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21 results on '"Li, Tongkuai"'

5. Kelvin‐Helmholtz Waves and Magnetic Reconnection at the Earth's Magnetopause Under Southward Interplanetary Magnetic Field

Author

Li, Tongkuai, primary, Li, Wenya, additional, Tang, Binbin, additional, Khotyaintsev, Yuri. V., additional, Graham, Daniel Bruce, additional, Ardakani, Akhtar, additional, Burch, J. L., additional, Gershman, D. J., additional, Lavraud, B., additional, Russell, C. T., additional, Lu, Quanming, additional, Guo, Xiaocheng, additional, and Wang, Chi, additional

Published
2023
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7. Kelvin-Helmholtz Waves and Magnetic Reconnection at the Earth's Magnetopause Under Southward Interplanetary Magnetic Field

Author

Li, Tongkuai, Li, Wenya, Tang, Binbin, Khotyaintsev, Yuri V., Graham, Daniel Bruce, Ardakani, Akhtar, Burch, J. L., Gershman, D. J., Lavraud, B., Russell, C. T., Lu, Quanming, Guo, Xiaocheng, Wang, Chi, Li, Tongkuai, Li, Wenya, Tang, Binbin, Khotyaintsev, Yuri V., Graham, Daniel Bruce, Ardakani, Akhtar, Burch, J. L., Gershman, D. J., Lavraud, B., Russell, C. T., Lu, Quanming, Guo, Xiaocheng, and Wang, Chi

Abstract

We present Magnetospheric Multiscale (MMS) observations of a K-H wave event under southward IMF conditions, accompanied by ongoing magnetic reconnection. The nonlinear K-H waves are characterized by quasi-periodic fluctuations, the presence of low-density and high-speed ions, and variations in the boundary normal vectors at both the leading and trailing edges. Our observations reveal clear evidence of on-going magnetic reconnection through the identification of Alfvenic ion jets and the escape of energetic magnetospheric electrons. Among the 36 magnetopause current-sheet crossings in this event, 19 exhibit unambiguous signatures of reconnection at both the leading (7) and trailing (12) edges. Notably, the estimated current-sheet thicknesses at both edges are comparable to the ion-inertial scale, confirming the compression effect resulting from the large-scale evolution of the K-H waves. The reconnection jets potentially contribute to the suppression of K-H growth through boundary-layer broadening and the development of complex flow and magnetic field patterns.

Published
2023
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13. Flexible Dual‐Parameter Sensor Array without Coupling Based on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors.

Author

Xue, Xianyang, Zhao, Tingting, Tian, Xueming, Yuan, Li, Wang, Zhigan, Li, Tongkuai, and Zhang, Jianhua

Subjects
INDIUM gallium zinc oxide, THIN film transistors, ZINC oxide thin films, SENSOR arrays, PRESSURE sensors, CARBON nanotubes, SOFT robotics
Abstract

The skin‐like temperature–pressure sensing capabilities are fundamental features for the next‐generation artificial intelligence applications, such as human–machine interactions and soft robotics. The previous studies on sensing devices have focused on single‐point pressure or temperature sensing, whereas detecting the distributions of pressure and temperature simultaneously still remain challenging. In this article, a flexible dual‐parameter sensor array based on amorphous indium gallium zinc oxide (a‐IGZO) thin film transistors (TFTs) is proposed. In the proposed array, the decoupling of pressure and temperature perceptions is realized by optimizing the combination of MXene and carbon nanotubes in the form of hybrid films based on a difference in the temperature coefficient. The amplification of the sensing signal and scale sensor array is achieved by using the a‐IGZO TFT‐based cross‐active matrix addressing design. After being amplified by TFTs, the pressure and temperature sensors exhibit satisfactory sensitivity. Further, a 7 × 4 pressure array and a 6 × 4 temperature array are alternately integrated on a 5 cm × 5 cm area, thus achieving spatial distribution mapping of the pressure and temperature signals simultaneously without interference. The proposed design has a potential application in the field of multifunctional electronic skin. [ABSTRACT FROM AUTHOR]

Published
2022
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21. Enhanced Flexible Piezoelectric Sensor by the Integration of P(VDF-TrFE)/AgNWs Film With a-IGZO TFT.

Author

Zhang, Zhihan, Chen, Longlong, Yang, Xiang, Li, Tongkuai, Chen, Xin, Li, Xifeng, Zhao, Tingting, and Zhang, Jianhua

Subjects
PIEZOELECTRIC detectors, SILVER compounds, METALLIC thin films
Abstract

Flexible pressure sensors are important components in the future rollable touch screens, health care devices, electronic skins, and more. However, large-area array pressure sensors with small-size, good sensitivity, and the ability of detecting high-frequency dynamic force remain the key challenges for their practical applications. In this letter, we proposed a novel flexible piezoelectric pressure sensor system combined with a P(VDF-TrFE)/AgNWs thin film and an a-IGZO TFT. The doping of AgNWs into the P(VDF-TrFE) can improve the piezoelectric performance of P(VDF-TrFE) without high-voltage polarization and pressure stretching process, which are harmful to the performance of the TFT. With the combination of the a-IGZO TFT, this pressure sensor can be arrayed 4 $\times$ 4 in an active-matrix design with a dynamic force detecting ability (a response of 1100 mV/N), exhibiting good flexibility, fast response speed, high amplification, and lower energy consumption. [ABSTRACT FROM AUTHOR]

Published
2019
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