical properties and device applications of 2D LTMHs., Comment: 30 pages, 5 figures

This paper considers an active reconfigurable intelligent surface (RIS)-aided communication system, where an M-antenna base station (BS) transmits data symbols to a single-antenna user via an N-element active RIS. We use two-timescale channel state information (CSI) in our system, so that the channel estimation overhead and feedback overhead can be decreased dramatically. A closed-form approximate expression of the achievable rate (AR) is derived and the phase shift at the active RIS is optimized. In addition, we compare the performance of the active RIS system with that of the passive RIS system. The conclusion shows that the active RIS system achieves a lager AR than the passive RIS system.

Recognition of structure prototypes from tremendous known inorganic crystal structures has been an important subject beneficial for material science research and new materials design. The existing databases of inorganic crystal structure prototypes were mostly constructed by classifying materials in terms of the crystallographic space group information. Herein, we employed a distinct strategy to construct the inorganic crystal structure prototype database, relying on the classification of materials in terms of local atomic environments (LAE) accompanied by unsupervised machine learning method. Specifically, we adopted a hierarchical clustering approach onto all experimentally known inorganic crystal structures data to identify structure prototypes. The criterion for hierarchical clustering is the LAE represented by the state-of-the-art structure fingerprints of the improved bond-orientational order parameters and the smooth overlap of atomic positions. This allows us to build up a LAE-based Inorganic Crystal Structure Prototype Database (LAE-ICSPD) containing 15,613 structure prototypes with defined stoichiometries. In addition, we have developed a Structure Prototype Generator Infrastructure (SPGI) package, which is a useful toolkit for structure prototype generation. Our developed SPGI toolkit and LAE-ICSPD are beneficial for investigating inorganic materials in a global way as well as accelerating materials discovery process in the data-driven mode., Comment: 27 pages, 4 figures, with Supporting Information

Short-range chemical order (SRO) has been recently demonstrated to play a decisive role in modulating a wide range of physical properties in medium-entropy alloy (MEA) and high-entropy alloy (HEA). The enormous configurational space of these alloys implies multiple forms of SRO are likely to develop concurrently but such structural diversity has not been reported. Here we show, through extensive {\em ab initio}-based sampling study, that SiGeSn medium-entropy alloys spontaneously develop two distinct forms of SRO. Remarkably, the two types of SROs, which carry different energies, distinct degrees of local ordering, and dissimilar electronic structures, are found to co-exist in a wide range of compositions of SiGeSn alloys. The co-existence of two SROs is rationalized through their virtual degeneracy of thermodynamic stability, due to the subtle balance in the change of enthalpy and configurational entropy upon the transformation between the two SROs. Such co-existence of SROs thus suggests an inherent structural heterogeneity, a diffuse electronic structure, and a new route for band engineering in SiGeSn MEA. More generally, our finding indicates the possible ubiquity of the co-existence of multiple forms of SRO in a broad range of MEAs and HEAs, which has profound implications on their diverse physical properties.

In this letter, we investigate a reconfigurable intelligent surfaces (RIS)-aided device to device (D2D) communication system over Rician fading channels with imperfect hardware including both hardware impairment at the transceivers and phase noise at the RISs. This paper has optimized the phase shift by a genetic algorithm (GA) method to maximize the achievable rate for the continuous phase shifts (CPSs) and discrete phase shifts (DPSs). We also consider the two special cases of no RIS hardware impairments (N-RIS-HWIs) and no transceiver hardware impairments (N-T-HWIs). We present closed-form expressions for the achievable rate of different cases and study the impact of hardware impairments on the communication quality. Finally, simulation results validate the analytic work., Comment: Accepted by IEEE Communications Letters. Keywords: Reconfigurable intelligent surface (RIS), intelligent reflecting surface (IRS)

Many developing countries use employment guarantee programs to combat poverty. This paper examines the consequences of such employment guarantee programs for the human capital accumulation of children. It exploits the phased roll-out of India's flagship Mahatma Gandhi National Rural Employment Guarantee Scheme (MGNREGA) to study the effects on enrollment in schools and child labor. Introduction of MGNREGA results in lower relative school enrollment in treated districts. The authors find that the drop in enrollment is driven by primary school children. Children in higher grades are just as likely to attend school under MGNREGA, but their school performance deteriorates. Using nationally representative employment data, they find evidence indicating an increase in child labor highlighting the unintentional perverse effects of the employment guarantee schemes for Human capital.

Materials informatics has emerged as a promisingly new paradigm for accelerating materials discovery and design. It exploits the intelligent power of machine learning methods in massive materials data from experiments or simulations to seek for new materials, functionality, principles, etc. Developing specialized facility to generate, collect, manage, learn and mine large-scale materials data is crucial to materials informatics. We herein developed an artificial-intelligence-aided data-driven infrastructure named Jilin Artificial-intelligence aided Materials-design Integrated Package (JAMIP), which is an open-source Python framework to meet the research requirements of computational materials informatics. It is integrated by materials production factory, high-throughput first-principles calculations engine, automatic tasks submission and monitoring progress, data extraction, management and storage system, and artificial intelligence machine learning based data mining functions. We have integrated specific features such as inorganic crystal structure prototype database to facilitate high-throughput calculations and essential modules associated with machine learning studies of functional materials. We demonstrated how our developed code is useful in exploring materials informatics of optoelectronic semiconductors by taking halide perovskites as typical case. By obeying the principles of automation, extensibility, reliability and intelligence, the JAMIP code is a promisingly powerful tool contributing to the fast-growing field of computational materials informatics., Comment: 11 pages, 7 figures, preliminary version

Group IV alloys have been long viewed as homogeneous random solid solutions since they were first perceived as Si-compatible, direct-band-gap semiconductors 30 years ago. Such a perception underlies the understanding, interpretation and prediction of alloys' properties. However, as the race to create scalable and tunable device materials enters a composition domain far beyond alloys' equilibrium solubility, a fundamental question emerges as to how random these alloys truly are. Here we show, by combining statistical sampling and large-scale ab initio calculations, that GeSn alloy, a promising group IV alloy for mid-infrared technology, exhibits a clear, short-range order for solute atoms within its entire composition range. Such short-range order is further found to substantially affect the electronic properties of GeSn. We demonstrate the proper inclusion of this short-range order through canonical sampling can lead to a significant improvement over previous predictions on alloy's band gaps, by showing an excellent agreement with experiments within the entire studied composition range. Our finding thus not only calls for an important revision of current structural model for group IV alloy, but also suggests short-range order may generically exist in different types of alloys., Comment: 26 pages, 6 figures

In this paper, we investigate a reconfigurable intelligent surface (RIS) aided multi-pair communication system, in which multi-pair users exchange information via an RIS. We derive an approximate expression of the achievable rate by assuming that statistical channel state information (CSI) is available. A genetic algorithm (GA) to solve the rate maximization problem is proposed as well. In particular, we consider implementations of RISs with continuous phase shifts (CPSs) and discrete phase shifts (DPSs). Simulation results verify the correctness of the obtained results and show that the proposed GA method has almost the same performance as the globally optimal solution. In addition, numerical results show that three quantization bits can achieve a large portion of the sum achievable rate for the CPSs setup., Comment: Accepted by IEEE Transactions on Vehicular Technology. Keywords: Reconfigurable intelligent surface (RIS), intelligent reflecting surface (IRS), statistical channel state information (CSI)

Antiferromagnets display enormous potential in spintronics owing to its intrinsic nature, including terahertz resonance, multilevel states, and absence of stray fields. Combining with the layered nature, van der Waals (vdW) antiferromagnets hold the promise in providing new insights and new designs in two-dimensional (2D) spintronics. The zero net magnetic moments of vdW antiferromagnets strengthens the spin stability, however, impedes the correlation between spin and other excitation elements, like excitons. Such coupling is urgently anticipated for fundamental magneto-optical studies and potential opto-spintronic devices. Here, we report an ultra-sharp excitonic emission with excellent monochromaticity in antiferromagnetic nickel phosphorus trisulfides (NiPS3) from bulk to atomically thin flakes. We prove that the linear polarization of the excitonic luminescence is perpendicular to the ordered spin orientation in NiPS3. By applying an in-plane magnetic field to alter the spin orientation, we further manipulate the excitonic emission polarization. Such strong correlation between exciton and spins provides new insights for the study of magneto-optics in 2D materials, and hence opens a path for developing opto-spintronic devices and antiferromagnet-based quantum information technologies.

The two-dimensional (2D) semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility and wide tunability of its band gap energy achieved by varying the layer thickness. All these features make 2D InSe a potential candidate for advanced electronic and optoelectronic applications. Here, we report on the discovery of new polymorphs of InSe with enhanced electronic properties. Using a global structure search that combines artificial swarm intelligence with first-principles energetic calculations, we identify polymorphs that consist of a centrosymmetric monolayer belonging to the point group D$_{3d}$, distinct from the well-known polymorphs based on the D$_{3h}$ monolayers that lack inversion symmetry. The new polymorphs are thermodynamically and kinetically stable, and exhibit a wider optical spectral response and larger electron mobilities compared to the known polymorphs. We discuss opportunities to synthesize these newly discovered polymorphs and viable routes to identify them by X-ray diffraction, Raman spectroscopy and second harmonic generation experiments., Comment: 20 pages, 5 figures

Two-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are potentially promising for applications in electronic and optoelectronic devices; however, the synthesis of such TMNs has not yet been achieved. Here, we report the synthesis of few-nanometer thin Mo5N6 crystals with large area and high quality via in situ chemical conversion of layered MoS2 crystals. The structure and quality of the ultrathin Mo5N6 crystal are confirmed using transmission electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. The large lateral dimensions of Mo5N6 crystals are inherited from the MoS2 crystals that are used for the conversion. Atomic force microscopy characterization reveals the thickness of Mo5N6 crystals is reduced to about 1/3 of the MoS2 crystal. Electrical measurements show the obtained Mo5N6 samples are metallic with high electrical conductivity (~ 100 {\Omega} sq-1), which is comparable to graphene. The versatility of this general approach is demonstrated by expanding the method to synthesize W5N6 and TiN. Our strategy offers a new direction for preparing 2D TMNs with desirable characteristics, opening a door for studying fundamental physics and facilitating the development of next generation electronics., Comment: 41 pages, 6 Figures, Accepted by Science Advances